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1. 发明授权

US4828224A Chemical vapor deposition system 失效
标题翻译：化学气相沉积系统
公开(公告)号：US4828224A
公开(公告)日：1989-05-09
申请号：US108771
申请日：1987-10-15
申请人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro , Albert E. Ozias , Wiebe B. deBoer
发明人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro , Albert E. Ozias , Wiebe B. deBoer
IPC分类号： C23C16/44 , C23C16/54 , C30B25/02 , C30B25/10 , H01L21/205 , H01L21/31
CPC分类号： C30B29/06 , C30B25/10 , Y10S414/137 , Y10S414/139
摘要： This invention discloses a system for chemically depositing various materials carried by a reactant gas onto substrates for manufacturing semiconductor devices. The system includes special loading and unloading sub-system for placement of substrates to be processed into the system and subsequent extraction without contamination of the system. A special substrate handling sub-system is provided for moving the substrates to and from at least one processing sub-system without physically contacting the planar surfaces of the substrates. The processing sub-system includes a horizontal gas flow reaction chamber having a rotatable susceptor therein for rotating the single substrate supportable thereon about an axis that is normal to the center of the substrate for averaging of the temperature and reactant gas concentration variables. The processing sub-system is separated from the handling sub-system by a special isolation valve and a gas injection device is used to inject the gas into the reaction chamber with a predetermined velocity profile. A special temperature sensing arrangement is provided in the processing sub-system for controlling a radiant heating sub-system which is provided above and below the reaction chamber.
摘要翻译：本发明公开了一种用于将由反应气体承载的各种材料化学沉积到用于制造半导体器件的衬底上的系统。该系统包括专用的装载和卸载子系统，用于将要处理的基板放置在系统中，随后提取而不会污染系统。提供了一种特殊的基板处理子系统，用于将基板移动到至少一个处理子系统并且从至少一个处理子系统移动，而不物理地接触基板的平面表面。处理子系统包括水平气流反应室，其中具有可旋转的基座，用于使可支撑在其上的单个基板绕垂直于基板中心的轴线旋转，以平均温度和反应气体浓度变量。处理子系统通过特殊隔离阀与处理子系统分离，并且气体注入装置用于以预定的速度分布将气体注入反应室。在处理子系统中设置有用于控制设置在反应室上方和下方的辐射加热子系统的特殊温度检测装置。

2. 发明授权

US5020475A Substrate handling and transporting apparatus 失效
标题翻译：基板处理和运输装置
公开(公告)号：US5020475A
公开(公告)日：1991-06-04
申请号：US315723
申请日：1989-02-24
申请人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro
发明人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro
IPC分类号： C30B25/02 , C30B25/10
CPC分类号： C30B29/06 , C30B25/10
摘要： A substrate loading subsystem receives substrates from an external source and delivers them to an input port. A substrate pickup transports the substrates serially from the input port to a delivery port of a processing subsystem wherein the substrates are subjected to a reactant gas in a reaction chamber. After completion of the chemical vapor deposition, the substrate pick up serially transports the substrates to an outlet port wherefrom they are off loaded.
摘要翻译：衬底加载子系统从外部源接收衬底并将其传送到输入端口。基板拾取器将基板从输入端口顺序地输送到处理子系统的输送端口，其中基板在反应室中经受反应气体。在化学气相沉积完成之后，衬底拾取器将衬底串联地输送到出口端口，在那里它们被卸载。

3. 发明授权

US5435682A Chemical vapor desposition system 失效
标题翻译：化学气相沉积系统
公开(公告)号：US5435682A
公开(公告)日：1995-07-25
申请号：US255114
申请日：1994-06-07
申请人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro , Wiebe B. deBoer , Albert E. Ozias
发明人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro , Wiebe B. deBoer , Albert E. Ozias
IPC分类号： C30B25/02 , C30B25/10 , A61K27/02
CPC分类号： C30B29/06 , C30B25/10 , Y10S414/135 , Y10S414/137 , Y10S414/139
摘要： This invention discloses a system for chemically depositing various materials carried by a reactant gas onto substrates for manufacturing semiconductor devices. The system includes special loading and unloading sub-systems for placement of substrates to be processed into the system and subsequent extraction without contamination of the system. A special substrate handling sub-system is provided for moving the substrates to and from at least one processing sub-system without physically contacting the planar surfaces of the substrates. The processing sub-system includes a horizontal gas flow reaction chamber having a rotatable susceptor therein for rotating the single substrate supportable thereon about an axis that is normal to the center of the substrate for averaging of the temperature and reactant gas concentration variables. The processing sub-system is separated from the handling sub-system by a special isolation valve and a gas injection device is used to inject the gas into the reaction chamber with a predetermined velocity profile. A special temperature sensing arrangement is provided in the processing sub-system for controlling a radiant heating sub-system which is provided above and below the reaction chamber.
摘要翻译：本发明公开了一种用于将由反应气体承载的各种材料化学沉积到用于制造半导体器件的衬底上的系统。该系统包括特殊的装载和卸载子系统，用于将要处理的基板放置到系统中，随后提取而不会污染系统。提供了一种特殊的基板处理子系统，用于将基板移动到至少一个处理子系统并且从至少一个处理子系统移动，而不物理地接触基板的平面表面。处理子系统包括水平气流反应室，其中具有可旋转的基座，用于使可支撑在其上的单个基板绕垂直于基板中心的轴线旋转，以平均温度和反应气体浓度变量。处理子系统通过特殊隔离阀与处理子系统分离，并且气体注入装置用于以预定的速度分布将气体注入反应室。在处理子系统中设置有用于控制设置在反应室上方和下方的辐射加热子系统的特殊温度检测装置。

