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    • 1. 发明授权
    • Ion implanting apparatus and ion implanting method
    • 离子注入装置和离子注入方法
    • US06800862B2
    • 2004-10-05
    • US10314117
    • 2002-12-09
    • Takao MatsumotoKohichi OrihiraKazuhiro NakaoMitsunori Nakamura
    • Takao MatsumotoKohichi OrihiraKazuhiro NakaoMitsunori Nakamura
    • B01D5444
    • H01J37/3171H01J2237/304
    • The ion implanting apparatus is provided with a control device which controls the operating state thereof in a period during which ion implantation is not carried out for a substrate in the state in any mode selected from the above (a) twilight mode in which the flow rate of the raw gas supplied to an ion source and the power supplied from a plasma producing power source are reduced to values capable of keeping plasma production in the ion source, (b) magnet-off mode in which in addition to the state in the twilight mode, the outputs from an energy separating magnet power source, scanning magnet power source and beam paralleling magnet power source are stopped, and (c) shut-down mode in which the supply of the raw gas is stopped and the outputs from the power sources are stopped.
    • 离子注入装置设置有控制装置,该控制装置在从上述(a)暮光模式中选择的任何模式的状态下对基板进行离子注入的时间段期间控制其操作状态,其中流量 提供给离子源的原料气体和从等离子体产生电源供给的功率被降低到能够在离子源中保持等离子体生成的值,(b)除了暮色状态之外的磁体断开模式 停止从能量分离磁体电源,扫描磁体电源和光束平行磁体电源的输出,以及(c)原料气体的供给停止的停止模式和电源的输出 被停止