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1. 发明授权

US06451391B1 Thin film formation method 有权
标题翻译：薄膜形成方法
公开(公告)号：US06451391B1
公开(公告)日：2002-09-17
申请号：US09392794
申请日：1999-09-09
申请人： Yuka Yamada , Takehito Yoshida , Nobuyasu Suzuki , Toshiharu Makino
发明人： Yuka Yamada , Takehito Yoshida , Nobuyasu Suzuki , Toshiharu Makino
IPC分类号： C23L1432
CPC分类号： C23C14/28
摘要： In a laser ablation method comprising the steps of irradiating a laser beam to target material 107, and depositing ejected species from the target material on a faced substrate 109 to form a thin film, an ambient gas is introduced into reaction chamber 101 under a constant certain pressure when the laser ablation is performed, using a target material with almost or the same composition as that of a thin film to be obtained. It is thereby possible to obtain a thin film with the same composition as that of the target material readily, without requiring an introduction of O2 gas and a substrate heating. As a result, it is not necessary to limit materials for a substrate, and it is possible to adjust the adaptability of an anaerobic process.
摘要翻译：在一种激光烧蚀方法中，包括以下步骤：将激光束照射到靶材料107上，并将来自目标材料的喷射物质沉积在表面基底109上以形成薄膜，将环境气体以恒定的一定值引入反应室101 使用与获得的薄膜几乎或相同组成的目标材料进行激光烧蚀时的压力。由此，可以容易地获得与目标材料组成相同的薄膜，而不需要引入O 2气体和基板加热。结果，不需要限制基板的材料，并且可以调节厌氧处理的适应性。

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