4. 发明授权

US5156521A Method for loading a substrate into a GVD apparatus 失效
标题翻译：将基板装载到GVD装置中的方法
公开(公告)号：US5156521A
公开(公告)日：1992-10-20
申请号：US720750
申请日：1991-06-25
申请人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro
发明人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro
IPC分类号： C30B25/02 , C30B25/10
CPC分类号： C30B29/06 , C30B25/10
摘要： A method for loading a substrate into a receiving chamber upon a positionable platform, which platform is in sealed relationship with the receiving chamber, permits purging of the receiving chamber prior to transport of the loaded substrate(s) to a feed chamber. The platform is positioned from the receiving chamber into the feed chamber to off load the substrates. A cassette containing a plurality of stacked substrates may be loaded upon the platform to transport a plurality of substrates into the feed chamber.
摘要翻译：一种将基板装载到接收室中的方法，所述定位平台与所述接收室处于密封关系中，所述定位平台允许在将所加载的基板运送到进料室之前清洗所述接收室。平台从接收室定位到进料室中以卸载基板。可以将包含多个堆叠的基板的盒子装载到平台上以将多个基板输送到进料室中。

5. 发明授权

US5092728A Substrate loading apparatus for a CVD process 失效
标题翻译：用于CVD工艺的基板装载装置
公开(公告)号：US5092728A
公开(公告)日：1992-03-03
申请号：US315332
申请日：1989-02-24
申请人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro , Wiebe B. deBoer , Albert E. Ozias
发明人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro , Wiebe B. deBoer , Albert E. Ozias
IPC分类号： C30B25/02 , C30B25/10
CPC分类号： C30B29/06 , C30B25/10
摘要： Each substrate is loaded into a receiving chamber upon a positionable platform, which platform is in sealed relationship with the receiving chamber to permit purging of the receiving chamber prior to transport of the loaded substrate(s) to a feed chamber. The platform is positioned from the receiving chamber into the feed chamber wherefrom the substrates are off loaded. A cassette containing a plurality of stacked substrates may be loaded upon the platform to transport a plurality of substrates into the feed chamber.
摘要翻译：每个基板在可定位的平台上被装载到接收室中，该平台与接收室处于密封关系，以便在将所加载的基底运送到进料室之前清洗接收室。平台从接收室定位到进料室中，从而将基板卸载。可以将包含多个堆叠的基板的盒子装载到平台上以将多个基板输送到进料室中。

6. 发明授权

US5080549A Wafer handling system with Bernoulli pick-up 失效
标题翻译：带有伯努利拾取的晶圆处理系统
公开(公告)号：US5080549A
公开(公告)日：1992-01-14
申请号：US547463
申请日：1990-07-02
申请人： Dennis L. Goodwin , Richard Crabb , McDonald Robinson , Armand P. Ferro
发明人： Dennis L. Goodwin , Richard Crabb , McDonald Robinson , Armand P. Ferro
IPC分类号： B25J9/10 , B25J15/06 , H01L21/683
CPC分类号： B25J15/0616 , B25J9/107 , H01L21/6838 , Y10S414/139 , Y10S414/141
摘要： Wafer handling apparatus operating under the Bernoulli principle to pick up, transport and deposit wafers, which apparatus includes a plate having a plurality of laterally oriented outlets and a central outlet for discharging gas in a pattern sufficient to develop a low pressure enviroment to pick up the wafer while bathing the wafer in radially outflowing gases to prevent intrusion and deposition on the wafer of particulate matter in suspension.
摘要翻译：在伯努利原理下操作的晶片处理设备用于拾取，运输和沉积晶片，该装置包括具有多个横向定向的出口的板，以及用于以足以形成低压环境的气体排出气体的中心出口同时将晶片浸泡在径向流出的气体中，以防止在悬浮液中颗粒物质的晶片上的侵入和沉积。

