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1. 发明专利

JP2007132940A Moving type microflow controller through fine pressure control 审中-公开
标题翻译：移动式微流控制器通过精细压力控制
公开(公告)号：JP2007132940A
公开(公告)日：2007-05-31
申请号：JP2006303917
申请日：2006-11-09
申请人： Postech Academy-Industry Foundation , Postech Foundation , ポステックアカデミー−インダストリーファンデーション , ポステックファンデーション
发明人： LEE SANG-JOON , KIM GUK-BAE
IPC分类号： G01N37/00
CPC分类号： B01L9/527 , B01J2219/00871 , B01L3/5027 , B01L2200/146 , B01L2400/0487 , B01L2400/0633 , B01L2400/0644 , G05D7/0694
摘要： PROBLEM TO BE SOLVED: To provide a compact and lightweight moving type microflow controller through fine pressure control, movable for portable use and capable of controlling effectively a microflow in a chip.
SOLUTION: This microflow controller includes a pressure generation part provided with a plurality of pressurizing chambers and decompression chambers for generating set pressures respectively, a valve kit including a plurality of selection valves, and a valve control part for controlling the selection valves to select the set pressure transmitted to a biochip. The each selection valve is constituted to transmit the one set pressure out of the many kinds of set pressures corresponding to the respective pressure chambers, to the biochip through a connection passage.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过精细压力控制提供一种紧凑轻便的移动式微流控制器，可移动便携式使用，并能够有效地控制芯片中的微流。解决方案：该微流量控制器包括：压力产生部，设置有分别产生设定压力的多个加压室和减压室，包括多个选择阀的阀套件和用于控制选择阀的阀控制部件选择传输到生物芯片的设定压力。每个选择阀被构造成通过连接通道将对应于各个压力室的多种设定压力中的一个设定压力传递到生物芯片。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2014179654A GaN-BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：基于GaN的化合物半导体发光元件及其制造方法
公开(公告)号：JP2014179654A
公开(公告)日：2014-09-25
申请号：JP2014117745
申请日：2014-06-06
申请人： Seoul Viosys Co Ltd , ソウルバイオシスカンパニーリミテッドSeoul Viosys Co.,Ltd. , Postech Foundation , ポステック・ファウンデーション
发明人： LEE JONG-LAM
IPC分类号： H01L33/10 , H01L33/44 , H01L33/32 , H01L33/38 , H01L33/40
CPC分类号： H01L33/40 , H01L33/0079 , H01L33/32 , H01L33/387 , H01L33/405 , H01L33/44
摘要： PROBLEM TO BE SOLVED: To provide a vertical type GaN light emitting element capable of improving characteristics of a horizontal type light emitting element by a metal protection film layer and a metal support layer.SOLUTION: A thick metal protection film layer 1100 of 10 micron or more is formed on the side surface and/or the lower surface of a vertical type GaN-LED, so that an element can be protected from an external impact and chip separation can be easily performed. And also, a metal substrate is used instead of a sapphire substrate so that heat that is generated at the time of element operation can be easily released, thereby suitable for use in a high output element. Thus, an element having improved optical output characteristics can be manufactured. A metal support layer 1900 is formed so that a phenomenon such that the element is distorted at the time of chip separation or damaged by an impact can be prevented. A p-type electrode 1200 is partially formed in a network on a p-GaN 1300, so that radiation of photon formed in an active layer 1400 toward an n-GaN layer 1500 can be maximized.
