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1. 发明授权

US06579420B2 Apparatus and method for uniformly depositing thin films over substrates 失效
公开(公告)号：US06579420B2
公开(公告)日：2003-06-17
申请号：US09780212
申请日：2001-02-09
申请人： Zhimin Wan , Jiong Chen , Peiching Ling , Jianmin Qiao
发明人： Zhimin Wan , Jiong Chen , Peiching Ling , Jianmin Qiao
IPC分类号： C23C1600
CPC分类号： C23C14/505 , C23C14/044 , C23C14/46
摘要： A thin film deposition apparatus and method are disclosed in this invention. The apparatus includes a depositing thin-film particle source, a beam-defining aperture between the particle source and the deposited substrate(s), and a substrate holder to rotate the substrate(s) around its center and move the center along a lateral path so that the substrate(s) can scan across the particle beam from one substrate edge to the other edge. The method includes a step of providing a vacuum chamber for containing a thin-film particle source for generating thin-film particles to deposit a thin-film on the substrates. The method further includes a step of containing a substrate holder in the vacuum chamber for holding a plurality of substrates having a thin-film deposition surface of each substrate facing the beam of thin-film particles. The method further includes a step of providing a rotational means for rotating the substrate holder to rotate each of the substrates exposed to the thin-film particles for depositing a thin film thereon. And, the method further includes a step of providing a laterally reciprocal moving means for reciprocally moving said substrate holder for said beam traversing on said substrate holder from one side of the edge to the other side of the edge or at least passing through the central area of said substrate holder.

2. 发明授权

US06710358B1 Apparatus and method for reducing energy contamination of low energy ion beams 失效
标题翻译：降低能量离子束能量污染的装置和方法
公开(公告)号：US06710358B1
公开(公告)日：2004-03-23
申请号：US09513396
申请日：2000-02-25
申请人： Jiong Chen , Peiching Ling
发明人： Jiong Chen , Peiching Ling
IPC分类号： G21K510
CPC分类号： H01J37/3171 , H01J2237/05
摘要： An ion implantation method for reducing energy contamination in low energy beams is disclosed in this invention. The ion implantation method requires the use of a target chamber for containing a target for implantation in vacuum and an ion source chamber with an ion source for generating an ion beam. A means for conducting a mass analysis of the ion beam, such as an analyzer magnet, is also needed. The ion source chamber includes a beam deceleration optics that includes a beam deceleration means for decelerating the ion beam for producing a low energy ion beam. The beam deceleration optics further includes a beam steering means for generating an electrostatic field for steering the ion beam to a targeted ion-beam direction and separating neutralized particles from the ion beam by allowing the neutralized particles to transmit in a neutralized-particle direction slightly different from the targeted ion-beam direction. The ion beam steering means further includes a beam stopper for blocking said neutralized particles from reaching said target of implantation that minimizes energy contamination from high energy neutralized particles.
摘要翻译：在本发明中公开了一种用于减少能量束中的能量污染的离子注入方法。离子注入方法需要使用目标室来容纳用于在真空中注入的靶和具有用于产生离子束的离子源的离子源室。还需要用于进行离子束的质量分析的装置，例如分析器磁体。离子源室包括光束减速光学器件，其包括用于减小离子束以产生低能量离子束的光束减速装置。光束减速光学元件进一步包括光束转向装置，用于产生用于将离子束转向目标离子束方向的静电场，并且通过允许中和的颗粒在中和颗粒方向上稍微不同的透射从离子束分离中和的颗粒从目标离子束方向。离子束转向装置还包括用于阻挡所述被中和的颗粒到达所述注入目标的束塞，其最小化来自高能中和颗粒的能量污染。

3. 发明授权

US06865065B1 Semiconductor processing chamber substrate holder method and structure 失效
标题翻译：半导体处理室衬底保持器的方法和结构
公开(公告)号：US06865065B1
公开(公告)日：2005-03-08
申请号：US10054373
申请日：2002-01-22
申请人： Jiong Chen , Jihliang Chen , Jianmin Qiao
发明人： Jiong Chen , Jihliang Chen , Jianmin Qiao
IPC分类号： C23C14/48 , C23C14/50 , H01L21/683 , H01L21/687 , H05F23/00
CPC分类号： H01L21/6831 , C23C14/48 , C23C14/50 , H01J37/34 , H01J2237/20 , H01J2237/31701 , H01L21/68721 , H01L21/68735 , H01L21/68764 , H01L21/68771 , Y10T137/87209
摘要： A method and system for processing wafers is disclosed. According to one embodiment (100) a chuck system (102) may be situated opposite to an input source (104). A chuck system (102) may apply a force (e.g., mechanical and/or electromagnetic) that deforms a substrate (108). Once deformed, essentially all of a substrate (108) may be oriented at a predetermined angle (e.g., 90°) with respect to an input source (104).
摘要翻译：公开了一种用于处理晶片的方法和系统。根据一个实施例（100），卡盘系统（102）可以位于与输入源（104）相对的位置。卡盘系统（102）可以施加使基底（108）变形的力（例如机械和/或电磁）。一旦变形，基本上所有的衬底（108）可以相对于输入源（104）以预定角度（例如，90°）定向。

