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1. 发明授权

US5914522A Power semiconductor structure with lateral transistor driven by vertical transistor 失效
标题翻译：功率半导体结构，横向晶体管由垂直晶体管驱动
公开(公告)号：US5914522A
公开(公告)日：1999-06-22
申请号：US859024
申请日：1997-05-20
申请人： Natale Aiello , Davide Patti , Salvatore Leonardi , Salvatore Scaccianoce
发明人： Natale Aiello , Davide Patti , Salvatore Leonardi , Salvatore Scaccianoce
IPC分类号： H01L29/73 , H01L21/331 , H01L21/8224 , H01L21/8228 , H01L21/8249 , H01L27/06 , H01L27/07 , H01L27/082 , H01L29/732 , H01L29/00 , H01L27/102
CPC分类号： H01L27/0821 , H01L27/0722
摘要： A power semiconductor structure (200), in particular in VIPower technology, made from a chip of N-type semiconductor material (110), comprising a bipolar or field-effect vertical power transistor (125, 120, 110) having a collector or drain region in such N-type material (110); the semiconductor structure comprises a PNP bipolar lateral power transistor (210, 110, 220) having a base region in such N-type material (110) substantially in common with the collector or drain region of the vertical power transistor.
摘要翻译：一种功率半导体结构（200），特别是在VIPower技术中，由N型半导体材料（110）的芯片制成，包括具有集电极或漏极的双极或场效应垂直功率晶体管（125,120,110）这种N型材料（110）中的区域; 该半导体结构包括PNP双极侧向功率晶体管（210,110,220），其具有基本上与垂直功率晶体管的集电极或漏极区共同的N型材料（110）中的基极区域。

2. 发明授权

US5668508A Oscillator circuit having oscillation frequency independent from the supply voltage value 失效
标题翻译：振荡电路的振荡频率与电源电压值无关
公开(公告)号：US5668508A
公开(公告)日：1997-09-16
申请号：US623613
申请日：1996-03-29
申请人： Francesco Pulvirenti , Riccardo Ursino , Roberto Gariboldi
发明人： Francesco Pulvirenti , Riccardo Ursino , Roberto Gariboldi
IPC分类号： H03F3/45 , H03K3/011 , H03K3/0231 , H03K3/354 , H03K4/06 , H03K19/0948
CPC分类号： H03K3/011 , H03K3/0231 , H03K3/354
摘要： An oscillating circuit including a capacitor, a charge circuitry and a control circuitry. The charge circuitry includes first and second current generators having respectively first and second current values that are opposite in direction and a switching circuit designed to couple alternately the generators to the capacitor. The control circuitry has a voltage input coupled to the capacitor and an output coupled to control inputs of the switching circuit and includes a comparator with hysteresis having a lower threshold and an upper threshold. The difference between the upper threshold and the lower threshold is chosen to be substantially proportional to the ratio of the product to the sum of the two current values such that the oscillation frequency and the duty cycle do not depend on the supply voltage, the temperature and the process.
摘要翻译：一种包括电容器，充电电路和控制电路的振荡电路。充电电路包括分别具有与方向相反的第一和第二电流值的第一和第二电流发生器以及设计成将发电机交替耦合到电容器的开关电路。控制电路具有耦合到电容器的电压输入和耦合到开关电路的控制输入的输出，并且包括具有较低阈值和较高阈值的迟滞的比较器。上限阈值和下限阈值之间的差异被选择为与产品与两个电流值之和的比例基本上成比例，使得振荡频率和占空比不依赖于电源电压，温度和的过程。

3. 发明授权

US6060762A Integrated structure with reduced injection of current between homologous regions 失效
标题翻译：整合结构，减少同源区域之间的电流注入
公开(公告)号：US6060762A
公开(公告)日：2000-05-09
申请号：US855212
申请日：1997-05-13
申请人： Salvatore Scaccianoce , Stefano Sueri
发明人： Salvatore Scaccianoce , Stefano Sueri
IPC分类号： H01L21/8224 , H01L27/082 , H01L29/00
CPC分类号： H01L27/0828 , H01L27/0821
摘要： An integrated semiconductor structure comprises two homologous P-type regions formed within an N-type epitaxial layer. A P-type region formed in the portion of the epitaxial layer disposed between the two P-type regions includes within it an N-type region. This N region is electrically connected to the P region by means of a surface metal contact. The structure reduces the injection of current between the first and second P regions, at the same time preventing any vertical parasitic transistors from being switched on.
摘要翻译：集成半导体结构包括在N型外延层内形成的两个同源P型区。形成在设置在两个P型区域之间的外延层的部分中的P型区域在其内包括N型区域。该N区通过表面金属接触与P区电连接。该结构减少了在第一和第二P区之间的电流注入，同时防止任何垂直寄生晶体管接通。

