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1. 发明公开

CN1322309A 可电离辐射成象的感光聚合物组合物无效
公开(公告)号：CN1322309A
公开(公告)日：2001-11-14
申请号：CN99811798.6
申请日：1999-10-05
申请人：纳幕尔杜邦公司
发明人： Y·王
IPC分类号： G03F7/027 , G03F7/004 , G03C9/08
CPC分类号： G03F7/027 , B33Y70/00 , G03F7/0037 , G03F7/038 , Y10S430/106 , Y10S430/107 , Y10S430/108 , Y10S430/11 , Y10S430/111 , Y10S430/143 , Y10S430/146 , Y10S430/154 , Y10S430/167 , Y10S430/168
摘要：本发明公开了在曝光于电离辐射,如X射线、电子束、离子束和γ射线时可成象聚合/交联的组合物。本发明还公开了使用这些组合物进行陶瓷显微制造、立体平版印刷及可用于光刻胶的X射线、电子束和离子束平版印刷的方法。

2. 发明公开

EP1121623A1 IONIZATION RADIATION IMAGEABLE PHOTOPOLYMER COMPOSITIONS 审中-公开
标题翻译： IONISIERENDE BESTRAHLUNGSBEBILDBARE PHOTOPOLYMERZUSAMMENSETZUNGEN
公开(公告)号：EP1121623A1
公开(公告)日：2001-08-08
申请号：EP99951788.1
申请日：1999-10-05
申请人： E.I. DU PONT DE NEMOURS AND COMPANY
发明人： WANG, Ying
IPC分类号： G03F7/027 , G03F7/004 , G03C9/08
CPC分类号： G03F7/027 , B33Y70/00 , G03F7/0037 , G03F7/038 , Y10S430/106 , Y10S430/107 , Y10S430/108 , Y10S430/11 , Y10S430/111 , Y10S430/143 , Y10S430/146 , Y10S430/154 , Y10S430/167 , Y10S430/168
摘要： This invention discloses compositions that can be polymerized/crosslinked imagewise upon exposure to ionization radiation such as x-ray, electron beam, ion beam, and gamma-ray. This invention also discloses methods of use for these compositions for microfabrication of ceramics, for stereolithography, and for x-ray, e-beam, and ion-beam lithography which can be used for photoresists.
摘要翻译：本发明公开了可以在暴露于诸如x射线，电子束，离子束和γ射线之类的电离辐射的情况下成像聚合/交联的组合物。本发明还公开了用于陶瓷微制造，立体光刻和用于光致抗蚀剂的x射线，电子束和离子束光刻的这些组合物的使用方法。

3. 发明授权

US06916598B2 Ionization radiation imageable photopolymer compositions 失效
标题翻译：电离辐射可成像光聚合物组合物
公开(公告)号：US06916598B2
公开(公告)日：2005-07-12
申请号：US10394060
申请日：2003-03-21
申请人： Ying Wang
发明人： Ying Wang
IPC分类号： C08F2/54 , G03F7/00 , G03F7/004 , G03F7/027 , G03F7/038 , G03C1/725 , G03C1/73 , G03F7/032 , G03F7/30
CPC分类号： G03F7/027 , B33Y70/00 , G03F7/0037 , G03F7/038 , Y10S430/106 , Y10S430/107 , Y10S430/108 , Y10S430/11 , Y10S430/111 , Y10S430/143 , Y10S430/146 , Y10S430/154 , Y10S430/167 , Y10S430/168
摘要： This invention discloses compositions that can be polymerized/crosslinked imagewise upon exposure to ionization radiation such as x-ray, electron beam, ion beam, and gamma-ray. This invention also discloses methods of use for these compositions for microfabrication of ceramics, for stereolithography, and for x-ray, e-beam, and ion-beam lithography which can be used for photoresists.
摘要翻译：本发明公开了可以在暴露于诸如x射线，电子束，离子束和γ射线之类的电离辐射的情况下成像聚合/交联的组合物。本发明还公开了用于陶瓷微制造，立体光刻和用于光致抗蚀剂的x射线，电子束和离子束光刻的这些组合物的使用方法。

