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    • 4. 发明申请
    • Alloy type thermal fuse and fuse element thereof
    • 合金型热熔丝及其熔丝元件
    • US20030170140A1
    • 2003-09-11
    • US10379324
    • 2003-03-04
    • Uchihashi Estec Co., Ltd.
    • Yoshiaki Tanaka
    • C22C028/00
    • H01H37/761H01H2037/768
    • The invention provides a thermal fuse and a fuse element of the low-melting fusible alloy type. The fuse element has an alloy composition in which a total of 0.01 to 7 weight parts of at least one selected from the group consisting of Au, Bi, Cu, Ni, and Pd is added to 100 weight parts of a composition of 100% In, that of 90 to 99.9% In and 0.1 to 10% Ag, or that of 95 to 99.9% In and 0.1 to 5% Sb. As a result, the operating temperature is in the range of 135 to 160null C., requests for environment conservation can be satisfied, the diameter of the fuse element can be made very thin or reduced to about 300 nullmnull, and the thermal stability can be satisfactorily guaranteed.
    • 本发明提供一种低熔点易熔合金型热熔丝和熔丝元件。 保险丝元件具有合金组成,其中将总计0.01至7重量份的选自Au,Bi,Cu,Ni和Pd中的至少一种添加到100重量份的100重量份的组合物中 ,90〜99.9%的In和0.1〜10%的Ag,或95〜99.9%的In和0.1〜5%的Sb。 结果,工作温度在135〜160℃的范围内,可以满足环保要求,可以使熔断体的直径变得非常薄或减少到约300毫米,热稳定性可以 得到圆满的保证。
    • 5. 发明申请
    • High purity gallium for producing compound semiconductor, refining process and apparatus for the same
    • 用于生产化合物半导体的高纯度镓,精炼工艺及其设备
    • US20020162419A1
    • 2002-11-07
    • US10134381
    • 2002-04-30
    • DOWA MINING CO., LTD.
    • Takeharu YamamuraHidekazu KatoTakashi OhgamiKishio TayamaKanichi Okuda
    • C22B007/04C22C028/00C22B058/00
    • C22B58/00C22B9/02C22B9/14Y02P10/234
    • In a process for separating impurities from a raw gallium material containing impurities, a process for refining gallium comprising progressively solidifying a raw gallium material provided in a liquid state inside a vessel while applying stirring, such that the diameter of the tubular solidification boundary gradually advances from the inner wall plane of the vessel towards the center of the vessel to reduce the diameter of the tubular solidification boundary, and separating the liquid phase remaining in the central portion of the vessel from the solidified phase before the entire raw material inside the vessel is solidified. The process above is repeated as required by using, as the raw gallium material, the solidified phase from which the liquid phase is separated. A metallic gallium favorably used for the preparation of a compound semiconductor can be obtained by analyzing the impurity concentration of the impurity-concentrated Ga separated from the solidified layer.
    • 在从含有杂质的原料镓材料中分离杂质的方法中,提炼镓的方法包括在搅拌的同时逐渐固化容器内液态的原料镓材料,使得管状凝固界面的直径从 容器的内壁平面朝向容器的中心,以减小管状凝固边界的直径,并且在容器内部的整个原料固化之前将残留在容器的中心部分的液相与固化相分离 。 根据需要,通过使用分离液相的凝固相作为原料镓材料来重复上述过程。 可以通过分析从凝固层分离的杂质浓缩的Ga的杂质浓度来获得有利地用于制备化合物半导体的金属镓。