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1. 发明专利

JP2008085333A Method of discriminating crystal defect region in monocrystalline silicon using metal contamination and heat treatment 有权
标题翻译：使用金属污染和热处理在单晶硅中鉴别晶体缺陷区的方法
公开(公告)号：JP2008085333A
公开(公告)日：2008-04-10
申请号：JP2007245845
申请日：2007-09-21
申请人： Siltron Inc , シルトロンインク
发明人： WEE SANG-WOOK , LEE SUNG-WOOK , BAE KI-MAN , KIM KWANG-SALK
IPC分类号： H01L21/66 , C30B29/06
CPC分类号： G01N21/9501 , H01L22/24
摘要： PROBLEM TO BE SOLVED: To provide a method of discriminating a crystal defect region of monocrystalline silicon by utilizing metal contamination and heat treatment, which can analyze the crystal defect region accurately and easily in a short time period without depending on the concentration of oxygen in monocrystalline silicon. SOLUTION: In this method of discriminating a crystal defect region of monocrystalline silicon, after a sample in the shape of a silicon wafer or a slice of monocrystalline silicon ingot is prepared, at least one side of the sample is contaminated with metal at a contamination concentration of about 1×10 14 to 5×10 16 atoms/cm 2 . The contaminated sample is heat-treated, and of which the contaminated side or the opposite side of the heat-treated sample is observed to discriminate a crystal defect region. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供通过利用金属污染和热处理来区分单晶硅的晶体缺陷区域的方法，其可以在短时间内精确而容易地分析晶体缺陷区域而不依赖于单晶硅中的氧。解决方案：在鉴别单晶硅的晶体缺陷区域的方法中，在制备硅晶片或单晶硅锭片的样品之后，样品的至少一侧被金属污染污染浓度约为1×10 14 / SP>至5×10 16 / SP原子/ cm 2 SP / 2。受污染的样品被热处理，并且其中观察到热处理样品的污染侧或相反侧以区分晶体缺陷区域。版权所有（C）2008，JPO＆INPIT

2. 发明专利

DE102007044924A1 未知
公开(公告)号：DE102007044924A1
公开(公告)日：2008-06-12
申请号：DE102007044924
申请日：2007-09-20
申请人： SILTRON INC
发明人： WEE SANG-WOOK , LEE SEUNG-WOOK , BAE KI-MAN , KIM KWANG-SALK
IPC分类号： C30B33/00 , C30B29/06 , C30B33/02
摘要： Provided is a method of identifying crystal defect regions of monocrystalline silicon using metal contamination and heat treatment. In the method, a sample in the shape of a silicon wafer or a slice of monocrystalline silicon ingot is prepared. At least one side of the sample is contaminated with metal at a contamination concentration of about 1×1014 to 5×1016 atoms/cm2. The contaminated sample is heat-treated. The contaminated side or the opposite side of the heat-treated sample is observed to identify a crystal defect region. The crystal defect region can be analyzed accurately, easily and quickly without the use of an additional check device, without depending on the concentration of oxygen in the monocrystalline silicon.

3. 发明专利

SG141383A1 METHOD OF IDENTIFYING CRYSTAL DEFECT REGION IN MONOCRYSTALLINE SILICON USING METAL CONTAMINATION AND HEAT TREATMENT 未知
公开(公告)号：SG141383A1
公开(公告)日：2008-04-28
申请号：SG2007085913
申请日：2007-09-24
申请人： SILTRON INC
发明人： WEE SANG-WOOK , LEE SEUNG-WOOK , BAE KI-MAN , KIM KWANG-SALK
摘要： METHOD OF IDENTIFYING CRYSTAL DEFECT REGION IN MONOCRYSTALLINE SILICON USING METAL CONTAMINATION AND HEAT TREATMENT Provided is a method of identifying crystal defect regions of monocrystalline silicon using metal contamination and heat treatment. In the method, a sample in the shape of a silicon wafer or a slice of monocrystalline silicon ingot is prepared. At least one side of the sample is contaminated with metal at a contamination concentration of about The contaminated sample is heat-treated. The contaminated side or the opposite side of the heat-treated sample is observed to identify a crystal defect region. The crystal defect region can be analyzed accurately, easily and quickly without the use of an additional check device, without depending on the concentration of oxygen in the monocrystalline silicon.

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