摘要翻译：要解决的问题：提供一种能够通过金属保护膜层和金属支撑层改善水平型发光元件的特性的垂直型GaN发光元件。解决方案：10微米的厚金属保护膜层1100或在垂直型GaN-LED的侧面和/或下表面上形成更多的元素，从而可以保护元件免受外部冲击，并且可以容易地进行芯片分离。而且，使用金属基板代替蓝宝石基板，能够容易地释放元件运转时产生的热量，适合用于高输出元件。因此，可以制造具有改善的光输出特性的元件。形成金属支撑层1900，从而可以防止在芯片分离时或元件被冲击损坏时元件变形的现象。 p型电极1200部分地形成在p-GaN 1300上的网络中，使得在有源层1400中形成的朝向n-GaN层1500形成的光子的辐射可以最大化。

3. 发明专利

JP2010151828A Substrate, manufacturing method, diagnostic system, and detecting method 有权
标题翻译：基板，制造方法，诊断系统和检测方法
公开(公告)号：JP2010151828A
公开(公告)日：2010-07-08
申请号：JP2010025682
申请日：2010-02-08
申请人： Posco , Postech Foundation , ポスコ , ポステックファンデーション
发明人： PARK JOON WON , HONG BONG JIN , CHOI YOUNG SEO , OH SOON JIN , CHOI KWAN YONG
IPC分类号： G01N33/543 , C12N15/09 , C12Q1/68 , G01N33/53 , G01N33/547 , G01N33/574
摘要： PROBLEM TO BE SOLVED: To provide a substrate where the size of a molecule binding to a ligand is controlled, and preferably conical compound is bound. SOLUTION: An application of a substrate is disclosed, which includes a molecular film of dendrimer macromolecule in which the size of a uniform spacer is controlled, which includes a polymer including a branched portion and a linear portion, wherein abundant terminals of the branched potion bind to the substrate and the terminal of the linear portion is functionalized. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供控制与配体结合的分子的尺寸的基底，优选结合锥形化合物。解决方案：公开了一种基板的应用，其包括树枝状大分子的分子膜，其中均匀间隔物的尺寸被控制，其包括包含分支部分和直链部分的聚合物，其中丰富的末端分支药剂结合到基底上，线性部分的末端被官能化。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2008118087A T-gate forming method for high electron mobility transistor and gate structure thereof 有权
标题翻译：用于高电子移动性晶体管的门极形成方法及其门结构
公开(公告)号：JP2008118087A
公开(公告)日：2008-05-22
申请号：JP2007050000
申请日：2007-02-28
申请人： Postech Academy-Industry Foundation , Postech Foundation , ポステック・アカデミー‐インダストリー・ファウンデーション , ポステック・ファウンデーション
发明人： JEONG YOON-HA , LEE KANG-SUNG , KIM YOUNG-SOO , HONG YUN-KI , JUNG SUNG-WOO
IPC分类号： H01L21/338 , H01L21/027 , H01L29/812
CPC分类号： H01L29/7787 , H01L29/42316 , H01L29/66462
摘要： PROBLEM TO BE SOLVED: To provide a T-gate forming method for a high electron mobility transistor and a gate structure thereof. SOLUTION: The T-gate forming method for the high electron mobility transistor includes: a first step of coating a semiconductor substrate with a first, a second and a third resist, each having an electron beam sensitivity different from each other; a second step of performing a first exposure process by using an electron beam and then selectively developing the third resist; a third step of defining a gate head area 402 by selectively developing the second resist to have a developed width relatively wider than that of the selectively developed third resist; a fourth step of performing a second exposure process by using an electron beam on the semiconductor substrate having the third resist and second resist selectively developed and then selectively developing the first resist at a temperature relatively lower than in the development of the second and the third steps; and a fifth step of depositing metallic materials along the selectively developed resists and then removing them to form a T-gate having the gate head and a gate foot 404. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于高电子迁移率晶体管的T形栅形成方法及其栅极结构。解决方案：用于高电子迁移率晶体管的T形栅形成方法包括：第一步骤，用具有彼此不同的电子束灵敏度的第一，第二和第三抗蚀剂涂覆半导体衬底; 第二步骤，通过使用电子束进行第一曝光处理，然后选择性地显影第三抗蚀剂; 通过选择性地显影所述第二抗蚀剂以使显影宽度相对于所述选择性显影的第三抗蚀剂的显影宽度相对宽度来限定栅极头区域402的第三步骤; 第四步骤，通过在具有第三抗蚀剂和第二抗蚀剂的半导体衬底上使用电子束进行第二曝光处理，所述第二曝光选择性地显影，然后在比第二和第三步骤的显影中相对低的温度下选择性地显影第一光刻胶 ; 以及第五步，沿着选择性显影的抗蚀剂沉积金属材料，然后去除它们以形成具有栅极头和栅极脚404的T形栅极。（C）2008，JPO和INPIT

5. 发明专利

JP2008053265A Method of manufacturing single-crystal conjugate polymer nanostructure by surface-inducted self-assembly 审中-公开
标题翻译：通过表面诱导自组装制造单晶共轭聚合物纳米结构的方法
公开(公告)号：JP2008053265A
公开(公告)日：2008-03-06
申请号：JP2006225107
申请日：2006-08-22
申请人： Postech Academy-Industry Foundation , Postech Foundation , ポステック・アカデミー‐インダストリー・ファウンデーション , ポステック・ファウンデーション
发明人： CHO KILWON , KIM DO HWAN
