专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

KR850001045B1 A PROGRAMMABLE CELL FOR USE IN PROGRAMMABLE ELECTRONIC ARRAYS 失效
公开(公告)号：KR850001045B1
公开(公告)日：1985-07-19
申请号：KR800004727
申请日：1980-12-12
申请人： ENERGY CONVERSION DEVICES INC
发明人： HOLMBERG SCITT H , FLASCK RICHARD A
IPC分类号： G11C17/00 , G11C13/00 , H01L21/331 , H01L21/8229 , H01L21/8247 , H01L23/525 , H01L27/06 , H01L27/102 , H01L27/105 , H01L27/24 , H01L29/04 , H01L29/167 , H01L29/68 , H01L29/73 , H01L29/78 , H01L29/786 , H01L29/788 , H01L29/792 , H01L29/861 , H01L45/00
摘要： A programmable memory cell has a doped amorphous material alloy that can be irreversibly converted into a conducting state for use in programmable electronic arrays, such as PROM devices, logical arrys, gate arrays and die-bonding arrays. This cell comprises an amorphous cell body, said body including a memory portion having a doped amorphous silicon alloy therein, which can be set or made non- resettable. The alloy portion has a highly nonconductive state that can be altered into a highly conductive state.

2. 发明授权

KR840001605B1 박막 트랜지스터 失效
公开(公告)号：KR840001605B1
公开(公告)日：1984-10-11
申请号：KR800004728
申请日：1980-12-12
申请人： ENERGY CONVERSION DEVICES INC
发明人： FLASCK RICHARD A , HOLMBERG SCOTT H
IPC分类号： G11C17/00 , G11C13/00 , H01L21/331 , H01L21/8229 , H01L21/8247 , H01L23/525 , H01L27/06 , H01L27/102 , H01L27/105 , H01L27/24 , H01L29/04 , H01L29/167 , H01L29/68 , H01L29/73 , H01L29/78 , H01L29/786 , H01L29/788 , H01L29/792 , H01L29/861 , H01L45/00

3. 发明申请

WO1982002640A1 UNIVERSAL INTERCONNECTION SUBSTRATE 审中-公开
标题翻译：通用互连基板
公开(公告)号：WO1982002640A1
公开(公告)日：1982-08-05
申请号：PCT/US1981001725
申请日：1981-12-22
申请人： JOHNSON ROBERT ROYCE , ENERGY CONVERSION DEVICES INC
发明人： JOHNSON ROBERT ROYCE , ENERGY CONVERSION DEVICES INC , STOPPER HERBERT , FLASCK RICHARD A
IPC分类号： H05K01/18
CPC分类号： H05K1/0289 , H01L2224/49171
摘要： A wafer substrate for integrated circuits (1) which by itself may be made either of conductive or non-conductive material. This substrate carries two planes or layers of patterned metal (19, 20), thus providing two principal levels of interconnection. An insulation layer (21) is placed between the metal layers and also between the lower metal layer and the substrate if the latter is conductive. Connections between the metal layers or between the metal layer and the substrate can be made through via holes in the insulator layer or layers, respectively. The real estate provided by the substrate (1) is divided up into special areas used for inner cells (2) outer cells (3) signal hookup areas (4) and power hookup areas (5). The cells are intended to host the integrated circuit chips (24, 25) and to provide the bonding pads (8) for the signal connections between the chips and the substrate.
摘要翻译：用于集成电路（1）的晶片衬底本身可以由导电材料或非导电材料制成。该衬底承载有图案化金属（19,20）的两个平面或层，从而提供两个主要级联的互连。绝缘层（21）放置在金属层之间，并且如果后者是导电的，则也位于下金属层和衬底之间。金属层之间或金属层与基板之间的连接可以分别通过绝缘体层中的通孔形成。由基板（1）提供的空间被分成用于内部单元（2）外部单元（3）信号连接区域（4）和电力连接区域（5）的特殊区域。电池用于承载集成电路芯片（24,25）并提供用于芯片和衬底之间的信号连接的接合焊盘（8）。

4. 发明专利

IT1194002B 未知
公开(公告)号：IT1194002B
公开(公告)日：1988-08-31
申请号：IT2664480
申请日：1980-12-12
申请人： ENERGY CONVERSION DEVICES INC
发明人： HOLMBERG SCOTT H , FLASCK RICHARD A
IPC分类号： H01L27/24 , H01L29/68 , H01L29/861 , G06F
摘要： A programmable cell for use in programmable electronic arrays such as PROM devices, logic arrays, gate arrays and die interconnect arrays. The cells have a highly non-conductive state settable and substantially non-resettable into a highly conductive state. The cells have a resistance of 10,000 ohms or more in the non-conductive state which are settable into the conductive state by a threshold voltage of 20 volts or less, a current of 25 milliamps or less, for 1000 microseconds or less. The cells in the conductive state have a resistance of 500 ohms or less. The cells have a maximum permittable processing temperature of 200 DEG centigrade or more and a storage temperature of 175 DEG centigrade or more. The cells can be formed from chalcogenide elements, such as germanium tellurium and selenium or combination thereof. The cells also can be formed from tetrahedral elements, such as silicon, germanium and carbon or combinations thereof. Each cell in an array is a thin film deposited cell and includes an isolating device which can be a bipolar or MOS device or can be a thin film diode or transistor. The associated addressing circuitry also can be conventional bipolar or MOS devices or thin film deposited devices. The cells have a cell area of less than one square mil to provide a high cell packing density.

