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1. 发明授权

KR850000902B1 박막 트랜지스터 失效
公开(公告)号：KR850000902B1
公开(公告)日：1985-06-26
申请号：KR840004146
申请日：1984-07-14
申请人： ENERGY CONVERSION DEVICES INC
发明人： HOLRIMBUG SCOAT H , PLASK RICHARD A
IPC分类号： G11C17/00 , G11C13/00 , H01L21/331 , H01L21/8229 , H01L21/8247 , H01L23/525 , H01L27/06 , H01L27/102 , H01L27/105 , H01L27/24 , H01L29/04 , H01L29/167 , H01L29/68 , H01L29/73 , H01L29/78 , H01L29/786 , H01L29/788 , H01L29/792 , H01L29/861 , H01L45/00

2. 发明授权

KR840000756B1 P-형 반도체 합금 제조방법 失效
公开(公告)号：KR840000756B1
公开(公告)日：1984-05-31
申请号：KR810001678
申请日：1981-05-15
申请人： ENERGY CONVERSION DEVICES INC
发明人： OVSHINSKY STANFORD R , IZU MASATSUGU , CANNELLA VINCENT D
IPC分类号： H01L31/04 , C23C16/517 , C23C16/54 , H01L21/205 , H01L27/142 , H01L31/046 , H01L31/16 , H01L31/18

3. 发明授权

KR860001179B1 촉매체 失效
公开(公告)号：KR860001179B1
公开(公告)日：1986-08-25
申请号：KR810001599
申请日：1981-05-08
申请人： ENERGY CONVERSION DEVICES INC
发明人： OVSHINSKY STANFORD R , SAPRU KRISHNA
IPC分类号： B01J23/20 , B01J23/24 , B01J23/36 , B01J23/40 , B01J23/74 , B01J23/755 , B01J23/84 , B01J23/85 , B01J35/02 , B01J37/02 , B01J37/06 , C22C9/00 , C22C14/00 , C22C19/00 , C22C27/04 , C22C45/00 , C22C45/04 , C22F1/00 , C25B11/04 , C25B11/06 , C25B11/10 , H01M4/86 , H01M4/90 , H01M4/98

4. 发明授权

KR850001045B1 A PROGRAMMABLE CELL FOR USE IN PROGRAMMABLE ELECTRONIC ARRAYS 失效
公开(公告)号：KR850001045B1
公开(公告)日：1985-07-19
申请号：KR800004727
申请日：1980-12-12
申请人： ENERGY CONVERSION DEVICES INC
发明人： HOLMBERG SCITT H , FLASCK RICHARD A
IPC分类号： G11C17/00 , G11C13/00 , H01L21/331 , H01L21/8229 , H01L21/8247 , H01L23/525 , H01L27/06 , H01L27/102 , H01L27/105 , H01L27/24 , H01L29/04 , H01L29/167 , H01L29/68 , H01L29/73 , H01L29/78 , H01L29/786 , H01L29/788 , H01L29/792 , H01L29/861 , H01L45/00
摘要： A programmable memory cell has a doped amorphous material alloy that can be irreversibly converted into a conducting state for use in programmable electronic arrays, such as PROM devices, logical arrys, gate arrays and die-bonding arrays. This cell comprises an amorphous cell body, said body including a memory portion having a doped amorphous silicon alloy therein, which can be set or made non- resettable. The alloy portion has a highly nonconductive state that can be altered into a highly conductive state.

5. 发明授权

KR860002031B1 광응답 비정질 합금을 최적화하는 방법 및 디바이스 失效
公开(公告)号：KR860002031B1
公开(公告)日：1986-11-15
申请号：KR810003326
申请日：1981-09-07
申请人： ENERGY CONVERSION DEVICES INC
发明人： OVSHINSKY STANFORD , IZU MASACHUKU
IPC分类号： H01L31/04 , C23C14/00 , C23C14/06 , C23C14/32 , C23C16/22 , C23C16/44 , G03G5/08 , H01L21/20 , H01L29/16 , H01L31/0376 , H01L31/076 , H01L31/18 , H01L31/20

6. 发明授权

KR840001605B1 박막 트랜지스터 失效
公开(公告)号：KR840001605B1
公开(公告)日：1984-10-11
申请号：KR800004728
申请日：1980-12-12
申请人： ENERGY CONVERSION DEVICES INC
发明人： FLASCK RICHARD A , HOLMBERG SCOTT H
IPC分类号： G11C17/00 , G11C13/00 , H01L21/331 , H01L21/8229 , H01L21/8247 , H01L23/525 , H01L27/06 , H01L27/102 , H01L27/105 , H01L27/24 , H01L29/04 , H01L29/167 , H01L29/68 , H01L29/73 , H01L29/78 , H01L29/786 , H01L29/788 , H01L29/792 , H01L29/861 , H01L45/00

