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1. 发明申请

US20020062883A1 Surface chemical treatment for liquid gallium or gallium alloy mirrors 失效
标题翻译：液态镓或镓合金镜的表面化学处理
公开(公告)号：US20020062883A1
公开(公告)日：2002-05-30
申请号：US09993349
申请日：2001-11-19
发明人： Laurent Bonneviot , Ermanno F. Borra
IPC分类号： C23C022/70 , B05D005/06
CPC分类号： G02B5/10 , C22B58/00 , C23C8/02 , C23C8/42 , G02B5/08
摘要： The invention relates to a method of treating a liquid gallium or gallium alloy surface for prolonged use as a liquid mirror. The method of the invention comprises the steps of (a) contacting the surface of liquid gallium or gallium alloy with an aqueous solution of a halogenic acid to cause dissolution of any gallium oxide present on the surface, thereby obtaining an oxide-free liquid gallium or gallium alloy surface covered with a layer of the acid solution; (b) adding to the acid solution an aqueous solution of a surfactant present in an amount to form a single bimolecular layer of surfactant at an interface between the liquid gallium or gallium alloy and water; and (c) allowing a uniform passivating oxide layer to gradually form on the oxide-free liquid gallium or gallium alloy surface, the passivating oxide layer having surface irregularities smaller than 40 nm.
摘要翻译：本发明涉及一种处理液体镓或镓合金表面以长期使用的方法，作为液体反射镜。本发明的方法包括以下步骤：（a）使镓或镓合金液体的表面与卤酸的水溶液接触，使表面上存在的任何氧化镓溶解，由此得到无氧化物的液态镓或镓合金表面覆盖一层酸溶液; （b）向酸溶液中加入一定量的表面活性剂水溶液，其量在液态镓或镓合金与水之间的界面处形成单一的表面活性剂双分子层; 和（c）在无氧化物的镓或镓合金表面上逐渐形成均匀的钝化氧化物层，所述钝化氧化物层具有小于40nm的表面凹凸。

2. 发明申请

US20030098090A1 Surface coatings 审中-公开
标题翻译：表面涂层
公开(公告)号：US20030098090A1
公开(公告)日：2003-05-29
申请号：US09988666
申请日：2001-11-20
发明人： Hans Hallen , Lars Ake Nilsson
IPC分类号： C23C022/70
CPC分类号： C22C32/0052 , C22C1/0433 , C23C8/64 , C23C24/10 , C23C26/02
摘要： The invention concerns a nickel based powdered metallic material comprising in addition to nickel 0-4.5 wt % of copper, 0-5.0% by weight of iron, whereby the total amount of copper and iron is at least 2.5% by weight, 0.05-5.0% by weight of a carbide forming element 0.5-2.0% by weight of boron, 1.0-4.0% by weight of silicon, 0.5-4.0% by weight of phosphorus, 0.01-0.5% by weight of C and less than 2% by weight of inevitable impurities.
摘要翻译：本发明涉及一种镍基粉末状金属材料，其中除了镍0-4.5重量％的铜，0-5.0重量％的铁以外，其中铜和铁的总量为至少2.5重量％，0.05-5.0重量％碳化物形成元素的重量百分比为0.5-2.0重量％的硼，1.0-4.0重量％的硅，0.5-4.0重量％的磷，0.01-0.5重量％的C和小于2重量％的不可避免的杂质。

3. 发明申请

US20040007790A1 Method and apparatus for producing semiconductor or metal particles 有权
标题翻译：用于制造半导体或金属颗粒的方法和装置
公开(公告)号：US20040007790A1
公开(公告)日：2004-01-15
申请号：US10418317
申请日：2003-04-18
发明人： Kenji Kato , Yukio Yamaguchi , Seiichi Isomae , Masaki Miyazaki
IPC分类号： B29B009/00 , B05C005/00 , C23C016/00 , C23C022/70 , H01L021/44 , H01L021/20
CPC分类号： B22F9/08 , B01J2/04 , B22F2009/0816 , B22F2009/0888 , B22F2009/0892
摘要： A method for producing semiconductor or metal particles comprises the steps of: storing a semiconductor or metal melt in a crucible having a nozzle; supplying a gas comprising at least one selected from the group consisting of He, Ne, Ar, Kr and Xe into the crucible such that the pressure of the supplied gas in a space over the melt in the crucible is higher than the pressure of a gaseous phase into which the melt is dropped; dropping the melt from the nozzle into the gaseous phase by the pressure of the gas to form liquid particles; and solidifying the liquid particles in the gaseous phase to obtain semiconductor or metal particles. The crucible comprises at least one selected from the group consisting of hexagonal BN, cubic BN, Si3N4, TiB2, ZrB2, zirconia and stabilized zirconia at least near the nozzle. Alternatively, the crucible comprises quartz glass at least near the nozzle and has a heat-resistant support member for suppressing deformation caused by a decrease in viscosity of the quartz glass at high temperatures.
摘要翻译：一种制造半导体或金属颗粒的方法包括以下步骤：将半导体或金属熔体储存在具有喷嘴的坩埚中; 将包含选自He，Ne，Ar，Kr和Xe中的至少一种的气体供应到坩埚中，使得在坩埚中的熔体上方的供应气体的压力高于气体的压力熔体滴入其中的相; 通过气体的压力将熔体从喷嘴滴入气相中以形成液体颗粒; 并使气相中的液体颗粒固化，得到半导体或金属颗粒。所述坩埚至少包括至少一个选自六边形BN，立方BN，Si3N4，TiB2，ZrB2，氧化锆和稳定的氧化锆的至少一种，至少在喷嘴附近。或者，坩埚包括至少在喷嘴附近的石英玻璃，并且具有用于抑制在高温下石英玻璃的粘度降低引起的变形的耐热支撑构件。

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