专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2011050336A3 SEMICONDUCTOR DEVICES HAVING AN ENHANCED ABSORPTION REGION AND ASSOCIATED METHODS 审中-公开
公开(公告)号：WO2011050336A3
公开(公告)日：2011-04-28
申请号：PCT/US2010/053867
申请日：2010-10-22
申请人： SIONYX, INC. , CAREY, James , SICKLER, Jason
发明人： CAREY, James , SICKLER, Jason
IPC分类号： H01L31/101
摘要： Photosensitive semiconductor devices and associated methods are provided. In one aspect, for example, a photosensitive semiconductor device can include an electromagnetic radiation absorption layer having a thickness of less than or equal to about 200 µm, wherein the electromagnetic radiation absorption layer includes a semiconductor material and an enhanced absorption region. The electromagnetic radiation absorption layer is operable to absorb greater than or equal to about 40% of incident electromagnetic radiation having at least one wavelength greater than or equal to about 1064 nm.

2. 发明申请

WO2010127298A3 LOW OXYGEN CONTENT SEMICONDUCTOR MATERIAL FOR SURFACE ENHANCED PHOTONIC DEVICES ASSOCIATED METHODS 审中-公开
标题翻译：表面增强光电器件的低氧含量半导体材料相关方法
公开(公告)号：WO2010127298A3
公开(公告)日：2011-02-24
申请号：PCT/US2010033253
申请日：2010-04-30
申请人： SIONYX INC , CAREY JAMES , LI XIA , ALIE SUSAN , PRALLE MARTIN U
发明人： CAREY JAMES , LI XIA , ALIE SUSAN , PRALLE MARTIN U
IPC分类号： H01L31/101 , H01L21/265 , H01L21/324 , H01L31/18
CPC分类号： H01L21/268 , H01L21/223 , H01L21/324 , H01L31/0256 , H01L31/101 , H01L31/18
摘要： Radiation-absorbing semiconductor devices and associated methods of making and using are provided. In one aspect, for example, a method for making a radiation- absorbing semiconductor device having enhanced photoresponse can include forming an active region on a surface of a low oxygen content semiconductor, and annealing the low oxygen content semiconductor to a temperature of from about 300° C to about 1100° C, wherein the forming of the active region and the annealing of the low oxygen content semiconductor are performed in a substantially oxygen-depleted environment.
摘要翻译：提供了辐射吸收半导体器件及相关的制造和使用方法。一方面，例如，制造具有增强的光响应的辐射吸收半导体器件的方法可以包括在低氧含量半导体的表面上形成有源区，并将低氧含量半导体退火至约300 ℃至约1100℃，其中活性区域的形成和低氧含量半导体的退火在基本上耗氧的环境中进行。

3. 发明申请

WO2010071638A1 METHOD AND APPARATUS FOR LASER-PROCESSING A SEMICONDUCTOR PHOTOVOLTAIC APPARATUS 审中-公开
标题翻译：用于激光加工半导体光电装置的方法和装置
公开(公告)号：WO2010071638A1
公开(公告)日：2010-06-24
申请号：PCT/US2008/087091
申请日：2008-12-17
申请人： SIONYX, INC. , CAREY, James , PRALLE, Martin
发明人： CAREY, James , PRALLE, Martin
IPC分类号： H01L31/18 , H01L21/268
CPC分类号： H01L31/186 , H01L21/268 , Y02E10/50 , Y02P70/521
摘要： The present disclosure is directed to a method for automated manufacturing thin film solar cells including a laser processed layer. The method includes depositing a plurality of substantially planar layers in proximity with one another, including at least a first semiconductor layer, feeding the plurality of layers through a plurality of processing steps, irradiating at least a portion of a layer of the plurality of layers with a source of laser radiation, and using a control computer to control at least one of the acts of feeding and irradiating in the automated manufacture of the thin film solar cells.
摘要翻译：本公开涉及一种用于自动化制造包括激光加工层的薄膜太阳能电池的方法。该方法包括沉积彼此邻近的多个基本平坦的层，包括至少第一半导体层，通过多个处理步骤馈送多个层，将多层的至少一部分层与激光辐射源，以及使用控制计算机来控制在薄膜太阳能电池的自动化制造中进给和照射的动作中的至少一个。

