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1. 发明申请

US20030203804A1 Aluminum nitride materials and members used for the production of semiconductors 有权
标题翻译：氮化铝材料和用于半导体生产的部件
公开(公告)号：US20030203804A1
公开(公告)日：2003-10-30
申请号：US10417962
申请日：2003-04-17
申请人： NGK Insulators, Ltd.
发明人： Naomi Teratani , Jun Yoshikawa , Yuji Katsuda
IPC分类号： C04B035/581 , C04B035/582
CPC分类号： C04B35/581
摘要： An object of the present invention is to provide an aluminum nitride material having a high thermal conductivity and reduced volume resistivity at room temperature. An aluminum nitride material has interconnected intergranular phase functioning as electrical conductive phase. The material has a content of the conductive phase of not higher than 20 percent, calculated according to the following formula based on an X-ray diffraction profile. Content of the conductive phase (%)null(Integrated strength of the strongest peak of the conductive phase/Integrated strength of the strongest peak of aluminum nitride phase)null100. Alternatively, the material has an electric current response index of not lower than 0.9 and not higher than 1.1 defined according to the following formula. Electric current response indexnull(Electric current at 5 seconds after a voltage is applied/Electric current at 60 seconds after a voltage is applied).
摘要翻译：本发明的目的是提供一种在室温下具有高导热性和体积电阻率降低的氮化铝材料。氮化铝材料具有作为导电相的相互作用的晶间相。该材料的导电相含量不高于20％，根据以下公式计算，基于X射线衍射图。导电相的含量（％）=（导电相的最强峰的集成强度/氮化铝相的最强峰的集成强度）×100。或者，该材料具有不低于0.9且不高于根据下式定义的电流响应指数。电流响应指数=（施加电压后5秒的电流/施加电压后60秒的电流）。

2. 发明申请

US20030153452A1 Aluminum nitride ceramics, members for use in a system for producing semiconductors, corrosion resistant members and conductive members 有权
标题翻译：氮化铝陶瓷，用于制造半导体的系统的构件，耐腐蚀构件和导电构件
公开(公告)号：US20030153452A1
公开(公告)日：2003-08-14
申请号：US10306678
申请日：2002-11-26
申请人： NGK Insulators, Ltd.
发明人： Yuji Katsuda , Jun Yoshikawa
IPC分类号： C04B035/581 , C04B035/582
CPC分类号： C04B35/645 , C04B35/581 , C04B2235/3222 , C04B2235/3225 , C04B2235/3804 , C04B2235/3817 , C04B2235/3821 , C04B2235/386 , C04B2235/3865 , C04B2235/422 , C04B2235/761 , C04B2235/77 , C04B2235/78 , C04B2235/80 , C04B2235/85 , C04B2235/96 , C04B2235/9607
摘要： An object of the present invention is to preserve the characteristic properties of an aluminum nitride ceramics and reduce its volume resistivity. An aluminum nitride ceramics contains boron atoms in an amount of not lower than 1.0 weight percent and carbon atoms in an amount of not lower than 0.3 weight percent and has a volume resistivity at room temperature of not higher than 1null1012 nullnullcm. Alternatively, an aluminum ceramics comprises aluminum nitride and intergranular phases mainly consisting of boron nitride constituting a conducting path and has a volume resistivity at room temperature of 1null1012 nullnullcm. Such ceramics may be obtained by holding a mixture at least containing aluminum nitride and boron carbide at a holding temperature not lower than 1400null C. and not higher than 1800 null C. and then sintered at a maximum temperature higher than the holding temperature.
摘要翻译：本发明的目的是保持氮化铝陶瓷的特性，降低体积电阻率。氮化铝陶瓷含有不低于1.0重量％的硼原子和不低于0.3重量％的碳原子，并且在室温下的体积电阻率不高于1×10 12 OMEGA·cm。或者，铝陶瓷包括主要由构成导电路径的氮化硼组成的氮化铝和晶间相，并且在室温下的体积电阻率为1×10 12欧姆·厘米。这样的陶瓷可以通过将保持至少含有氮化铝和碳化硼的混合物保持在不低于1400℃且不高于1800℃的保持温度下，然后在高于保持温度的最高温度下烧结来获得。

