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1. 发明申请

WO1994018522A1 METHOD FOR DETECTING POSITIONAL SHIFT AND GAP 审中-公开
标题翻译：检测位移和差距的方法
公开(公告)号：WO1994018522A1
公开(公告)日：1994-08-18
申请号：PCT/JP1994000178
申请日：1994-02-07
申请人： SORTEC CORPORATION , KATO, Katsuhiro
发明人： SORTEC CORPORATION
IPC分类号： G01B11/00
CPC分类号： G03F9/70
摘要： The structure of the optical system of this detection is simple, and the adjustment of this system is easy. The detection range is wide, and the resolution is high. The positional shift in a plane can be detected, and at the same time, the gap between two objects can be detected directly, stably, and continuously even in exposure. Two pairs of monochromatic beams having a slightly different frequencies are used. The beams are directed to diffraction gratings, or first and second objects, by allowing them to shift to the left and right, respectively, on both sides or one side of the optical axis. A plurality of beams of diffracted rays interfered by optical heterodyne emerge from positions symmetrical to the optical axes. The beams of diffracted rays thus formed are allowed to interfere so that one or more beat signals is produced in each pair. The phase variations of the beat signals between the pairs or in the pairs are determined. Hence the positional shift and gap between the two objects are detected at a time by the sum of and difference of the phase variations.
摘要翻译：该检测的光学系统的结构简单，该系统的调整容易。检测范围宽，分辨率高。可以检测平面中的位置偏移，并且同时即使在曝光中也可以直接，稳定地和连续地检测两个物体之间的间隙。使用具有稍微不同频率的两对单色光束。通过允许它们分别在光轴的两侧或一侧上分别向左和向右移动，将光束引导到衍射光栅或第一和第二物体。被光学外差干涉的多个衍射光束从与光轴对称的位置出现。这样形成的衍射光束被干扰，使得在每一对中产生一个或多个拍频信号。确定成对之间或成对中的节拍信号的相位变化。因此，通过相位变化的总和和差异来一次检测两个对象之间的位置偏移和间隙。

2. 发明授权

US5326672A Resist patterns and method of forming resist patterns 失效
标题翻译：抗蚀剂图案和形成抗蚀剂图案的方法
公开(公告)号：US5326672A
公开(公告)日：1994-07-05
申请号：US964715
申请日：1992-10-22
申请人： Toshihiko Tanaka , Mitsuaki Morigami , Iwao Higashikawa , Takeo Watanabe
发明人： Toshihiko Tanaka , Mitsuaki Morigami , Iwao Higashikawa , Takeo Watanabe
IPC分类号： G03F7/30 , G03C5/00
CPC分类号： G03F7/30
摘要： In accordance with a proposed resist pattern forming method, contact angles between the surface of a resist and a rinse is adjusted within a predetermined range, a volatil surfactant which does not remain by drying is mixed in the rinse so as to reduce a surface tension, the rinse is dried under a critical condition of the rinse in order not to cause the surface tension to exert. The occurrence of an attractive force between the resist patterns may be thereby weakened or nullified, so that falling of the patterns can be effectively prevented which very often happened at forming fine resist patterns or resist patterns of high aspect. On the other hand, depending upon structure of said resist pattern, it is possible to effectively prevent outermost main patterns of gathering resist patterns from falling down. By providing such effects, yielding of products are increased. Further, the present invention may be also applied to a lithography illumination sources of which are light, electron, X-ray, ion beam, etc.
摘要翻译：根据所提出的抗蚀剂图案形成方法，将抗蚀剂表面和冲洗液之间的接触角调节到预定范围内，将不保持干燥的挥发性表面活性剂在冲洗液中混合以降低表面张力，冲洗液在冲洗的临界条件下干燥，以免引起表面张力。因此抗蚀剂图案之间的吸引力的发生可能被削弱或消失，从而可以有效地防止图形的下降，这在形成精细抗蚀剂图案或高方面的抗蚀剂图案时经常发生。另一方面，根据所述抗蚀剂图案的结构，可以有效地防止聚集抗蚀剂图案的最外面的主要图案掉落。通过提供这种效果，产品的产量增加。此外，本发明还可以应用于光，电子，X射线，离子束等的光刻照明源