7. 发明授权

US5324155A Wafer handling system with bernoulli pick-up 失效
标题翻译：晶圆处理系统与bernoulli拾起
公开(公告)号：US5324155A
公开(公告)日：1994-06-28
申请号：US819098
申请日：1992-01-09
申请人： Dennis L. Goodwin , Richard Crabb , McDonald Robinson , Armand P. Ferro
发明人： Dennis L. Goodwin , Richard Crabb , McDonald Robinson , Armand P. Ferro
IPC分类号： B25J9/10 , B25J15/06 , H01L21/683 , B65H5/08
CPC分类号： B25J15/0616 , B25J9/107 , H01L21/6838 , Y10S414/139 , Y10S414/141
摘要： An improved wafer handling system including a pair of robot arms each having a drive apparatus operatively coupled to its rear end portion for extending, retracting, and rotatably positioning the robot arms. The opposite end of the robot arms are operatively connected to a pick-up wand. The pick-up wand includes a top plate and a bottom plate. The lower surface of the top plate has a plurality of commonly-connected grooves ground therein and a reservoir for supplying gas to said grooves from the forward end portion of the robot arms. A plurality of gas outlets are provided in the bottom plate, and the bottom surface of the top plate is positioned securely over and flush against the top surface of the bottom plate such that at least one of the grooves are over each of the plurality of gas outlets for delivering gas thereto. The outlets are slanted for substantially radially outwardly directing a flow of gas away from the pattern and over the top surface of the water for creating an area of relatively low pressure between the bottom surface of the lower pick-up plate and the top surface of the wafer (with respect to the pressure existing beneath the wafer) for picking up or lifting the wafer without physical contact between the wafer and the wand in the actual pick-up by utilizing Bernoulli's Principle.
摘要翻译：一种改进的晶片处理系统，包括一对机器人臂，每个机械臂具有可操作地联接到其后端部分的驱动装置，用于伸出，缩回和可旋转地定位机器人手臂。机器人手臂的相对端可操作地连接到拾取棒。拾取棒包括顶板和底板。顶板的下表面具有多个共同连接的凹槽，其中存储有用于从机器人臂的前端部分向所述凹槽提供气体的储存器。多个气体出口设置在底板中，并且顶板的底表面牢固地定位在底板的顶表面上并与底板的顶表面齐平，使得至少一个凹槽位于多个气体中的每一个上用于输送气体的出口。出口被倾斜以基本上径向向外引导气体流离开图案并在水的顶部表面上，以在下部拾取板的底表面和下部拾取板的顶部表面之间产生相对较低压力的区域晶片（相对于存在于晶片下方的压力），用于通过利用伯努利原理在实际拾取中拾取或提升晶片而不会在晶片和棒之间的物理接触。

8. 发明授权

US4874464A Process for epitaxial deposition of silicon 失效
标题翻译：硅外延沉积工艺
公开(公告)号：US4874464A
公开(公告)日：1989-10-17
申请号：US167347
申请日：1988-03-14
申请人： Dennis L. Goodwin , Mark R. Hawkins , Wayne L. Johnson , Aage Olsen , McDonald Robinson
发明人： Dennis L. Goodwin , Mark R. Hawkins , Wayne L. Johnson , Aage Olsen , McDonald Robinson
IPC分类号： C30B25/02 , C30B25/10 , C30B29/06 , H01L21/205
CPC分类号： C30B29/06 , C30B25/10 , Y10S438/905
摘要： The present invention relates to a high throughput single crystal epitaxial deposition process which achieves increased uniformity, both wafer to wafer and across the wafer surface. There is provided an epitaxial deposition process characterized by low-level cooling periods which minimize temperature changes between deposition cycles and inter-cycle cleaning so that each new wafer is presented with a substantially equivalent deposition environment.
摘要翻译：本发明涉及一种高通量单晶外延沉积工艺，其实现了晶片与晶片和晶圆表面之间的均匀性的提高。提供了一种外延沉积工艺，其特征在于低水平冷却时间，其使沉积循环和循环间清洁之间的温度变化最小化，使得每个新晶片呈现基本相同的沉积环境。