3. 发明申请

US20040242400A1 Carbon-containing aluminum nitride sintered compact and ceramic substrate for use in equipment for manufacturing or inspecting semiconductor 有权
标题翻译：含碳氮化铝烧结体和用于制造或检测半导体的设备的陶瓷衬底
公开(公告)号：US20040242400A1
公开(公告)日：2004-12-02
申请号：US10876665
申请日：2004-06-28
申请人： IBIDEN CO., LTD.
发明人： Yasutaka Ito , Yasuji Hiramatsu
IPC分类号： C04B035/581
CPC分类号： H01L21/67103 , C04B35/581 , H01L21/6831 , Y10T279/23 , Y10T428/24917 , Y10T428/30
摘要： An objective of the present invention is to provide an aluminum nitride sintered body making it possible to keep a volume resistivity of 108nullnullcm or more, and guarantee covering-up capability, a large radiant heat amount and measurement accuracy with a thermoviewer. A carbon-containing aluminum nitride sintered body of the present invention of the present invention comprising: carbon whose peak cannot be detected on its X-ray diffraction chart or whose peak is below its detection limit thereon; in a matrix made of aluminum nitride.
摘要翻译：本发明的目的是提供一种氮化铝烧结体，其可以使体积电阻率保持在10 -8Ω·cm以上，并且保证覆盖能力，辐射热量大，测量精度高热电影本发明的含碳氮化铝烧结体，其特征在于，具有：在其X射线衍射图上峰不能被检出或其峰值低于其检测限的碳; 在由氮化铝制成的基体中。

4. 发明申请

US20040097359A1 Aluminum nitride sintered body, method for producing aluminum nitride sintered body, ceramic substrate and method for producing ceramic substrate 审中-公开
标题翻译：氮化铝烧结体，氮化铝烧结体的制造方法，陶瓷基板及陶瓷基板的制造方法
公开(公告)号：US20040097359A1
公开(公告)日：2004-05-20
申请号：US10181724
申请日：2002-09-27
发明人： Yasuji Hiramatsu , Yasutaka Ito
IPC分类号： C04B035/581 , C04B033/32
CPC分类号： C04B35/645 , B32B18/00 , B32B2038/042 , B32B2311/08 , C04B33/14 , C04B33/20 , C04B33/30 , C04B33/32 , C04B35/10 , C04B35/185 , C04B35/195 , C04B35/46 , C04B35/5607 , C04B35/5611 , C04B35/5622 , C04B35/5626 , C04B35/565 , C04B35/575 , C04B35/58007 , C04B35/58014 , C04B35/581 , C04B35/583 , C04B35/584 , C04B35/62655 , C04B35/6303 , C04B35/64 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3284 , C04B2235/3296 , C04B2235/3409 , C04B2235/3418 , C04B2235/3821 , C04B2235/3826 , C04B2235/3865 , C04B2235/422 , C04B2235/604 , C04B2235/662 , C04B2235/75 , C04B2235/78 , C04B2235/96 , C04B2237/365 , C04B2237/366 , C04B2237/403 , C04B2237/408 , C04B2237/50 , C04B2237/62 , C04B2237/704 , H05B3/143
摘要： The purpose of the present invention is to provide a method for manufacturing a ceramic substrate hardly causing cracks and damages and the like attributed to pushing pressure and the like since the strength of the above-mentioned ceramic substrate is higher than that of a conventional one even in the case of manufacturing a large size ceramic substrate capable of placing a semiconductor wafer with a large diameter and the like. The present invention is to provide a method for manufacturing a ceramic substrate having a conductor formed on the surface thereof or internally thereof, including the steps of: firing a formed body containing a ceramic powder to produce a primary sintered body; and performing an annealing process to the primary sintered body at a temperature of 1400null C. to 1800null C., after the preceding step.
摘要翻译：本发明的目的是提供一种由于上述陶瓷基板的强度高于常规的陶瓷基板的强度而导致由于推压等引起的几乎不产生裂纹和损伤等的陶瓷基板的制造方法在制造能够放置具有大直径等的半导体晶片的大尺寸陶瓷基板的情况下。本发明提供一种陶瓷基板的制造方法，其具有在其表面或内部形成有导体的陶瓷基板，包括以下步骤：对包含陶瓷粉末的成形体进行烧制以制备初级烧结体; 并且在前一步骤之后，在1400℃至1800℃的温度下对初级烧结体进行退火处理。

