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1. 发明授权

US06515573B1 Method and system for providing edge-junction TMR utilizing a hard magnet as a pinned layer 有权
标题翻译：提供利用硬磁体作为被钉扎层的边缘连接TMR的方法和系统
公开(公告)号：US06515573B1
公开(公告)日：2003-02-04
申请号：US09596798
申请日：2000-06-19
申请人： Zi-Wen Dong , Zhupei Shi , Qunwen Leng
发明人： Zi-Wen Dong , Zhupei Shi , Qunwen Leng
IPC分类号： H01L4300
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/313 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01F10/3268 , H01L43/08
摘要： A method and system for providing a magnetoresistive sensor for reading data from a recording media is disclosed. The method and system include providing at least one barrier layer and a free layer having at least one edge. The at least one edge of the free layer is adjacent to the at least one barrier layer. The free layer is ferromagnetic and has a low coercivity. The method and system also include providing at least one hard magnetic layer. The at least one hard magnetic layer has a coercivity greater than the free layer coercivity. The at least one barrier layer is disposed between the at least one hard magnetic layer and the free layer. The at least one barrier layer is sufficiently thin to allow tunneling of charge carriers between the at least one hard magnetic layer and the free layer.
摘要翻译：公开了一种用于提供用于从记录介质读取数据的磁阻传感器的方法和系统。该方法和系统包括提供至少一个阻挡层和具有至少一个边缘的自由层。自由层的至少一个边缘与至少一个阻挡层相邻。自由层是铁磁性的并且具有低的矫顽力。该方法和系统还包括提供至少一个硬磁性层。至少一个硬磁性层具有大于自由层矫顽力的矫顽力。所述至少一个阻挡层设置在所述至少一个硬磁性层和所述自由层之间。至少一个阻挡层足够薄以允许电荷载体在至少一个硬磁性层和自由层之间隧穿。

2. 发明授权

US06756071B1 Method for manufacturing a GMR spin valve having a smooth interface between magnetic and non-magnetic layers 失效
标题翻译：用于制造具有磁性和非磁性层之间平滑界面的GMR自旋阀的方法
公开(公告)号：US06756071B1
公开(公告)日：2004-06-29
申请号：US10243401
申请日：2002-09-12
申请人： Zhupei Shi , Ming Mao , Qunwen Leng
发明人： Zhupei Shi , Ming Mao , Qunwen Leng
IPC分类号： B05D512
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , Y10S428/90 , Y10S428/928 , Y10T428/1121
摘要： A GMR spin valve is provided for reading a magnetic signal from a magnetic recording medium. The spin valve includes a non-magnetic layer such as for example copper, separated by first and second magnetic layers. The spin valve includes a pinned magnetic layer and a free magnetic layer, the resistance of the spin valve changing with the relative angle between the direction of magnetization of free and pinned layers. Extremely smooth surfaces are provided at the interfaces between the non-magnetic layer and the adjacent magnetic layers. This smooth interface greatly enhances the performance and reliability of the spin valve by allowing extremely tight control of the thickness of the non-magnetic layer and by preventing atomic diffusion between the non-magnetic and magnetic layers. This smooth interface is achieved by including a surfactant in the deposition of the non-magnetic layer.
摘要翻译：提供用于从磁记录介质读取磁信号的GMR自旋阀。自旋阀包括由第一和第二磁性层分离的非磁性层，例如铜。自旋阀包括钉扎磁性层和自由磁性层，自旋阀的阻力随游离层和被钉扎层的磁化方向之间的相对角度而变化。在非磁性层和相邻的磁性层之间的界面处提供非常平滑的表面。这种平滑的界面通过非常严格地控制非磁性层的厚度并防止非磁性层和磁性层之间的原子扩散，大大提高了自旋阀的性能和可靠性。通过在非磁性层的沉积中包括表面活性剂来实现该光滑界面。

