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1. 发明申请

WO1993010557A1 METHOD FOR PROCESSING SILICON WAFER 审中-公开
标题翻译：加工硅砂的方法
公开(公告)号：WO1993010557A1
公开(公告)日：1993-05-27
申请号：PCT/JP1992000662
申请日：1992-05-22
申请人： KOMATSU ELECTRONIC METALS CO., LTD.
发明人： KOMATSU ELECTRONIC METALS CO., LTD. , KAWAHARA, Hiroyuki , MOTOURA, Hisami , UEMURA, Noriyuki
IPC分类号： H01L21/322
CPC分类号： H01L21/3225
摘要： A semiconductor silicon wafer having an oxygen concentration of 1x10 to 2x10 atoms/cc and a carbon concentration of 1x10 atoms/cc is heated in an oxidizing atmosphere or in an inert atmosphere at 1,000 to 1,300 DEG C for 0.5 to 5 hours. Alternatively, the wafer main surface is further mirror-polished after this heat-treatment. The present invention aims at reducing defects in the semiconductor wafer and improving a production yield of devices.
摘要翻译：将氧浓度为1×10 17至2×10 18原子/ cc并且碳浓度为1×10 16原子/ cc的半导体硅晶片在氧化气氛或惰性气氛中在1,000至1300℃下加热 0.5〜5小时。或者，在该热处理之后，晶片主表面进行镜面抛光。本发明旨在减少半导体晶片中的缺陷并提高器件的产量。

2. 发明申请

WO1992005578A1 SEMICONDUCTOR DEVICE MANUFACTURING PROCESS 审中-公开
标题翻译：半导体器件制造工艺
公开(公告)号：WO1992005578A1
公开(公告)日：1992-04-02
申请号：PCT/JP1991001205
申请日：1991-09-11
申请人： KOMATSU ELECTRONIC METALS CO., LTD. , KAWAHARA, Hiroyuki , KONO, Mitsuo
发明人： KOMATSU ELECTRONIC METALS CO., LTD.
IPC分类号： H01L21/322
CPC分类号： H01L21/3225
摘要： A semiconductor device manufacturing process characterized in that, when the limit values of wafer warpage and the internal defect density in the device fabrication process are specified in certain ranges for a single-crystal silicon wafer of a substrate according to the conditions of the device yield and the gettering capability, preheating treatment for producing the oxygen precipitation nucleus is applied to a wafer having an initial oxygen concentration capable of simultaneously meeting the above ranges for a heat treatment time simultaneously meeting the range between the upper- and lower-limit values of the initial oxygen concentration and the range of the above internal defect density. The process of the present invention makes it possible to efficiently select a combination of the above conditions for securing the BMD density required to minimize the wafer warpage and to enable the wafer to exhibit the desired gettering capability in a short time not by trial and error.

3. 发明申请

WO1992004840A1 ORNAMENT MADE OF SILICON 审中-公开
标题翻译：硅胶制作
公开(公告)号：WO1992004840A1
公开(公告)日：1992-04-02
申请号：PCT/JP1991001206
申请日：1991-09-11
申请人： KOMATSU ELECTRONIC METALS CO., LTD. , KUMAGAI, Hideo , FUJINUKI, Kenzo , IMAI, Itaru
发明人： KOMATSU ELECTRONIC METALS CO., LTD.
IPC分类号： A44C17/00
CPC分类号： A44C17/007
摘要： A material made of silicon and superior in ornamentality while developing color on the surface of silicon without the use of colorant, which is characterized by forming an oxide film or nitride film on the curved surface of silicon, and, particularly, when using mirror-finished silicon, exhibits excellent effects exceeding brilliance and color of black pearl. Partial etching applied to the oxide film or nitride film ensures an ornament exhibiting a novel taste.
摘要翻译：由硅制成的材料，在不使用着色剂的同时在硅表面上显色而显影，其特征在于在硅的曲面上形成氧化膜或氮化物膜，特别是使用镜面抛光硅，表现出超越亮度和黑色珍珠色的优异效果。施加到氧化物膜或氮化物膜的部分蚀刻确保了具有新颖味道的装饰品。