5. 发明申请

US20040222211A1 Carbon-containing aluminum nitride sintered body, and ceramic substrate for a semiconductor producing/examining device 审中-公开
标题翻译：含碳氮化铝烧结体和半导体制造/检查装置用陶瓷基板
公开(公告)号：US20040222211A1
公开(公告)日：2004-11-11
申请号：US10858044
申请日：2004-06-02
申请人： IBIDEN CO., LTD.
发明人： Yasuji Hiramatsu , Yasutaka Ito
IPC分类号： C04B035/581 , H05B003/68
CPC分类号： C04B35/63424 , C04B35/581 , C04B35/593 , C04B35/645 , G01R1/07307 , G01R3/00 , H01L21/6833
摘要： An object of the present invention is to provide a carbon-containing aluminum nitride sintered body wherein no short circuit is caused since its volume resistivity at a high temperature range of 200null C. or higher (for example, about 500null C.) is sufficiently high, that is, at least 1null108 nullnullcm or more, and also wherein covering-up capability, a large radiant heat amount and measurement accuracy with a thermoviewer can be assured. The carbon-containing aluminum nitride sintered body of the present invention is comprising carbon whose peaks appear near 1580 cmnull1 and near 1355 cmnull1 in laser Raman spectral analysis in a matrix made of aluminum nitride.
摘要翻译：本发明的目的在于提供一种含有氮化铝的烧结体，其在200℃以上（例如500℃左右）的高温范围内的体积电阻率不会导致短路，足够高，即至少1×10 8Ω·cm以上，并且还可以确保覆盖能力，大的辐射热量和具有热观察者的测量精度。本发明的含碳氮化铝烧结体包括在由氮化铝制成的基体的激光拉曼光谱分析中出现峰在1580cm -1附近和1355cm -1附近的碳。

6. 发明申请

US20040171474A1 Aluminum nitride materials and members for use in the production of semiconductors 有权
标题翻译：氮化铝材料和用于半导体生产的部件
公开(公告)号：US20040171474A1
公开(公告)日：2004-09-02
申请号：US10785774
申请日：2004-02-24
申请人： NGK Insulators, Ltd.
发明人： Yoshimasa Kobayashi , Toru Hayase , Naomi Teratani , Jun Yoshikawa , Naohito Yamada
IPC分类号： C04B035/581
CPC分类号： C01B21/0602 , C01B21/072 , C01P2002/54 , C01P2002/72 , C01P2002/85 , C01P2004/03 , C01P2004/04 , C01P2004/61 , C01P2006/40 , C04B35/581
摘要： An object of the present invention is to provide a novel aluminum nitride material of aluminum nitride base and having a low volume resistivity at room temperature. An aluminum nitride material has aluminum nitride as a main component and europium in a content of 0.03 mole percent or more calculated as the oxide, and the material has aluminum nitride and an europium-aluminum composite oxide phases. Alternatively, an aluminum nitride material has aluminum nitride as a main component and europium and samarium in a total content of 0.09 mole percent or more calculated as the oxides, and the material has aluminum nitride phase and a composite oxide phase containing at least europium and aluminum.
摘要翻译：本发明的目的是提供一种氮化铝基底的新型氮化铝材料，并且在室温下具有低体积电阻率。氮化铝材料以氮化铝为主要成分，铕以氧化物计算为0.03摩尔％以上，该材料为氮化铝和铕 - 铝复合氧化物相。或者，氮化铝材料以氮化铝为主要成分，铕和钐的总含量为0.09摩尔％以上，作为氧化物计算，该材料具有氮化铝相和至少含有铕和铝的复合氧化物相。

