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1. 发明授权

US5476811A Method of growing epitaxial layers 失效
标题翻译：生长外延层的方法
公开(公告)号：US5476811A
公开(公告)日：1995-12-19
申请号：US409944
申请日：1995-03-23
申请人： Toshio Fujii , Adarsh Sandhu
发明人： Toshio Fujii , Adarsh Sandhu
IPC分类号： H01L21/20 , H01S5/223 , H01S5/32 , H01S5/323 , C36B23/68
CPC分类号： H01S5/32308 , H01L21/02395 , H01L21/02433 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/0262 , H01L21/02631 , H01S5/2238 , H01S5/3202 , H01S5/3203
摘要： A method of growing a plurality of epitaxial layers each having a property which is different from each other simultaneously on a common substrate comprises steps of forming at least a first crystal surface and a second crystal surface which are crystallographically non-equivalent to each other on the substrate, introducing particles comprising constituent elements of the epitaxial layers into a region in the vicinity of the substrate, the particles including at least metal-organic molecules containing one of the elements constituting the epitaxial layers, decomposing the metal-organic molecules such that the layer constituting element therein is released as a result of the decomposition, and depositing the aforesaid particles including the element released by the decomposition of the metal-organic molecules on the first and second crystal surfaces so that a first epitaxial layer and a second epitaxial layer, respectively differing in properties from each other, are grown on respective the first and second crystal surfaces, the step of deposition being performed such that the growth of the first and second epitaxial layers is controlled by the decomposition of the metal-organic molecule.
摘要翻译：在公共衬底上同时生长具有彼此不同的性质的多个外延层的方法包括以下步骤：至少形成在第一晶体表面和第二晶体表面上的晶体学上彼此不相同的衬底，将包含外延层的构成元素的粒子引入到衬底附近的区域中，所述颗粒至少包含含有构成外延层的元素之一的金属有机分子，分解金属 - 有机分子，使得层作为分解的结果释放其中的构成元素，并且将包含通过金属 - 有机分子分解释放的元素的上述颗粒沉积在第一和第二晶体表面上，使得分别具有第一外延层和第二外延层不同的性质彼此分别生长第一和第二晶体表面，进行沉积步骤使得通过金属 - 有机分子的分解来控制第一和第二外延层的生长。

2. 发明申请

WO02029873A1 METHOD OF EPITAXIAL GROWTH OF HIGH QUALITY NITRIDE LAYERS ON SILICON SUBSTRATES 审中-公开
标题翻译：硅衬底上高品质氮化层的外延生长方法
公开(公告)号：WO02029873A1
公开(公告)日：2002-04-11
申请号：PCT/US2001/027743
申请日：2001-10-02
IPC分类号： C30B23/02 , H01L21/20 , H01L33/00 , C30B25/04 , H01L21/203 , C36B23/68
CPC分类号： C30B23/02 , C30B29/403 , C30B29/406 , H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/02513 , H01L21/0254 , H01L21/02631 , H01L21/02658 , H01L33/007
摘要： Aluminium nitride, A1N, layers are grown on silicon substrate (12) using molecular beam epitaxial (MBE) growth. The A1N layer is initially grown by subjecting the silicon substrate to background ammonia followed by repetitively alternating the flux of 1) Al (22) without ammonia (27) and 2) ammonia without Al. After the surface of the silicon structure is sufficiently covered with AlN, the substrate is subjected to flux of ammonia and aluminium applied simultaneously to continue the epitaxial growth process. The process minimizes the formation of amorphous silicon nitride, SiN, compounds on the surface of the substrate which form due to background nitrogen levels in the molecular beam epitaxial growth apparatus. A surface free of amorphous silicon nitirde is necessary for the formation of high quality AlN. The AlN layer may be further used as abuffer layer for AlGaN/GaN growth. After the AlN layer (30) is grown on the silicon substrate, the silicon structure may be subjected to a flux of Ga and nitrogen to form a layer of GaN (40).
摘要翻译：使用分子束外延（MBE）生长在氮化硅衬底（12）上生长氮化铝，AlN层。最初通过使硅衬底经历背景氨，然后重复地交替没有氨（27）的1）Al（22）的焊剂和2）不含Al的氨来生长A1N层。在硅结构的表面被AlN充分覆盖之后，基板同时进行氨和铝的通量，以继续外延生长过程。该方法最小化由于分子束外延生长装置中的背景氮水平而形成的非晶氮化硅（SiN），衬底表面上的化合物的形成。无定形硅氮化物的表面对于形成高质量的AlN是必需的。 AlN层可以进一步用作AlGaN / GaN生长的吸收层。在硅衬底上生长AlN层（30）之后，可以将硅结构经受Ga和氮的通量以形成GaN层（40）。

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