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    • 2. 发明申请
    • Ceramics and process for producing
    • US20020039959A1
    • 2002-04-04
    • US09969443
    • 2001-10-02
    • C-Max Technology, Inc.
    • Xi Yang
    • C04B035/10C04B035/565C04B035/56
    • C04B35/803B24C5/04C04B35/117C04B35/64C04B41/52F27D1/0006F27D1/16F27D3/16
    • The present invention provides a process for producing alumina matrix carbide and boride reinforced ceramic composites wherein for any particular composite, the relative density is about 97% or more of the theoretical density. The composites are prepared in a container wherein the interior surfaces of the container are graphite and have a protective coating consisting of a first layer comprising silicon carbide and boron carbide with a binder and a second layer comprising silicon carbide particles, wherein the protective coating prevents carbon bleed-through and the protective coating maintains a boride-containing equilibrium atmosphere during the process. The present invention further provides an alumina-based ceramic composite which comprises a metal carbide preferably selected from the group consisting of silicon carbide, titanium carbide and zirconium carbide, and mixtures thereof, and a boride preferably selected from the group consisting of boron carbide, titanium boride, or zirconium boride, and mixtures thereof. Finally, the present invention provides a protective coating for a surface comprising a first layer of a silicon carbide and a boron carbide in a binder and a second layer comprising a silicon carbide wherein the protective coating is able to withstand repeated exposure to high temperature.
    • 3. 发明申请
    • Ceramics and process for producing
    • 陶瓷和生产工艺
    • US20020037800A1
    • 2002-03-28
    • US09969468
    • 2001-10-02
    • C-Max Technology, Inc.
    • Xi Yang
    • C04B035/56C04B035/565
    • C04B35/803B24C5/04C04B35/117C04B35/64C04B41/52F27D1/0006F27D1/16F27D3/16
    • The present invention provides a process for producing alumina matrix carbide and boride reinforced ceramic composites wherein for any particular composite, the relative density is about 97% or more of the theoretical density. The composites are prepared in a container wherein the interior surfaces of the container are graphite and have a protective coating consisting of a first layer comprising silicon carbide and boron carbide with a binder and a second layer comprising silicon carbide particles, wherein the protective coating prevents carbon bleed-through and the protective coating maintains a boride-containing equilibrium atmosphere during the process. The present invention further provides an alumina-based ceramic composite which comprises a metal carbide preferably selected from the group consisting of silicon carbide, titanium carbide and zirconium carbide, and mixtures thereof, and a boride preferably selected from the group consisting of boron carbide, titanium boride, or zirconium boride, and mixtures thereof. Finally, the present invention provides a protective coating for a surface comprising a first layer of a silicon carbide and a boron carbide in a binder and a second layer comprising a silicon carbide wherein the protective coating is able to withstand repeated exposure to high temperature.
    • 本发明提供一种生产氧化铝基质碳化物和硼化物增强陶瓷复合材料的方法,其中对于任何特定的复合材料,相对密度为理论密度的约97%或更高。 复合材料制备在容器中,其中容器的内表面是石墨,并且具有由包含碳化硅和碳化硼与粘合剂的第一层组成的保护涂层和包含碳化硅颗粒的第二层,其中保护涂层防止碳 渗透和保护涂层在该过程中保持含硼化物的平衡气氛。 本发明还提供了一种氧化铝基陶瓷复合材料,其包含优选选自碳化硅,碳化钛和碳化锆的金属碳化物及其混合物,硼化物优选选自碳化硼,钛 硼化物或硼化锆,及其混合物。 最后,本发明提供了一种用于表面的保护涂层,其包括粘合剂中的碳化硅第一层和碳化硼,以及包含碳化硅的第二层,其中保护涂层能够经受反复暴露于高温。
    • 6. 发明申请
    • Boron carbide composite bodies, and methods for making same
    • 碳化硼复合体及其制造方法
    • US20030110931A1
    • 2003-06-19
    • US09990175
    • 2001-11-20
    • Michael K. AghajanianAllyn L. McCormickBradley N. MorganAnthony F. Liszkiewicz JR.