4. 发明申请

WO1993009565A1 APPARATUS FOR AND METHOD OF MANUFACTURING SEMICONDUCTOR WAFER 审中-公开
标题翻译：装置和制造半导体波形的方法
公开(公告)号：WO1993009565A1
公开(公告)日：1993-05-13
申请号：PCT/JP1992001401
申请日：1992-10-29
申请人： KOMATSU ELECTRONIC METALS CO., LTD. , IWAKIRI, Eiji , FUKUSHIMA, Shingo , TAKITANI, Yukitaka
发明人： KOMATSU ELECTRONIC METALS CO., LTD.
IPC分类号： H01L21/68
CPC分类号： H01L21/67282 , H01L23/544 , H01L2223/54493 , H01L2924/0002 , H01L2924/00
摘要： When an ingot is sliced into wafers, they are given serial numbers for identification. This makes possible to identify which any wafer being processed is of those sliced from the ingot no matter where the wafer is in a manufacturing process. Each wafer is traced so as to determine the path along which the wafer was transferred during the manufacturing process, and results are stored as wafer information.
摘要翻译：当晶锭被切成晶片时，它们被给出序列号用于识别。这使得可以确定哪个正在处理的晶片是从晶锭切片的那些晶片，无论晶片在制造过程中哪里。跟踪每个晶片以便确定晶片在制造过程中沿其传送的路径，结果作为晶片信息存储。

5. 发明申请

WO1993000462A1 DEVICE FOR PULLING UP SINGLE CRYSTAL 审中-公开
标题翻译：用于拉出单晶的装置
公开(公告)号：WO1993000462A1
公开(公告)日：1993-01-07
申请号：PCT/JP1991000849
申请日：1991-06-24
申请人： KOMATSU ELECTRONIC METALS CO., LTD. , TOMIOKA, Junsuke , NAGAI, Kazunori , MATSUZAKI, Akihiro
发明人： KOMATSU ELECTRONIC METALS CO., LTD.
IPC分类号： C30B15/00
CPC分类号： C30B35/00 , C30B15/14 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068
摘要： A device for pulling up a single crystal produced through the Czochralski process, characterized in that: one side thereof facing the quartz crucible is composed of a heat absorbing body whereas the other a heat insulating body; a first cylindrical screen having at upper and lower ends an outwardly directed annular rim and inwardly directed one, respectively, and also having a corner part which faces said crucible and is formed into a curved or polygonal surface is disposed around a single crystal pulling up area with said annular rim at the lower end positioned near an area in which molten material is filled; and a second screen in the shape of parabola at cross-section to open at the central part while surrounding the single crystal pulling up area, and having an outwardly directed annular rim at the upper end is provided inside said first screen, and, thus, the device intends to quickly pull up a single crystal bar while preventing contamination of crystal otherwise caused by impurities and interruption of single-crystallization. A second screen in such a cross-sectional shape as extending along the first screen may be disposed inside the first screen and the second screen may be provided with a forced cooling mechanism.
摘要翻译：一种用于提拉通过切克劳斯基法生产的单晶的装置，其特征在于，其面对石英坩埚的一侧由吸热体组成，而另一侧由绝热体构成; 第一圆柱形屏幕在上端和下端分别具有向外指向的环形边缘和向内指向的环形边缘，并且还具有面向所述坩埚并且形成为弯曲或多边形表面的拐角部分围绕单晶提拉区域其下端处的所述环形边缘位于熔融材料填充区域附近; 并且在所述第一屏幕的内部设置有呈抛物线形状的第二屏幕，所述第二屏幕在横截面处在中心部分处开放，同时围绕所述单晶提拉区域，并且在所述第一屏幕的内侧设置有向外定向的环形边缘，该装置意图快速拉起单晶棒，同时防止由杂质引起的晶体污染和单结晶中断。沿着第一屏幕延伸的这种横截面形状的第二屏幕可以设置在第一屏幕内部，并且第二屏幕可以设置有强制冷却机构。

