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1. 发明申请

WO1988010324A1 IMPROVED REACTION CHAMBERS AND METHODS FOR CVD 审中-公开
标题翻译：改进的反应釜和CVD方法
公开(公告)号：WO1988010324A1
公开(公告)日：1988-12-29
申请号：PCT/US1988002112
申请日：1988-06-17
申请人： EPSILON TECHNOLOGY, INC.
发明人： EPSILON TECHNOLOGY, INC. , OVIAS, Albert, E.
IPC分类号： C23C16/52
CPC分类号： C30B29/06 , C30B25/10
摘要： An epitaxial deposition method for processing a single wafer (45) and a reaction chamber (81) for conducting the method. The chamber (81) has a substantially rectangular cross-section reduced for increased system efficiency. Because the reduced cross-section has insufficient room for a susceptor (43), the susceptor (43), in one embodiment, is mounted within a second portion (29) of a dual height chamber (81) having a greater cross-sectional area. Purge gas supplied through an aperture (41) in the chamber (81) prevents undesirable deposits beneath the susceptor (43) from reactant gas. The velocity profile and flow of reactant gas beneath the susceptor (43) are controlled, for example, by a quartz plate (121) which narrows and simultaneously shapes the gap (125) between the susceptor (43) and the input end (19) of the chamber (81). Two types of reactant gas injectors (103) can be used for controlling the velocity profile of injected gases.
摘要翻译：一种用于处理单晶片（45）和用于进行该方法的反应室（81）的外延沉积方法。室（81）具有减小的基本上矩形的横截面以提高系统效率。由于减小的横截面对于感受器（43）的空间不足，所以在一个实施例中，基座（43）安装在具有较大横截面面积的双高度室（81）的第二部分（29）内。通过腔室（81）中的孔（41）供应的吹扫气体防止基体（43）下方的不希望的沉积物从反应气体中排出。基座（43）下方的反应气体的速度分布和流量例如由石英板（121）控制，石英板（121）使基座（43）和输入端（19）之间的间隙（125）变窄并同时成形，（81）。两种类型的反应气体注入器（103）可用于控制注入气体的速度分布。

2. 发明申请

WO1989003493A1 CHEMICAL VAPOR DEPOSITION SYSTEM 审中-公开
标题翻译：化学蒸气沉积系统
公开(公告)号：WO1989003493A1
公开(公告)日：1989-04-20
申请号：PCT/US1988002113
申请日：1988-06-17
申请人： EPSILON TECHNOLOGY, INC.
发明人： EPSILON TECHNOLOGY, INC. , CRABB, Richard , ROBINSON, Mcdonald , HAWKINS, Mark, R. , GOODWIN, Dennis, L. , FERRO, Armand, P.
IPC分类号： F16K03/314
CPC分类号： C30B29/06 , C30B25/10 , Y10S414/137 , Y10S414/139
摘要： This invention discloses a system (10) for chemically depositing various materials carried by a reactant gas onto substrates (28) for manufacturing semiconductor devices. The system (10) includes special loading and unloading subsystems (12, 14) for placement of substrates (28) to be processed into the system (10) and subsequent extraction without contamination of the system. A special substrate handling subsystem (16) is provided for moving the substrates (28) to and from at least one processing subsystem (15) without physically contacting the planar surfaces of the substrates (28). The processing subsystem (18) includes a horizontal gas flow reaction chamber (240) having a rotatable susceptor (248) therein for rotating the single substrate (28) supportable thereon about an axis that is normal to the center of the substrate for averaging of the temperature and reactant gas concentration variables. The processing subsystem (18) is separated from the handling subsystem (16) by a special isolation valve (176) and a gas injection device (178) is used to inject the gas into the reaction chamber (240) with a predetermined velocity profile. A special temperature sensing arrangement (260) is provided in the processing subsystem (18) for controlling a radiant heating subsystem (272) which is provided above and below the reaction chamber (240).