7. 发明专利

JP2010045037A Large area microwave plasma apparatus with adaptable applicator 审中-公开
标题翻译：大面积微波等离子体设备与适应适应器
公开(公告)号：JP2010045037A
公开(公告)日：2010-02-25
申请号：JP2009211797
申请日：2009-09-14
申请人： Energy Conversion Devices Inc , エナージーコンバーションデバイセスインコーポレイテッドEnergy Conversion Devices, Inc.
发明人： DOEHLER JOACHIM
IPC分类号： H05H1/46 , C23C16/511 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
CPC分类号： H01J37/32229 , H01J37/32192
摘要： PROBLEM TO BE SOLVED: To provide a microwave plasma apparatus for sustaining substantially uniform plasma over a relatively large area, easily adaptable for usage in a various microwave frequencies. SOLUTION: The large area microwave plasma apparatus is composed of: a vacuum vessel 12 for sustaining plasma in plasma regions 20, 20a; a means in the vacuum vessel 12 for supporting a substrate in parallel with the plasma regions 20, 20a; a means for sustaining the vacuum vessel 12 at a desired pressure; means 18, 18a for introducing action gas into the vacuum vessel 12; a non-evanescent microwave applicator 40 with a means for controlling cutoff wavelength, wherein at least part of the microwave applicator 40 extends into the vacuum vessel 12 and irradiates microwave energy from a power source into the vacuum vessel 12; and a means 60 for gas-insulating the applicator 40 from the plasma regions 20, 20a. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种微波等离子体装置，用于在相对较大的区域上维持基本上均匀的等离子体，容易适用于各种微波频率的使用。解决方案：大面积微波等离子体装置包括：用于在等离子体区域20,20a中维持等离子体的真空容器12; 在真空容器12中用于与等离子体区域20,20a平行地支撑衬底的装置; 用于在期望压力下维持真空容器12的装置; 用于将动作气体引入真空容器12的装置18,18a; 具有用于控制截止波长的装置的非消逝微波施加器40，其中微波施加器40的至少一部分延伸到真空容器12中并将来自电源的微波能量照射到真空容器12中; 以及用于将施涂器40从等离子体区域20,20a进行气体绝缘的装置60。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2004003033A Plasma enhanced chemical vapor deposition method 有权
公开(公告)号：JP2004003033A
公开(公告)日：2004-01-08
申请号：JP2003185572
申请日：2003-06-27
申请人： Energy Conversion Devices Inc , エナージー・コンバーション・デバイセス・インコーポレーテッド
发明人： IZU MASATSUGU , DOTTER BUDDIE R II , OVSHINSKY STANFORD R , HASEGAWA WATARU
IPC分类号： C23C16/42 , B65D65/42 , C23C16/02 , C23C16/40 , C23C16/50 , C23C16/511 , C23C16/54 , H01J37/32 , H05H1/46
CPC分类号： H01J37/32211 , B65D65/42 , C23C16/0209 , C23C16/0245 , C23C16/401 , C23C16/402 , C23C16/511 , C23C16/545 , H01J37/32192 , H01J37/3277
摘要： PROBLEM TO BE SOLVED: To enable simultaneous vapor deposition for many times on a low temperature substrate material and vapor deposition of soft covering having impermeability to oxygen and water vapor of a thin film on a low temperature web by substantially eliminating the covering of an applicator separation means by a vapor deposition material and also passing the same through the inside of a system for one time. SOLUTION: In the plasma enhanced chemical vapor deposition method, oxygen and water vapor barrier covering is vapor-deposited on a temperature sensitivity substrate from a precursor gaseous mixture at least comprising a silicon-containing gas and an oxygen-containing gas by plasma enhanced chemical vapor deposition. The method is characterized by the improved process of a stage wherein, prior to a microwave vapor deposition stage, the temperature sensitivity substrate is subjected to plasma pretreatment; and a stage wherein an oxygen-containing gas with a sufficient flow rate is introduced into the precursor gaseous mixture, and the formation of a silicon-hydrogen bond in the vapor deposition covering is removed. COPYRIGHT: (C)2004,JPO

9. 发明专利

JP2941860B2 DEVICE FOR GRINDING HYDROGEN STORAGE SUBSTANCE WHICH FORMS METAL HYDRIDE 失效
公开(公告)号：JP2941860B2
公开(公告)日：1999-08-30
申请号：JP24783889
申请日：1989-09-22
申请人： ENERGY CONVERSION DEVICES INC
发明人： MAIKERU EI FUECHIENKO , TOOMASU KAATSU , SUTEIIBUN PII SAMUNAA , JIYOOJIFU RAROTSUKA
IPC分类号： B22F9/02 , B22F9/04 , C01B3/00 , H01M4/38

10. 发明专利

JPH0856007A OPTICAL FILTER AND WINDSHIELD GLASS THAT GENERATE ELECTRIC POWER 失效
公开(公告)号：JPH0856007A
公开(公告)日：1996-02-27
申请号：JP18745795
申请日：1995-07-24
申请人： ENERGY CONVERSION DEVICES INC , CANON KK
发明人： SUTANFUOODO AARU OBUSHINSUKII
IPC分类号： G02B5/20 , G02B5/28 , G03B11/00 , H01L31/0224 , H01L31/04 , H01L31/048 , H01L31/052 , H01L31/076
摘要： PROBLEM TO BE SOLVED: To filter the light of specified wavelength and to generate power at the same time, by providing a means, which has a transparent conductive layer provided on a transparent substrate, optical electromotive force layer provided on the transparent conductive layer, and transparent conductive layer provided on the optical electromotive force, for generating heat by supplying a current from the outside between the transparent conductive layers. SOLUTION: A filter 30 is composed of a transparent substrate 32, transparent conductive electrode 34 on the substrate 32, main body 36 of optical electromotive force material electrically connected with this electrode 34, and transparent electrode 38 electrically connected with this main body 36. Then, the main body 36 is composed of the array of p-i-n or n-i-p type optical electromotive force cells, respective optical electromotive force cells 1a, 1b and 1c are composed of amorphous or fine crystal optical electromotive force bodies containing Si alloy and further, the respective main bodies are composed of p-type conduction areas 3a, 3b and 3c, true conduction areas 4a, 4b and 4c, and n-type conduction areas 5a, 5b and 5c. Thus, light filtering, power generation and electrification heating are enabled.

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