6. 发明申请

WO1992018672A1 DEVICE AND METHOD FOR GROWING CRYSTAL 审中-公开
标题翻译：用于生长晶体的装置和方法
公开(公告)号：WO1992018672A1
公开(公告)日：1992-10-29
申请号：PCT/JP1991001450
申请日：1991-10-23
申请人： KOMATSU ELECTRONIC METALS CO., LTD. , AKIYAMA, Nobuyuki
发明人： KOMATSU ELECTRONIC METALS CO., LTD.
IPC分类号： C30B15/00
CPC分类号： C30B15/14
摘要： A device and method for growing a crystal which provide a new technique in picking up a crystal to enable control over temperature distribution of a liquid of the melt in the radial direction of the crucible wherein; when a seed crystal is immersed into a material filled in the crucible and melted by a heater as external heating means surrounding said crucible and grown into a crystal while being gradually picked up, a temperature control plate is disposed in a zone above the liquid and around a crystal to be picked up so that, during picking-up of the crystal, a degree of temperature distribution on the liquid may be constantly kept lowest at the solid-liquid interface below the crystal and, at the same time, gradually higher toward the inner wall of the crucible.
摘要翻译：一种用于生长晶体的装置和方法，其提供拾取晶体的新技术，以便能够控制熔体在液体的坩埚的径向方向上的温度分布，其中：当将晶种浸入填充在坩埚中的材料中并被加热器熔化，作为围绕所述坩埚的外部加热装置，并逐渐被拾取而生长成晶体时，温度控制板设置在液体上方的周围要被拾取的晶体，使得在晶体接收期间，在液晶下方的固液界面处，液体上的温度分布程度可以始终保持最低，同时朝着晶体逐渐变高坩埚的内壁。

7. 发明申请

WO1992000245A1 METHOD OF PRODUCING POLYCRYSTALLINE SILICON RODS FOR SEMICONDUCTORS AND THERMAL DECOMPOSITION FURNACE THEREFOR 审中-公开
标题翻译：生产用于半导体的多晶硅芯棒及其热分解炉的方法
公开(公告)号：WO1992000245A1
公开(公告)日：1992-01-09
申请号：PCT/JP1990000833
申请日：1990-06-27
申请人： KOMATSU ELECTRONIC METALS CO., LTD. , YATSURUGI, Yoshifumi , NAGAI, Kenichi , IZAWA, Junji , OHTSUKI, Minoru , MIYAMOTO, Yusuke
发明人： KOMATSU ELECTRONIC METALS CO., LTD.
IPC分类号： C01B33/035
CPC分类号： C23C16/46 , C01B33/035 , C23C16/24
摘要： A method of producing polycrystalline silicon rods of high purity for semiconductors, wherein monosilane gas is thermally decomposed to deposit silicon on a plurality of red-hot silicon filaments which are heated by the current flowing therethrough. The individual red-hot silicon filaments are isolated by a heat-radiation shield. Each pair of the bridge portions for electrical connection with the red-hot silicon filaments is also isolated by a heat-radiation shield. The silicon filaments are U-shaped and each arranged upside down in a unit thermal decomposition chamber which is formed of a pair of cylinders separated by a cooled partition. The legs of each U-shaped filament are positioned on the opposite sides of the partition and in the respective centers of the cylinders. According to such a method and a thermal decomposition furnace, the monosilane gas flows uniformly maintaining a uniform concentration.
摘要翻译：一种半导体制造高纯度多晶硅棒的方法，其中单硅烷气体被热分解，以在由流过其中的电流加热的多个红热硅丝上沉积硅。单个红热硅丝通过热辐射屏蔽隔离。用于与红热硅丝电连接的每对桥接部分也通过热辐射屏蔽隔离。硅丝是U形的，并且每个都是由一个由冷却的隔板隔开的一对圆筒形成的单元热分解室中倒置的。每个U形细丝的腿部位于分隔件的相对侧和气缸的相应中心。根据这种方法和热分解炉，单硅烷气体均匀地流动地保持均匀的浓度。

