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1. 发明授权

US09024299B2 Method for fabricating a dual work function semiconductor device and the device made thereof 有权
标题翻译：双功能半导体器件的制造方法及其制造方法
公开(公告)号：US09024299B2
公开(公告)日：2015-05-05
申请号：US12578439
申请日：2009-10-13
申请人： Zilan Li , Joshua Tseng , Thomas Witters , Stefan De Gendt
发明人： Zilan Li , Joshua Tseng , Thomas Witters , Stefan De Gendt
IPC分类号： H01L21/8234 , H01L21/8238 , H01L21/28 , H01L29/66 , H01L29/49 , H01L29/51 , H01L29/78
CPC分类号： H01L21/823842 , H01L21/28229 , H01L21/823857 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L29/785
摘要： A method for manufacturing a dual work function semiconductor device and the device made thereof are disclosed. In one aspect, a method includes providing a gate dielectric layer over a semiconductor substrate. The method further includes forming a metal layer over the gate dielectric layer. The method further includes forming a layer of gate filling material over the metal layer. The method further includes patterning the gate dielectric layer, the metal layer and the gate filling layer to form a first and a second gate stack. The method further includes removing the gate filling material only from the second gate stack thereby exposing the underlying metal layer. The method further includes converting the exposed metal layer into an metal oxide layer. The method further includes reforming the second gate stack with another gate filling material.
摘要翻译：公开了一种制造双功能半导体器件的方法及其制造的器件。一方面，一种方法包括在半导体衬底上提供栅介质层。该方法还包括在栅介电层上形成金属层。该方法还包括在金属层上形成栅极填充材料层。该方法还包括图案化栅极介电层，金属层和栅极填充层以形成第一和第二栅极叠层。该方法还包括仅从第二栅极堆叠去除栅极填充材料，从而暴露下面的金属层。该方法还包括将暴露的金属层转变成金属氧化物层。该方法还包括用另一种栅极填充材料重新构造第二栅极堆叠。

2. 发明申请

US20100109095A1 METHOD FOR FABRICATING A DUAL WORK FUNCTION SEMICONDUCTOR DEVICE AND THE DEVICE MADE THEREOF 有权
标题翻译：制造双功能半导体器件及其器件的方法
公开(公告)号：US20100109095A1
公开(公告)日：2010-05-06
申请号：US12578439
申请日：2009-10-13
申请人： Zilan Li , Joshua Tseng , Thomas Witters , Stefan De Gendt
发明人： Zilan Li , Joshua Tseng , Thomas Witters , Stefan De Gendt
IPC分类号： H01L27/088 , H01L21/8234 , H01L21/28
CPC分类号： H01L21/823842 , H01L21/28229 , H01L21/823857 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L29/785
摘要： A method for manufacturing a dual work function semiconductor device and the device made thereof are disclosed. In one aspect, a method includes providing a gate dielectric layer over a semiconductor substrate. The method further includes forming a metal layer over the gate dielectric layer. The method further includes forming a layer of gate filling material over the metal layer. The method further includes patterning the gate dielectric layer, the metal layer and the gate filling layer to form a first and a second gate stack. The method further includes removing the gate filling material only from the second gate stack thereby exposing the underlying metal layer. The method further includes converting the exposed metal layer into an metal oxide layer. The method further includes reforming the second gate stack with another gate filling material.
摘要翻译：公开了一种制造双功能半导体器件的方法及其制造的器件。一方面，一种方法包括在半导体衬底上提供栅介质层。该方法还包括在栅介电层上形成金属层。该方法还包括在金属层上形成栅极填充材料层。该方法还包括图案化栅极介电层，金属层和栅极填充层以形成第一和第二栅极叠层。该方法还包括仅从第二栅极堆叠去除栅极填充材料，从而暴露下面的金属层。该方法还包括将暴露的金属层转变成金属氧化物层。该方法还包括用另一种栅极填充材料重新构造第二栅极堆叠。