IPC分类号： H01L51/40 , B82B1/00 , B82B3/00 , H01L29/06 , H01L51/05 , H01L51/30
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a single-crystal conjugate high polymer nanostructure, by self-seeding a self-assembly that can be arranged regularly in a large area through a surface-induced selective self-assembly process, and is useful for next-generation supramolecular organic electronic elements, such as high-performance and highly-integration supramolecular transistors, supramolecular light-emitting elements, supramolecular biosensors. SOLUTION: The single-crystal conjugate polymer nanostructure that is grown by surface-induced self-assembly can be arranged regularly in a large area by a selective surface-induced self-assembly process. It exhibits a low electrical resistance and superior field effect, so that it can be applied usefully to next-generation supramolecular organic electronic elements, such as high-performance and high-integration supramolecular transistors, supramolecular light-emitting elements, supramolecular biosensors. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供单晶共轭高分子纳米结构体的制造方法，可以通过表面诱导的选择性自组装方法自我接种可以大面积规则排列的自组装并且可用于下一代超分子有机电子元件，如高性能和高度集成的超分子晶体管，超分子发光元件，超分子生物传感器。解决方案：通过表面诱导的自组装生长的单晶共轭聚合物纳米结构可以通过选择性表面诱导的自组装工艺在大面积上规则地布置。它具有低电阻和优异的场效应，可以有效地应用于下一代超分子有机电子元件，如高性能和高集成度的超分子晶体管，超分子发光元件，超分子生物传感器。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2007275883A Nanoporous tungsten carbide catalyst and preparation method thereof 有权
标题翻译：纳米碳纳米管催化剂及其制备方法
公开(公告)号：JP2007275883A
公开(公告)日：2007-10-25
申请号：JP2007097266
申请日：2007-04-03
申请人： Postech Academy-Industry Foundation , Postech Foundation , ポステック・アカデミー‐インダストリー・ファウンデーション , ポステック・ファウンデーション
发明人： LEE JAE SUNG , JUNG MOOYOUNG , RAMAN GANESAN , KIM YOUNGKWON
IPC分类号： B01J27/22 , B01J35/04 , B01J35/10 , B01J37/08 , B01J37/10 , C01B32/949 , H01M4/90
CPC分类号： B01J27/22 , H01M4/90 , H01M4/92 , H01M4/925 , H01M8/086 , H01M8/1009 , Y02E60/523 , Y02P70/56
摘要： PROBLEM TO BE SOLVED: To provide a nanoporous tungsten carbide catalyst that can be used as an electrode of a fuel cell, and a preparation method thereof. SOLUTION: Provided are the nanoporous tungsten carbide catalyst, which includes tungsten carbide crystalline particles and has nanopores of a mean pore diameter ranging from 2 nm to 5 nm and a nanopore volume of 0.08 to 0.25 cm 3 per gram of the catalyst, the preparation method thereof, an electrode and a fuel cell, such as a direct methanol fuel cell and a polymer electrolyte membrane fuel cell, to which the nanoporous tungsten carbide catalyst is applied. The nanoporous tungsten carbide catalyst has high electrochemical activity and enhanced resistance to poisoning by carbon monoxide. This catalyst can keep high activity even when used as the electrode of the fuel cell for a long period of time. Since this catalyst has a wide surface area, a metallic active component can be dispersed suitably in this catalyst and consequently a metallic active component-supported catalyst can exhibit higher catalytic activity even when the metallic active component of the amount smaller than that of the conventional noble metal catalyst is supported. The electrode and the fuel cell employing this catalyst can be manufactured at lower costs, respectively. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供可用作燃料电池的电极的纳米多孔碳化钨催化剂及其制备方法。解决方案：提供纳米多孔碳化钨催化剂，其包括碳化钨结晶颗粒并且具有平均孔径范围为2nm至5nm和纳米孔体积为0.08至0.25cm 3（SP）的纳米孔 >每克催化剂，其制备方法，电极和燃料电池，例如直接甲醇燃料电池和聚合物电解质膜燃料电池，其中应用纳米多孔碳化钨催化剂。纳米多孔碳化钨催化剂具有高电化学活性和增强的抗一氧化碳中毒性。即使长时间用作燃料电池的电极，该催化剂也能保持高的活性。由于该催化剂具有较宽的表面积，所以金属活性成分可以适当地分散在该催化剂中，因此即使金属活性成分的量少于常规贵金属的金属活性成分，金属活性成分负载型催化剂也能够表现出更高的催化活性金属催化剂。可以分别以较低的成本制造使用该催化剂的电极和燃料电池。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2009261412A Leukocyte stimulating peptide 有权
标题翻译：白蛋白刺激肽
公开(公告)号：JP2009261412A
公开(公告)日：2009-11-12
申请号：JP2009160485
申请日：2009-07-07
申请人： Posco , Postech Foundation , ポスコ , ポステックファンデーション
发明人： RYU SUNG-HO , BAE YOE-SIK , PARK EUN-YOUNG , SUH PANN-GHILL