8. 发明申请

WO1996004412A1 PROCESS FOR PRODUCING DECORATIVE SILICONE 审中-公开
标题翻译：生产装饰性硅胶的方法
公开(公告)号：WO1996004412A1
公开(公告)日：1996-02-15
申请号：PCT/JP1994001265
申请日：1994-08-01
申请人： KOMATSU ELECTRONIC METALS CO., LTD. , KUMAGAI, Hideo , FUJINUKI, Kenzo , IMAI, Itaru
发明人： KOMATSU ELECTRONIC METALS CO., LTD.
IPC分类号： C30B29/06
CPC分类号： C30B29/06 , B44C1/005 , C04B41/4556 , C30B33/00 , C04B41/5035 , C04B41/5338
摘要： A process for producing a decorative silicone which comprises contacting the surface of a mirror-finished silicone with hydrofluoric acid for pretreatment, conducting NH washing (with, e.g., NH4OH-H2O2 or NH4OH-H2O2-H2O), and forming an oxide coating, or which comprises contacting a non-mirror-finished silicone with hydrofluoric acid for pretreatment, conducting alkaline etching (with, e.g., KOH-H2O, NaOH-H2O, NH4OH-H2O, or HN2(CH2)2NH2-H2O-C6H4(OH)2), conducting NH washing, and forming an oxide coating, wherein an oxide coating may be formed after the silicone is processed to have a finished shape. This process can provide a decorative silicone with an excellent decorative effect by effecting color formation on the surface thereof without using any colorant.
摘要翻译：一种装饰性硅树脂的制造方法，其特征在于，将镜面硅胶的表面与氢氟酸接触进行预处理，进行NH洗涤（例如使用NH 4 OH-H 2 O 2或NH 4 OH-H 2 O 2·H 2 O），形成氧化物涂层，或其包括将非镜面抛光硅胶与氢氟酸接触以进行预处理，进行碱性蚀刻（例如用KOH-H 2 O，NaOH-H 2 O，NH 4 OH-H 2 O或HN 2（CH 2）2 NH 2 -H 2 -C 6 H 4（OH）2 ），进行NH洗涤和形成氧化物涂层，其中可以在将硅氧烷加工成具有成品形状之后形成氧化物涂层。该方法可以通过在不使用任何着色剂的情况下在其表面上形成颜色来提供具有优异装饰效果的装饰性硅树脂。

9. 发明申请

WO1994025980A1 CONTAINER FOR PACKING SEMICONDUCTOR WAFER 审中-公开
标题翻译：用于包装半导体滤波器的容器
公开(公告)号：WO1994025980A1
公开(公告)日：1994-11-10
申请号：PCT/JP1994000236
申请日：1994-02-16
申请人： KYUSHU KOMATSU ELECTRONICS CO., LTD. , KOMATSU ELECTRONIC METALS CO., LTD. , KOMATSU PLASTICS INDUSTRIAL CO., LTD. , YAMADA, Naoki , TERADA, Mitsuo , NISHIZAWA, Kiyoshi , UCHIDA, Jun
发明人： KYUSHU KOMATSU ELECTRONICS CO., LTD. , KOMATSU ELECTRONIC METALS CO., LTD. , KOMATSU PLASTICS INDUSTRIAL CO., LTD.
IPC分类号： H01L21/68
CPC分类号： H01L21/67376
摘要： This container has an excellent airtightness, and makes it possible to improve the prevention of the semiconductor wafers packed in it from being contaminated by the air outside. Seal grooves are made in the case of the housing of this container. Gaskets are fitted into the grooves. The case and a cover are fixed by engaging four clips with clip recesses.
摘要翻译：该容器具有优异的气密性，可以提高包装在其中的半导体晶片被外部空气污染的防止。在这个容器的外壳的情况下制作密封槽。垫圈安装在槽中。外壳和盖子通过将四个夹子与夹子凹槽接合而固定。

10. 发明申请

WO1992005579A1 SEMICONDUCTOR WAFER HEAT TREATMENT METHOD 审中-公开
标题翻译：半导体热处理方法
公开(公告)号：WO1992005579A1
公开(公告)日：1992-04-02
申请号：PCT/JP1991001259
申请日：1991-09-20
申请人： KOMATSU ELECTRONIC METALS CO., LTD. , TOMIOKA, Junsuke , AKAGI, Tetsuro , YOSHINO, Shiro
发明人： KOMATSU ELECTRONIC METALS CO., LTD.
IPC分类号： H01L21/322
CPC分类号： H01L21/3225
摘要： A semiconductor wafer heat treatment method for improving the yield of devices which are end products by sampling sliced single-crystal silicon wafers made by CZ method to previously calculate the thermal donor concentration of each portion on the wafers and providing them with the IG heat treatment process which causes oxygen deposit nucleus under the heat treatment condition determined according to the above thermal donor concentration so that the change value (delta Oi) of the initial oxygen concentration (initial Oi) before the IG heat treatment to the oxygen concentration after the heat treatment will be kept within the predetermined range.

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