3. 发明申请

US20090094371A1 CONNECTION FORWARDING 有权
标题翻译：连接前进
公开(公告)号：US20090094371A1
公开(公告)日：2009-04-09
申请号：US12331257
申请日：2008-12-09
申请人： Kand Ly , Joshua Tseng , Steve McCanne
发明人： Kand Ly , Joshua Tseng , Steve McCanne
IPC分类号： G06F15/16
CPC分类号： H04L67/14 , H04L67/2814 , H04L67/2876
摘要： Two or more network traffic processors connected with the same LAN and WAN are identified as neighbors. Neighboring network traffic processors cooperate to overcome asymmetric routing, thereby ensuring that related sequences of network traffic are processed by the same network proxy. A network proxy can be included in a network traffic processor or as a standalone unit. A network traffic processor that intercepts a new connection initiation by a client assigns a network proxy to handle all messages associated with that connection. The network traffic processor conveys connection information to neighboring network traffic processors. The neighboring network traffic processors use the connection information to redirect network traffic associated with the connection to the assigned network proxy, thereby overcoming the effects of asymmetric routing. The assigned network proxy handles redirected network traffic in much the same way that it would handle network traffic received directly.
摘要翻译：与同一LAN和WAN连接的两个或多个网络流量处理器被识别为邻居。相邻的网络流量处理器合作克服非对称路由，从而确保相同的网络流量的相关序列被相同的网络代理处理。网络代理可以包含在网络流量处理器中或独立的单元中。拦截客户端的新连接启动的网络流量处理器分配网络代理来处理与该连接相关联的所有消息。网络流量处理器将连接信息传递给相邻网络流量处理器。相邻网络流量处理器使用连接信息将与连接相关联的网络流量重定向到所分配的网络代理，从而克服非对称路由的影响。分配的网络代理以与处理直接接收的网络流量大致相同的方式处理重定向的网络流量。

4. 发明申请

US20060248194A1 Connection forwarding 审中-公开
公开(公告)号：US20060248194A1
公开(公告)日：2006-11-02
申请号：US11377906
申请日：2006-03-15
申请人： Kand Ly , Joshua Tseng , Steve McCanne
发明人： Kand Ly , Joshua Tseng , Steve McCanne
IPC分类号： G06F15/173
CPC分类号： H04L67/14 , H04L67/2814 , H04L67/2876
摘要： Two or more network traffic processors connected with the same LAN and WAN are identified as neighbors. Neighboring network traffic processors cooperate to overcome asymmetric routing, thereby ensuring that related sequences of network traffic are processed by the same network proxy. A network proxy can be included in a network traffic processor or as a standalone unit. A network traffic processor that intercepts a new connection initiation by a client assigns a network proxy to handle all messages associated with that connection. The network traffic processor conveys connection information to neighboring network traffic processors. The neighboring network traffic processors use the connection information to redirect network traffic associated with the connection to the assigned network proxy, thereby overcoming the effects of asymmetric routing. The assigned network proxy handles redirected network traffic in much the same way that it would handle network traffic received directly.

5. 发明授权

US08386637B2 Connection forwarding 有权
标题翻译：连接转发
公开(公告)号：US08386637B2
公开(公告)日：2013-02-26
申请号：US13410032
申请日：2012-03-01
申请人： Kand Ly , Joshua Tseng , Steve McCanne
发明人： Kand Ly , Joshua Tseng , Steve McCanne
IPC分类号： G06F15/173
CPC分类号： H04L67/14 , H04L67/2814 , H04L67/2876
摘要： Two or more network traffic processors connected with the same LAN and WAN are identified as neighbors. Neighboring network traffic processors cooperate to overcome asymmetric routing, thereby ensuring that related sequences of network traffic are processed by the same network proxy. A network proxy can be included in a network traffic processor or as a standalone unit. A network traffic processor that intercepts a new connection initiation by a client assigns a network proxy to handle all messages associated with that connection. The network traffic processor conveys connection information to neighboring network traffic processors. The neighboring network traffic processors use the connection information to redirect network traffic associated with the connection to the assigned network proxy, thereby overcoming the effects of asymmetric routing. The assigned network proxy handles redirected network traffic in much the same way that it would handle network traffic received directly.
摘要翻译：与同一LAN和WAN连接的两个或多个网络流量处理器被识别为邻居。相邻的网络流量处理器合作克服非对称路由，从而确保相同的网络流量的相关序列被相同的网络代理处理。网络代理可以包含在网络流量处理器中或独立的单元中。拦截客户端的新连接启动的网络流量处理器分配网络代理来处理与该连接相关联的所有消息。网络流量处理器将连接信息传递给相邻网络流量处理器。相邻网络流量处理器使用连接信息将与连接相关联的网络流量重定向到所分配的网络代理，从而克服非对称路由的影响。分配的网络代理以与处理直接接收的网络流量大致相同的方式处理重定向的网络流量。