3. 发明申请

WO1988010322A1 HEATING SYSTEM FOR REACTION CHAMBER OF CHEMICAL VAPOR DEPOSITION EQUIPMENT 审中-公开
标题翻译：化学气相沉积设备反应室加热系统
公开(公告)号：WO1988010322A1
公开(公告)日：1988-12-29
申请号：PCT/US1988002117
申请日：1988-06-17
申请人： EPSILON TECHNOLOGY, INC.
发明人： EPSILON TECHNOLOGY, INC. , ROBINSON, McDonald , OZIAS, Albert, E.
IPC分类号： C23C16/00
CPC分类号： C23C16/481
摘要： A heating system for use in chemical vapor deposition equipment of the type wherein a reactant gas is directed in a horizontal flow for depositing materials on a substrate which is supported in a reaction chamber (10) on a susceptor (20) which is rotatably driven for rotating the substrate about an axis which extends normally from its center. The heating system works in conjunction with a special heat sensing arrangement and includes an upper heating element assembly (32), a lower heating element assembly (34) and a heat concentrator mechanism (36) which interact to provide rapid temperature build-up at the beginning of a processing cycle, rapid temperature attenuation at the end of a processing cycle and a controlled flat temperature profile during the processing cycle.

4. 发明申请

WO1988007487A1 ROTATABLE SUBSTRATE SUPPORTING MECHANISM WITH TEMPERATURE SENSING DEVICE FOR USE IN CHEMICAL VAPOR DEPOSITION EQUIPMENT 审中-公开
标题翻译：具有温度传感装置的可旋转基板支持机构，用于化学蒸气沉积设备
公开(公告)号：WO1988007487A1
公开(公告)日：1988-10-06
申请号：PCT/US1988001041
申请日：1988-03-30
申请人： EPSILON TECHNOLOGY, INC.
发明人： EPSILON TECHNOLOGY, INC. , DE BOER, Wiebe , OZIAS, Albert, E.
IPC分类号： B65G11/00
CPC分类号： C23C16/45521 , B05C11/08 , C23C16/4584 , H01L21/67115 , H01L21/67248 , H01L21/68 , H01L21/68785 , H01L21/68792
摘要： A rotatable substrate supporting mechanism (20) for use in a chemical vapor deposition reaction chamber of the type used in producing semi-conductor devices is provided with a susceptor (30) forsupporting a single substrate (32), or wafer, for rotation about an axis normal to the center of the wafer. The mechanism is provided with a temperature sensing system (130) for producing signals indicative of sensed temperatures taken at the center of the susceptor and at various points about the periphery thereof. A gas purging system (176, 111 ,178) is provided for inhibiting the flow of reactant gas in unwanted areas of the reaction chamber and in the supporting system itself. Rotational driving of the mechanism is accomplished by a variable speed motor (194) under control of a circuit (212) which stops and starts the rotation at controlled speeds and stops the rotation at a homeposition for enhancing the handling of the wafers.

5. 发明申请

WO1989012907A1 WAFER HANDLING SYSTEM WITH BERNOULLI PICK-UP 审中-公开
标题翻译：带有BERNOULLI PICK-UP的波浪处理系统
公开(公告)号：WO1989012907A1
公开(公告)日：1989-12-28
申请号：PCT/US1988002115
申请日：1988-06-17
申请人： EPSILON TECHNOLOGY, INC.
发明人： EPSILON TECHNOLOGY, INC. , GOODWIN, Dennis, L. , CRABB, Richard , ROBINSON, McDonald , FERRO, Armand, P.
IPC分类号： H01J37/20
CPC分类号： H01L21/67742 , B25J9/107 , B25J19/0029 , B25J21/005 , H01L21/6838
摘要： An improved wafer handling system is disclosed. The system includes a pair of robot arms (41) each having a drive apparatus (101) coupled to its rear end portion for extending, retracting and rotatably positioning the robot arms (41). The opposite ends of the robot arms (41) are connected to a pick-up wand (43). Gas is delivered under pressure through passages (191, 185, 203, 221) in the robot arms (41) to the pick-up wand (43) where additional passages (319, 323, 325, 327, 329, 331) direct the gas to outlets (360, 361, 362, 363, 364, 365, 366, 367) which, in turn, direct the gas radially outward and downward against a wafer (81). In accordance with the Bernoulli Principle, this gas flow creates a region of low pressure between the pick-up wand (43) and the wafer (81), enabling the wand (43) to pick-up the wafer (81) without physical contact. A center relief hole (368) directs a flow of gas substantially perpendicularly to the top surface of the wafer (81) for eliminating the vacuum effect and reducing turbulence. Filters (229) can be placed within the hollow passages (203) in the robot arms (41) for filtering particles out of the gas and a final filter (261) can be operatively disposed between the front end portion of the robot arms (41) and the inlet of the pick-up wand (43).
摘要翻译：公开了一种改进的晶片处理系统。该系统包括一对机器人臂（41），每个机械手臂具有联接到其后端部分的驱动装置（101），用于使机器人手臂（41）伸出，缩回和可旋转地定位。机器人臂（41）的相对端连接到拾取棒（43）。气体在压力下通过机器人臂（41）中的通道（191,185,203,221）传送到拾取棒（43），其中附加通道（319,323,325,327,329,331）引导气体输送到出口（360,361,362,363,364,365,366,367），其又将气体径向向外和向下引导抵靠晶片（81）。根据伯努利原理，该气流在拾取棒（43）和晶片（81）之间产生低压区域，使得棒（43）能够在没有物理接触的情况下拾取晶片（81）。中心释放孔（368）引导基本上垂直于晶片（81）的顶表面的气体流，以消除真空效应并减少湍流。过滤器（229）可以放置在机器人手臂（41）中的中空通道（203）内，用于从气体中过滤颗粒，并且最终过滤器（261）可以可操作地设置在机器人臂（41）的前端部分）和拾取棒（43）的入口。

