专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060082442A1 Preambles with relatively unambiguous autocorrelation peak in RFID systems 审中-公开
标题翻译：在RFID系统中具有相对明确的自相关峰值的前导码
公开(公告)号：US20060082442A1
公开(公告)日：2006-04-20
申请号：US10967996
申请日：2004-10-18
申请人： Kurt Sundstrom
发明人： Kurt Sundstrom
IPC分类号： H04Q5/22
CPC分类号： G01S13/756
摘要： RFID tags transmit data preceded by easily detectible preambles, and RFID readers detect such preambles. The preambles of the invention are easily detectible by being specially constructed to have a corresponding autocorrelation diagram with a relatively unambiguous autocorrelation peak. In addition, the preambles may concurrently encode FM0 symbols, while even maintaining a zero mean balance.
摘要翻译： RFID标签在易于检测的前导码之前传输数据，RFID读取器检测这样的前导码。通过专门构造具有相对自相关自相关峰的相应自相关图，可容易地检测到本发明的前序。此外，前导码可以同时编码FM0符号，同时甚至保持零平均平衡。

2. 发明申请

US20060001087A1 Native high-voltage n-channel LDMOSFET in standard logic CMOS 有权
标题翻译：标准逻辑CMOS中的原生高压n沟道LDMOSFET
公开(公告)号：US20060001087A1
公开(公告)日：2006-01-05
申请号：US10884236
申请日：2004-07-02
申请人： Bin Wang
发明人： Bin Wang
IPC分类号： H01L29/76
CPC分类号： H01L29/4983 , H01L29/4916 , H01L29/7835
摘要： A native high-voltage n-channel LDMOSFET includes a p− doped substrate, a first n+ doped region disposed in the p− doped substrate, a source terminal coupled to the first n+ doped region, an n− well disposed in the substrate, a second n+ doped region disposed in the n− well, a drain terminal coupled to the second n+ doped region, a p+ doped region disposed in the substrate, a body terminal coupled to the p+ doped region, a dielectric layer disposed over the p− doped substrate and a portion of the n− well, a first trench disposed in the n− well, the trench filled with a dielectric material that is in contact with the dielectric layer, a second trench disposed at least partially in the n− well, the second trench filled with a dielectric material and isolating the second n+ region from the p+ region, and a gate partially or fully reversely doped with p+ implant (or an equivalent technique) and disposed over the dielectric layer and a portion of the first trench.
摘要翻译：原生高压n沟道LDMOSFET包括p掺杂衬底，设置在p掺杂衬底中的第一n +掺杂区，耦合到第一n +掺杂区的源极，设置在衬底中的n阱，设置在n阱中的第二n +掺杂区域，耦合到第二n +掺杂区域的漏极端子，设置在衬底中的p +掺杂区域，耦合到p +掺杂区域的主体端子，设置在p掺杂区域上的介电层衬底和n阱的一部分，设置在n阱中的第一沟槽，填充有与介电层接触的电介质材料的沟槽，至少部分地设置在n阱中的第二沟槽，填充有电介质材料并且将第二n +区域与p +区域隔离的第二沟槽和部分地或完全地反向掺杂有p +注入（或等效技术）并且设置在电介质层和第一沟槽的一部分上的栅极。

3. 发明申请

US20050237162A1 RFID readers transmitting preambles denoting data rate and methods 有权
标题翻译： RFID阅读器传输前缀，表示数据速率和方法
公开(公告)号：US20050237162A1
公开(公告)日：2005-10-27
申请号：US10890662
申请日：2004-07-13
申请人： John Hyde , Christopher Diorio
发明人： John Hyde , Christopher Diorio
IPC分类号： G06K7/00 , H04Q5/22
CPC分类号： G06K7/0008 , G06K7/10297
摘要： RFID readers transmit data to query tags at one or more data rates. Before transmitting data, the RFID readers also transmit special preambles that inform of the data rate that will be used for transmitting the data. The preambles have a call aspect and a rate aspect. The rate aspect has a feature substantially determined from a rate selected for transmitting the data. The feature may encode the rate indirectly or explicitly. The call aspect may be implemented by call transitions that define a timing, whose duration is independent of the selected rate. The duration may be advantageously set according to an assumed state of the RFID tag bandwidth filter. Therefore an RFID tag may use the call aspect of the preamble to prepare itself for receiving data, and the rate aspect to determine its rate of transmission for setting its filter bandwidth accordingly.
摘要翻译： RFID读取器以一个或多个数据速率将数据传输到查询标签。在发送数据之前，RFID阅读器还传送特定的前导码，通知将用于传输数据的数据速率。前导码具有呼叫方面和速率方面。速率方面具有从选择用于发送数据的速率基本上确定的特征。该特征可以间接地或明确地编码速率。呼叫方面可以通过定义定时的呼叫转换来实现，其持续时间与所选择的速率无关。可以根据RFID标签带宽滤波器的假定状态有利地设置持续时间。因此，RFID标签可以使用前导码的呼叫方面来准备其接收数据，并且速率方面用于确定其传输速率以相应地设置其滤波器带宽。