3. 发明授权

US5434648A Proximity exposure method and machine therefor 失效
标题翻译：接近曝光方法及其机器
公开(公告)号：US5434648A
公开(公告)日：1995-07-18
申请号：US195764
申请日：1994-02-10
申请人： Keisuke Koga , Nobufumi Atoda , Tohru Itoh
发明人： Keisuke Koga , Nobufumi Atoda , Tohru Itoh
IPC分类号： G03F7/20 , G03F9/00 , H01L21/027
CPC分类号： G03F9/70
摘要： A proximity exposure method and apparatus therefor. Replications of mask patterns are carried out, wherein as a mask closely approaches a substrate, the displacement of the mask is detected, and the atmospheric pressure between the mask and the substrate, or around the side of the mask opposite the substrate is controlled so as to cancel the displacement of the mask. The apparatus includes positioning apparatus, a light source for exposing the mask pattern, displacement measuring means, and atmospheric pressure controlling means.
摘要翻译：接近曝光方法及其装置。执行掩模图案的复制，其中当作为掩模紧密接近基板时，检测掩模的位移，并且掩模和基板之间或围绕与基板相对的一侧的大气压力被控制为如以取消掩模的位移。该装置包括定位装置，用于曝光掩模图案的光源，位移测量装置和大气压力控制装置。

4. 发明授权

US5182610A Position detecting method and device therefor as well as aligning device 失效
标题翻译：位置检测方法和设备，如同样的设备
公开(公告)号：US5182610A
公开(公告)日：1993-01-26
申请号：US688115
申请日：1991-04-19
申请人： Hiromasa Shibata
发明人： Hiromasa Shibata
IPC分类号： G03F7/20 , G03F9/00
CPC分类号： G03F7/70633 , G03F9/7049
摘要： The present invention relates to position detection, and aligning structure utilizing optical heterodyne method in semiconductor ultra fine processing or ultra accurate measuring. This is to provide a structure which contains pitches of not less than two kinds with respect to grating pitches of diffraction gratings which directly give influences to signal detecting range and detecting resolution, or which contains different values of not less than two kinds with respect to absolute values n of an order of .+-.n-th order injecting directions (or .+-.n-th order diffraction directions) to be determined by said grating pitches, so as to enable to enlarge a detecting range as maintaining a required detecting resolution (or a structure which can take out diffracted lights in different diffraction directions of not less than two).
摘要翻译：本发明涉及利用光学外差法在半导体超细加工或超精密测量中的位置检测和对准结构。这是为了提供一种结构，该结构相对于直接影响信号检测范围和检测分辨率的衍射光栅的光栅间距，具有不少于两种的间距，或者包含相对于绝对值不同于两种的不同值通过所述光栅间距确定的+/- n次注射方向（或+/- n次衍射方向）的顺序的值n，以便能够将检测范围扩大为保持所需的检测分辨率（或者可以在不同的衍射方向上取出衍射光不少于2个的结构）。

