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    • 1. 发明授权
    • Monolithic integrable R-2R network
    • 单片可积分R-2R网络
    • US4381499A
    • 1983-04-26
    • US318887
    • 1981-11-06
    • Holger Struthoff
    • Holger Struthoff
    • H03M1/78H03M1/00H03K13/02
    • H03M1/00H03M2201/02H03M2201/3115H03M2201/3131H03M2201/3136H03M2201/3168H03M2201/4135H03M2201/4225H03M2201/4233H03M2201/4262H03M2201/814H03M2201/931
    • A monolithic integrable R-2R resistor network comprises a number of series resistors connected to a terminal resistor; and a plurality of 2R resistor units each capable of being switched by two electronic switches either to ground or to another reference point, a different plurality of 2R resistor units being coupled to the nodes between each of the series resistors, to the node between the terminal resistor and the last resistor of the series resistors and to the node ahead of the first resistor of the series resistors. To compensate for the effects of the variations of the switch resistances caused during manufacture by process parameter fluctuations upon the accuracy of a D/A converter, a switch structure is inserted at each of the nodes which, with respect to the two electronic switches, is of the same kind, and which is permanently in an electrically conducting state. Preferably, there are used insulated-gate field-effect transistors and insulated-gate field-effect transistor structures, the identical electrodes of which, for example, the source electrodes, are directly connected to each of the nodes.
    • 单片可积分R-2R电阻网络包括连接到端子电阻器的多个串联电阻器; 以及多个2R电阻单元,每个能够被两个电子开关切换到接地或另一个参考点,不同的多个2R电阻单元耦合到每个串联电阻之间的节点到端子之间的节点 电阻器和串联电阻器的最后一个电阻器,并连接到串联电阻器的第一个电阻器前面的节点。 为了补偿由于工艺参数波动而产生的开关电阻的变化对D / A转换器的精度的影响,在每个节点处插入开关结构,相对于两个电子开关 并且永久地处于导电状态。 优选地,使用绝缘栅场效应晶体管和绝缘栅场效应晶体管结构,其相同的电极例如源电极直接连接到每个节点。
    • 5. 发明授权
    • 이중 출력용 폴디드 저항열 디지털 아날로그 변환기
    • KR101879331B1
    • 2018-07-18
    • KR1020170029313
    • 2017-03-08
    • 충북대학교 산학협력단
    • 양병도김태우우기찬황선광김미정
    • H03M1/78
    • H03M1/785H03M2201/3168H03M2201/814
    • 본발명은이중출력용폴디드저항열디지털아날로그변환기에관한것으로서, 동일한저항값을갖는 2개의저항들이제1기준전압(V)과제2기준전압(V) 사이에직렬연결되어있는저항열(R)과, N/2의상위비트를출력하는워드라인디코더(Word line decoder)와, N/2의하위비트를출력하는비트라인디코더(Bit line decoder)와, 워드라인디코더의상위비트에대응하는각 출력단에접속되어스위칭되며, 저항열의해당전압값(V)을출력하는 2개의워드라인스위치(WL-S)와, 비트라인디코더의하위비트에대응하는각 출력단에접속되어스위칭되며, 하위비트에대응하는해당전압값(V)을출력하는 N 개의비트라인스위치(BL-S)와, 워드라인디코더의상위비트에대응하는각 출력단에접속되어스위칭되며, 각라인간이웃전압값(V)을출력하는 N 개의워드라인더미스위치(WL-DS)와, 비트라인디코더의하위비트에대응하는각 출력단에접속되어스위칭되며, 하위비트에대응하는해당이웃전압값(V)을전달하는 N 개의비트라인더미스위치(BL-DS)와, 비트라인스위치(BL-S) 및비트라인더미스위치(BL-DS)가일측단자가접속되고, 자신의출력단이타측단자에접속되는출력버퍼(Output buffer)를포함한다. 본발명에따르면, 고해상도를구현하면서도 R-DAC의스위치개수를최소화함으로써, R-DAC의칩 면적을감소시킬수 있다. 데이터구동부(Data Driver) IC칩면적에대부분은 R-DAC가차지하고있으므로, R-DAC의면적을줄임으로써데이터구동부 IC칩의크기감소및 원가절감을달성할수 있다. 또한, 스위치의수가줄어들면스위치가가지고있는기생저항, 캐패시터가감소해 R-DAC 동작속도가빨라져고속처리가가능하게된다.