5. 发明专利

MX153275A 未知
公开(公告)号：MX153275A
公开(公告)日：1986-09-08
申请号：MX18980881
申请日：1981-10-26
申请人： ENERGY CONVERSION DEVICES INC
发明人： HOLMBERG SCOTT H , FLASCK RICHARD A
IPC分类号： G11C17/00 , H01L21/8229 , H01L21/8246 , H01L27/10 , H01L27/102 , H01L27/105 , H01L27/112 , H01L27/24 , H01L29/68 , H01L29/861 , H01L45/00 , G06G7/48
摘要： An improved programmable cell for use in programmable electronic arrays such as PROM devices, logic arrays, gate arrays and die interconnect arrays. The cells have a highly non-conductive state settable and non-resettable into a highly conductive state. The cells have a resistance of 10,000 ohms or more in the non-conductive state which are settable into the conductive state by a threshold voltage of 10 volts or less, a current of 25 milliamps or less, for 100 microseconds or less. The cells in the conductive state have a resistance of 100 ohms or less. The cells have a maximum permittable processing temperature of 400 DEG centigrade or more and a storage temperature of 175 DEG centigrade or more. The cells are formed from doped silicon alloys including at least hydrogen and/or fluorine and contain from about 0.1 to 5 percent dopant. The cells can be plasma deposited from silane or silicon tetrafluoride and hydrogen with 20 to 150,000 ppm of dopant. Each cell in an array is a thin film deposited cell and includes an isolating device which can be a bipolar or MOS device or can be a thin film diode or transistor. The associated addressing circuitry also can be conventional bipolar or MOS devices or thin film deposited devices. The cells have a cell area of less than one square mil to provide a high cell packing density.

6. 发明专利

AU543740B2 DIODE 未知
公开(公告)号：AU543740B2
公开(公告)日：1985-05-02
申请号：AU6531580
申请日：1980-12-12
申请人： ENERGY CONVERSION DEVICES INC
发明人： HOLMBERG SCOTT H , FLASCK RICHARD A
IPC分类号： G11C17/00 , G11C13/00 , H01L21/331 , H01L21/8229 , H01L21/8247 , H01L23/525 , H01L27/06 , H01L27/102 , H01L27/105 , H01L27/24 , H01L29/04 , H01L29/167 , H01L29/68 , H01L29/73 , H01L29/78 , H01L29/786 , H01L29/788 , H01L29/792 , H01L29/861 , H01L45/00 , H01L23/52 , H01L29/14
摘要： Diode comprises at least one first region and one second region abutting to form a junction, the first region being made from an amorphous cpd. contg. Si and F, and pref. H, the cpd. having a compsn. SiaFbHc where a is 80-98%, b is 0-10% and c is 0-10%. The first region is pref. n-conductivity type doped with a dopant in an amt. of between a few ppm and 5 atom.% pref. P or As, and the second region is a metal, alloy or similar material forming a high barrier on the first region to produce a Schottky barrier. Pref. the metal of the second region is Au, Pt, Pd or Cr and/or alloys of Si and F. Also claimed are read only memory devices utilising these diodes. The diode exhibits a large no. of unsatd. bonds in the Si hence a reduced density of localised states in the band gap and corresp. improved electronic properties.

7. 发明专利

AU526351B2 PROGRAMMABLE CELL FOR ELECTRONIC ARRAY 未知
公开(公告)号：AU526351B2
公开(公告)日：1983-01-06
申请号：AU6531480
申请日：1980-12-12
申请人： ENERGY CONVERSION DEVICES INC
发明人： HOLMBERG SCOTT H , FLASCK RICHARD A
IPC分类号： H01L27/24 , H01L29/68 , H01L29/861 , H01L23/52 , H01L27/08 , H01L27/10
摘要： A programmable cell for use in programmable electronic arrays such as PROM devices, logic arrays, gate arrays and die interconnect arrays. The cells have a highly non-conductive state settable and substantially non-resettable into a highly conductive state. The cells have a resistance of 10,000 ohms or more in the non-conductive state which are settable into the conductive state by a threshold voltage of 20 volts or less, a current of 25 milliamps or less, for 1000 microseconds or less. The cells in the conductive state have a resistance of 500 ohms or less. The cells have a maximum permittable processing temperature of 200 DEG centigrade or more and a storage temperature of 175 DEG centigrade or more. The cells can be formed from chalcogenide elements, such as germanium tellurium and selenium or combination thereof. The cells also can be formed from tetrahedral elements, such as silicon, germanium and carbon or combinations thereof. Each cell in an array is a thin film deposited cell and includes an isolating device which can be a bipolar or MOS device or can be a thin film diode or transistor. The associated addressing circuitry also can be conventional bipolar or MOS devices or thin film deposited devices. The cells have a cell area of less than one square mil to provide a high cell packing density.

