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1. 发明专利

JP2009091237A Method and apparatus for manufacturing ultra low defect semiconductor single crystalline ingot 有权
标题翻译：用于制造超低缺陷半导体单晶体的方法和装置
公开(公告)号：JP2009091237A
公开(公告)日：2009-04-30
申请号：JP2008256592
申请日：2008-10-01
申请人： Siltron Inc , シルトロンインク
发明人： HONG YOUNG-HO , CHO HYON-JONG , LEE SUNG-YOUNG , SHIN SEUNG-HO , LEE HONG-WOO
IPC分类号： C30B29/06 , C30B15/00
CPC分类号： C30B15/14 , C30B15/203 , C30B15/206 , C30B29/06
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing an ultra low defect semiconductor single crystalline ingot in which the cooling efficiency of the single crystalline ingot is controlled according to a length of a single crystalline ingot, a defect-free margin is made to be maintained or increased uniformly through whole divisions of a process, and thereby a pull-up speed can be raised, and to provide an apparatus for manufacturing the same. SOLUTION: The method for manufacturing an ultra low defect semiconductor single crystalline ingot uses a Czochralski process for growing a semiconductor single crystalline ingot through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and slowly pulling up the seed while rotating the seed, wherein a defect-free margin is controlled by increasing or decreasing a heat space on a surface of the semiconductor melt according to change in length of the single crystalline ingot as progress of the single crystalline ingot growth process. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种制造超低缺陷半导体单晶锭的方法，其中根据单晶锭的长度来控制单晶锭的冷却效率，无缺陷的边缘为通过工艺的整个分割被均匀地维持或增加，从而可以提高上拉速度，并提供其制造装置。解决方案：制造超低缺陷半导体单晶锭的方法使用Czochralski工艺，通过将种子浸入容纳在石英坩埚中的半导体熔体中并通过固 - 液界面生长半导体单晶锭，并缓慢拉同时旋转种子，其中通过随着单晶锭生长过程的进行，根据单晶锭的长度变化增加或减少半导体熔体的表面上的热空间来控制无缺陷边缘。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2008166763A Wafer supporting pin capable of preventing slip dislocation in heat treating of wafer and heat treating method of wafer 有权
标题翻译：用于防止水处理中的滑动偏差的散热器支撑引脚和加热处理方法
公开(公告)号：JP2008166763A
公开(公告)日：2008-07-17
申请号：JP2007325089
申请日：2007-12-17
申请人： Siltron Inc , シルトロンインク
发明人： KIM KUN , HONG JIN-KYUN , SEO WOO-HYUN , SONG KYOUNG-HWAN
IPC分类号： H01L21/324 , H01L21/26 , H01L21/683
CPC分类号： H01L21/6875 , H01L21/68757
摘要： PROBLEM TO BE SOLVED: To provide a wafer supporting pin and a heat treating method of a wafer capable of suitably being used in the heat treatment of the wafer, especially, in the high-temperature quick heat treatment of a large diameter wafer. SOLUTION: In the wafer supporting pin, a front end brought into contact with the wafer is flattened or round-processed. Slip dislocation is minimized by minimizing stress caused by the gravity of the wafer in the heat treatment of the wafer. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种能够适当地用于晶片的热处理的晶片支撑销和热处理方法，特别是在大直径晶片的高温快速热处理中。解决方案：在晶片支撑销中，与晶片接触的前端被平坦化或圆形加工。通过在晶片的热处理中最小化由晶片的重力引起的应力来减小滑移位错。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2008100904A Method for production of semiconductor single crystal using czochralski method, and semiconductor single crystal ingot and wafer produced by the method 有权
标题翻译：使用CZOCHRALSKI方法生产半导体单晶的方法和通过该方法生产的半导体单晶体和晶体
公开(公告)号：JP2008100904A
公开(公告)日：2008-05-01
申请号：JP2007269525
申请日：2007-10-16
申请人： Siltron Inc , シルトロンインク
发明人： HONG YOUNG-HO , LEE SANG-JUN , JEONG SEONG-OH , LEE HONG-WOO
IPC分类号： C30B29/06 , C30B15/22
CPC分类号： C30B15/305 , C30B15/36
