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1. 发明授权

US06825596B1 Electron emitters with dopant gradient 失效
标题翻译：具有掺杂剂梯度的电子发射体
公开(公告)号：US06825596B1
公开(公告)日：2004-11-30
申请号：US08609354
申请日：1996-03-01
申请人： David A. Cathey
发明人： David A. Cathey
IPC分类号： H01J116
CPC分类号： H01J1/3044 , H01J1/3042 , H01J9/025 , H01J2201/30403 , Y10S148/116 , Y10S148/172 , Y10S438/978
摘要： Electron emitters and a method of fabricating emitters which have a concentration gradient of impurities, such that the highest concentration of impurities is at the apex of the emitters, and decreases toward the base of the emitters. The method comprises the steps of doping, patterning, etching, and oxidizing the substrate, thereby forming the emitters having impurity gradients.
摘要翻译：电子发射体和制造具有杂质浓度梯度的发射体的方法，使得最高浓度的杂质位于发射体的顶点，朝向发射体的基底减小。该方法包括掺杂，图案化，蚀刻和氧化衬底的步骤，从而形成具有杂质梯度的发射体。

2. 发明授权

EP0139366B1 Method of manufacturing a soldi-state image pickup device 失效
标题翻译：制造状态图像拾取器件的方法
公开(公告)号：EP0139366B1
公开(公告)日：1988-10-12
申请号：EP84305337.2
申请日：1984-08-06
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Harada, Nozomu Patent Division Toshiba Corp. , Komatsubara, Yoshiaki Patent Division
IPC分类号： H01L21/90 , H01L27/14
CPC分类号： H01L27/14893 , H01L27/14806 , Y10S148/075 , Y10S148/172

3. 发明公开

EP0139366A1 Method of manufacturing a soldi-state image pickup device 失效
标题翻译： Verfahren zum Herstellen einerFestkörper-Bildaufnahmevorrichtung。
公开(公告)号：EP0139366A1
公开(公告)日：1985-05-02
申请号：EP84305337.2
申请日：1984-08-06
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Harada, Nozomu Patent Division Toshiba Corp. , Komatsubara, Yoshiaki Patent Division
IPC分类号： H01L21/90 , H01L27/14
CPC分类号： H01L27/14893 , H01L27/14806 , Y10S148/075 , Y10S148/172
摘要： When a "two-level" solid state image pickup device is manufactured, part of a first metallic electrode (28a) electrically connected to a signal storage region (24b) is made to project to the highest position above a substrate on which it is formed. A coating of an organic insulating film (29) is then applied to produce a flat surface. The entire surface of the organic film is then etched to expose the projections (A) of the first metallic electrode (28a) and a second metallic electrode (28b) constituting a pixel electrode is connected to the first electrode (28a) at the exposed portion thereof.
摘要翻译：当制造“两级”固态图像拾取装置时，使与电信号存储区（24b）电连接的第一金属电极（28a）的一部分突出到其形成的基板上方的最高位置。然后施加有机绝缘膜（29）的涂层以产生平坦表面。然后蚀刻有机膜的整个表面以暴露第一金属电极（28a）的突起（A），并且构成像素电极的第二金属电极（28b）在暴露部分处连接到第一电极（28a）它们。