4. 发明授权

US06806479B1 Apparatus and method for reducing implant angle variations across a large wafer for a batch disk 有权
标题翻译：用于减少用于批盘的大晶片上的植入角度变化的装置和方法
公开(公告)号：US06806479B1
公开(公告)日：2004-10-19
申请号：US10641219
申请日：2003-08-13
申请人： Zhimin Wan , Jiong Chen , John D. Pollock
发明人： Zhimin Wan , Jiong Chen , John D. Pollock
IPC分类号： H01J3720
CPC分类号： H01J37/3171 , H01J37/20 , H01J2237/201 , H01J2237/20214
摘要： A method to rotate individual pad of a batch disk to an implant angle and lock them in place, with the pad surface having conical or near conical surface to minimize the implant angle variation across a wafer on the pad for both tilt angle and twist angle, at large tilt angle implant. The implanter includes a disk with multiple attached pads that can hold substrates securely when the hub is at rest or rotates. The disk rotates around its spin axis, which moves laterally at a programmed speed profile so that all substrates on the hub can get evenly touched by the fixed ion beam. The pad rotation axis is at an angle with the disk spin axis, and the angle is preferable 90 degrees. The nominal of the pad surface is at an angle, i.e., a tilt angle, relative to the incident ion beam. A rotation mechanism is applied to each individual pad to rotate the pad to the desired tilt angle. A locking mechanism is applied to each individual pad assembly to lock the pad at the desired tilt angle with minimum angle variation under high centrifugal force during fast disk spin. The locking mechanism includes: a) add brake to the rotation mechanism in the pad assembly so that the pad cannot rotate due to mechanical friction force or lock-key. B) use motor to hold the pad assembly. The sum of the friction torque and the motor holding torque should be larger than the centrifugal torque. A torque balancing mechanism is applied to pad mechanical design to minimize the total pad rotation torque under centrifugal force during fast disk spin by adding mass to counter balance the original wafer pad mass.
摘要翻译：一种将批盘的单个垫片旋转到植入角度并将其锁定在适当位置的方法，其中垫表面具有圆锥形或近圆锥形表面，以最小化用于倾斜角度和扭转角度的衬垫上的晶片上的植入角度变化，在大倾角植入。注入机包括具有多个附接垫的盘，当轮毂处于静止或转动时，该盘可以牢固地保持衬底。磁盘围绕其旋转轴旋转，其以编程的速度轮廓横向移动，使得轮毂上的所有基底可以被固定的离子束均匀地接触。衬垫旋转轴与盘旋转轴成一定角度，该角度优选为90度。焊盘表面的标称是相对于入射离子束成一定角度，即倾斜角。旋转机构被施加到每个单独的垫以将垫旋转到期望的倾斜角。将锁定机构应用于每个单独的垫组件，以在快速盘旋转期间在高离心力下以最小的角度变化将垫锁定在期望的倾斜角度。该锁定机构包括：a）向衬垫组件中的旋转机构添加制动器，使得垫片由于机械摩擦力或锁定键不能旋转。 B）使用马达来固定垫组件。摩擦转矩和电机保持转矩的总和应大于离心力矩。应用扭矩平衡机构进行垫片机械设计，以通过增加质量来平衡原始晶片垫块，从而在快速盘旋转期间在离心力下最小化总垫片旋转扭矩。