4. 发明授权

US5821829A Integrated circuit waith automatic compensation for deviations of the capacitances from nominal values 失效
标题翻译：集成电路，具有自动补偿电容与标称值的偏差
公开(公告)号：US5821829A
公开(公告)日：1998-10-13
申请号：US810032
申请日：1997-03-04
申请人： Melchiorre Bruccoleri , Gaetano Cosentino , Marco Demicheli , Valerio Pisati
发明人： Melchiorre Bruccoleri , Gaetano Cosentino , Marco Demicheli , Valerio Pisati
IPC分类号： H03L7/099 , H03K3/281 , H03L7/00
CPC分类号： H03L7/0805 , H03L7/099
摘要： The system includes various circuit units each having a capacitor and a charging circuit for defining a quantity depending upon the ratio (I/C) between the charging current and the capacitance of the capacitors. In order to compensate automatically for deviations of the actual capacitances from the nominal capacitances due to fluctuations in the parameters of the integrated-circuit manufacturing process, the system has a phase-locked loop which uses one of the circuit units as an adjustable oscillator, and current transducer means which regulates the charging currents of the capacitors of the circuit units in dependence on the regulated charging current of the capacitor of the oscillator, or the error current of the PLL loop.
摘要翻译：该系统包括各自具有电容器的电路单元和用于根据充电电流和电容器的电容之间的比率（I / C）定义量的充电电路。为了自动补偿由于集成电路制造过程的参数波动引起的实际电容与标称电容的偏差，系统具有使用电路单元之一作为可调谐振荡器的锁相环，以及电流传感器装置，其根据振荡器的电容器的调节的充电电流或PLL环路的误差电流来调节电路单元的电容器的充电电流。

5. 发明授权

US5764460A Circuit for the protection against overcurrents in power electronic devices and corresponding method 失效
标题翻译：电力电子设备过流保护电路及相应的方法
公开(公告)号：US5764460A
公开(公告)日：1998-06-09
申请号：US771539
申请日：1996-12-23
申请人： Leonardo Perillo , Giuseppe Scilla
发明人： Leonardo Perillo , Giuseppe Scilla
IPC分类号： G05F1/569 , H03F1/52 , H02H7/00
CPC分类号： G05F1/569 , H03F1/52
摘要： A circuit for protecting from overload currents includes an electronic power device having at least first and second terminals and at least one control terminal. The circuit also includes at least one voltage-generating circuit for generating a reference voltage having a predetermined pattern. The voltage-generating circuit includes at least a first terminal connected to the first terminal of the power device and at least a second terminal coupled to the second terminal of the power device through a sensor. The circuit also preferably includes at least one comparator for comparing the reference voltage with a voltage present across the sensor. The comparator has at least one output terminal and at least first and second input terminals. The first and second input terminals are respectively connected to a third terminal of the voltage-generating circuit and the second terminal of the power device. The circuit also includes at least one current limiter having at least a first terminal connected to the control terminal of the power device, at least a second terminal connected to the second terminal of the voltage-generating circuit, and at least one control terminal connected to the output terminal of the comparator.
摘要翻译：用于防止过载电流的电路包括具有至少第一和第二端子以及至少一个控制端子的电子功率器件。该电路还包括用于产生具有预定图案的参考电压的至少一个电压产生电路。电压发生电路至少包括连接到功率器件的第一端子的第一端子和至少一个通过传感器耦合到功率器件的第二端子的第二端子。电路还优选地包括至少一个用于将参考电压与传感器两端存在的电压进行比较的比较器。比较器具有至少一个输出端子和至少第一和第二输入端子。第一和第二输入端子分别连接到电压发生电路的第三端子和功率器件的第二端子。电路还包括至少一个限流器，其至少具有连接到电力设备的控制端的第一端子，至少连接到电压发生电路的第二端子的第二端子，以及至少一个控制端子，连接到比较器的输出端子。