3. 发明授权

US06479096B1 Method for manufacturing a GMR spin valve having a smooth interface between magnetic and non-magnetic layers 有权
标题翻译：用于制造具有磁性和非磁性层之间平滑界面的GMR自旋阀的方法
公开(公告)号：US06479096B1
公开(公告)日：2002-11-12
申请号：US09454202
申请日：1999-12-03
申请人： Zhupei Shi , Ming Mao , Qunwen Leng
发明人： Zhupei Shi , Ming Mao , Qunwen Leng
IPC分类号： B05D512
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , Y10S428/90 , Y10S428/928 , Y10T428/1121
摘要： A GMR spin valve is provided for reading a magnetic signal from a magnetic recording medium. The spin valve includes a non-magnetic layer such as for example copper, separated by first and second magnetic layers. The spin valve includes a pinned magnetic layer and a free magnetic layer, the resistance of the spin valve changing with the relative angle between the direction of magnetization of free and pinned layers. Extremely smooth surfaces are provided at the interfaces between the non-magnetic layer and the adjacent magnetic layers. This smooth interface greatly enhances the performance and reliability of the spin valve by allowing extremely tight control of the thickness of the non-magnetic layer and by preventing atomic diffusion between the non-magnetic and magnetic layers. This smooth interface is achieved by including a surfactant in the deposition of the non-magnetic layer.
摘要翻译：提供用于从磁记录介质读取磁信号的GMR自旋阀。自旋阀包括由第一和第二磁性层分离的非磁性层，例如铜。自旋阀包括钉扎磁性层和自由磁性层，自旋阀的阻力随游离层和被钉扎层的磁化方向之间的相对角度而变化。在非磁性层和相邻的磁性层之间的界面处提供非常平滑的表面。这种平滑的界面通过非常严格地控制非磁性层的厚度并防止非磁性层和磁性层之间的原子扩散，大大提高了自旋阀的性能和可靠性。通过在非磁性层的沉积中包括表面活性剂来实现该光滑界面。

4. 发明授权

US06277505B1 Read sensor with improved thermal stability and manufacturing method therefor 失效
标题翻译：读取具有改善热稳定性的传感器及其制造方法
公开(公告)号：US06277505B1
公开(公告)日：2001-08-21
申请号：US09234953
申请日：1999-01-21
申请人： Zhupei Shi , Ming Mao , Qunwen Leng
发明人： Zhupei Shi , Ming Mao , Qunwen Leng
IPC分类号： B32B900
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01F10/3254 , H01F10/3268 , Y10S428/90 , Y10T428/1121
摘要： A structure which includes a ferromagnetic (FM) layer, a thin oxide layer, and an antiferromagnetic (AFM) layer is provided. The thin oxide layer, between 1 to 10 oxygen atoms in thickness, minimizes interlayer atomic diffusion between the FM layer and the antiferromagnetic layer. In a preferred embodiment, a spin valve sensor with improved thermal stability is provided by including the thin oxide layer between a FM layer and an AFM layer. The presence of the thin oxide layer also results in an improved spin valve sensor with an enhanced exchange pinning field.
摘要翻译：提供了包括铁磁（FM）层，薄氧化物层和反铁磁性（AFM）层的结构。厚度在1至10个氧原子之间的薄氧化物层使FM层和反铁磁层之间的层间原子扩散最小化。在优选实施例中，通过在FM层和AFM层之间包括薄氧化物层来提供具有改善的热稳定性的自旋阀传感器。薄氧化物层的存在还导致改进的自旋阀传感器具有增强的交换钉扎场。

5. 发明申请

US20110111261A1 PERPENDICULAR MAGNETIC RECORDING MEDIA HAVING A DUAL ONSET LAYER 有权
标题翻译：具有双重ONSET层的PERPENDICULAR磁记录介质
公开(公告)号：US20110111261A1
公开(公告)日：2011-05-12
申请号：US12614598
申请日：2009-11-09
申请人： Xiaoping Bian , Jack Jyh-Kau Chang , Zhupei Shi
发明人： Xiaoping Bian , Jack Jyh-Kau Chang , Zhupei Shi
IPC分类号： G11B5/33 , G11B5/66 , B05D5/12
CPC分类号： G11B5/66 , G11B5/65 , G11B5/7325 , G11B5/738 , Y10T428/115
摘要： Perpendicular magnetic recording (PMR) media and methods of fabricating PMR media are described. The PMR media includes, among other layers, an underlayer, a first onset layer on the underlayer, a second onset layer on the first onset layer, and a perpendicular magnetic recording layer on the second onset layer. The second onset layer has a magnetic moment which is higher than both a magnetic moment of the first onset layer and a magnetic moment of the perpendicular magnetic recording layer.
摘要翻译：描述了垂直磁记录（PMR）介质和制造PMR介质的方法。除了其它层之外，PMR介质包括底层，底层上的第一起始层，第一起始层上的第二起始层和第二起始层上的垂直磁记录层。第二起始层具有高于第一起始层的磁矩和垂直磁记录层的磁矩的磁矩。

