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1. 发明授权

US06255128B1 Non-contact method for determining the presence of a contaminant in a semiconductor device 失效
标题翻译：用于确定半导体器件中污染物的存在的非接触方法
公开(公告)号：US06255128B1
公开(公告)日：2001-07-03
申请号：US09130240
申请日：1998-08-06
申请人： Carlos M. Chacon , Pradip K. Roy
发明人： Carlos M. Chacon , Pradip K. Roy
IPC分类号： B01R3126
CPC分类号： G01N27/002 , H01L22/12
摘要： The present invention provides a non-contact method for determining whether a contaminant is present in a semiconductor wafer having a substrate/dielectric interface formed thereon. in one advantageous embodiment, the method comprises field inducing a junction in equilibrium inversion in the semiconductor wafer device. A conventional corona source may be used to induce the junction to equilibrium inversion. This particular embodiment further includes forming a contaminant junction near the substrate/dielectric interface when the contaminant is present in the semiconductor wafer by adding charge and pulsing the junction out of equilibrium. A surface voltage measurement, which may be taken with a Kelvin probe, is obtained by measuring a change in a surface voltage as a function of time. The method further includes determining whether the contaminant is present in the semiconductor wafer from the change in the surface voltage. When the contaminant is present in the device, the change in the surface voltage is negligible. This negligible change is in stark contrast to the change in surface voltage that occurs in a non-contaminated device. The data obtained from these surface voltages can be plotted with conventional devices to yield the change in surface voltage with respect to time.
摘要翻译：本发明提供了一种用于确定在其上形成有衬底/电介质界面的半导体晶片中是否存在污染物的非接触方法。在一个有利的实施例中，该方法包括在半导体晶片装置中的场平衡反转中的场感应。传统的电晕源可以用来诱导结到平衡反转。该特定实施例还包括当通过添加电荷并将结合脉冲到平衡之外，当污染物存在于半导体晶片中时，在衬底/电介质界面附近形成污染物结。通过测量作为时间的函数的表面电压的变化可获得可以用开尔文探针进行的表面电压测量。该方法还包括根据表面电压的变化确定污染物是否存在于半导体晶片中。当设备中存在污染物时，表面电压的变化可以忽略不计。这个微不足道的变化与在非污染设备中发生的表面电压的变化形成鲜明的对比。从这些表面电压获得的数据可以用常规装置绘制，以产生相对于时间的表面电压的变化。

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