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    • 6. 发明申请
    • BI-WAVELENGTH OPTICAL INTENSITY MODULATORS USING MATERIALS WITH SATURABLE ABSORPTIONS
    • 使用可吸收吸收材料的BI波长光学强度调制器
    • WO2006075985A1
    • 2006-07-20
    • PCT/US2005/001222
    • 2005-01-11
    • BRIMROSE CORPORATION OF AMERICAWANG, Chen-ChiaTRIVEDI, Sudhir
    • WANG, Chen-ChiaTRIVEDI, Sudhir
    • G03B27/72G03B27/28G03C5/00
    • G03F7/70958G03F7/70291G03F7/70391
    • Device and method for exposing photoresists on semiconductor wafers without using physical masks while improving significantly the time-and cost-efficiencies for the manufacturing of integrated-circuit chips. Two electromagnetic sources of different wavelengths are used as the light sources, with the one having longer wavelength functioning as the control light beam while the one with an appropriately shorter wavelength is used to eventually expose the photoresists on semiconductor wafers. Images of the desired circuit patterns are fist imposed onto the longer wavelength control light beam using, for example but not limited to, laser diode arrays, light emitting diode arrays, and devices similar to liquid crystal displays. The image-carrying control light beam interacts inside the bi-wavelength saturable absorber with the short-wavelength exposure light beam which carries initially a uniform intensity profile. The bi-wavelength saturable absorber transfers the images carried by the control light beam to the exposure light beam upon its exit from the bi-wavelength saturable absorber. The exposure light beam can then be used to expose photoresists without using any physical masks. The invention eliminates the prohibitively high front end costs associated with the design and production of large physical masks with fine spatial features sought for by the state-of-the-art integrated-circuit manufacturing processes. The invention, when combined with appropriate light sources, also improves the throughput rates for the fabrication of integrated-circuit chips by orders of magnitude, further enhancing the economic impacts.
    • 用于在不使用物理掩模的情况下在半导体晶片上曝光光致抗蚀剂的装置和方法,同时显着地改善用于制造集成电路芯片的时间和成本效率。 使用不同波长的两个电磁源作为光源,其中具有较长波长的电磁源用作控制光束,而具有适当较短波长的光源用于最终暴露半导体晶片上的光致抗蚀剂。 使用例如但不限于激光二极管阵列,发光二极管阵列和类似于液晶显示器的装置将所需电路图案的图像施加在较长波长控制光束上。 图像载体控制光束与双波长可饱和吸收体内部相互作用,其中短波长曝光光束起始具有均匀的强度分布。 双波长可饱和吸收体在从双波长可饱和吸收体排出时将由控制光束承载的图像传送到曝光光束。 然后曝光光束可用于曝光光致抗蚀剂而不使用任何物理掩模。 本发明消除了与由最先进的集成电路制造工艺所寻求的具有精细空间特征的大型物理掩模的设计和生产相关联的极高的前端成本。 本发明与合适的光源组合时,也提高了集成电路芯片制造的吞吐量数量级,进一步增强了经济影响。