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    • 9. 发明专利
    • Integrated circuit and apparatus
    • 集成电路和设备
    • JP2013239233A
    • 2013-11-28
    • JP2013161466
    • 2013-08-02
    • Marvell World Trade Ltdマーベル ワールド トレード リミテッド
    • SUTARDJA PANTAS
    • G11C16/06G11C16/02G11C16/04
    • G11C7/1048G11C16/0491G11C16/08G11C16/24G11C2207/002
    • PROBLEM TO BE SOLVED: To provide control devices and a control module in a bit line decoder for sensing states of memory cells of a memory array.SOLUTION: The control devices selectively communicate with bit lines. The control devices are arranged in a multi-level configuration having a plurality of levels, each level having more than one of the control devices. The control module selects from the bit lines a first bit line and a second bit line associated with a memory cell located in the memory array when determining a state of the memory cell. The control module generates first control signals that deselect one or more of the control devices at each level. When one or more control devices at each level are deselected, a first group of the bit lines including the first bit line is charged to a first potential, and a second group of the bit lines including the second bit line is charged to a second potential.
    • 要解决的问题:在位线解码器中提供控制装置和控制模块,用于感测存储器阵列的存储单元的状态。解决方案:控制装置选择性地与位线通信。 控制装置布置成具有多个级别的多级配置,每个级别具有多于一个的控制装置。 当确定存储器单元的状态时,控制模块从位线中选择与位于存储器阵列中的存储单元相关联的第一位线和第二位线。 控制模块产生在每个级别取消选择一个或多个控制装置的第一控制信号。 当取消选择每个级别的一个或多个控制装置时,包括第一位线的第一组位线被充电到第一电位,并且包括第二位线的第二组位线被充电到第二电位 。
    • 10. 发明专利
    • Data recovery in solid state memory device
    • 数据恢复在固态存储器件中
    • JP2013152737A
    • 2013-08-08
    • JP2013058608
    • 2013-03-21
    • Marvell World Trade Ltdマーベル ワールド トレード リミテッド
    • YANG XUESHI
    • G06F12/16
    • G06F11/08G11C11/5642G11C29/00H03M13/1102H03M13/151H03M13/1515H03M13/152H03M13/154H03M13/19H03M13/373H03M13/3746H03M13/451H03M13/458
    • PROBLEM TO BE SOLVED: To provide a configuration and technology for recovering data in a solid state memory device.SOLUTION: The method includes a step 110 of specifying an error of hardware with respect to a cell of the solid state memory device, a step 112 of providing a decoder for recovering the data programmed in the cell originally with a position of the cell having the specified error of hardware, and a step 114 of recovering the data programmed in the cell originally by utilizing the decoder. The method also includes the steps of: reading the data stored in the cell of the solid state memory device by utilizing a corrected reference signal being different from a reference signal used usually in reading data; forming a disappearing flag for marking at least one value of the data read from the cell for disappearance based on the data read from the cell; and decoding the data read from the cell by utilizing the disappearing flag.
    • 要解决的问题:提供用于在固态存储器件中恢复数据的配置和技术。解决方案:该方法包括:指定相对于固态存储器件的单元的硬件错误的步骤110,步骤112 提供一个解码器,用于原来以具有指定的硬件错误的单元的位置来恢复在单元中编程的数据;以及步骤114,原来通过利用解码器来恢复在单元中编程的数据。 该方法还包括以下步骤:通过利用与通常在读取数据中使用的参考信号不同的校正参考信号来读取存储在固态存储器件的单元中的数据; 基于从所述单元读取的数据,形成用于标记从所述单元读取的数据的至少一个值的消失标志; 并通过利用消失标志来解码从小区读取的数据。