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1. 发明专利

JP2010098319A Method for producing stacked and self-aligned component on substrate 审中-公开
标题翻译：在基板上生产堆叠和自对准分量的方法
公开(公告)号：JP2010098319A
公开(公告)日：2010-04-30
申请号：JP2009239536
申请日：2009-10-16
申请人： Commiss Energ Atom , コミツサリアタレネルジーアトミーク
发明人： WACQUEZ ROMAIN , CORONEL PHILIPPE , DESTEFANIS VINCENT , HARTMANN JEAN MICHEL
IPC分类号： H01L21/20 , B81C1/00 , H01L21/76 , H01L21/8238 , H01L27/092
CPC分类号： H01L21/84 , H01L21/76264 , H01L21/8221
摘要： PROBLEM TO BE SOLVED: To provide a method for producing stacked and self-aligned components on a substrate.
SOLUTION: The method for producing stacked and self-aligned components on the substrate comprises steps of: forming a stack of layers on one face of the substrate, the stack comprising a first sacrificial layer, a second sacrificial layer and a superficial layer; etching a zone of the first sacrificial layer; depositing resin in the etched zone of the first sacrificial layer and on the superficial layer; performing lithography of the resin so as to leave at least one zone of resin, in the etched zone of the first sacrificial layer, in alignment with at least one resin zone on the sacrificial layer; replacing the eliminated resin in the etched zone of the first sacrificial layer and on the sacrificial layer with a material for confining the remaining resin; eliminating the remaining resin zones in the etched zone of the first sacrificial layer and on the superficial layer to provide zones dedicated to the production of components; forming elements of components in the dedicated zones; and selectively etching a zone of the second sacrificial layer.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在基板上制造堆叠和自对准部件的方法。解决方案：用于在衬底上生成层叠和自对准部件的方法包括以下步骤：在衬底的一个面上形成一叠层，所述堆叠包括第一牺牲层，第二牺牲层和表面层 ; 蚀刻第一牺牲层的区域; 在第一牺牲层和浅表层的蚀刻区中沉积树脂; 在所述第一牺牲层的所述蚀刻区域中与所述牺牲层上的至少一个树脂区域对准地进行所述树脂的光刻以便留下至少一个树脂区域; 用用于限制剩余树脂的材料代替第一牺牲层的蚀刻区域和牺牲层上的消除树脂; 消除在第一牺牲层和表面层的蚀刻区域中剩余的树脂区域，以提供专门用于生产部件的区域; 在专用区域中形成元件的元件; 并选择性蚀刻第二牺牲层的区域。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2004179658A Method for forming nanostructure of uniform and controlled-size semiconductor material on dielectric material by means of cvd method 有权
公开(公告)号：JP2004179658A
公开(公告)日：2004-06-24
申请号：JP2003392551
申请日：2003-11-21
申请人： Commiss Energ Atom , コミツサリアタレネルジーアトミーク
发明人： MAZEN FREDERIC , BARON THIERRY , HARTMANN JEAN MICHEL , SEMERIA MARIE-NOELLE
IPC分类号： B82B3/00 , C23C16/04 , C30B25/00 , C30B25/02 , H01L21/20 , H01L21/205 , H01L21/28 , H01L21/285 , H01L21/8247 , H01L27/10 , H01L27/115 , H01L29/06 , H01L29/423 , H01L29/49 , H01L29/66 , H01L29/788 , H01L29/792
CPC分类号： H01L29/0665 , B82Y10/00 , C23C16/04 , C30B25/00 , C30B25/02 , C30B29/605 , H01L21/0242 , H01L21/02422 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/0259 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/28273 , H01L29/0673 , Y10S438/967
摘要： PROBLEM TO BE SOLVED: To provide a method for forming the nanostructure of a uniform and controlled-size semiconductor material on a dielectric material by using CVD method. SOLUTION: The method for the nanostructure of the semiconductor material on the dielectric material includes a step, in which a stable nucleus(14) of a first semiconductor material is formed from a precursor(11) of the first semiconductor material on a substrate(12) by the CVD method, a step in which the precursor is selected to enable the formation of the nucleus(14), and a step in which nanostructures (16A, 16B) of a second semiconductor material are formed from the stable nucleus(14) of the first material, using a selected precursor(21) so that the second semiconductor material is selectively deposited only on the nucleus(14) by the CVD method. Additionally, this invention concerns a device, having a nanostructure formed by one of the methods and its nanostructure. COPYRIGHT: (C)2004,JPO

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