    • C04B035/56
    • F41H5/0435B32B2315/02C04B35/563C04B35/565C04B35/573C04B35/6261C04B35/62625C04B35/62655C04B2235/3821C04B2235/3826C04B2235/405C04B2235/422C04B2235/428C04B2235/48C04B2235/5248C04B2235/5436C04B2235/5472C04B2235/728C04B2235/77C04B2235/80C04B2235/94C04B2235/96C04B2237/365F41H5/0414
    • A composite body produced by a reactive infiltration process that possesses high mechanical strength, high hardness and high stiffness has applications in such diverse industries as precision equipment and ballistic armor. Specifically, the composite material features a boron carbide filler or reinforcement phase, and a silicon carbide matrix produced by the reactive infiltration of an infiltrant having a silicon component with a porous mass having a carbonaceous component. Potential deleterious reaction of the boron carbide with silicon during infiltration is suppressed by alloying or dissolving boron into the silicon prior to contact of the silicon infiltrant with the boron carbide. In a preferred embodiment of the invention related specifically to armor, good ballistic performance can be advanced by loading the porous mass or preform to be infiltrated to a high degree with one or more hard fillers such as boron carbide, and by limiting the size of the largest particles making up the mass. The instant reaction-bonded silicon carbide (RBSC) composite bodies surpass previous RBSC's as armor materials, and in this capacity approach the ballistic performance of current carbide armor ceramics but with potentially lower cost manufacturing methods, e.g., infiltration techniques.
    • 通过具有高机械强度,高硬度和高刚度的反应性渗透方法生产的复合体可用于精密设备和防弹装甲等多种行业。 具体地,复合材料具有碳化硼填料或增强相,并且通过具有硅组分的浸润剂的反应性浸渗与具有碳质组分的多孔质量产生的碳化硅基体。 渗碳过程中碳化硼与硅的潜在有害反应可以通过在硅渗透剂与碳化硼接触之前将硼合金化或溶解到硅中来抑制。 在本发明的一个优选实施方案中,具体涉及铠装,通过将一种或多种硬质填料例如碳化硼加载到高度渗透的多孔质量体或预型体,可以提高良好的弹道性能,并且通过限制 弥补质量的最大颗粒。 即时反应粘结碳化硅(RBSC)复合体超过以前的RBSC作为铠装材料,并且在这种能力下接近目前的硬质合金装甲陶瓷的弹道性能,但具有潜在的较低成本的制造方法,例如渗透技术。
    • 8. 发明申请
    • SINTERED SILICON CARBIDE AND METHOD FOR CLEANING THE SAME IN WET CONDITION
    • 烧结碳化硅及其在湿润条件下清洗相同的方法
    • US20020005213A1
    • 2002-01-17
    • US09449764
    • 1999-11-26
    • MASASHI OTSUKIHIROAKI WADA
    • B08B007/04B08B003/12C04B035/56
    • C04B41/009B08B3/12C04B35/575C04B41/5315C04B41/91C04B2111/00844C04B35/565
    • A sintered silicon carbide has a high density and only small amounts of organic and inorganic impurities on the surface and in the vicinity of the surface, i.e., a density of 2.9 g/cm2 or more and an amount of each impurity smaller than 1.0null1011 atoms/cm2 on the surface and in the vicinity of the surface. A method for cleaning sintered silicon carbide in a wet condition comprises treating sintered silicon carbide in a step of dipping into a quasi-aqueous organic solvent, a step of dipping into an aqueous solution of an ammonium compound, a step of dipping into an aqueous solution of an inorganic acid and a step of dipping into pure water. Organic and inorganic impurities present on the surface and in the vicinity of the surface of the sintered silicon carbide are removed easily in accordance with the method.
    • 烧结碳化硅在表面和表面附近具有高密度和仅有少量有机和无机杂质,即2.9g / cm 2以上的密度和每个杂质的量小于1.0×10 11个原子 / cm2在表面和表面附近。 一种在湿条件下清洗烧结碳化硅的方法包括在浸入准水性有机溶剂的步骤中处理烧结碳化硅,浸入铵化合物的水溶液的步骤,浸入水溶液的步骤 的无机酸和浸入纯水的步骤。 根据该方法容易地除去存在于烧结碳化硅表面和附近的有机和无机杂质。