4. 发明授权

US5455196A Method of forming an array of electron emitters 失效
标题翻译：形成电子发射体阵列的方法
公开(公告)号：US5455196A
公开(公告)日：1995-10-03
申请号：US214926
申请日：1994-03-17
申请人： Gary A. Frazier
发明人： Gary A. Frazier
IPC分类号： H01J1/304 , H01J9/02 , H01J29/04 , H01J31/20 , H01L21/465
CPC分类号： H01J29/04 , H01J1/3042 , H01J31/203 , H01J9/025 , H01J2201/319 , Y10S148/172
摘要： A method of forming an array of electron field emitters at a face of a semiconductor layer is disclosed. The method includes the steps of: providing a semiconductor workpiece having a plurality of field emitter sites on a face thereof; for each site, forming a conductive column having a base coupled to the site and an upstanding end opposed to the base; for each conductive column, forming a metallic column on the upstanding end of the conductive column; depositing an electrically conductive polymer layer over the workpiece; etching the electrically conductive polymer layer to selectively expose the metallic columns; placing the workpiece in an electrolytic etchant solution capable of etching the metallic columns; applying an electric potential between the conductive polymer layer and an anode electrode in the etchant to etch the metallic columns into a respective plurality of sharp emitter tips; and removing the conductive polymer layer. Where the metallic column is tungsten, an aqueous solution of potassium hydroxide is disclosed as an etchant. Where the metallic column is a platinum-iridium alloy, an aqueous solution of calcium chloride and hydrochloric acid is disclosed as an etchant.
摘要翻译：公开了一种在半导体层的表面形成电子场发射体阵列的方法。该方法包括以下步骤：提供在其表面上具有多个场发射器位置的半导体工件; 形成一个导电柱，该导电柱具有连接到该位置的底座和一个与底座相对的直立端; 对于每个导电柱，在导电柱的直立端上形成金属柱; 在工件上沉积导电聚合物层; 蚀刻导电聚合物层以选择性地暴露金属柱; 将工件放置在能够蚀刻金属柱的电解蚀刻溶液中; 在蚀刻剂中的导电聚合物层和阳极电极之间施加电势，以将金属柱蚀刻成相应的多个尖锐的发射极尖端; 并除去导电聚合物层。当金属柱是钨时，公开了氢氧化钾的水溶液作为蚀刻剂。当金属柱是铂 - 铱合金时，公开了氯化钙和盐酸的水溶液作为蚀刻剂。

5. 发明授权

US5318918A Method of making an array of electron emitters 失效
标题翻译：制造电子发射体阵列的方法
公开(公告)号：US5318918A
公开(公告)日：1994-06-07
申请号：US814960
申请日：1991-12-31
申请人： Gary A. Frazier
发明人： Gary A. Frazier
IPC分类号： H01J1/304 , H01J9/02 , H01J29/04 , H01J31/20 , H01L21/335 , H01L21/283
CPC分类号： H01J29/04 , H01J1/3042 , H01J31/203 , H01J9/025 , H01J2201/319 , Y10S148/172
摘要： This is a method of forming an array of electron emitters at the face of a semiconductor layer. The method comprises the steps of depositing a layer of polycrystalline silicon on a face of a semiconductor workpiece; doping the polycrystalline silicon layer to render the polycrystalline silicon layer conductive; and for each of a plurality of emitter cells, performing an orientation-dependent polycrystalline silicon etch to define a pyramid for the cell having a base affixed to the workpiece and an upstanding tip opposed to the base. Preferably the method also includes the steps of forming a field effect transistor at the face of the workpiece prior to the depositing of the layer, with the pyramid having a base in conductive contact with the drain of the transistor. The polycrystalline silicon layer may be doped in situ after deposition.
摘要翻译：这是在半导体层的表面形成电子发射体阵列的方法。该方法包括以下步骤：在半导体工件的表面上沉积多晶硅层; 掺杂多晶硅层以使多晶硅层导电; 并且对于多个发射极单元中的每一个，执行取向相关多晶硅蚀刻以限定用于具有固定到工件的基部的单元和与基座相对的直立尖端的金字塔。优选地，该方法还包括以下步骤：在沉积层之前在工件的表面处形成场效应晶体管，金字塔具有与晶体管的漏极导电接触的基极。多晶硅层可以沉积后原位掺杂。

6. 发明授权

US3895430A Method for reducing blooming in semiconductor array targets 失效
标题翻译：用于减少半导体阵列靶中的起霜的方法
公开(公告)号：US3895430A
公开(公告)日：1975-07-22
申请号：US39892873
申请日：1973-09-20
申请人： GEN ELECTRIC
发明人： WILSON RONALD H , GIBBONS MARTIN D , BLUMENFELD SAMUEL M
IPC分类号： H01J29/45 , H01L21/00 , H01L27/00 , B01J17/00
CPC分类号： H01L21/00 , H01J9/233 , H01J29/455 , H01L27/00 , Y10S148/003 , Y10S148/122 , Y10S148/172
摘要： Highlight blooming is reduced in semiconductor diode array camera targets by forming electron-hole recombination sites intermediate the diodes. These sites collect excess holes created by intense light images incident on the target and reduce blooming. The recombination sites are formed by selectively irradiating regions of the semiconductor substrate between the diodes and beyond the limits of the depletion region surrounding the reverse-biased diodes. Useful forms of radiation which produce these recombination sites include electron beam and ultraviolet rays.
摘要翻译：通过在二极管之间形成电子 - 空穴复合位点，在半导体二极管阵列相机目标中突出显现起霜。这些网站收集了由激光照射到目标上造成的多余的洞，并减少了起霜。通过在二极管之间选择性地照射半导体衬底的区域并超出围绕反向偏置二极管的耗尽区的极限来形成复合位点。产生这些重组位点的有用的辐射形式包括电子束和紫外线。