5. 发明授权

US5374502A Resist patterns and method of forming resist patterns 失效
标题翻译：抗蚀剂图案和形成抗蚀剂图案的方法
公开(公告)号：US5374502A
公开(公告)日：1994-12-20
申请号：US083131
申请日：1993-06-25
申请人： Toshihiko Tanaka , Mitsuaki Morigami , Iwao Higashikawa , Takeo Watanabe
发明人： Toshihiko Tanaka , Mitsuaki Morigami , Iwao Higashikawa , Takeo Watanabe
IPC分类号： G03F7/30 , G03F7/32 , G03C5/00
CPC分类号： G03F7/32 , G03F7/30
摘要： In accordance with a proposed resist pattern forming method, contact angles between the surface of a resist and a rinse is adjusted within a predetermined range, a volatil surfactant which does not remain by drying is mixed in the rinse so as to reduce a surface tension, the rinse is dried under a critical condition of the rinse in order not to cause the surface tension to exert. The occurrence of an attractive force between the resist patterns may be thereby weakened or nullified, so that falling of the patterns can be effectively prevented which very often happened at forming fine resist patterns or resist patterns of high aspect. On the other hand, depending upon structure of said resist pattern, it is possible to effectively prevent outermost main patterns of gathering resist patterns from falling down. By providing such effects, yieldings of products are increased. Further, the present invention may be also applied to a lithography illumination sources of which are light, electron, X-ray, ion beam, etc.
摘要翻译：根据所提出的抗蚀剂图案形成方法，将抗蚀剂表面和冲洗液之间的接触角调节到预定范围内，将不保持干燥的挥发性表面活性剂在冲洗液中混合以降低表面张力，冲洗液在冲洗的临界条件下干燥，以免引起表面张力。因此抗蚀剂图案之间的吸引力的发生可能被削弱或消失，从而可以有效地防止图形的下降，这在形成精细抗蚀剂图案或高方面的抗蚀剂图案时经常发生。另一方面，根据所述抗蚀剂图案的结构，可以有效地防止聚集抗蚀剂图案的最外面的主要图案掉落。通过提供这样的效果，产品的产量增加。此外，本发明还可以应用于光，电子，X射线，离子束等的光刻照明源

6. 发明授权

US5325414A X-ray mask alignment method and apparatus therefor as well as X-ray mask to be used to said method and said apparatus 失效
标题翻译： X射线掩模对准方法及其装置以及用于所述方法和所述装置的X射线掩模
公开(公告)号：US5325414A
公开(公告)日：1994-06-28
申请号：US70081
申请日：1993-05-28
申请人： Toshihiko Tanaka , Koichi Okada
发明人： Toshihiko Tanaka , Koichi Okada
IPC分类号： G03F7/20 , G03F9/00 , G21K5/00
CPC分类号： G03F9/7065 , G03F7/70691 , G03F7/70875 , G03F9/7049
摘要： X-ray alignment method and apparatus therefor characterized by separately irradiating alignment light to alignment patterns of an X-ray mask and detecting reflected light therefrom, and directly irradiating alignment light to alignment patterns of a wafer and detecting the reflected light therefrom, and aligning the X-ray mask and the wafer in accordance with the detecting data of the reflected light. The apparatus includes a position alignment mechanism for the mask stage and the wafer stage, which moves the X-ray mask and/or the wafer and provides the alignment therebetween. The apparatus includes independent light sources for irradiating the alignment patterns of the X-ray mask side and the wafer side, independent detectors for detecting the reflected light of the alignment patterns of the X-ray mask and the wafer, and a controller for analyzing the respective positions of the X-ray mask and the wafer in accordance with the detection data and issuing control signals to the position alignment mechanism. The X-ray mask used in the alignment method and apparatus is transparent to only X-rays.
摘要翻译： X射线取向方法及其装置的特征在于，将取向光分别照射到X射线掩模的取向图案并检测其反射光，并将对准光直接照射到晶片的取向图案并检测其反射光， X射线掩模和根据反射光的检测数据的晶片。该装置包括用于掩模台和晶片台的位置对准机构，其移动X射线掩模和/或晶片并在其间提供对准。该装置包括用于照射X射线掩模侧和晶片侧的对准图案的独立光源，用于检测X射线掩模和晶片的对准图案的反射光的独立检测器，以及用于分析X射线掩模根据检测数据对X射线掩模和晶片的各个位置发出控制信号到位置对准机构。在对准方法和装置中使用的X射线掩模仅对X射线是透明的。

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