6. 发明授权

US5318634A Substrate supporting apparatus 失效
标题翻译：基板支撑装置
公开(公告)号：US5318634A
公开(公告)日：1994-06-07
申请号：US655731
申请日：1991-02-14
申请人： Wiebe B. deBoer , Albert E. Ozias
发明人： Wiebe B. deBoer , Albert E. Ozias
IPC分类号： C23C16/44 , B05C11/08 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/205 , H01L21/31 , H01L21/68 , H01L21/687 , C23C16/54
CPC分类号： C23C16/45521 , B05C11/08 , C23C16/4584 , H01L21/67115 , H01L21/67248 , H01L21/68 , H01L21/68785 , H01L21/68792
摘要： A rotatable shaft supports and imparts rotary motion to a susceptor supporting spider to locate the susceptor and any substrate mounted thereon within a reaction chamber during a CVD process. The spider includes a plurality of radially extending arms having upwardly directed pegs for engaging cavities in the underside of the susceptor and a hub for interconnection with the rotatable shaft.
摘要翻译：旋转轴支撑并向基座支撑蜘蛛提供旋转运动，以在CVD过程期间将基座和安装在其上的任何基板定位在反应室内。星形架包括多个径向延伸的臂，其具有向上指向的钉，用于接合基座的下侧中的空腔和用于与可旋转轴互连的毂。

7. 发明授权

US5020475A Substrate handling and transporting apparatus 失效
标题翻译：基板处理和运输装置
公开(公告)号：US5020475A
公开(公告)日：1991-06-04
申请号：US315723
申请日：1989-02-24
申请人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro
发明人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro
IPC分类号： C30B25/02 , C30B25/10
CPC分类号： C30B29/06 , C30B25/10
摘要： A substrate loading subsystem receives substrates from an external source and delivers them to an input port. A substrate pickup transports the substrates serially from the input port to a delivery port of a processing subsystem wherein the substrates are subjected to a reactant gas in a reaction chamber. After completion of the chemical vapor deposition, the substrate pick up serially transports the substrates to an outlet port wherefrom they are off loaded.
摘要翻译：衬底加载子系统从外部源接收衬底并将其传送到输入端口。基板拾取器将基板从输入端口顺序地输送到处理子系统的输送端口，其中基板在反应室中经受反应气体。在化学气相沉积完成之后，衬底拾取器将衬底串联地输送到出口端口，在那里它们被卸载。