4. 发明申请

US20050236666A1 Graded-junction high-voltage MOSFET in standard logic CMOS 有权
标题翻译：分级结高压MOSFET在标准逻辑CMOS
公开(公告)号：US20050236666A1
公开(公告)日：2005-10-27
申请号：US10884326
申请日：2004-07-02
申请人： Bin Wang
发明人： Bin Wang
IPC分类号： H01L29/06 , H01L29/10 , H01L29/423 , H01L29/76 , H01L29/78
CPC分类号： H01L29/7835 , H01L29/0653 , H01L29/1045 , H01L29/42368
摘要： A high-voltage graded junction LDMOSFET includes a substrate of a first conductivity type, a well of the first conductivity type disposed in the substrate, a first region of a second conductivity type disposed in the well of the first conductivity type, a source terminal coupled to the first region of the second conductivity type, a well of the second conductivity type disposed in the substrate, a second region of the second conductivity type disposed in the well of the second conductivity type, a drain terminal coupled to the second region of the second conductivity type, a region of the first conductivity type disposed in the substrate, a body terminal coupled to the region of the first conductivity type, a graded-junction region formed of material of the first conductivity type separating the well of the first conductivity type and the well of the second conductivity type, the material of the first conductivity type in the graded-junction region doped at least an order of magnitude less than the wells, a dielectric layer disposed over the well of the first conductivity type, the graded-junction region and a portion of the well of the second conductivity type, a first isolator disposed in the well of the second conductivity type, the isolator including a dielectric material that is in contact with the dielectric layer, a second isolator disposed at least partially in the well of the second conductivity type, the second isolator including a dielectric material and isolating the second region of the second conductivity type from the region of the first conductivity type, and a gate disposed over the dielectric layer and a portion of the first isolator.
摘要翻译：高压梯度结LDMOSFET包括第一导电类型的衬底，设置在衬底中的第一导电类型的阱，设置在第一导电类型的阱中的第二导电类型的第一区域，源极端子耦合到第二导电类型的第一区域，设置在基板中的第二导电类型的阱，设置在第二导电类型的阱中的第二导电类型的第二区域，耦合到第二导电类型的第二区域的漏极端子第二导电类型，设置在基板中的第一导电类型的区域，耦合到第一导电类型的区域的主体端子，由第一导电类型的材料形成的分级接合区域，该第一导电类型的材料将第一导电类型的阱和第二导电类型的阱，掺杂了至少一个数量级的渐变结区域中的第一导电类型的材料小于所述阱的介质层，设置在所述第一导电类型的阱中的介电层，所述渐变接合区域和所述第二导电类型的阱的一部分，设置在所述第二导电类型的阱中的第一隔离器，所述隔离器包括与电介质层接触的电介质材料，至少部分地设置在第二导电类型的阱中的第二隔离器，第二隔离器包括电介质材料，并将第二导电类型的第二区域与第一导电类型和设置在电介质层上的栅极和第一隔离器的一部分。

5. 发明申请

US20050225447A1 RFID readers transmitting preambles denoting communication parameters and RFID tags interpreting the same and methods 有权
标题翻译： RFID读取器传输表示通信参数的前导码和解释相同的方法的RFID标签
公开(公告)号：US20050225447A1
公开(公告)日：2005-10-13
申请号：US10890976
申请日：2004-07-13
申请人： Christopher Diorio , Scott Cooper
发明人： Christopher Diorio , Scott Cooper
IPC分类号： G06K7/00 , G08B13/14 , H04Q5/22
CPC分类号： G06K7/10297 , G06K7/0008
摘要： RFID readers transmit data to query RFID tags. Before transmitting the data, the RFID readers also transmit special preambles that inform of parameters of communication that are to be used. RFID tags decode the preamble, and adjust accordingly to optimize the communication. The preambles of the invention start with a delimiter that has a substantially constant duration regardless of the communication parameters that will be used, such as transmission data rate.
摘要翻译： RFID读取器传输数据以查询RFID标签。在发送数据之前，RFID阅读器还传送特殊的前导码，通知要使用的通信参数。 RFID标签对前导码进行解码，并进行相应调整以优化通信。本发明的前序开始于具有基本上恒定的持续时间的分隔符，而与要使用的通信参数无关，例如传输数据速率。