IPC分类号： C12N15/09 , A61K31/7088 , A61K38/00 , A61K48/00 , A61P31/04 , A61P31/12 , A61P31/18 , A61P35/00 , A61P37/04 , A61P43/00 , C07K7/06 , C07K7/08 , C07K16/44 , C12N1/15 , C12N1/19 , C12N1/21 , C12N5/06 , C12N5/10 , C12N15/07
CPC分类号： C07K7/06 , A61K38/00
摘要： PROBLEM TO BE SOLVED: To provides peptides that stimulate release of arachidonic acid in target cells and peptides inducing release of calcium in cells. SOLUTION: The present inventors have identified 24 peptides that participate in arachidonic acid release in neutrophil-like differentiated HL60 (dHL60) cells, and found that these peptides act as chemotactic substances for human phagocytes. Several peptides binds to the formyl peptide receptor-like 1 (FPRL1). Some of the peptides are also bound to other receptor(s) expressed in HL60 cells. In addition, each peptide can stimulate shared and distinct intracellular signaling pathways. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供刺激靶细胞中花生四烯酸释放的肽和诱导细胞中钙释放的肽。解决方案：本发明人鉴定了参与嗜中性粒细胞样分化HL60（dHL60）细胞中花生四烯酸释放的24种肽，发现这些肽作为人吞噬细胞的趋化性物质。几种肽与甲酰肽受体样1（FPRL1）结合。一些肽也与HL60细胞中表达的其它受体结合。此外，每种肽可以刺激共享和独特的细胞内信号通路。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2012124523A Gan-based compound semiconductor light-emitting element, and method of manufacturing the same 审中-公开
标题翻译：基于GAN的化合物半导体发光元件及其制造方法
公开(公告)号：JP2012124523A
公开(公告)日：2012-06-28
申请号：JP2012035499
申请日：2012-02-21
申请人： Postech Foundation , Seoul Opto Devices Co Ltd , ソウルオプトデバイスカンパニーリミテッド , ポステック・ファウンデーション
发明人： LEE JONG-LAM
IPC分类号： H01L33/10 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/44
CPC分类号： H01L33/40 , H01L33/0079 , H01L33/32 , H01L33/387 , H01L33/405 , H01L33/44
摘要： PROBLEM TO BE SOLVED: To provide a vertical type GaN light-emitting element capable of improving characteristic of a horizontal type light-emitting element by a metal protection film layer and a metal support layer, related to a GaN-based compound semiconductor light-emitting element and a method of manufacturing the same.SOLUTION: A thick metal protection film layer of 10 micron or more is formed on the side surface and/or the lower surface of a vertical type GaN-LED, so that an element can be protected from external impact and chip separation can be easily performed. And also, a metal substrate is used instead of a sapphire substrate so that heat that is generated at the time of element operation can be easily released, thereby suitable for use in a high output element. Thus, an element having improved optical output characteristic can be manufactured. A metal support layer is formed so that phenomenon such that the element is distorted at the time of chip separation or damaged by impact can be prevented. A p-type electrode is partially formed in network on a p-GaN, so that radiation of photon formed in an active layer toward an n-GaN layer can be maximized.
摘要翻译：要解决的问题：提供一种能够通过金属保护膜层和金属支撑层改善水平型发光元件的特性的垂直型GaN发光元件，涉及GaN基化合物半导体发光元件及其制造方法。解决方案：在垂直型GaN-LED的侧表面和/或下表面上形成10微米或更厚的厚金属保护膜层，从而可以保护元件免受外部冲击和芯片分离容易执行。而且，使用金属基板代替蓝宝石基板，能够容易地释放元件运转时产生的热量，适合用于高输出元件。因此，可以制造具有改善的光学输出特性的元件。形成金属支撑层，从而可以防止在芯片分离时元件变形或受冲击损坏的现象。 p型电极部分地形成在p-GaN上的网络中，使得在有源层中形成的朝向n-GaN层形成的光子的辐射可以最大化。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2010000077A Immune-modulating peptide 有权
标题翻译：免疫调节肽
公开(公告)号：JP2010000077A
公开(公告)日：2010-01-07
申请号：JP2009164090
申请日：2009-07-10
申请人： Posco , Postech Foundation , ポスコ , ポステックファンデーション
发明人： RYU SUNG-HO , SUH PANN-GHILL , BAE YOE-SIK , SONG JI-YOUNG
IPC分类号： C12N15/09 , A61K38/00 , A61P1/00 , A61P1/02 , A61P1/04 , A61P1/16 , A61P3/10 , A61P7/02 , A61P9/10 , A61P11/00 , A61P11/06 , A61P13/12 , A61P17/06 , A61P17/14 , A61P19/02 , A61P19/06 , A61P19/10 , A61P25/00 , A61P29/00 , A61P31/04 , A61P31/12 , A61P31/18 , A61P35/00 , A61P35/02 , A61P35/04 , A61P37/02 , A61P37/04 , A61P37/06 , C07K5/083 , C07K5/107 , C07K5/11 , C07K7/06
CPC分类号： C07K7/06 , A61K38/00 , C07K5/081 , C07K5/1016 , C07K5/1019 , C12N2799/021
摘要： PROBLEM TO BE SOLVED: To clarify a peptide inducing a number of complicated cell signalings which induce complicated immune responses.