摘要： PROBLEM TO BE SOLVED: To provide a method for production of a semiconductor single crystal using the Czochralski method in which productivity is improved compared with a conventional one, by expanding the specific resistance profile along the longitudinal direction of a crystal to increase the prime length of the single crystal, and to provide a semiconductor single crystal ingot produced by the method and a wafer prepared from the ingot. SOLUTION: A seed crystal is immersed in the melt SM of a semiconductor raw material and a dopant material contained in a crucible 10, and then a semiconductor single crystal C is grown by gradually pulling the seed crystal upward while rotating. In this case, the specific resistance profile which is theoretically calculated along the longitudinal direction of the crystal C by applying to the crucible, a cusp asymmetric magnetic field in which the magnetic field intensity at an upper part is different from that at a lower part is expanded along the longitudinal direction of the crystal C using the ZGP (Zero Gauss Plane) in which the vertical component of the magnetic field is zero as a basis. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用与常规方法相比提高生产率的Czochralski方法制造半导体单晶的方法，通过沿着晶体的纵向方向扩大电阻率分布以增加并且提供通过该方法制备的半导体单晶锭和从该锭制备的晶片。解决方案：将晶种浸入坩埚10中包含的半导体原料和掺杂剂材料的熔融SM中，然后通过在旋转的同时向上逐渐拉晶晶来生长半导体单晶C. 在这种情况下，通过施加到坩埚上沿着晶体C的纵向方向理论计算的电阻分布，其上部的磁场强度与下部的磁场强度不同的尖点非对称磁场是使用其中磁场的垂直分量为零的ZGP（零高斯平面）沿着晶体C的纵向方向扩展。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2008085333A Method of discriminating crystal defect region in monocrystalline silicon using metal contamination and heat treatment 有权
标题翻译：使用金属污染和热处理在单晶硅中鉴别晶体缺陷区的方法
公开(公告)号：JP2008085333A
公开(公告)日：2008-04-10
申请号：JP2007245845
申请日：2007-09-21
申请人： Siltron Inc , シルトロンインク
发明人： WEE SANG-WOOK , LEE SUNG-WOOK , BAE KI-MAN , KIM KWANG-SALK
IPC分类号： H01L21/66 , C30B29/06
CPC分类号： G01N21/9501 , H01L22/24
摘要： PROBLEM TO BE SOLVED: To provide a method of discriminating a crystal defect region of monocrystalline silicon by utilizing metal contamination and heat treatment, which can analyze the crystal defect region accurately and easily in a short time period without depending on the concentration of oxygen in monocrystalline silicon. SOLUTION: In this method of discriminating a crystal defect region of monocrystalline silicon, after a sample in the shape of a silicon wafer or a slice of monocrystalline silicon ingot is prepared, at least one side of the sample is contaminated with metal at a contamination concentration of about 1×10 14 to 5×10 16 atoms/cm 2 . The contaminated sample is heat-treated, and of which the contaminated side or the opposite side of the heat-treated sample is observed to discriminate a crystal defect region. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供通过利用金属污染和热处理来区分单晶硅的晶体缺陷区域的方法，其可以在短时间内精确而容易地分析晶体缺陷区域而不依赖于单晶硅中的氧。解决方案：在鉴别单晶硅的晶体缺陷区域的方法中，在制备硅晶片或单晶硅锭片的样品之后，样品的至少一侧被金属污染污染浓度约为1×10 14 / SP>至5×10 16 / SP原子/ cm 2 SP / 2。受污染的样品被热处理，并且其中观察到热处理样品的污染侧或相反侧以区分晶体缺陷区域。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2006253628A Compound semiconductor apparatus and manufacturing method thereof 有权
标题翻译：化合物半导体装置及其制造方法
公开(公告)号：JP2006253628A
公开(公告)日：2006-09-21
申请号：JP2005193051
申请日：2005-06-30
申请人： Pohang Eng College , Siltron Inc , シルトロンインク , 學校法人浦項工科大學校
发明人： YI GYU-CHUL , AN SUNG JIN , KIM YONG JIN , LEE DONG-KUN
IPC分类号： H01S5/323 , C30B25/18 , C30B29/38 , H01L21/205 , H01L33/32
CPC分类号： H01L33/12 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L31/0296 , H01L31/035281 , H01L33/007
摘要： PROBLEM TO BE SOLVED: To provide a compound semiconductor apparatus provided with a compound semiconductor thin film grown up on a substrate coated with spherical balls, and to provide a manufacturing method thereof. SOLUTION: The compound semiconductor apparatus comprises the substrate, the spherical balls arrayed on the substrate, and the compound semiconductor thin film formed among the spherical balls and on the tops of the spherical balls and emitting UV, visible beams or light in an infrared area. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种化合物半导体装置，其具有在涂覆有球形球的基材上长大的化合物半导体薄膜，并提供其制造方法。解决方案：化合物半导体装置包括基板，排列在基板上的球形球，以及形成在球形球之间和球形球顶部上的化合物半导体薄膜，并且在其中发射UV，可见光或光红外区域。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2004172564A Annealed wafer and its manufacturing method 审中-公开