4. 发明专利

TW201501277A 淺溝槽紋理化區域及相關方法审中-公开
简体标题：浅沟槽纹理化区域及相关方法
公开(公告)号：TW201501277A
公开(公告)日：2015-01-01
申请号：TW102142822
申请日：2013-11-25
申请人：矽安尼克斯股份有限公司 , SIONYX, INC.
发明人：哈達赫梅恩 , HADDAD, HOMAYOON , 蔣巨濤 , JIANG, JUTAO
IPC分类号： H01L27/14 , H01L21/762
CPC分类号： H01L27/14643 , H01L27/14625 , H01L27/14629 , H01L27/1463 , H01L27/14632 , H01L27/1464 , H01L27/14689 , H01L31/02327 , H01L31/028 , H01L31/182
摘要：本發明提供了光敏裝置及相關聯的方法。例如，在一觀點中，一光敏成像器裝置可包含：一半導體層，該半導體層具有形成至少一接面之多個摻雜區；以及被耦合到該半導體層之一紋理化區，該紋理化區定位成與電磁輻射交互作用。自一系列的淺溝槽隔離特徵形成該紋理化區。
简体摘要：本发明提供了光敏设备及相关联的方法。例如，在一观点中，一光敏成像器设备可包含：一半导体层，该半导体层具有形成至少一接面之多个掺杂区；以及被耦合到该半导体层之一纹理化区，该纹理化区定位成与电磁辐射交互作用。自一系列的浅沟槽隔离特征形成该纹理化区。

5. 发明专利

TW201502463A 利用堆疊的成像器裝置及關聯的方法之三維成像审中-公开
简体标题：利用堆栈的成像器设备及关联的方法之三维成像
公开(公告)号：TW201502463A
公开(公告)日：2015-01-16
申请号：TW103109579
申请日：2014-03-14
申请人：矽安尼克斯股份有限公司 , SIONYX, INC.
发明人：哈達赫梅恩 , HADDAD, HOMAYOON , 馮琛 , FENG, CHEN , 弗貝斯雷歐納德 , FORBES, LEONARD
IPC分类号： G01B11/02 , H04N13/02
CPC分类号： G01B11/026 , G06T7/571 , G06T2207/10148 , H01L27/1464 , H04N13/236 , H04N13/271
摘要：本發明提供能判定距離而產生主體的三維表現的堆疊成像器裝置，及其關聯的方法。在一態樣中，成像器系統可包括具有第一入射光表面的第一成像器陣列以及具有第二入射光表面的一第二成像器陣列。第二成像器陣列可在對向於第一入射光表面的表面而耦合到第一成像器陣列，伴隨第二入射光表面朝向第一成像器陣列，並至少實質均勻地相距。系統亦可包括系統透鏡，經定位而沿光學路徑將入射光引導上至第一入射光表面。第一成像器陣列為可操作以偵測出沿著光學路徑而通過之光的第一部分，並使該光的第二部分通過，其中第二成像器陣列為可操作以偵測出光的第二部分的至少一部分。
简体摘要：本发明提供能判定距离而产生主体的三维表现的堆栈成像器设备，及其关联的方法。在一态样中，成像器系统可包括具有第一入射光表面的第一成像器数组以及具有第二入射光表面的一第二成像器数组。第二成像器数组可在对向于第一入射光表面的表面而耦合到第一成像器数组，伴随第二入射光表面朝向第一成像器数组，并至少实质均匀地相距。系统亦可包括系统透镜，经定位而沿光学路径将入射光引导上至第一入射光表面。第一成像器数组为可操作以侦测出沿着光学路径而通过之光的第一部分，并使该光的第二部分通过，其中第二成像器数组为可操作以侦测出光的第二部分的至少一部分。