6. 发明授权

US06944938B1 Method of forming a magnetoresistive device 失效
标题翻译：形成磁阻器件的方法
公开(公告)号：US06944938B1
公开(公告)日：2005-09-20
申请号：US10976504
申请日：2004-10-29
申请人： Billy W. Crue, Jr. , Mark David Thomas , Zhupei Shi , Renuka Apparao
发明人： Billy W. Crue, Jr. , Mark David Thomas , Zhupei Shi , Renuka Apparao
IPC分类号： G11B5/127 , G11B5/39 , H04R31/00
CPC分类号： G11B5/39 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49071 , Y10T29/49073 , Y10T29/49798
摘要： A method of forming a head comprises forming a write transducer on a wafer, cutting the wafer to produce a slider bar with a cut surface, and planarizing the cut surface of the slider bar. Forming the write transducer can include forming a first pole layer and forming a first pole pedestal layer over the first pole layer, where the first pole pedestal layer includes a tapered portion defined by a first end having a nose width less than a desired final nose width, and a second end having a zero throat width greater than the desired final nose width. Planarizing the cut surface of the slider bar exposes the first pole pedestal layer until a width thereof approximately equals the desired final nose width.
摘要翻译：形成头部的方法包括在晶片上形成写入传感器，切割晶片以产生具有切割表面的滑动条，并平滑化滑块的切割表面。形成写传感器可以包括形成第一极层并在第一极层上形成第一极基座层，其中第一极基座层包括由第一端限定的锥形部分，第一端部的鼻部宽度小于期望的最终鼻部宽度，并且具有大于所需最终鼻宽度的零喉部宽度的第二端。平滑化滑块的切割表面暴露第一极基座层，直到其宽度大致等于期望的最终鼻部宽度。

7. 发明授权

US06633464B2 Synthetic antiferromagnetic pinned layer with Fe/FeSi/Fe system 失效
标题翻译：具有Fe / FeSi / Fe体系的合成反铁磁钉扎层
公开(公告)号：US06633464B2
公开(公告)日：2003-10-14
申请号：US09209060
申请日：1998-12-09
申请人： Chih-Huang Lai , Zhupei Shi , Hua-Ching Tong , Robert E. Rottmayer , Charles W. Miller
发明人： Chih-Huang Lai , Zhupei Shi , Hua-Ching Tong , Robert E. Rottmayer , Charles W. Miller
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/00 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , H01L43/08 , H01L43/12 , Y10T29/49034 , Y10T29/49044
摘要： A magnetoresistive (MR) device includes a synthetic antiferromagnetic (AFM) layer having an Fe/FeSi/Fe construction. A first Fe layer of the synthetic AFM layer has a magnetization substantially in a first direction, while a second Fe layer of the synthetic AFM layer has a magnetization substantially in a second direction that is substantially antiparallel to the first direction. The magnetoresistive device can be a spin valve in which a first surface of the synthetic AFM layer is adjacent to a pinning layer, and a second surface of the synthetic AFM layer is adjacent to a spacer layer. Further, the spin valve includes a free layer that overlies the spacer, thereby being separated from the synthetic AFM layer by the spacer. The pinning layer, synthetic AFM layer, spacer, and free layer can be bounded by a first shield and a second shield to provide magnetic shielding of the spin valve sensor.
摘要翻译：磁阻（MR）装置包括具有Fe / FeSi / Fe构造的合成反铁磁（AFM）层。合成AFM层的第一Fe层具有基本上在第一方向上的磁化，而合成AFM层的第二Fe层具有基本上在基本上与第一方向反平行的第二方向上的磁化。磁阻器件可以是自旋阀，其中合成AFM层的第一表面与钉扎层相邻，并且合成AFM层的第二表面与间隔层相邻。此外，自旋阀包括覆盖间隔物的自由层，从而通过间隔物与合成AFM层分离。钉扎层，合成AFM层，隔离层和自由层可以由第一屏蔽层和第二屏蔽层限定，以提供自旋阀传感器的磁屏蔽。