6. 发明授权

US07829949B2 High-K dielectric metal gate device structure 有权
公开(公告)号：US07829949B2
公开(公告)日：2010-11-09
申请号：US12589421
申请日：2009-10-23
申请人： Joshua Tseng , Kang-Cheng Lin , Ji-Yi Yang , Kuo-Tai Huang , Ryan Chia-Jen Chen
发明人： Joshua Tseng , Kang-Cheng Lin , Ji-Yi Yang , Kuo-Tai Huang , Ryan Chia-Jen Chen
IPC分类号： H01L27/092
CPC分类号： H01L21/823857 , H01L21/823842
摘要： A metal gate/high-k dielectric semiconductor device provides an NMOS gate structure and a PMOS gate structure formed on a semiconductor substrate. The NMOS gate structure includes a high-k gate dielectric treated with a dopant impurity such as La and the high-k gate dielectric material of the PMOS gate structure is deficient of this dopant impurity and further includes a work function tuning layer over the high-k gate dielectric.

7. 发明申请

US20090108365A1 HIGH-K DIELECTRIC METAL GATE DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME 有权
标题翻译：高K介电金属栅组件结构及其形成方法
公开(公告)号：US20090108365A1
公开(公告)日：2009-04-30
申请号：US11926830
申请日：2007-10-29
申请人： Joshua Tseng , Kang-Cheng Lin , Ji-Yi Yang , Kuo-Tai Huang , Ryan Chia-Jen Chen
发明人： Joshua Tseng , Kang-Cheng Lin , Ji-Yi Yang , Kuo-Tai Huang , Ryan Chia-Jen Chen
IPC分类号： H01L27/092 , H01L21/3205
CPC分类号： H01L21/823857 , H01L21/823842
摘要： A metal gate/high-k dielectric semiconductor device provides an NMOS gate structure and a PMOS gate structure formed on a semiconductor substrate. The NMOS gate structure includes a high-k gate dielectric treated with a dopant impurity such as La and the high-k gate dielectric material of the PMOS gate structure is deficient of this dopant impurity and further includes a work function tuning layer over the high-k gate dielectric. A process for simultaneously forming the NMOS and PMOS gate structures includes forming the high-k gate dielectric material, and the work function tuning layer thereover, then selectively removing the work function tuning layer from the NMOS region and carrying out a plasma treatment to selectively dope the high-k gate dielectric material in the NMOS region with a dopant impurity while the high-k gate dielectric in the PMOS region is substantially free of the dopant impurity.
摘要翻译：金属栅极/高k电介质半导体器件提供形成在半导体衬底上的NMOS栅极结构和PMOS栅极结构。 NMOS栅极结构包括用诸如La的掺杂剂杂质处理的高k栅极电介质，并且PMOS栅极结构的高k栅极电介质材料缺乏该掺杂杂质，并且还包括高功率调制层， k栅极电介质。用于同时形成NMOS和PMOS栅极结构的工艺包括在其上形成高k栅极介电材料和功函数调谐层，然后从NMOS区选择性地去除功函数调谐层，并进行等离子体处理以选择性地掺杂具有掺杂剂杂质的NMOS区域中的高k栅极电介质材料，而PMOS区域中的高k栅极电介质基本上不含掺杂剂杂质。

8. 发明授权

US07332449B2 Method for forming dual damascenes with supercritical fluid treatments 有权
标题翻译：用超临界流体处理形成双重大马士革的方法
公开(公告)号：US07332449B2
公开(公告)日：2008-02-19
申请号：US11240965
申请日：2005-09-30
申请人： Ching-Ya Wang , Joshua Tseng , Henry Lo , Jean Wang
发明人： Ching-Ya Wang , Joshua Tseng , Henry Lo , Jean Wang
IPC分类号： H01L21/302 , H01L21/461 , H01L21/44
CPC分类号： H01L23/53238 , H01L21/02063 , H01L21/02101 , H01L21/3105 , H01L21/31058 , H01L21/31133 , H01L21/76808 , H01L21/76814 , H01L21/76831 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , Y10S438/963 , H01L2924/00
摘要： A method for forming a damascene structure by providing a single process solution for resist ashing while avoiding and repairing plasma etching damage as well as removing absorbed moisture in the dielectric layer, the method including providing a substrate comprising an uppermost photoresist layer and an opening extending through a thickness of an inter-metal dielectric (IMD) layer to expose an underlying metal region; and, carrying out at least one supercritical fluid treatment comprising supercritical CO2, a first co-solvent, and an additive selected from the group consisting of a metal corrosion inhibitor and a metal anti-oxidation agent to remove the uppermost photoresist layer, as well as including an optional dielectric insulating layer bond forming agent.
摘要翻译：一种通过提供用于抗蚀剂灰化的单一工艺溶液来形成镶嵌结构的方法，同时避免和修复等离子体蚀刻损伤以及去除介电层中的吸收的水分，所述方法包括提供包括最上面的光致抗蚀剂层和延伸穿过的开口金属间电介质（IMD）层的厚度以暴露下面的金属区域; 并且进行至少一种超临界流体处理，其包括超临界CO 2，第一共溶剂和选自金属缓蚀剂和金属抗氧化剂的添加剂以除去最上面的光致抗蚀剂层，以及包括可选的介电绝缘层结合剂。