6. 发明申请

US20050212674A1 RFID tag uncoupling one of its antenna ports and methods 有权
标题翻译： RFID标签解耦其天线端口之一和方法
公开(公告)号：US20050212674A1
公开(公告)日：2005-09-29
申请号：US10891894
申请日：2004-07-14
申请人： Dimitri Desmons , Ronald Oliver , Christopher Diorio , Todd Humes
发明人： Dimitri Desmons , Ronald Oliver , Christopher Diorio , Todd Humes
IPC分类号： G06K19/077 , G08B13/14
CPC分类号： G06K19/07767 , G06K19/07749
摘要： RFID tags have an on-chip antenna and an off-chip antenna. One of the antennas can become uncoupled if the proper signal is received, while the other antenna may still operate. The uncoupled antenna can be the larger one, for example the off-chip antenna. Then the tag can then be read only by the smaller antenna, which effectively reduces the range of the RFID tag, but without disabling it entirely.
摘要翻译： RFID标签具有片上天线和片外天线。如果接收到适当的信号，其中一个天线可能会脱耦，而另一个天线仍然可以工作。非耦合天线可以是较大的天线，例如片外天线。那么标签然后可以被较小的天线读取，这有效地减少了RFID标签的范围，但是没有完全禁用它。

7. 发明申请

US20050063235A1 PFET nonvolatile memory 有权
标题翻译： PFET非易失性存储器
公开(公告)号：US20050063235A1
公开(公告)日：2005-03-24
申请号：US10839985
申请日：2004-05-05
申请人： Alberto Pesavento , Frederic Bernard , John Hyde
发明人： Alberto Pesavento , Frederic Bernard , John Hyde
IPC分类号： G11C16/04 , G11C20060101 , G11C5/00 , G11C7/06 , G11C11/34 , G11C16/02 , G11C16/06 , G11C16/28 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： G11C16/0441 , G11C16/28 , G11C2216/10 , H01L27/115 , H01L29/7883
摘要： A nonvolatile memory cell is constructed using a floating-gate pFET readout transistor having its source tied to a power source (Vdd) and its drain providing a current which can be sensed to determine the state of the cell. The gate of the pFET readout transistor provides for charge storage which can be used to represent information such as binary bits. A control capacitor structure having its first terminal coupled to a first voltage source and its second terminal coupled to the floating gate and a tunneling capacitor structure having its first terminal coupled to a second voltage source and its second terminal coupled to the floating gate are utilized in each embodiment. The control capacitor structure is fabricated so that it has much more capacitance than does the tunneling capacitor structure (and assorted stray capacitance between the floating gate and various other nodes of the cell). Manipulation of the voltages applied to the first voltage source and second voltage source (and Vdd) controls an electric field across the capacitor structure and pFET dielectrics and thus Fowler-Nordheim tunneling of electrons onto and off of the floating gate, thus controlling the charge on the floating gate and the information value stored thereon.
摘要翻译：使用其源极连接到电源（Vdd）的浮栅pFET读出晶体管构造非易失性存储单元，其漏极提供可被感测以确定单元的状态的电流。 pFET读出晶体管的栅极提供电荷存储，可用于表示诸如二进制位之类的信息。一种控制电容器结构，其第一端耦合到第一电压源，其第二端耦合到浮置栅极，并且隧道电容器结构具有耦合到第二电压源的第一端和其耦合到浮置栅极的第二端。各实施例。制造控制电容器结构使得其具有比隧道电容器结构（以及浮动栅极和电池的各种其他节点之间的杂散电容）多得多的电容。对施加到第一电压源和第二电压源（和Vdd）的电压的操纵控制电容器结构和pFET电介质两端的电场，从而使Fowler-Nordheim将电子隧穿到浮栅上和从浮栅上，从而控制电荷浮动门和存储在其上的信息值。

