专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

3. 发明专利

JP2010515842A Grafted on polypropylene fiber, a material comprising poly-aza cycloalkane, methods for their preparation, and desorption method of the metal cations from a liquid 有权
公开(公告)号：JP2010515842A
公开(公告)日：2010-05-13
申请号：JP2009545983
申请日：2008-01-14
申请人：コミツサリアタレネルジーアトミーク
发明人：ギラール、ロジェ , ショレ、エルヴェ , ドゥナ、フランク , バブオ、ジャン−ルイ , メイエ、ミシェル , ラスカルー、フレデリック
IPC分类号： D06M14/10 , B01J45/00 , B01J47/12 , B01J49/00 , C02F1/42 , D06M13/35 , G21F9/06
CPC分类号： D06M14/10 , C08F8/30 , D06M14/28 , C08F10/06
摘要：ポリプロピレン繊維上でグラフトされるポリアザシクロアルカンにより構成される材料。この材料の調製の方法。該材料と液体を接触させる、この液体に含有される金属陽イオンの脱離の方法。

4. 发明专利

JP2010515185A Personal recognition method and apparatus 审中-公开
公开(公告)号：JP2010515185A
公开(公告)日：2010-05-06
申请号：JP2009544409
申请日：2008-01-03
申请人：コミツサリアタレネルジーアトミーク
发明人：フランソワペリュショ , アンドレルゾ
IPC分类号： G06T1/00 , A61B5/0205 , A61B5/0408 , A61B5/0478 , A61B5/0492 , A61B5/05 , A61B5/117 , G06T7/00 , H04L9/32
CPC分类号： G06K9/0012 , G06K9/0002
摘要：本発明は、認識されるべき個人の部位の可能性がある部位が適用される接触エリア（５）を有する多数の感応部材（３）を含むセンサ（１）と、前記感応部材（３）に接続され、前記接触エリア（５）に適用された前記部位（１１）により生じる局所接触力に関する情報を提供する計測手段（６）と、前記センサ（１）に接続され、前記局所接触力から、認識されるべき前記個人の形態学的特性を判定する処理手段（１０）と、を含む個人認識装置に関する。前記計測手段（６）は、前記接触に対する少なくとももう一つの物理量に関する情報をも提供し、前記処理手段（１０）が、この他の物理量から、認識されるべき前記個人の生理学的特性を判定する。
【選択図】図１