6. 发明授权

US5665994A Integrated device with a bipolar transistor and a MOSFET transistor in an emitter switching configuration 失效
标题翻译：具有双极晶体管的集成器件和发射极开关配置中的MOSFET晶体管
公开(公告)号：US5665994A
公开(公告)日：1997-09-09
申请号：US307877
申请日：1994-09-16
申请人： Sergio Palara
发明人： Sergio Palara
IPC分类号： H01L29/73 , H01L21/331 , H01L21/8249 , H01L27/06 , H01L29/732 , H01L29/78 , H01L29/76 , H01L29/00
CPC分类号： H01L27/0635 , H01L27/0623
摘要： A device integrated on a chip of a semiconductor material is disclosed which comprises an NPN bipolar transistor and an N-channel MOSFET transistor in an emitter switching configuration, both being vertical conduction types. The bipolar transistor has its base and emitter regions buried; the MOSFET transistor is formed with an N region bounded by the base and the emitter regions and isolated by a deep base contact and isolation region. To improve the device performance, especially at large currents, an N+ region is provided which extends from the front of the chip inwards of the isolated region and around the MOSFET transistor. In one embodiment of the invention, a MOSFET drive transistor is integrated which has its drain terminal in common with the collector of the bipolar transistor, its source terminal connected to the base of the bipolar transistor, and its gate electrode connected to the gate electrode of the MOSFET transistor in the emitter switching configuration.
摘要翻译：公开了集成在半导体材料的芯片上的器件，其包括NPN双极晶体管和发射极开关配置中的N沟道MOSFET晶体管，均为垂直导电类型。双极晶体管的基极和发射极区域被埋置; MOSFET晶体管形成有由基极和发射极区限制的N区，并由深的基极接触和隔离区隔离。为了提高器件性能，特别是在大电流下，提供了从隔离区域的内部向外延伸到MOSFET晶体管的N +区。在本发明的一个实施例中，集成MOSFET驱动晶体管，其漏极端子与双极晶体管的集电极共同，其源极端子连接到双极晶体管的基极，并且其栅电极连接到双极晶体管的栅极 MOSFET晶体管处于发射极开关配置。

7. 发明授权

EP0740073B1 Circuit for detecting an overvoltage on an electric load 失效
标题翻译：电路，用于电负载检测的过电压
公开(公告)号：EP0740073B1
公开(公告)日：2004-08-18
申请号：EP95830168.1
申请日：1995-04-28
申请人： CO.RI.M.ME. CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO , STMicroelectronics S.r.l.
发明人： Palara, Sergio , Sueri, Stefano , Schiaccianoce, Salvatore
IPC分类号： F02P17/12 , G01R29/027 , G01R31/38
CPC分类号： H01T13/60 , F02P17/12 , G01R29/0273

8. 发明授权

EP0757511B1 Starting circuit, MOS transistor using the same and corresponding applications 失效
标题翻译：起动电路MOS晶体管具有这样的电路
公开(公告)号：EP0757511B1
公开(公告)日：2003-03-26
申请号：EP95830340.6
申请日：1995-07-31
申请人： STMicroelectronics S.r.l. , CO.RI.M.ME. CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO
发明人： Palara, Sergio , Graziano, Vito
IPC分类号： H05B41/00 , H03K17/687 , H02M7/5383 , H05B41/295
CPC分类号： H05B41/2825 , H02M7/5383 , H03K17/166 , H03K17/284

9. 发明授权

EP0680224B1 Noise reduction filtering and scan rate conversion interpolation of digital video signals controlled by inter-field correlation information obtained using fuzzy logic inference 失效
标题翻译： Rauschvermindernde滤波和内插取样率转换为数字视频信号，是通过模糊逻辑检测场间的相关性的信息来控制
公开(公告)号：EP0680224B1
公开(公告)日：2002-11-13
申请号：EP94830196.5
申请日：1994-04-27
申请人： CO.RI.M.ME. CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO , STMicroelectronics S.r.l.
发明人： Mancuso, Massimo , Poluzzi, Rinaldo , Rizzotto, Gianguido
IPC分类号： H04N9/64 , H04N5/21 , H04N5/44
CPC分类号： H04N7/012 , H03H2222/02 , H04N5/21 , H04N7/0132 , H04N9/646 , Y10S706/90

10. 发明授权

EP0809294B1 Power semiconductor device structure with vertical PNP transistor 失效
标题翻译：与垂直型PNP晶体管的功率半导体器件结构
公开(公告)号：EP0809294B1
公开(公告)日：2002-01-02
申请号：EP96830293.5
申请日：1996-05-21
申请人： CO.RI.M.ME. CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO
发明人： Aiello, Natale , Patti, Davide , Scaccianoce, Salvatore , Leonardi, Salvatore
IPC分类号： H01L27/00 , H01L27/082 , H01L21/8224
CPC分类号： H01L27/0821 , H01L21/8224

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