8. 发明授权

US06233116B1 Thin film write head with improved laminated flux carrying structure and method of fabrication 有权
标题翻译：具有改进的层叠助焊剂携带结构和制造方法的薄膜写头
公开(公告)号：US06233116B1
公开(公告)日：2001-05-15
申请号：US09192388
申请日：1998-11-13
申请人： Yingjian Chen , Zhupei Shi , Syed Hossain
发明人： Yingjian Chen , Zhupei Shi , Syed Hossain
IPC分类号： G11B5147
CPC分类号： G11B5/3109 , G11B5/3113 , G11B5/313 , G11B5/3156
摘要： The present invention provides a thin film write head having an improved laminated flux carrying structure and method of fabrication. The preferred embodiment provides laminated layers of: high moment magnetic material, and easily aligned high resistivity magnetic material. In the preferred embodiment, the easily aligned laminating layer induces uniaxial anisotropy, by exchange coupling, to improve uniaxial anisotropy in the high moment material. This allows deposition induced uniaxial anisotropy by DC magnetron sputtering and also provides improved post deposition annealing, if desired. It is preferred to laminate FeXN, such as FeRhN, or other crystalline structure material, with an amorphous alloy material, preferably Co based, such as CoZrCr. In the preferred embodiment, upper and lower pole structures may both be laminated as discussed above. Such laminated structures have higher Bs than structures with insulative laminates, and yokes and pole tips and may be integrally formed, if desired, because flux may travel along or across the laminating layers. The preferred embodiment of the present invention improves soft magnetic properties, reduces eddy currents, improves hard axis alignment while not deleteriously affecting the coercivity, permeability, and magnetostriction of the structure, thus allowing for improved high frequency operation.
摘要翻译：本发明提供一种具有改进的层叠助焊剂携带结构和制造方法的薄膜写入头。优选的实施例提供了叠层层：高力矩磁性材料和容易对准的高电阻率磁性材料。在优选实施例中，容易对准的层压层通过交换耦合引起单轴各向异性，以提高高力矩材料中的单轴各向异性。这允许通过DC磁控溅射沉积诱导的单轴各向异性，并且如果需要，还提供改进的后沉积退火。优选将FeXN如FeRhN或其它晶体结构材料与非晶合金材料（优选Co基）如CoZrCr层压。在优选实施例中，如上所述，可以将上极和下极结构层叠。如果需要，这种层压结构具有比具有绝缘层压板的结构更高的Bs，并且轭和磁极尖端可以一体地形成，因为焊剂可以沿着或穿过层压层行进。本发明的优选实施例提高了软磁性能，降低涡流，改善了硬轴对准，同时不会有害地影响结构的矫顽力，磁导率和磁致伸缩，从而改善了高频运行。

9. 发明申请

US20100067149A1 SYSTEM, METHOD AND APPARATUS FOR ONSET MAGNETIC OXIDE LAYER FOR HIGH PERFORMANCE PERPENDICULAR MAGNETIC RECORDING MEDIA 有权
标题翻译：用于高性能电磁记录介质的磁性氧化层的系统，方法和装置
公开(公告)号：US20100067149A1
公开(公告)日：2010-03-18
申请号：US12210603
申请日：2008-09-15
申请人： Xiaoping Bian , Jyh-Kau Chang , Weikang Shen , Zhupei Shi , Kai Tang
发明人： Xiaoping Bian , Jyh-Kau Chang , Weikang Shen , Zhupei Shi , Kai Tang
IPC分类号： G11B5/54 , B05D5/12 , G11B5/66
CPC分类号： G11B5/667 , B82Y25/00 , B82Y40/00 , G11B5/66 , G11B5/82 , G11B5/8404 , H01F10/30 , H01F41/302
摘要： Perpendicular magnetic recording media has been enhanced by controlling the initial growth of magnetic oxide layers and increased magnetic isolation between the grains in the initial magnetic layer. An onset magnetic oxide layer is sputter deposited in an argon-oxygen gas mixture between the main CoPtCr-oxide magnetic layers and the underlying Ru layer. The insertion of the onset magnetic oxide layer enhances the coercivity of the oxide magnetic layers and also improves the nucleation field. The media signal-to-noise ratio and bit error rate also are significantly improved due to the improvement of the initial segregation of Co magnetic grains in the magnetic oxide layers.
摘要翻译：通过控制磁性氧化物层的初始生长和增加初始磁性层中的晶粒之间的磁隔离，增强了垂直磁记录介质。起始磁性氧化物层溅射沉积在主CoPtCr-氧化物磁性层和下面的Ru层之间的氩 - 氧气体混合物中。开始的磁性氧化物层的插入增强了氧化物磁性层的矫顽力，并且还改善了成核场。由于磁性氧化物层中Co磁性晶粒的初始偏析的改善，介质信噪比和误码率也显着提高。

10. 发明申请

US20080062549A1 Method and system for testing of magnetic disks using F-BER 失效
标题翻译：使用F-BER测试磁盘的方法和系统
公开(公告)号：US20080062549A1
公开(公告)日：2008-03-13
申请号：US11515164
申请日：2006-09-01
申请人： Shanlin Duan , Zhupei Shi , Li Tang , Jane Jie Zhang
发明人： Shanlin Duan , Zhupei Shi , Li Tang , Jane Jie Zhang
IPC分类号： G11B27/36 , G11B5/09
CPC分类号： G11B19/048
摘要： Spinstand test improvement that measures Functional Byte Error Rate (F-BER) of a disk. The F-BER is correlated to the BER of a disk. The F-BER test is faster than a BER test. The F-BER test is incorporated into a spinstand tester or the software associated with a spinstand tester.
摘要翻译： Spinstand测试改进，用于测量磁盘的功能字节错误率（F-BER）。 F-BER与磁盘的BER相关。 F-BER测试比BER测试更快。 F-BER测试被并入到一个纺锤体测试仪或与一个纺锤体测试仪相关联的软件中。

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