7. 发明申请

US20030054939A1 Silicon carbide ceramic composition and method of making 有权
标题翻译：碳化硅陶瓷组合物及其制造方法
公开(公告)号：US20030054939A1
公开(公告)日：2003-03-20
申请号：US09933463
申请日：2001-08-20
发明人： Vimal K. Pujari , William T. Collins
IPC分类号： C04B035/565 , C04B035/581
CPC分类号： C04B35/6303 , C04B35/565 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3821 , C04B2235/422
摘要： The present application is directed to ceramic compositions and, more specifically, to a silicon carbide composition and method of making it through liquid phase sintering. In one embodiment, the present invention is directed to an unsintered ceramic body including a rare earth metal oxide, one of a glass phase metal oxide and a glass phase metal nitride, a boron containing compound, a free carbon containing compound and silicon carbide. In another embodiment, the present invention is directed to a method of making a sintered ceramic body. The method includes combining a rare earth metal oxide, one of a glass phase metal oxide and a glass phase metal nitride, a boron containing compound, a free carbon containing compound, and silicon carbide to form a green ceramic. The method further includes shaping the green ceramic into a ceramic body and sintering the ceramic body.
摘要翻译：本申请涉及陶瓷组合物，更具体地涉及碳化硅组合物及其通过液相烧结制备的方法。在一个实施方案中，本发明涉及包括稀土金属氧化物，玻璃相金属氧化物和玻璃相金属氮化物之一的未烧结陶瓷体，含硼化合物，含游离碳的化合物和碳化硅。在另一个实施方案中，本发明涉及制备烧结陶瓷体的方法。该方法包括将稀土金属氧化物，玻璃相金属氧化物和玻璃相金属氮化物之一，含硼化合物，含游离碳的化合物和碳化硅组合以形成生坯陶瓷。该方法还包括将生坯陶瓷成型为陶瓷体并烧结陶瓷体。

8. 发明申请

US20040005981A1 Wear-resistant coating for metal-removing tools, particularly for rotary metal-cutting tools 有权
标题翻译：用于金属去除工具的耐磨涂层，特别是用于旋转金属切削工具
公开(公告)号：US20040005981A1
公开(公告)日：2004-01-08
申请号：US10393183
申请日：2003-03-20
申请人： DR.JORG GUHRING
发明人： Frank-R Weber , Eberhard Moll
IPC分类号： C04B035/581 , C04B035/582 , B32B015/04
CPC分类号： C23C28/044 , C23C28/42 , C23C30/00 , C23C30/005 , Y02T50/67 , Y10T428/12576
摘要： The invention concerns a wear-resistant coating on rotary metal-cutting tools such as drill bits, countersinks, milling cutters, screw taps, reamers, etc. The coating according to the invention consists essentially of nitrides of Cr, Ti and Al with a unusually high share of Cr atoms, namely 30 to 60% referred to the totality of metal atoms. In multilayer coatings and even more in coatings made of homogeneous mixed phases, this high Cr share results in particularly large tool life distances for the tools hardened with these coatings. These tools exhibit their superiority particularly during dry use without cooling lubricants or with minimal lubrication.
摘要翻译：本发明涉及旋转金属切削工具如钻头，埋头孔，铣刀，螺旋丝锥，铰刀等上的耐磨涂层。根据本发明的涂层基本上由Cr，Ti和Al的氮化物组成，具有异常的高分子量的Cr原子，即30〜60％的金属原子总数。在多层涂层中，甚至更多在由均匀混合相制成的涂层中，这种高Cr份额对于用这些涂层硬化的工具的工具寿命特别大。这些工具尤其在干燥使用时，无需冷却润滑剂或极少的润滑性就具有优势。