5. 发明授权

US06918351B2 Apparatus for ion beam implantation 失效
标题翻译：离子束注入装置
公开(公告)号：US06918351B2
公开(公告)日：2005-07-19
申请号：US10133140
申请日：2002-04-26
申请人： Jiong Chen , Zhimin Wan
发明人： Jiong Chen , Zhimin Wan
IPC分类号： H01J37/317 , C23C16/00 , H01G37/317
CPC分类号： H01J37/3171 , H01J2237/0041
摘要： This invention discloses an ion implantation apparatus that has an ion source and an ion extraction device for extracting an ion beam therefrom. The ion implantation apparatus includes an ion beam sweeping-and-deflecting device disposed immediately next to the ion extraction device. The ion implantation apparatus further includes a magnetic analyzer for guiding the ion beam passed through the deflecting-and-sweeping device. The mass analyzer is also used for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. The sweeping-and-deflecting device is applied to deflect the ion beam to project through the magnetic mass analyzer and the mass slit for sweeping the ion beam over a surface of the substrate to carry out an ion implantation.
摘要翻译：本发明公开了一种具有离子源和离子提取装置的离子注入装置，用于从其中提取离子束。离子注入装置包括紧邻离子提取装置设置的离子束扫掠和偏转装置。离子注入装置还包括用于引导穿过偏转扫掠装置的离子束的磁分析器。质量分析仪还用于选择具有特定质荷比的离子以通过质量狭缝投射到基底上。施加扫掠和偏转装置以使离子束偏转穿过磁性质量分析器和质量狭缝，以将离子束扫过衬底的表面以进行离子注入。

6. 发明申请

US20100237260A1 Ion implantation systems 有权
标题翻译：离子注入系统
公开(公告)号：US20100237260A1
公开(公告)日：2010-09-23
申请号：US12661523
申请日：2010-03-18
申请人： Jiong Chen
发明人： Jiong Chen
IPC分类号： H01J37/317
CPC分类号： H01J37/05 , H01J37/3171 , H01J2237/047 , H01J2237/31701
摘要： An ion implantation apparatus of high energy is disclosed in this invention. The new and improved system can have a wide range of ion beam energy at high beam transmission rates and flexible operation modes for different ion species. This high energy implantation system can be converted into a medium current by removing RF linear ion acceleration unit.
摘要翻译：本发明公开了一种高能离子注入装置。新的和改进的系统可以在远光透射率下具有广泛的离子束能量和对于不同的离子种类具有灵活的操作模式。这种高能量注入系统可以通过去除RF线性离子加速单元而转换为中等电流。

7. 发明授权

US07772571B2 Implant beam utilization in an ion implanter 有权
标题翻译：植入物束在离子注入机中的利用
公开(公告)号：US07772571B2
公开(公告)日：2010-08-10
申请号：US11868851
申请日：2007-10-08
申请人： Cheng-Hui Shen , Donald Wayne Berrian , Jiong Chen
发明人： Cheng-Hui Shen , Donald Wayne Berrian , Jiong Chen
IPC分类号： G21K5/10 , H01J37/08 , A61N5/00 , G21G5/00 , G06F19/00
CPC分类号： G21K5/10 , H01J37/304 , H01J37/3171 , H01J2237/20228 , H01J2237/31703 , H01L21/68764
摘要： To select a scan distance to be used in scanning a wafer with an implant beam, a dose distribution along a first direction is calculated based on size or intensity of the implant beam and a scan distance. The scan distance is the distance measured in the first direction between a first path and a final path of the implant beam scanning the wafer along a second direction in multiple paths. A relative velocity profile along the second direction is determined based on the dose distribution. Dose uniformity on the wafer is calculated based on the wafer being scanned using the relative velocity profile and the determined dose distribution. The scan distance is adjusted and the preceding steps are repeated until the calculated dose uniformity meets one or more uniformity criteria.
摘要翻译：为了选择用于用植入物束扫描晶片的扫描距离，基于植入物束的尺寸或强度以及扫描距离来计算沿着第一方向的剂量分布。扫描距离是在多条路径中沿着第二方向扫描晶片的植入光束的第一路径和最终路径之间的第一方向上测量的距离。基于剂量分布确定沿着第二方向的相对速度分布。基于使用相对速度分布和确定的剂量分布扫描的晶片来计算晶片上的剂量均匀性。调整扫描距离，并重复前述步骤，直到计算的剂量均匀性满足一个或多个均匀性标准。