9. 发明授权

US07544606B2 Method to implement stress free polishing 有权
标题翻译：实施无压力抛光的方法
公开(公告)号：US07544606B2
公开(公告)日：2009-06-09
申请号：US11142215
申请日：2005-06-01
申请人： Jean Wang , Chia-Ming Yang , Henry Lo , Joshua Tseng
发明人： Jean Wang , Chia-Ming Yang , Henry Lo , Joshua Tseng
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/02068 , H01L21/32115 , H01L21/7684 , H01L21/76877
摘要： A method of forming a metal feature in a low-k dielectric layer is provided. The method includes forming an opening in a low-k dielectric layer, forming a metal layer having a substantially planar surface over the low-k dielectric layer using spin-on method, and stress free polishing the metal layer. Preferably, the metal layer comprises copper or copper alloys. The metal layer preferably includes a first sub layer having a substantially non-planar surface and a second sub layer having a substantially planar surface on the first sub layer.
摘要翻译：提供了一种在低k电介质层中形成金属特征的方法。该方法包括在低k电介质层中形成开口，使用旋转方法在低k电介质层上形成具有基本平坦表面的金属层，并且对金属层进行无应力的研磨。优选地，金属层包括铜或铜合金。金属层优选地包括具有基本非平面表面的第一子层和在第一子层上具有基本平坦表面的第二子层。

10. 发明申请

US20070241455A1 Method for forming dual damascenes with supercritical fluid treatments 有权
标题翻译：用超临界流体处理形成双重大马士革的方法
公开(公告)号：US20070241455A1
公开(公告)日：2007-10-18
申请号：US11240965
申请日：2005-09-30
申请人： Ching-Ya Wang , Joshua Tseng , Henry Lo , Jean Wang
发明人： Ching-Ya Wang , Joshua Tseng , Henry Lo , Jean Wang
IPC分类号： H01L23/48
CPC分类号： H01L23/53238 , H01L21/02063 , H01L21/02101 , H01L21/3105 , H01L21/31058 , H01L21/31133 , H01L21/76808 , H01L21/76814 , H01L21/76831 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , Y10S438/963 , H01L2924/00
摘要： A method for forming a damascene structure by providing a single process solution for resist ashing while avoiding and repairing plasma etching damage as well as removing absorbed moisture in the dielectric layer, the method including providing a substrate comprising an uppermost photoresist layer and an opening extending through a thickness of an inter-metal dielectric (IMD) layer to expose an underlying metal region; and, carrying out at least one supercritical fluid treatment comprising supercritical CO2, a first co-solvent, and an additive selected from the group consisting of a metal corrosion inhibitor and a metal anti-oxidation agent to remove the uppermost photoresist layer, as well as including an optional dielectric insulating layer bond forming agent.
摘要翻译：一种通过提供用于抗蚀剂灰化的单一工艺溶液来形成镶嵌结构的方法，同时避免和修复等离子体蚀刻损伤以及去除介电层中的吸收的水分，所述方法包括提供包括最上面的光致抗蚀剂层和延伸穿过的开口金属间电介质（IMD）层的厚度以暴露下面的金属区域; 并且进行至少一种超临界流体处理，其包括超临界CO 2，第一共溶剂和选自金属缓蚀剂和金属抗氧化剂的添加剂以除去最上面的光致抗蚀剂层，以及包括可选的介电绝缘层结合剂。

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