9. 发明申请

US20030130106A1 Aluminum nitride ceramics, members for use in a system for producing semiconductors, and corrosion resistant members 有权
标题翻译：氮化铝陶瓷，用于半导体制造系统的部件和耐腐蚀部件
公开(公告)号：US20030130106A1
公开(公告)日：2003-07-10
申请号：US10308221
申请日：2002-11-26
申请人： NGK Insulators, Ltd.
发明人： Jun Yoshikawa , Yuji Katsuda
IPC分类号： C04B035/581
CPC分类号： C04B35/581 , C04B35/64 , C04B35/645 , C04B2235/3217 , C04B2235/3222 , C04B2235/3225 , C04B2235/3804 , C04B2235/3821 , C04B2235/386 , C04B2235/3865 , C04B2235/3895 , C04B2235/604 , C04B2235/661 , C04B2235/723 , C04B2235/761 , C04B2235/77 , C04B2235/80 , C04B2235/85 , C04B2235/96 , C04B2235/9607
摘要： It is an object of the present invention to increase the volume resistivity of an aluminum nitride ceramics. An aluminum nitride ceramics contains 0.5 to 10 weight percent of boron atoms and 0.1 to 2.5 weight percent of carbon atoms and having a volume resistivity at room temperature of not lower than 1null1014 nullnullcm. Alternatively, the ceramics has a volume resistivity at 500null C. of not lower than 1null108 nullnullcm. Alternatively, an aluminum nitride ceramics has an a-axis lattice constant of aluminum nitride not shorter than 3.112 angstrom and a c-axis lattice constant of aluminum nitride not shorter than 4.980 angstrom.
摘要翻译：本发明的目的是提高氮化铝陶瓷的体积电阻率。氮化铝陶瓷含有0.5-10重量％的硼原子和0.1-2.5重量％的碳原子，并且在室温下的体积电阻率不低于1×10 14欧姆·厘米。或者，陶瓷在500℃下的体积电阻率不低于1×10 8欧姆·厘米。或者，氮化铝陶瓷具有不小于3.112埃的氮化铝的a轴晶格常数和不小于4.980埃的氮化铝的c轴晶格常数。

10. 发明申请

US20020160903A1 Method for manufacturing aluminum nitride sintered body in which via hole is made 失效
标题翻译：制造通孔的氮化铝烧结体的制造方法
公开(公告)号：US20020160903A1
公开(公告)日：2002-10-31
申请号：US10049356
申请日：2002-02-06
发明人： Reo Yamamoto , Yoshihide Kamiyama
IPC分类号： C04B035/581
CPC分类号： H01L23/49883 , C04B35/581 , H01L21/486 , H01L23/49827 , H01L2924/0002 , H05K1/0306 , H05K1/115 , H05K3/4061 , H05K2201/09781 , H01L2924/00
摘要： A sintered aluminum nitride having satisfactorily densified via holes, which is free from cracking and has excellent appearance, is produced through firing an aluminum nitride molding having at least one highly isolated through-hole for via hole formation. At least one through-hole for formation of dummy via holes not used for electrical connection is formed around the highly isolated through-hole for via hole formation, and the through-hole for dummy via hole formation is also filled with a conductive paste. Thereafter, the aluminum nitride molding is fired into the sintered aluminum nitride.
摘要翻译：通过烧制具有至少一个用于通孔形成的至少一个高度隔离的通孔的氮化铝成型体，制造具有令人满意的致密化通孔的烧结氮化铝，其不含裂纹并具有优异的外观。在用于通孔形成的高度隔离的通孔周围形成用于形成未用于电连接的虚设通孔的至少一个通孔，并且用于虚拟通孔形成的通孔也填充有导电膏。此后，将氮化铝成型体烧成氮化铝烧结体。

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