6. 发明申请

WO2014151093A1 THREE DIMENSIONAL IMAGING UTILIZING STACKED IMAGER DEVICES AND ASSOCIATED METHODS 审中-公开
标题翻译：使用堆叠成像设备和相关方法的三维成像
公开(公告)号：WO2014151093A1
公开(公告)日：2014-09-25
申请号：PCT/US2014/024964
申请日：2014-03-12
申请人： SIONYX, INC. , HADDAD, Homayoon , FENG, Chen , FORBES, Leonard
发明人： HADDAD, Homayoon , FENG, Chen , FORBES, Leonard
IPC分类号： H04N13/02 , H04N13/00
CPC分类号： G01B11/026 , G06T7/557 , G06T7/571 , G06T2207/10148 , H04N13/236 , H04N13/271
摘要： Stacked imager devices that can determine distance and generate three dimensional representations of a subject and associated methods are provided. In one aspect, an imaging system can include a first imager array having a first light incident surface and a second imager array having a second light incident surface. The second imager array can be coupled to the first imager array at a surface that is opposite the first light incident surface, with the second light incident surface being oriented toward the first imager array and at least substantially uniformly spaced.
摘要翻译：提供了可以确定距离并生成主体的三维表示和相关方法的堆叠成像器设备。一方面，成像系统可以包括具有第一光入射表面的第一成像器阵列和具有第二光入射表面的第二成像器阵列。第二成像器阵列可以在与第一光入射表面相对的表面处耦合到第一成像器阵列，其中第二光入射表面朝向第一成像器阵列并且至少基本均匀地间隔开。

7. 发明申请

WO2013056249A1 THREE DIMENSIONAL ARCHITECTURE SEMICONDUCTOR DEVICES AND ASSOCIATED METHODS 审中-公开
标题翻译：三维建筑半导体器件及相关方法
公开(公告)号：WO2013056249A1
公开(公告)日：2013-04-18
申请号：PCT/US2012/060291
申请日：2012-10-15
申请人： SIONYX, INC. , HADDAD, Homayoon , FORBES, Leonard
发明人： HADDAD, Homayoon , FORBES, Leonard
IPC分类号： H01L27/146 , H01L27/14
CPC分类号： G01J5/10 , G01J5/20 , H01L27/14649 , H01L27/1469
摘要： Semiconductor devices having three dimensional (3D) architectures and methods form making such devices are provided. In one aspect, for example, a method for making a semiconductor device can include forming a device layer on a front side of a semiconductor layer that is substantially defect free, bonding a carrier substrate to the device layer, processing the semiconductor layer on a back side opposite the device layer to form a processed surface, and bonding a smart substrate to the processed surface. In some aspects, the method can also include removing the carrier substrate from the semiconductor layer to expose the device layer.
摘要翻译：提供具有三维（3D）架构和形成这种装置的方法的半导体器件。一方面，例如，制造半导体器件的方法可以包括在基本上无缺陷的半导体层的正面上形成器件层，将载体衬底接合到器件层，在后面处理半导体层一侧与器件层相对以形成加工表面，并将智能衬底接合到经处理的表面。在一些方面，该方法还可以包括从半导体层去除载体衬底以暴露器件层。

8. 发明申请

WO2012088338A3 PHOTODETECTING IMAGER DEVICES HAVING CORRELATED DOUBLE SAMPLING AND ASSOCIATED METHODS 审中-公开
公开(公告)号：WO2012088338A3
公开(公告)日：2012-06-28
申请号：PCT/US2011/066626
申请日：2011-12-21
申请人： SIONYX, INC. , MCKEE, Jeffrey , JIANG, Jutao
发明人： MCKEE, Jeffrey , JIANG, Jutao
IPC分类号： H01L27/14 , H01L27/146 , H01L29/78 , H01L21/336 , H01L31/10
摘要： Transistor pixel devices, imagers, and associated methods are provided. In one aspect, a transistor pixel device includes a photodiode coupled to a floating diffusion region (FD), a storage node (SN), and a power supply, wherein the FD is coupled between the photodiode and the power supply. The device also includes a first global transfer transistor coupled between the photodiode and the FD for gating between the photodiode and the FD and a second global transfer transistor coupled between the FD and the SN for gating between the FD and the SN. A global reset select transistor is coupled between the FD and the power supply, wherein an open state of the global reset select transistor prevents accumulation of electrical charge at the photodiodes. A source follower transistor is coupled to the FD and to the power supply, where the source follower is operable to receive electrical signal from the FD.

