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1. 发明专利

JPS4843278A 失效
公开(公告)号：JPS4843278A
公开(公告)日：1973-06-22
申请号：JP7636071
申请日：1971-10-01
IPC分类号： H01L21/52 , H01L21/60 , H01L23/29 , H01L23/31 , H01L25/07 , H01L1/22

2. 发明授权

US4437926A Metal alloy with high catalytic activity 失效
标题翻译：具有高催化活性的金属合金
公开(公告)号：US4437926A
公开(公告)日：1984-03-20
申请号：US429543
申请日：1982-09-30
申请人： Jean-Louis Barnabe
发明人： Jean-Louis Barnabe
IPC分类号： B01D53/94 , B01J23/89 , C22C38/40 , H01L1/22 , B22D25/00 , B01J21/18 , C25F3/08
CPC分类号： B01D53/945 , B01J23/89 , B01J23/8933 , C22C38/40 , Y02T10/22 , Y10T428/12479 , Y10T428/12847 , Y10T428/12931
摘要： Metal alloy having high catalytic activity. It comprises a refractory base metal mass containing carbon and at least one metal of the platinum type, the surface of which has been subjected to intergranular acid corrosion which produces microfissures and causes the formation of microcrystals of the platinum metals.Application in exhaust catalytic converters.The present invention relates to refractory metallic alloys exhibiting a high catalytic activity which are particularly useful for reducing exhaust gas pollution from automobiles.
摘要翻译：具有高催化活性的金属合金。它包括含有碳和至少一种铂类金属的耐火贱金属块，其表面经过晶间酸腐蚀，产生微裂纹并引起铂金属微晶的形成。在排气催化转化器中的应用。本发明涉及具有高催化活性的难熔金属合金，其特别适用于减少汽车废气污染。

3. 发明授权

US3619731A Multiple pellet semiconductor device 失效
标题翻译：多芯片半导体器件
公开(公告)号：US3619731A
公开(公告)日：1971-11-09
申请号：US3619731D
申请日：1968-10-11
申请人： RCA CORP
发明人： BAKER LAWRENCE K , SHARDLOW LAWRENCE R
IPC分类号： H01L21/52 , H01L25/03 , H01L25/07 , H01L1/08 , H01L1/10 , H01L1/14 , H01L1/22
CPC分类号： H01L25/074 , H01L25/03 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device comprises a substrate, a first semiconductor pellet mounted on the substrate, an insulating material washer mounted on the first pellet, and a second semiconductor pellet mounted on the washer. The second pellet is rigidly secured to the washer and the first pellet, and electrically connected to the first pellet, by means of a solder filling the washer central opening and bonded to both pellets.

4. 发明授权

US3539875A Hardware envelope with semiconductor mounting arrangements 失效
标题翻译：具有半导体安装安排的硬件环境
公开(公告)号：US3539875A
公开(公告)日：1970-11-10
申请号：US3539875D
申请日：1968-09-25
申请人： PHILIPS CORP
发明人： FONG VICTOR , HARRINGTON BRADFORD K
IPC分类号： H01L23/40 , H01L1/22 , H01L1/10 , H01L1/12
CPC分类号： H01L23/4006 , H01L2023/405 , H01L2023/4087 , H01L2224/48091 , H01L2924/00014

5. 发明专利

AT5157U1 未知
公开(公告)号：AT5157U1
公开(公告)日：2002-03-25
申请号：AT1222001
申请日：2001-02-15
申请人： ANDES TELECOM CONSULTING GMBH
IPC分类号： H01Q1/06 , H01Q1/12 , H01Q1/24 , H01Q1/42 , H01Q1/44 , H01L1/22 , F21S6/00 , F21V33/00 , H01L1/12 , H01L1/44

6. 发明专利

NL7406795A 未知
公开(公告)号：NL7406795A
公开(公告)日：1974-11-26
申请号：NL7406795
申请日：1974-05-21
IPC分类号： H01L25/03 , H01L1/22

7. 发明专利

DE1514675B2 未知
公开(公告)号：DE1514675B2
公开(公告)日：1974-02-21
申请号：DE1514675
申请日：1966-01-27
申请人： SEMIKRON GESELLSCHAFT FUER GLEICHRICHTERBAU UND ELEKTRONIK MBH, 8500 NUERNBERG
发明人： SCHIERZ, WINFRIED, 8542 ROTH , FORSTER, HERMANN, 8501 SCHWARZENBRUCK
IPC分类号： H01L23/48 , H01L25/03 , H01L1/22

8. 发明专利

DE2140071A1 未知
公开(公告)号：DE2140071A1
公开(公告)日：1972-02-17
申请号：DE2140071
申请日：1971-08-10
申请人： HITACHI LTD
IPC分类号： H01L23/29 , H01L23/31 , H01L23/58 , H01L25/07 , H02M7/10 , H01L1/22
摘要： A high voltage semiconductor rectifying device comprising a rod-like stack of a plurality of silicon pellets and means to provide additional capacitance to silicon pellets nearer the a-c side electrode.

9. 发明专利

DE1564800A1 未知
公开(公告)号：DE1564800A1
公开(公告)日：1970-03-05
申请号：DES0107676
申请日：1966-12-30
申请人： SIEMENS AG
发明人： ERICH WALDKOETTER DIPL-ING
IPC分类号： H01L21/00 , H01L21/60 , H01L25/07 , H01L27/00 , H01L1/22

10. 发明专利

NL6811015A 未知
公开(公告)号：NL6811015A
公开(公告)日：1969-04-29
申请号：NL6811015
申请日：1968-08-02
IPC分类号： H01L23/473 , H01L25/03 , H01L1/22
摘要： 1,220,148. Rectifier assemblies. SIEMENS A.G. 1 Aug., 1968 [26 Oct., 1967], No. 36865/68. Heading H1K. A rectifier assembly comprises two or more parallel stacks of rectifier elements clamped between yoke members, the elements at one end of each stack being electrically interconnected and electrical lead-in and out conductors being disposed to one side of the stacks and connected thereto by resilient members. Fluid coolant is passed through hollow cooling elements which form part of the stack and are thus pressed into heat conducting contact with respective rectifier elements. In the arrangement shown in which only one stack is fully visible the elements, encapsulated in disc shaped housings are connected to form a 3-phase bridge. The D.C. output conductors P, N and A.C. inputs R, S and T (not visible) include flexible links 39 and the stacks may be suspended from them. Their ends are clamped between hollow cylindrical cooling elements 9, 10, 11 and may form cover-plates therefor. Coolant is supplied to the cooling elements via inlet and outlet manifolds 36, 37 prefabricated from plastics material and the entire assembly sealed in a watertight casing 38 thereby preventing ice accumulation when the system is operated at sub-zero temperatures as when cooling is achieved by evaporation of low boiling point coolants in the hollow elements. The stacks are clamped between yokes 20, 21, one of which electrically connects the end elements of the stacks. Clamping pressure is provided by a central nut and bolt arrangement and is communicated to the stacks via balls disposed between them and the yoke 20. Where, as shown, the rectifier elements are thyristors the controlling pulse repeaters 40 are mounted against the stacks. An arrangement with vertical stacks is also envisaged.

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