8. 发明授权

US4993355A Susceptor with temperature sensing device 失效
标题翻译：感受器带有感温装置
公开(公告)号：US4993355A
公开(公告)日：1991-02-19
申请号：US339310
申请日：1989-04-17
申请人： Wiebe B. deBoer , Albert E. Ozias
发明人： Wiebe B. deBoer , Albert E. Ozias
IPC分类号： B05C11/08 , C23C16/44 , C23C16/455 , H01L21/00 , H01L21/68
CPC分类号： C23C16/45521 , B05C11/08 , H01L21/67115 , H01L21/68
摘要： A rotatable substrate supporting mechanism for use in a chemical vapor deposition reaction chamber of the type used in producing semi-conductor devices is provided with a susceptor for supporting a single substrate, or wafer, for rotation about an axis normal to the center of the wafer. The mechanism is provided with a temperature sensing system for producing signals indicative of sensed temperatures taken at the center of the susceptor and at various points about the periphery thereof. A gas purging system is provided for inhibiting the flow of reactant gas in unwanted areas of the reaction chamber and in the supporting system itself. Rotational driving of the mechanism is accomplished by a variable speed motor under control of a circuit which stops and starts the rotation at controlled speeds and stops the rotation at a home position for enhancing the handling of the wafers.
摘要翻译：在用于制造半导体器件的类型的化学气相沉积反应室中使用的可旋转衬底支撑机构设置有用于支撑单个衬底或晶片的基座，用于围绕垂直于晶片中心的轴线旋转。该机构设置有温度感测系统，用于产生指示在基座的中心处以及在其周边的各个点处拍摄的感测温度的信号。提供了一种气体净化系统，用于抑制反应室的不需要的区域和支撑系统本身中的反应气体的流动。该机构的旋转驱动是通过一个电动机控制下的可变速电动机实现的，该电路以受控的速度停止并开始转动，并且在原始位置停止旋转以增强晶片的处理。

9. 发明授权

US5117769A Drive shaft apparatus for a susceptor 失效
标题翻译：用于感受器的驱动轴装置
公开(公告)号：US5117769A
公开(公告)日：1992-06-02
申请号：US539062
申请日：1990-06-15
申请人： Wiebe B. deBoer , Albert E. Ozias
发明人： Wiebe B. deBoer , Albert E. Ozias
IPC分类号： B05C11/08 , C23C16/44 , C23C16/455 , H01L21/00 , H01L21/68
CPC分类号： C23C16/45521 , B05C11/08 , H01L21/67115 , H01L21/68
摘要： A hollow drive shaft mounted within a tubular shaft depending from a reaction chamber supports a substrate receiving susceptor to effect rotation of the susceptor.
摘要翻译：安装在从反应室悬挂的管状轴内的中空驱动轴支撑基板接收基座以实现基座的旋转。

10. 发明授权

US4828224A Chemical vapor deposition system 失效
标题翻译：化学气相沉积系统
公开(公告)号：US4828224A
公开(公告)日：1989-05-09
申请号：US108771
申请日：1987-10-15
申请人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro , Albert E. Ozias , Wiebe B. deBoer
发明人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro , Albert E. Ozias , Wiebe B. deBoer
IPC分类号： C23C16/44 , C23C16/54 , C30B25/02 , C30B25/10 , H01L21/205 , H01L21/31
CPC分类号： C30B29/06 , C30B25/10 , Y10S414/137 , Y10S414/139
摘要： This invention discloses a system for chemically depositing various materials carried by a reactant gas onto substrates for manufacturing semiconductor devices. The system includes special loading and unloading sub-system for placement of substrates to be processed into the system and subsequent extraction without contamination of the system. A special substrate handling sub-system is provided for moving the substrates to and from at least one processing sub-system without physically contacting the planar surfaces of the substrates. The processing sub-system includes a horizontal gas flow reaction chamber having a rotatable susceptor therein for rotating the single substrate supportable thereon about an axis that is normal to the center of the substrate for averaging of the temperature and reactant gas concentration variables. The processing sub-system is separated from the handling sub-system by a special isolation valve and a gas injection device is used to inject the gas into the reaction chamber with a predetermined velocity profile. A special temperature sensing arrangement is provided in the processing sub-system for controlling a radiant heating sub-system which is provided above and below the reaction chamber.
摘要翻译：本发明公开了一种用于将由反应气体承载的各种材料化学沉积到用于制造半导体器件的衬底上的系统。该系统包括专用的装载和卸载子系统，用于将要处理的基板放置在系统中，随后提取而不会污染系统。提供了一种特殊的基板处理子系统，用于将基板移动到至少一个处理子系统并且从至少一个处理子系统移动，而不物理地接触基板的平面表面。处理子系统包括水平气流反应室，其中具有可旋转的基座，用于使可支撑在其上的单个基板绕垂直于基板中心的轴线旋转，以平均温度和反应气体浓度变量。处理子系统通过特殊隔离阀与处理子系统分离，并且气体注入装置用于以预定的速度分布将气体注入反应室。在处理子系统中设置有用于控制设置在反应室上方和下方的辐射加热子系统的特殊温度检测装置。

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