SOLUTION: The peptide having a specific sequence and a group comprising a mixture of such peptides are specified, being such as to induce superoxide generation in human monocytes or neutrophils; induce an intracellular calcium increase by human peripheral blood monocytes or neutrophils; bind to an FPR (formyl peptide receptor) or FPRL1 (formyl peptide receptor-like 1); induce chemotactic migration of human monocytes or neutrophils in vitro; induce degranulation in an FPR expressing cells or FPRL1 expressing cells; stimulate ERK phosphorylation via activation of an FPR or FPRL1; or stimulate Akt phosphorylation via activation of an FPR or an FPRL1.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：澄清诱导许多诱导复杂的免疫应答的复杂细胞信号的肽。具体规定具有特定序列的肽和包含这些肽的混合物的基团，以诱导人单核细胞或嗜中性粒细胞中的超氧化物产生; 诱导人外周血单核细胞或中性粒细胞的细胞内钙增加; 结合FPR（甲酰肽受体）或FPRL1（甲酰肽受体样1）; 在体外诱导人单核细胞或嗜中性粒细胞的趋化迁移; 在表达FPR的细胞或表达FPRL1的细胞中诱导脱颗粒; 通过激活FPR或FPRL1刺激ERK磷酸化; 或通过FPR或FPRL1的激活来刺激Akt磷酸化。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2007051899A Contact type capacitive displacement sensor 审中-公开
标题翻译：接触式电容式位移传感器
公开(公告)号：JP2007051899A
公开(公告)日：2007-03-01
申请号：JP2005236254
申请日：2005-08-17
申请人： Postech Academy-Industry Foundation , Postech Foundation , ポステック・アカデミー‐インダストリー・ファウンデーション , ポステック・ファウンデーション
发明人： MOON WONKYU , KIM MOOJIN
IPC分类号： G01D5/24 , G01D5/245
摘要： PROBLEM TO BE SOLVED: To provide a contact type capacitive displacement sensor of an area change measuring system capable of reducing a mechanical installation error and an error caused by inconsistency between a driving direction and a measuring direction.
SOLUTION: This contact type capacitive displacement sensor of the present invention includes: a fixed element provided with a fixed plate, and a fixed conductive pattern formed on the fixed plate and having a periodic pattern of a conductor; a moving element provided with a moving plate, and a moving conductive pattern formed on the moving plate and having the periodic pattern of the conductor, contacting with the fixed element each other, and movable to be relatively displaced each other; an electric power source for supplying electric power to the sensor; and a signal detecting means for detecting a change of an electric capacity between the fixed element and the moving element. The fixed element and the moving element have respectively insulation films related to the corresponding conductive patterns, and the electric capacity is fluctuated between the fixed conductor and the moving conductor along with fluctuation in an overlapped area therebetween, when the both conductors are moved relatively.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够减少机械安装误差和由驱动方向与测量方向不一致引起的误差的区域变化测量系统的接触式电容式位移传感器。本发明的接触型电容式位移传感器包括：设置有固定板的固定元件和形成在固定板上并且具有导体的周期性图案的固定导电图案; 设置有移动板的移动元件和形成在移动板上并且具有导体的周期性图案的移动导电图案，与固定元件相互接触并且可相对移动相对移动; 用于向传感器供电的电源; 以及信号检测装置，用于检测固定元件和移动元件之间的电容量的变化。固定元件和移动元件分别具有与相应导电图案相关的绝缘膜，并且当两个导体相对移动时，固定导体和移动导体之间的电容随着它们之间的重叠区域的波动而波动。版权所有（C）2007，JPO＆INPIT

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