8. 发明申请

US20050030826A1 Method and apparatus for programming single-poly pFET-based nonvolatile memory cells 有权
标题翻译：用于编程基于单多晶硅pFET的非易失性存储单元的方法和装置
公开(公告)号：US20050030826A1
公开(公告)日：2005-02-10
申请号：US10936282
申请日：2004-09-07
申请人： Christopher Diorio , Todd Humes
发明人： Christopher Diorio , Todd Humes
IPC分类号： G11C16/34 , G11C11/34
CPC分类号： G11C16/3468 , G11C16/3404 , G11C16/3472 , G11C16/3477
摘要： Methods and apparatuses for programming a single-poly pFET-based nonvolatile memory cell bias the cell so that band-to-band tunneling (BTBT) is induced and electrons generated by the BTBT are injected onto a floating gate of the cell. Following a predetermined event, the single-poly pFET is biased to induce impact-ionized hot-electron injection (IHEI). The predetermined event may be, for example, the expiration of a predetermined time period or a determination that a channel has been formed by the BTBT injection process that is sufficiently conducting to support IHEI. Employing BTBT permits a previously overerased or stuck bit to be “unstuck” or “removed” and thus be made usable (i.e., able to be programmed) again.
摘要翻译：用于编程基于单多晶硅pFET的非易失性存储单元的方法和装置偏置该单元，从而导致带间隧穿（BTBT），并且由BTBT产生的电子注入到该单元的浮动栅极上。在预定事件之后，单多晶硅pFET被偏置以引起冲击电离热电子注入（IHEI）。预定事件可以是例如预定时间段的到期或通过充分进行支持IHEI的BTBT注入处理形成的信道的确定。使用BTBT允许先前已过度或卡住的位被“解锁”或“移除”，并因此被再次使用（即能够被编程）。

9. 发明申请

US20040124892A1 Use of analog-valued floating-gate transistors to match the electrical characteristics of interleaved and pipelined circuits 有权
标题翻译：使用模拟值浮栅晶体管来匹配交错和流水线电路的电气特性
公开(公告)号：US20040124892A1
公开(公告)日：2004-07-01
申请号：US10681577
申请日：2003-10-07
申请人： Impinj, Inc., a Delaware Corporation
发明人： Christopher J. Diorio , Todd E. Humes , Michael Thomas
IPC分类号： H03B001/00
CPC分类号： G06F1/10 , G11C27/005 , G11C27/024 , H03K5/135 , H03K5/1502 , H03K5/2481 , H03K5/249 , H03K2005/00026 , H03K2005/00058 , H03K2005/00084 , H03M1/0602 , H03M1/1215 , H03M1/164 , H03M1/442
摘要： Methods of and apparatuses for matching the signal delay, clock timing, frequency response, gain, offset, and/or transfer function of signal pathways in electrical circuits such as, for example, time-interleaved and pipelined circuits using analog-valued floating-gate MOSFETs are disclosed. The methods and apparatuses disclosed are applicable to a variety of circuits, including but not limited to, sample-and-hold or track-and-hold circuits, quadrature mixers, analog-to-digital converters (ADCs), digital-to-analog converters (DACs), analog or digital filters, and amplifiers.
摘要翻译：用于使电路中的信号路径的信号延迟，时钟定时，频率响应，增益，偏移和/或传递函数匹配的方法和设备，例如使用模拟值浮动栅极的时间交织和流水线电路公开了MOSFET。所公开的方法和装置适用于各种电路，包括但不限于采样保持或跟踪保持电路，正交混频器，模数转换器（ADC），数模转换器转换器（DAC），模拟或数字滤波器和放大器。

10. 发明申请

US20040052113A1 Method and apparatus for preventing overtunneling in pFET-based nonvolatile memory cells 有权
标题翻译：用于防止基于pFET的非易失性存储单元中的过度隧穿的方法和装置
公开(公告)号：US20040052113A1
公开(公告)日：2004-03-18
申请号：US10245183
申请日：2002-09-16
申请人： Impinj, Inc., a Delaware Corporation
发明人： Christopher J. Diorio , Chad Lindhorst , Shail Srinivas , Alberto Pesavento , Troy Gilliland
IPC分类号： G11C016/04 , G11C011/34
CPC分类号： G11C16/3477 , G11C16/3404 , G11C16/3468 , G11C16/3472
摘要： Methods and apparatuses prevent overtunneling in pFET-based nonvolatile floating gate memory (NVM) cells. During a tunneling process, in which charge carriers are removed from a floating gate of a pFET-based NVM cell, a channel current of a memory cell transistor is monitored and compared to a predetermined minimum channel current required to maintain a conducting channel in an injection transistor of the memory cell. When the monitored channel current drops below the predetermined minimum channel current, charge carriers are injected onto the floating gate by impact-ionized hot-electron injection (IHEI) so that overtunneling is avoided.
摘要翻译：方法和装置可以防止基于pFET的非易失性浮动栅极存储器（NVM）单元中的超导。在其中从基于pFET的NVM单元的浮置栅极去除电荷载流子的隧穿过程中，监测存储单元晶体管的沟道电流，并将其与在注入中维持导通通道所需的预定最小沟道电流进行比较晶体管的存储单元。当监测的通道电流下降到预定的最小通道电流以下时，电荷载流子通过冲击电离热电子注入（IHEI）注入到浮动栅极上，从而避免了超导。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式