7. 发明申请

US20070052339A1 Electron emitters with dopant gradient 审中-公开
标题翻译：具有掺杂剂梯度的电子发射体
公开(公告)号：US20070052339A1
公开(公告)日：2007-03-08
申请号：US11591067
申请日：2006-11-01
申请人： David Cathey
发明人： David Cathey
IPC分类号： H01J9/02 , H01J1/02
CPC分类号： H01J1/3044 , H01J1/3042 , H01J9/025 , H01J2201/30403 , Y10S148/116 , Y10S148/172 , Y10S438/978
摘要： Electron emitters and a method of fabricating emitters are disclosed, having a concentration gradient of impurities, such that the highest concentration of impurities is at the apex of the emitter tips and decreases toward the base of the emitter tips. The method comprises the steps of doping, patterning, etching, and oxidizing the substrate, thereby forming the emitter tips having impurity gradients.
摘要翻译：公开了电子发射器和制造发射体的方法，其具有杂质的浓度梯度，使得最高浓度的杂质位于发射极尖端的顶点处并朝向发射极尖端的基极减小。该方法包括掺杂，图案化，蚀刻和氧化衬底的步骤，从而形成具有杂质梯度的发射极尖端。

8. 发明申请

US20020093281A1 Electron emitters and method for forming them 失效
标题翻译：电子发射体及其形成方法
公开(公告)号：US20020093281A1
公开(公告)日：2002-07-18
申请号：US09759746
申请日：2001-01-12
发明人： David A. Cathey
IPC分类号： H01J001/16 , H01J019/10
CPC分类号： H01J1/3044 , H01J1/3042 , H01J9/025 , H01J2201/30403 , Y10S148/116 , Y10S148/172 , Y10S438/978
摘要： Electron emitters and a method of fabricating emitters which have a concentration gradient of impurities, such that the highest concentration of impurities is at the apex of the emitters, and decreases toward the base of the emitters. The method comprises the steps of doping, patterning, etching, and oxidizing the substrate, thereby forming the emitters having impurity gradients.
摘要翻译：电子发射体和制造具有杂质浓度梯度的发射体的方法，使得最高浓度的杂质位于发射体的顶点，朝向发射体的基底减小。该方法包括掺杂，图案化，蚀刻和氧化衬底的步骤，从而形成具有杂质梯度的发射体。

9. 发明授权

US6049089A Electron emitters and method for forming them 失效
公开(公告)号：US6049089A
公开(公告)日：2000-04-11
申请号：US161338
申请日：1998-09-25
申请人： David A. Cathey
发明人： David A. Cathey
IPC分类号： H01J1/304 , H01J9/02 , H01J9/04
CPC分类号： H01J1/3044 , H01J1/3042 , H01J9/025 , H01J2201/30403 , Y10S148/116 , Y10S148/172 , Y10S438/978
摘要： Electron emitters and a method of fabricating emitters which have a concentration gradient of impurities, such that the highest concentration of impurities is at the apex of the emitters, and decreases toward the base of the emitters. The method comprises the steps of doping, patterning, etching, and oxidizing the substrate, thereby forming the emitters having impurity gradients.

10. 发明授权

US07064476B2 Emitter 失效
标题翻译：发射器
公开(公告)号：US07064476B2
公开(公告)日：2006-06-20
申请号：US09759746
申请日：2001-01-12
申请人： David A. Cathey
发明人： David A. Cathey
IPC分类号： H01J1/14
CPC分类号： H01J1/3044 , H01J1/3042 , H01J9/025 , H01J2201/30403 , Y10S148/116 , Y10S148/172 , Y10S438/978
摘要： Electron emitters and a method of fabricating emitters are disclosed, having a concentration gradient of impurities, such that the highest concentration of impurities is at the apex of the emitters and decreases toward the base of the emitters. The method comprises the steps of doping, patterning, etching, and oxidizing the substrate, thereby forming the emitters having impurity gradients.
摘要翻译：公开了电子发射器和制造发射体的方法，其具有杂质的浓度梯度，使得最高浓度的杂质位于发射体的顶点并朝向发射体的基底减小。该方法包括掺杂，图案化，蚀刻和氧化衬底的步骤，从而形成具有杂质梯度的发射体。

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