5. 发明专利

JP2010098319A Method for producing stacked and self-aligned component on substrate 审中-公开
标题翻译：在基板上生产堆叠和自对准分量的方法
公开(公告)号：JP2010098319A
公开(公告)日：2010-04-30
申请号：JP2009239536
申请日：2009-10-16
申请人： Commiss Energ Atom , コミツサリアタレネルジーアトミーク
发明人： WACQUEZ ROMAIN , CORONEL PHILIPPE , DESTEFANIS VINCENT , HARTMANN JEAN MICHEL
IPC分类号： H01L21/20 , B81C1/00 , H01L21/76 , H01L21/8238 , H01L27/092
CPC分类号： H01L21/84 , H01L21/76264 , H01L21/8221
摘要： PROBLEM TO BE SOLVED: To provide a method for producing stacked and self-aligned components on a substrate.
SOLUTION: The method for producing stacked and self-aligned components on the substrate comprises steps of: forming a stack of layers on one face of the substrate, the stack comprising a first sacrificial layer, a second sacrificial layer and a superficial layer; etching a zone of the first sacrificial layer; depositing resin in the etched zone of the first sacrificial layer and on the superficial layer; performing lithography of the resin so as to leave at least one zone of resin, in the etched zone of the first sacrificial layer, in alignment with at least one resin zone on the sacrificial layer; replacing the eliminated resin in the etched zone of the first sacrificial layer and on the sacrificial layer with a material for confining the remaining resin; eliminating the remaining resin zones in the etched zone of the first sacrificial layer and on the superficial layer to provide zones dedicated to the production of components; forming elements of components in the dedicated zones; and selectively etching a zone of the second sacrificial layer.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在基板上制造堆叠和自对准部件的方法。解决方案：用于在衬底上生成层叠和自对准部件的方法包括以下步骤：在衬底的一个面上形成一叠层，所述堆叠包括第一牺牲层，第二牺牲层和表面层 ; 蚀刻第一牺牲层的区域; 在第一牺牲层和浅表层的蚀刻区中沉积树脂; 在所述第一牺牲层的所述蚀刻区域中与所述牺牲层上的至少一个树脂区域对准地进行所述树脂的光刻以便留下至少一个树脂区域; 用用于限制剩余树脂的材料代替第一牺牲层的蚀刻区域和牺牲层上的消除树脂; 消除在第一牺牲层和表面层的蚀刻区域中剩余的树脂区域，以提供专门用于生产部件的区域; 在专用区域中形成元件的元件; 并选择性蚀刻第二牺牲层的区域。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2010098316A Method of preventing and dissipating electrostatic discharge in integrated circuit 审中-公开
标题翻译：在集成电路中防止和消除静电放电的方法
公开(公告)号：JP2010098316A
公开(公告)日：2010-04-30
申请号：JP2009238271
申请日：2009-10-15
申请人： Commiss Energ Atom , コミツサリアタレネルジーアトミーク
发明人： NODIN JEAN-FRANCOIS
IPC分类号： H01L49/00 , H01L21/822 , H01L27/04 , H01L45/00
CPC分类号： H01L27/0248 , H01L45/00
摘要： PROBLEM TO BE SOLVED: To provide a protective element having a structure requiring only a small number of components relative to an element of a conventional technology and/or being uncomplicated, protecting an integrated circuit when it is turned on or off, having very low parasitic capacitance to the protected integrated circuit, and never increased in volume.
SOLUTION: This element (100) for protecting at least one integrated circuit against electrostatic discharge includes at least: an ionizable metal portion (106); a solid electrolyte (104) arranged in contact with the ionizable metal portion and including metal ions of nature similar to the metal of the ionizable metal portion; and an electrode (102) electrically connected to the solid electrolyte, wherein the concentration of the metal ions in the solid electrolyte is lower than the saturation concentration of metal ions in the solid electrolyte.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种具有相对于传统技术的元件仅需少量元件的结构和/或不复杂的保护元件，当其被接通或断开时保护集成电路，具有对受保护的集成电路具有非常低的寄生电容，并且从未增加体积。解决方案：用于保护至少一个集成电路免受静电放电的该元件（100）至少包括：可电离的金属部分（106）; 固体电解质（104），其与所述可电离金属部分接触并且包括与所述可电离金属部分的金属类似的性质的金属离子; 和与固体电解质电连接的电极（102），其中固体电解质中的金属离子的浓度低于固体电解质中的金属离子的饱和浓度。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2010087520A Heterojunction photovoltaic cell with dual doping and method of manufacturing the same 有权
标题翻译：具有双重掺杂的异相光电池及其制造方法
公开(公告)号：JP2010087520A
公开(公告)日：2010-04-15
申请号：JP2009229662
申请日：2009-10-01
申请人： Commiss Energ Atom , コミツサリアタレネルジーアトミーク
发明人： RIBEYRON PIERRE-JEAN
IPC分类号： H01L31/04 , H01L31/065 , H01L31/075
CPC分类号： H01L31/075 , H01L31/065 , H01L31/0747 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a photovoltaic cell including a heterojunction between a crystalline semiconductor substrate (210) of a first conductivity type and a first amorphous layer (220), the amorphous layer being made of the same semiconductor material, having a second conductivity type reverse of the first conductivity type, and also having a dopant concentration between 1.10 19 to 1.10 22 atoms/cm 3 . SOLUTION: The photovoltaic cell further includes a second amorphous layer (225) of the same conductivity type as that of the first layer and having a dopant concentration between 1.10 16 to 1.10 18 atoms/cm 3 . The second layer is deposited directly onto a first face of the substrate and coated with the first layer. Finally, the photovoltaic cell includes a third amorphous layer (260) on a second face of the substrate opposite to the first face, the third layer being made of the same material as the substrate, having the same conductivity type, and also having a dopant concentration between 1.10 19 to 1.10 22 atoms/cm 3 . COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种在第一导电类型的晶体半导体衬底（210）和第一非晶层（220）之间具有异质结的光伏电池，所述非晶层由相同的半导体材料制成，具有第一导电类型的第二导电类型反向，并且掺杂剂浓度在1.10×SP>至1.10×SP> 22原子/ cm 3之间。解决方案：光伏电池还包括与第一层相同的导电类型的第二非晶层（225），并且掺杂剂浓度在1.10×SP≤16.0之间< / SP>原子/ cm 3 。将第二层直接沉积在基材的第一面上并涂覆第一层。最后，光伏电池包括在与第一面相对的第二面上的第三非晶层（260），第三层由与基板相同的材料制成，具有相同的导电类型，并且还具有掺杂剂浓度在1.10 19 至1.10 22原子/ cm 3之间。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2010511300A Method for producing a hybrid substrate 有权
公开(公告)号：JP2010511300A
公开(公告)日：2010-04-08
申请号：JP2009538705
申请日：2007-11-28
申请人：コミツサリアタレネルジーアトミーク
发明人：アンヌ−マリー・シャルヴェ , シルヴィ・サルトーリ , ユベール・モリソー
IPC分类号： H01L21/02
CPC分类号： H01L21/31053 , H01L21/76208 , H01L21/76251
摘要： The invention concerns a method of producing a mixed substrate, that is to say a substrate comprising at least one block of material different from the material of the substrate, the method comprising the following successive steps: formation of a cavity in a substrate of first material, and from one of its faces, the formation of the cavity being carried out so as to leave at least part of the first material projecting from the bottom of the cavity, formation of the block by means of a reaction, initiated from the walls of the cavity, between the first material and at least one chemical element contributed in order to obtain a second material filling the cavity, the formation of the block being carried out so as to obtain, from the part of the first material projecting, a protrusion of second material projecting on said face of the substrate.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式