4. 发明授权

US4147564A Method of controlled surface texturization of crystalline semiconductor material 失效
标题翻译：晶体半导体材料的受控表面纹理化方法
公开(公告)号：US4147564A
公开(公告)日：1979-04-03
申请号：US852786
申请日：1977-11-18
申请人： Thomas J. Magee , Richard R. Pettijohn , Shelley A. Stewart , Malcolm Thackray
发明人： Thomas J. Magee , Richard R. Pettijohn , Shelley A. Stewart , Malcolm Thackray
IPC分类号： H01L31/04 , H01L21/263 , H01L21/306 , H01L31/0236
CPC分类号： H01L21/263 , H01L21/30608 , H01L31/0236 , Y02E10/547 , Y10S148/061 , Y10S430/154
摘要： A method of forming a microscopically texturized surface on a crystalline semiconductor material is disclosed which method includes the use of a radioactive source for uniformly irradiating the surface. The radioactive source includes a plane surface having a uniform distribution of radioactive material thereon In one arrangement the radioactive source surface area is at least the size of the polished crystalline semiconductor surface to be texturized, and the radioactive source is positioned closely adjacent the polished surface for a predetermined time period for uniform irradiation of the same. If desired, the radioactive source and crystalline surface may be relatively movable during irradiation of the surface, in which case the source may be in the form of an elongated strip of sufficient length to extend beyond opposite edges of the polished surface area to be texturized. In any case, the large-surface area radioactive source produces substantially uniform distribution of damage tracks in the crystalline surface, which surface then is anisotropically etched by use of a suitable etching solution. The damage tracks provide etching sites along which etching proceeds at a greater rate than in the undamaged area. Generally the surface to be texturized comprises the (100) orientation surface of a crystalline semiconductor material, such as silicon, at which surface etching preferentially proceeds for exposure of the (111) planes which intersect the surface with fourfold symmetry. With this method a controllable size distribution of tetrahedra may be formed over a large surface.
摘要翻译：公开了一种在结晶半导体材料上形成微观结构化表面的方法，该方法包括使用放射源来均匀地照射该表面。放射源包括具有均匀分布的放射性材料的平面。在一种布置中，放射源表面积至少要被抛光的晶体半导体表面的尺寸，以被组织化，放射源位于抛光表面附近用于均匀照射的预定时间段。如果需要，放射源和晶体表面可在照射表面期间相对移动，在这种情况下，源可以是具有足够长度的细长条形，以延伸超过被抛光表面区域的相对边缘以进行纹理化。在任何情况下，大面积放射源在结晶表面产生损伤轨迹的基本上均匀的分布，然后通过使用合适的蚀刻溶液各向异性蚀刻该表面。损伤轨迹提供蚀刻位置，蚀刻以比未损伤区域更大的速率进行。通常，待纹理化的表面包括晶体半导体材料（例如硅）的（100）取向表面，在该表面处，表面蚀刻优先进行以暴露与四面对称的表面的（111）面。利用该方法，可以在大的表面上形成四面体的可控尺寸分布。

5. 发明授权

US2316595A Photographic plate or film for the investigation of bodies or substances by means of neutrons 失效
标题翻译：通过中子调查身体或物质的摄影板或胶片
公开(公告)号：US2316595A
公开(公告)日：1943-04-13
申请号：US26230639
申请日：1939-03-16
申请人： ISRAEL KALLMANN HARTMUT , ERNST KUBN , JOHN EGGERT
发明人： ISRAEL KALLMANN HARTMUT , ERNST KUBN , JOHN EGGERT
IPC分类号： G03C1/06
CPC分类号： G03C1/06 , Y10S430/154

6. 发明申请

WO0020926A9 IONIZATION RADIATION IMAGEABLE PHOTOPOLYMER COMPOSITIONS 审中-公开
标题翻译：离子可辐射成像光刻胶组合物
公开(公告)号：WO0020926A9
公开(公告)日：2000-09-14
申请号：PCT/US9923195
申请日：1999-10-05
申请人： DU PONT
发明人： WANG YING
IPC分类号： C08F2/54 , G03F7/00 , G03F7/004 , G03F7/027 , G03F7/038 , G03C9/08
CPC分类号： G03F7/027 , B33Y70/00 , G03F7/0037 , G03F7/038 , Y10S430/106 , Y10S430/107 , Y10S430/108 , Y10S430/11 , Y10S430/111 , Y10S430/143 , Y10S430/146 , Y10S430/154 , Y10S430/167 , Y10S430/168
摘要： This invention discloses compositions that can be polymerized/crosslinked imagewise upon exposure to ionization radiation such as x-ray, electron beam, ion beam, and gamma-ray. This invention also discloses methods of use for these compositions for microfabrication of ceramics, for stereolithography, and for x-ray, e-beam, and ion-beam lithography which can be used for photoresists.
摘要翻译：本发明公开了可以在暴露于诸如x射线，电子束，离子束和γ射线之类的电离辐射的情况下成像聚合/交联的组合物。本发明还公开了用于陶瓷微制造，立体光刻和用于光致抗蚀剂的x射线，电子束和离子束光刻的这些组合物的使用方法。