公开(公告)号：JP2004172564A
公开(公告)日：2004-06-17
申请号：JP2003057633
申请日：2003-03-04
申请人： Siltron Inc , シルトロンインク
发明人： MUN YOUNG-HEE , KIM GUN , YOON SUNG-HO
IPC分类号： H01L21/324 , H01L21/322
CPC分类号： H01L21/3225
摘要： PROBLEM TO BE SOLVED: To provide an annealed wafer of high quality wherein Grown-in defect is eliminated, an element active region is made non-defective and slip defect is not generated even in high temperature heat treatment forming a high density oxygen defect layer in a silicon wafer, and its manufacturing method. SOLUTION: The manufacturing method of an annealed wafer comprises a step for preheating a silicon wafer at about 500°C, a temperature-up step for raising the temperature in a heat treatment furnace to about 1,100°C or higher under atmosphere of an inert gas comprising argon gas or mixture gas of hydrogen gas and argon gas or the like, a heat treatment step for carrying out heat treatment keeping a fixed temperature of 1,100°C or higher for a fixed period of time and a temperature-down step for lowering the temperature to about 500°C. In the method, the initial oxygen concentration of the silicon wafer has a range of 11 to 14 ppma, the temperature-up and temperature-down velocity in the temperature-up step and the temperature-down step is 1 to 14°C/min in a temperature interval of 500 to 1,100°C, especially the temperature-up and temperature-down velocity is 1 to 7°C/min. COPYRIGHT: (C)2004,JPO

7. 发明专利

JP2014240342A 充電装置有权
标题翻译：充电设备
公开(公告)号：JP2014240342A
公开(公告)日：2014-12-25
申请号：JP2013262473
申请日：2013-12-19
申请人：エルジー・シルトロン・インコーポレーテッド , Lg Siltron Inc
发明人： JANG SO YOUNG , HONG YOUNG HO
IPC分类号： C30B15/02
CPC分类号： C30B15/002 , C30B11/001 , C30B15/02 , C30B15/04 , Y10T117/1056
摘要：【課題】溶融液による汚染を防ぎ、かつ周辺に位置する構成物の破損を防止することができる充電装置を提供する。【解決手段】実施例に係る充電装置は、投入口及び排出口を有するボディーと;複数個に分割された蓋を含み、前記蓋のそれぞれは前記ボディーの一端に連結され、前記ボディーの一端を軸に回転する蓋部と;前記蓋のそれぞれの一面を支持し、前記蓋のそれぞれを前記ボディーの一端と連結された部分を軸に回転させる開閉調節部と;を含む。【選択図】図2
摘要翻译：要解决的问题：提供一种能够防止由熔融液体引起的污染的充电装置，并且防止位于周边的部件的断裂。解决方案：一个实施例中的充电装置包括：主体，具有输入端口和排出端口 ; 盖部分，其包括被分成多个盖的盖，每个盖连接到主体的一端并围绕主体的一端旋转; 以及用于支撑每个盖的一个表面并且围绕连接到主体的一端的部分旋转每个盖的打开/关闭调节部。

8. 发明专利

JP2009143796A Method for manufacturing gallium nitride single crystalline substrate using self-split 有权
标题翻译：使用自分离法制造氮化镓单晶衬底的方法
公开(公告)号：JP2009143796A
公开(公告)日：2009-07-02
申请号：JP2008311832
申请日：2008-12-08
申请人： Siltron Inc , シルトロンインク
发明人： LEE HO JUN , KIM DOO-SOO , LEE DONG-KUN , KIMU YONJIN
IPC分类号： C30B29/38 , C23C16/01 , C23C16/34 , C30B25/18 , H01L21/205
CPC分类号： C30B29/406 , C30B25/18
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a gallium nitride single crystalline substrate which enables easy splitting of a gallium nitride single crystalline layer from a base substrate and production of a large-area substrate. SOLUTION: The method for manufacturing the gallium nitride single crystalline substrate comprises (a) growing a gallium nitride film 12 on a flat base substrate 10 made of a material having a thermal expansion coefficient smaller than that of gallium nitride and cooling the gallium nitride film to convex-bend upwards the base substrate 10 and the gallium nitride film 12, and at the same time creating cracks in the gallium nitride film 12, (b) growing a gallium nitride single crystalline layer 14 on the crack-created gallium nitride film 12 located on the upward convex-bent base substrate 10, and (c) cooling a resultant product having the grown gallium nitride single crystalline layer 14 to warp the upward convex-bent resultant product flat or convex-bent downwards again and at the same time to self-split the base substrate 10 and the gallium nitride single crystalline layer 14 from each other at the crack-created gallium nitride film 12 interposed therebetween. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种制造氮化镓单晶衬底的方法，其能够容易地从基底衬底分离氮化镓单晶层并生产大面积衬底。解决方案：制造氮化镓单晶衬底的方法包括：（a）在具有比氮化镓的热膨胀系数小的材料制成的平坦的基底衬底10上生长氮化镓膜12，并冷却镓氮化物膜向上弯曲基底衬底10和氮化镓膜12，同时在氮化镓膜12中产生裂纹，（b）在裂纹产生的氮化镓上生长氮化镓单晶层14 薄膜12，其位于向上凸弯的基底基板10上，（c）冷却具有生长的氮化镓单晶层14的所得产品，以使向上凸起的产品平坦或向下弯曲并向下弯曲在裂纹产生的氮化镓膜12之间自由分裂基底衬底10和氮化镓单晶层14的时间。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2009071279A Substrate for growing gallium nitride and method for preparing substrate for growing gallium nitride 有权
标题翻译：用于生长氮化镓的基板和用于制备用于生长氮化镓的基板的方法
公开(公告)号：JP2009071279A
公开(公告)日：2009-04-02
申请号：JP2008190935
申请日：2008-07-24
申请人： Siltron Inc , シルトロンインク
发明人： KIM YONG JIN , KIM JI HUN , LEE DONG-KUN , KIM DOO-SOO , LEE HO-JUN
IPC分类号： H01L33/32
CPC分类号： C30B29/406 , C30B25/02 , C30B25/18
摘要： PROBLEM TO BE SOLVED: To provide a substrate for growing gallium nitride and a method for preparing the substrate for growing gallium nitride.
SOLUTION: The method for preparing the substrate for growing gallium nitride includes performing thermal cleaning on a surface of a silicon substrate, forming a Si
3 N
4 micro-mask on the surface of the silicon substrate in an in situ manner, and growing a gallium nitride layer through epitaxial lateral overgrowth (ELO) using an opening in the micro-mask. According to the method, by improving the typical ELO, it is possible to simplify the gallium nitride substrate and the method for preparing the substrate for growing gallium nitride and reduce process cost.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于生长氮化镓的衬底以及用于制备用于生长氮化镓的衬底的方法。解决方案：制备用于生长氮化镓的衬底的方法包括在硅衬底的表面上进行热清洗，形成Si <3> S 微掩模以原位方式在硅衬底的表面上，并且使用微掩模中的开口通过外延横向过度生长（ELO）生长氮化镓层。根据该方法，通过改善典型的ELO，可以简化氮化镓衬底和用于制备用于生长氮化镓的衬底的方法，并降低工艺成本。版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2008166804A Method of cleaning substrate for solar cell 审中-公开
标题翻译：清洁太阳能电池基板的方法
公开(公告)号：JP2008166804A
公开(公告)日：2008-07-17
申请号：JP2007337076
申请日：2007-12-27
申请人： Siltron Inc , シルトロンインク
发明人： CHU HYONSOKU
IPC分类号： H01L31/04
CPC分类号： H01L31/18 , B08B3/10
摘要： PROBLEM TO BE SOLVED: To minimize contamination, breakage or the like, which can occur in the process of intermediate handlings of a substrate, and to effectively remove the contaminations that remain in the substrate. SOLUTION: A method of cleaning the substrate for a solar cell includes a step (S11) of slicing an ingot for manufacturing a solar cell substrate into a plurality of pieces of a thinned substrate, while supplying a cutting oil, with the ingot being attached to be hung on a slicing apparatus, and of placing in a cleaner, the plurality of pieces of the thinned substrate being in a state of being hung in parallel vertically downward; a step (S12) of removing the cutting oil that remains on the sliced surface of the thinned substrate placed vertically; a step (S13) of activating the surface to improve the detergency of the surface of the thinned substrate; and a step (S14) of chemically etching the surface-activated substrate. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了最小化在基材的中间处理过程中可能发生的污染，破裂等，并且有效地除去残留在基材中的污染物。解决方案：一种清洁太阳能电池用基板的方法，包括：将供应切削油的锭子用于将太阳能电池基板的制造用块切割成多片薄板化基板的工序（S11）被附着在一个切片装置上，并放置在一个清洁器中，该多个薄片基片处于垂直向下垂直悬挂的状态; 去除在垂直放置的薄化基板的切片表面上残留的切削油的工序（S12）激活表面以改善所述薄化基板的表面的去污力的步骤（S13）; 以及化学蚀刻表面活化基板的步骤（S14）。版权所有（C）2008，JPO＆INPIT

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