8. 发明申请

US20090090876A1 IMPLANT BEAM UTILIZATION IN AN ION IMPLANTER 有权
标题翻译：在离子植入物中的植入物束的利用
公开(公告)号：US20090090876A1
公开(公告)日：2009-04-09
申请号：US11868851
申请日：2007-10-08
申请人： Cheng-Hui Shen , Donald Wayne Berrian , Jiong Chen
发明人： Cheng-Hui Shen , Donald Wayne Berrian , Jiong Chen
IPC分类号： G21K5/10
CPC分类号： G21K5/10 , H01J37/304 , H01J37/3171 , H01J2237/20228 , H01J2237/31703 , H01L21/68764
摘要： To select a scan distance to be used in scanning a wafer with an implant beam, a dose distribution along a first direction is calculated based on size or intensity of the implant beam and a scan distance. The scan distance is the distance measured in the first direction between a first path and a final path of the implant beam scanning the wafer along a second direction in multiple paths. A relative velocity profile along the second direction is determined based on the dose distribution. Dose uniformity on the wafer is calculated based on the wafer being scanned using the relative velocity profile and the determined dose distribution. The scan distance is adjusted and the preceding steps are repeated until the calculated dose uniformity meets one or more uniformity criteria.
摘要翻译：为了选择用于用植入物束扫描晶片的扫描距离，基于植入物束的尺寸或强度以及扫描距离来计算沿着第一方向的剂量分布。扫描距离是在多条路径中沿着第二方向扫描晶片的植入光束的第一路径和最终路径之间的第一方向上测量的距离。基于剂量分布确定沿着第二方向的相对速度分布。基于使用相对速度分布和确定的剂量分布扫描的晶片计算晶片上的剂量均匀性。调整扫描距离，并重复前述步骤，直到计算的剂量均匀性满足一个或多个均匀性标准。

9. 发明申请

US20080230712A1 BEAM CONTROL ASSEMBLY FOR RIBBON BEAM OF IONS FOR ION IMPLANTATION 有权
标题翻译：用于离子植入的离子束束的束控制组件
公开(公告)号：US20080230712A1
公开(公告)日：2008-09-25
申请号：US12053076
申请日：2008-03-21
申请人： Jiong Chen
发明人： Jiong Chen
IPC分类号： H01J3/14 , G21K5/04
CPC分类号： H01J37/32669 , G21K1/093 , G21K5/04 , H01J37/1471 , H01J37/3007 , H01J37/3171 , H01J37/3172 , H01J2237/24542
摘要： A beam control assembly to shape a ribbon beam of ions for ion implantation includes a first bar, second bar, first coil of windings of electrical wire, second coil of windings of electrical wire, first electrical power supply, and second electrical power supply. The first coil is disposed on the first bar. The first coil is the only coil disposed on the first bar. The second bar is disposed opposite the first bar with a gap defined between the first and second bars. The ribbon beam travels between the gap. The second coil is disposed on the second bar. The second coil is the only coil disposed on the second bar. The first electrical power supply is connected to the first coil without being electrically connected to any other coil. The second electrical power supply is connected to the second coil without being electrically connected to any other coil.
摘要翻译：用于成形用于离子注入的离子束带的束控制组件包括第一杆，第二杆，电线的绕组的第一线圈，电线的第二绕组线圈，第一电源和第二电源。第一线圈设置在第一杆上。第一线圈是设置在第一条上的唯一线圈。第二杆与第一杆相对地设置，在第一和第二杆之间限定间隙。带状光束在间隙之间传播。第二线圈设置在第二杆上。第二线圈是设置在第二杆上的唯一线圈。第一电源连接到第一线圈而不与任何其它线圈电连接。第二电源连接到第二线圈而不与任何其它线圈电连接。

10. 发明授权

US08044375B2 Apparatus and method for ion beam implantation using scanning and spot beams 有权
标题翻译：使用扫描和点光束进行离子束注入的装置和方法
公开(公告)号：US08044375B2
公开(公告)日：2011-10-25
申请号：US12661480
申请日：2010-03-18
申请人： Jiong Chen
发明人： Jiong Chen
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/05 , H01J37/1475 , H01J2237/153 , H01J2237/166 , H01J2237/24528 , H01J2237/24542 , H01J2237/30433 , H01J2237/30483
摘要： An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for forming a converging beam on AMU-non-dispersive plane therefrom. The ion implantation apparatus includes magnetic scanner prior to a magnetic analyzer for scanning the beam on the non-dispersive plane, the magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. A rectangular quadruple magnet is provided to collimate the scanned ion beam and fine corrections of the beam incident angles onto a target. A deceleration or acceleration system incorporating energy filtering is at downstream of the beam collimator. A two-dimensional mechanical scanning system for scanning the target is disclosed, in which a beam diagnostic means is build in.
摘要翻译：公开了一种具有多种工作模式的离子注入装置。离子注入装置具有离子源和用于在其AMU非分散平面上形成会聚束的离子提取装置。离子注入装置包括在用于扫描非分散平面上的束的磁分析仪之前的磁扫描器，用于选择具有特定质荷比的离子的磁分析器通过质量狭缝以投射到基底上。提供矩形四极磁体以准直扫描的离子束并将光束入射角精细校正到目标上。结合能量过滤的减速或加速系统位于射束准直仪的下游。公开了一种用于扫描目标的二维机械扫描系统，其中构建了光束诊断装置。

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