7. 发明授权

US4085331A Sources of nuclear radiation 失效
标题翻译：核辐射源
公开(公告)号：US4085331A
公开(公告)日：1978-04-18
申请号：US727118
申请日：1976-09-27
申请人： Malcolm Thackray
发明人： Malcolm Thackray
IPC分类号： G21G4/06 , G21G4/04
CPC分类号： G21G4/06 , Y10S430/143 , Y10S430/154
摘要： A uniform source of nuclear radiation is produced by converting a convertible surface portion of a body. The conversion can be by chemical combination or reaction, neutron bombardment, ion exchange of an element present in the convertible material with a solution of radio-active ions of the element or by permitting the radio active particles to be embodied into the surface portion. A preferred embodiment utilises conventional photographic film in which the silver halide grains are treated chemically with a radio-active material.
摘要翻译：通过转换身体的可转换表面部分来产生统一的核辐射源。转化可以通过化学组合或反应，中子轰击，可转换材料中存在的元素与元素的放射性活性离子的溶液的离子交换，或通过允许放射性活性粒子体现在表面部分中。优选的实施方案使用其中卤化银颗粒用放射性活性材料化学处理的常规照相胶片。

8. 发明授权

US3887807A Elements and process for recording direct image neutron radiographs 失效
标题翻译：记录直接图像中子射线照片的要素和过程
公开(公告)号：US3887807A
公开(公告)日：1975-06-03
申请号：US38110673
申请日：1973-07-20
申请人： EASTMAN KODAK CO
发明人： POIGNANT JR ROBERT V , PRZYBYLOWICZ EDWIN P
IPC分类号： G01N23/05 , G01T3/00
CPC分类号： G01N23/05 , G01T3/00 , Y10S430/154
摘要： An element is provided for recording a direct image neutron radiograph, thus eliminating the need for a transfer step (i.e. the use of a transfer screen). The element is capable of holding an electrostatic charge and comprises a first layer for absorbing neutrons and generating a current by dissipation of said electrostatic charge in proportion to the number of neutrons absorbed, and a second layer for conducting the current generated by the absorbed neutrons, said neutron absorbing layer comprising an insulative layer comprising neutron absorbing agents in a concentration of at least 1017 atoms per cubic centimeter. An element for enhancing the effect of the neutron beam by utilizing the secondary emanations of neutron absorbing materials is also disclosed along with a process for using said device.
摘要翻译：提供用于记录直接图像中子射线照片的元件，因此不需要转印步骤（即使用转印屏幕）。该元件能够保持静电电荷，并且包括用于吸收中子的第一层，并且通过与所吸收的中子的数量成比例地散发所述静电电荷而产生电流，以及用于传导被吸收的中子产生的电流的第二层，所述中子吸收层包括绝缘层，所述绝缘层包含浓度至少为1017原子/立方厘米的中子吸收剂。还通过利用中子吸收材料的二次发射来增强中子束的影响的元件以及使用所述装置的方法。

9. 发明授权

US3457408A Track-etch neutron radiography 失效
标题翻译：轨迹中子辐射
公开(公告)号：US3457408A
公开(公告)日：1969-07-22
申请号：US3457408D
申请日：1966-12-12
申请人： GEN ELECTRIC
发明人： ALTER HENRY WARD
IPC分类号： G01N23/09 , G01T5/10 , G01T3/00
CPC分类号： G01T5/10 , G01N23/09 , Y10S430/154

10. 发明授权

US3359419A Radiographic nondestructive testing method 失效
标题翻译：射线照相无损检测方法
公开(公告)号：US3359419A
公开(公告)日：1967-12-19
申请号：US49359865
申请日：1965-10-06
申请人： JACOB KASTNER , HAROLD BERGER
发明人： JACOB KASTNER , HAROLD BERGER
IPC分类号： G01N23/09
CPC分类号： G01N23/09 , Y10S430/154

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