9. 发明授权

US5819684A Gas injection system for reaction chambers in CVD systems 失效
标题翻译： CVD系统中反应室的气体注入系统
公开(公告)号：US5819684A
公开(公告)日：1998-10-13
申请号：US661461
申请日：1996-06-10
申请人： Mark R. Hawkins , McDonald Robinson
发明人： Mark R. Hawkins , McDonald Robinson
IPC分类号： C23C16/455 , C30B25/14 , C23C16/00
CPC分类号： C30B25/14 , C23C16/455
摘要： The present invention relates to improved injectors for use in CVD reactor systems, and more specifically for use in epitaxial deposition systems for processing a single wafer-at-a-time. The improved injectors of the present invention are used to provide a predetermined desired shaped velocity profile for the injected reactant gases for insuring a more uniform deposition on a single wafer to be processed within the reactor system. In the first embodiment, the reactant gas is fed into a horizontal gas distribution manifold cavity and distributed horizontally in both directions. The gas then passes through a manifold wall having a pattern of predetermined sized and spaced apertures therein. The size of the apertures and the distribution of these sizes, shapes the resultant velocity profile to a desired pattern. Since the volume flow rate through each aperture of the manifold member increases as the diameter of the aperture increases, the resultant velocity profile produced will have its maximum at the center where the largest apertures exist and its minimum at the sides where the smallest apertures exist and the velocity profile will have a desired predetermined shape as it exits the gas delivery chamber and is turned 90.degree. for injection into the input of the reaction chamber. In an alternate embodiment, a plurality of linearly dimensioned slots are provided between spacer legs for producing the predetermined desired shaped velocity profile.
摘要翻译：本发明涉及用于CVD反应器系统的改进喷射器，更具体地涉及用于一次处理单个晶片的外延沉积系统。本发明的改进的喷射器用于为注入的反应气体提供预定的期望的成形速度分布，以确保在反应器系统内待处理的单个晶片上更均匀的沉积。在第一实施例中，反应气体被供给到水平气体分配歧管腔中，并且沿两个方向水平分布。然后气体通过其中具有预定尺寸和间隔开的孔的图案的歧管壁。孔的尺寸和这些尺寸的分布将合成的速度分布形成期望的图案。由于通过歧管构件的每个孔口的体积流量随着孔径的增加而增加，所产生的合成速度分布将在存在最大孔径的中心处具有最大值，并且在存在最小孔隙的侧面处其最小值; 当离开气体输送室时，速度分布将具有期望的预定形状，并且转动90°以注入反应室的输入。在替代实施例中，在间隔腿之间提供多个线性尺寸的狭槽，用于产生预定的所需成形速度分布。

10. 发明授权

US5525157A Gas injectors for reaction chambers in CVD systems 失效
标题翻译： CVD系统中反应室的气体注入器
公开(公告)号：US5525157A
公开(公告)日：1996-06-11
申请号：US514420
申请日：1995-08-11
申请人： Mark R. Hawkins , McDonald Robinson
发明人： Mark R. Hawkins , McDonald Robinson
IPC分类号： C23C16/455 , C30B25/14 , C23C16/00
CPC分类号： C30B25/14 , C23C16/455
摘要： The present invention relates to improved injectors for use in CVD reactor systems, and more specifically for use in epitaxial deposition systems for processing a single wafer-at-a-time. The improved injectors of the present invention are used to provide a predetermined desired shaped velocity profile for the injected reactant gases for insuring a more uniform deposition on a single wafer to be processed within the reactor system. In the first embodiment, the reactant gas is fed into a horizontal gas distribution manifold cavity and distributed horizontally in both directions. The gas then passes through a manifold wall having a pattern of predetermined sized and spaced apertures therein. The size of the apertures and the distribution of these sizes, shapes the resultant velocity profile to a desired pattern. Since the volume flow rate through each aperture of the manifold member increases as the diameter of the aperture increases, the resultant velocity profile produced will have its maximum at the center where-the largest apertures exist and its minimum at the sides where the smallest apertures exist and the velocity profile will have a desired predetermined shape as it exits the gas delivery chamber and is turned 90 for injection into the input of the reaction chamber. In an alternate embodiment, a plurality of linearly dimensioned slots are provided between spacer legs for producing the predetermined desired shaped velocity profile.
摘要翻译：本发明涉及用于CVD反应器系统的改进喷射器，更具体地涉及用于一次处理单个晶片的外延沉积系统。本发明的改进的喷射器用于为注入的反应气体提供预定的期望的成形速度分布，以确保在反应器系统内待处理的单个晶片上更均匀的沉积。在第一实施例中，反应气体被供给到水平气体分配歧管腔中，并且沿两个方向水平分布。然后气体通过其中具有预定尺寸和间隔开的孔的图案的歧管壁。孔的尺寸和这些尺寸的分布将合成的速度分布形成期望的图案。由于通过歧管构件的每个孔的体积流量随着孔径的增加而增加，所产生的合成速度分布将在其中存在最大孔的中心处具有最大值，并且在存在最小孔的侧面处的最小孔并且速度分布在其离开气体输送室时将具有期望的预定形状，并且转动90以注入反应室的输入。在替代实施例中，在间隔腿之间提供多个线性尺寸的狭槽，用于产生预定的所需成形速度分布。

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