9. 发明申请

WO2012088319A2 SEMICONDUCTOR DEVICES HAVING REDUCED SUBSTRATE DAMAGE AND ASSOCIATED METHODS 审中-公开
标题翻译：具有减少的基板损伤和相关方法的半导体器件
公开(公告)号：WO2012088319A2
公开(公告)日：2012-06-28
申请号：PCT/US2011/066602
申请日：2011-12-21
申请人： SIONYX, INC. , VINEIS, Christopher , CAREY, James , LI, Xia
发明人： VINEIS, Christopher , CAREY, James , LI, Xia
IPC分类号： H01L31/0352 , H01L31/0256 , H01L31/0236 , H01L31/18
CPC分类号： H01L31/02363 , H01L31/03529 , H01L31/103 , H01L31/1032 , H01L31/1035 , Y02E10/50
摘要： Optoelectronic devices, materials, and associated methods having increased operating performance are provided. In one aspect, for example, an optoelectronic device can include a semiconductor material, a first doped region in the semiconductor material, a second doped region in the semiconductor material forming a junction with the first doped region, and a laser processed region associated with the junction. The laser processed region is positioned to interact with electromagnetic radiation. Additionally, at least a portion of a region of laser damage from the laser processed region has been removed such that the optoelectronic device has an open circuit voltage of from about 500 mV to about 800 mV.
摘要翻译：提供了具有增加的操作性能的光电器件，材料和相关方法。在一个方面，例如，光电子器件可以包括半导体材料，半导体材料中的第一掺杂区域，形成与第一掺杂区域的结的半导体材料中的第二掺杂区域和与第一掺杂区域相关联的激光处理区域结。激光处理区域定位成与电磁辐射相互作用。此外，已经去除了来自激光加工区域的激光损伤区域的至少一部分，使得光电子器件具有约500mV至约800mV的开路电压。

10. 发明申请

WO2011050336A2 SEMICONDUCTOR DEVICES HAVING AN ENHANCED ABSORPTION REGION AND ASSOCIATED METHODS 审中-公开
标题翻译：具有增强吸收区域的半导体器件及相关方法
公开(公告)号：WO2011050336A2
公开(公告)日：2011-04-28
申请号：PCT/US2010053867
申请日：2010-10-22
申请人： SIONYX INC , CAREY JAMES , SICKLER JASON
发明人： CAREY JAMES , SICKLER JASON
IPC分类号： H01L31/101
CPC分类号： H01L31/02327 , H01L31/0236 , H01L31/1864 , Y02E10/50 , Y02P70/521
摘要： Photosensitive semiconductor devices and associated methods are provided. In one aspect, for example, a photosensitive semiconductor device can include an electromagnetic radiation absorption layer having a thickness of less than or equal to about 200 µm, wherein the electromagnetic radiation absorption layer includes a semiconductor material and an enhanced absorption region. The electromagnetic radiation absorption layer is operable to absorb greater than or equal to about 40% of incident electromagnetic radiation having at least one wavelength greater than or equal to about 1064 nm.
摘要翻译：提供了光敏半导体器件和相关方法。在一个方面，例如，光敏半导体器件可以包括具有小于或等于约200μm的厚度的电磁辐射吸收层，其中电磁辐射吸收层包括半导体材料和增强的吸收区域。电磁辐射吸收层可操作以吸收具有大于或等于约1064nm的至少一个波长的大于或等于约40％的入射电磁辐射。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式