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1. 发明授权

US5808331A Monolithic semiconductor device having a microstructure and a transistor 失效
标题翻译：具有微结构和晶体管的单片半导体器件
公开(公告)号：US5808331A
公开(公告)日：1998-09-15
申请号：US895171
申请日：1997-07-16
申请人： Zuoying L. Zhang , Barun K. Kar , Guang X. Li , Ronald J. Gutteridge , Eric D. Joseph
发明人： Zuoying L. Zhang , Barun K. Kar , Guang X. Li , Ronald J. Gutteridge , Eric D. Joseph
IPC分类号： B81C1/00 , B81C3/00 , H01L29/82
CPC分类号： B81C1/00246 , B81C2203/0742
摘要： A semiconductor device (15) having a sensor (11) and a transistor (10) formed on a monolithic semiconductor substrate (16). The sensor (11) has a source region (41), a drain region (42), and a microstructure (12) which is formed from a conductive layer (28). The microstructure (12) modulates a channel region between the source and drain regions (41,42). The transistor has a gate structure, a portion of which is formed from the same conductive layer (28) used to form the microstructure (12). Anneal steps are performed on the conductive layer (28) to remove stress prior to the formation of source and drain regions (34,36) of the transistor (10). A self-test structure (14) is formed adjacent to the microstructure (12) which is used to calibrate and verify the operation of the sensor (11).
摘要翻译：具有形成在单片半导体衬底（16）上的传感器（11）和晶体管（10）的半导体器件（15）。传感器（11）具有源极区（41），漏区（42）和由导电层（28）形成的微结构（12）。微结构（12）调制源区和漏区之间的沟道区（41,42）。晶体管具有栅极结构，其一部分由用于形成微结构（12）的相同导电层（28）形成。在形成晶体管（10）的源区和漏区（34,36）之前，在导电层（28）上进行退火步骤以去除应力。形成与微结构（12）相邻的自检结构（14），其用于校准和验证传感器（11）的操作。

2. 发明授权

US5600065A Angular velocity sensor 失效
标题翻译：角速度传感器
公开(公告)号：US5600065A
公开(公告)日：1997-02-04
申请号：US548017
申请日：1995-10-25
申请人： Barun K. Kar , Guang X. Li , Zuoying L. Zhang , Eric D. Joseph , Frank A. Shemansky, Jr.
发明人： Barun K. Kar , Guang X. Li , Zuoying L. Zhang , Eric D. Joseph , Frank A. Shemansky, Jr.
IPC分类号： G01C19/5719 , G01P9/04
CPC分类号： G01C19/5719
摘要： Converting a Coriolis force into an electrical signal, an electro-mechanical transducer (10) is a field effect transistor (18) having angular velocity sensing capabilities. A gate electrode (16) is suspended over a channel region (60) of a substrate (31), is biased at a desired potential, and is oscillated along an axis (40). The gate electrode (16) and the substrate (31) are rotated about a different axis (41) at an angular velocity (44). The resulting Coriolis force displaces the suspended gate electrode (16) along yet another axis (42) which modulates a current (53) in the channel region (60) of the substrate (31). The amplitude of the current (53) describes the magnitude of the angular velocity (44).
摘要翻译：将科里奥利力转化为电信号，机电换能器（10）是具有角速度感测能力的场效应晶体管（18）。栅极电极（16）悬置在衬底（31）的沟道区域（60）上，被偏置在期望的电位，并且沿着轴线（40）摆动。栅极电极（16）和基板（31）以角速度（44）围绕不同的轴线（41）旋转。所得到的科里奥利力沿着另一轴线（42）移动悬挂的栅极电极（42），该另一轴线（42）调制衬底（31）的通道区域（60）中的电流（53）。电流（53）的振幅表示角速度的大小（44）。

3. 发明授权

US6043524A Transducer and interface circuit 失效
标题翻译：传感器和接口电路
公开(公告)号：US6043524A
公开(公告)日：2000-03-28
申请号：US792843
申请日：1997-02-03
申请人： Eric D. Joseph , Barun K. Kar
发明人： Eric D. Joseph , Barun K. Kar
IPC分类号： G01P15/12 , H01L29/82
CPC分类号： G01P15/124 , Y10S73/01
摘要： A sensor (100) includes a fixed gate field-effect transistor (138) that produces a quiescent signal (V.sub.QUIESC1) in a channel (336) when a control signal (V.sub.CONTROL) is applied to a source (332) of the FGFET. A movable gate field-effect transistor (MGFET) (108) produces a sense signal (V.sub.ACCEL) in a channel (316) in response to a physical condition of the sensor when the control signal is applied to a source (312) of the MGFET such that the sense signal is proportional to the quiescent signal. The difference between the currents in the FGFET and MGFET is amplified by a differential amplifier (230) to produce the output signal (V.sub.OUT) of the sensor. The difference between a reference signal (V.sub.RATIO) and the quiescent signal is amplified in an amplifier (206) to produce the control signal that adjusts the output signal to be proportional to the reference signal.
摘要翻译：当控制信号（VCONTROL）被施加到FGFET的源（332）时，传感器（100）包括固定栅极场效应晶体管（138），其在通道（336）中产生静态信号（VQUIESC1）。当控制信号被施加到MGFET的源（312）时，可移动门场效应晶体管（MGFET）（108）响应于传感器的物理状态在通道（316）中产生感测信号（VACCEL）使得感测信号与静态信号成比例。 FGFET和MGFET中的电流之间的差异由差分放大器（230）放大，以产生传感器的输出信号（VOUT）。参考信号（VRATIO）和静态信号之间的差异在放大器（206）中被放大，以产生调节输出信号与参考信号成比例的控制信号。

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