8. 发明专利

DE3141967A1 未知
公开(公告)号：DE3141967A1
公开(公告)日：1982-06-16
申请号：DE3141967
申请日：1981-10-22
申请人： ENERGY CONVERSION DEVICES INC
发明人： HOLMBERG SCOTT H , FLASCK RICHARD A
IPC分类号： G11C17/00 , H01L21/8229 , H01L21/8246 , H01L27/10 , H01L27/102 , H01L27/105 , H01L27/112 , H01L27/24 , H01L29/68 , H01L29/861 , H01L45/00 , G11C11/34 , G11C7/00 , H01L49/02
摘要： An improved programmable cell for use in programmable electronic arrays such as PROM devices, logic arrays, gate arrays and die interconnect arrays. The cells have a highly non-conductive state settable and non-resettable into a highly conductive state. The cells have a resistance of 10,000 ohms or more in the non-conductive state which are settable into the conductive state by a threshold voltage of 10 volts or less, a current of 25 milliamps or less, for 100 microseconds or less. The cells in the conductive state have a resistance of 100 ohms or less. The cells have a maximum permittable processing temperature of 400 DEG centigrade or more and a storage temperature of 175 DEG centigrade or more. The cells are formed from doped silicon alloys including at least hydrogen and/or fluorine and contain from about 0.1 to 5 percent dopant. The cells can be plasma deposited from silane or silicon tetrafluoride and hydrogen with 20 to 150,000 ppm of dopant. Each cell in an array is a thin film deposited cell and includes an isolating device which can be a bipolar or MOS device or can be a thin film diode or transistor. The associated addressing circuitry also can be conventional bipolar or MOS devices or thin film deposited devices. The cells have a cell area of less than one square mil to provide a high cell packing density.

9. 发明专利

DE3046701A1 未知
公开(公告)号：DE3046701A1
公开(公告)日：1981-10-15
申请号：DE3046701
申请日：1980-12-11
申请人： ENERGY CONVERSION DEVICES INC
发明人： HOLMBERG SCOTT H , FLASCK RICHARD A
IPC分类号： G11C17/00 , G11C13/00 , H01L21/331 , H01L21/8229 , H01L21/8247 , H01L23/525 , H01L27/06 , H01L27/102 , H01L27/105 , H01L27/24 , H01L29/04 , H01L29/167 , H01L29/68 , H01L29/73 , H01L29/78 , H01L29/786 , H01L29/788 , H01L29/792 , H01L29/861 , H01L45/00 , H01L29/24 , H01L29/86 , G11C11/40
摘要： Diode comprises at least one first region and one second region abutting to form a junction, the first region being made from an amorphous cpd. contg. Si and F, and pref. H, the cpd. having a compsn. SiaFbHc where a is 80-98%, b is 0-10% and c is 0-10%. The first region is pref. n-conductivity type doped with a dopant in an amt. of between a few ppm and 5 atom.% pref. P or As, and the second region is a metal, alloy or similar material forming a high barrier on the first region to produce a Schottky barrier. Pref. the metal of the second region is Au, Pt, Pd or Cr and/or alloys of Si and F. Also claimed are read only memory devices utilising these diodes. The diode exhibits a large no. of unsatd. bonds in the Si hence a reduced density of localised states in the band gap and corresp. improved electronic properties.

10. 发明专利

FR2475295A1 Diode comprising two regions - of which one comprises a cpd. of silicon and fluorine 未知
公开(公告)号：FR2475295A1
公开(公告)日：1981-08-07
申请号：FR8026401
申请日：1980-12-12
申请人： ENERGY CONVERSION DEVICES INC
发明人： HOLMBERG SCOTT H , FLASCK RICHARD A
IPC分类号： G11C17/00 , G11C13/00 , H01L21/331 , H01L21/8229 , H01L21/8247 , H01L23/525 , H01L27/06 , H01L27/102 , H01L27/105 , H01L27/24 , H01L29/04 , H01L29/167 , H01L29/68 , H01L29/73 , H01L29/78 , H01L29/786 , H01L29/788 , H01L29/792 , H01L29/861 , H01L45/00 , H01L27/02 , G11C11/36 , G11C17/06
摘要： Diode comprises at least one first region and one second region abutting to form a junction, the first region being made from an amorphous cpd. contg. Si and F, and pref. H, the cpd. having a compsn. SiaFbHc where a is 80-98%, b is 0-10% and c is 0-10%. The first region is pref. n-conductivity type doped with a dopant in an amt. of between a few ppm and 5 atom.% pref. P or As, and the second region is a metal, alloy or similar material forming a high barrier on the first region to produce a Schottky barrier. Pref. the metal of the second region is Au, Pt, Pd or Cr and/or alloys of Si and F. Also claimed are read only memory devices utilising these diodes. The diode exhibits a large no. of unsatd. bonds in the Si hence a reduced density of localised states in the band gap and corresp. improved electronic properties.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式