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1. 发明授权

US07639351B2 Automated process control using optical metrology with a photonic nanojet 失效
标题翻译：使用光子纳米喷射技术进行光学测量的自动过程控制
公开(公告)号：US07639351B2
公开(公告)日：2009-12-29
申请号：US11726076
申请日：2007-03-20
申请人： Zhigang Chen , Hanyou Chu , Shifang Li , Manuel Madriaga
发明人： Zhigang Chen , Hanyou Chu , Shifang Li , Manuel Madriaga
IPC分类号： G01N21/00
CPC分类号： G01B11/046 , B82Y15/00 , B82Y30/00 , G01B11/06 , G01N2201/0639
摘要： A fabrication cluster can be controlled using optical metrology. A fabrication process is performed on a wafer using a fabrication cluster. A photonic nanojet, an optical intensity pattern induced at a shadow-side surface of a dielectric microsphere, is generated. An inspection area on the wafer is scanned with the photonic nanojet. A measurement is obtained of the retroreflected light from the dielectric microsphere as the photonic nanojet scans the inspection area. The existence of a structure in the inspection area is determined with the obtained measurement of the retroreflected light. One or more process parameters of the fabrication cluster is adjusted based on the determination of the existence of the structure in the inspection area.
摘要翻译：可以使用光学计量来控制制造集群。使用制造集群在晶片上进行制造工艺。产生光电纳米喷墨，在电介质微球的阴影侧表面处诱导的光强度图案。使用光子纳米喷墨扫描晶片上的检查区域。当光子纳米喷墨扫描检查区域时，获得来自电介质微球的回射光的测量。通过获得的回射光的测量来确定检查区域中的结构的存在。基于检查区域中结构的存在的确定来调整制造簇的一个或多个处理参数。

2. 发明授权

US07394535B1 Optical metrology using a photonic nanojet 失效
标题翻译：光学计量学使用光子纳米喷墨
公开(公告)号：US07394535B1
公开(公告)日：2008-07-01
申请号：US11726083
申请日：2007-03-20
申请人： Zhigang Chen , Hanyou Chu , Shifang Li
发明人： Zhigang Chen , Hanyou Chu , Shifang Li
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , B82Y20/00 , G01B11/2518 , G01N21/94 , G01N21/95607 , G01N2201/0639 , H01L22/12
摘要： An inspection area on a semiconductor wafer can be examined using a photonic nanojet. The photonic nanojet, an optical intensity pattern induced at a shadow-side surface of a dielectric microsphere, is generated. The inspection area is scanned with the photonic nanojet. A measurement is obtained of the retroreflected light from the dielectric microsphere as the photonic nanojet scans the inspection area. The existence of a structure in the inspection area is determined with the obtained measurement of the retroreflected light.
摘要翻译：可以使用光子纳米喷嘴来检查半导体晶片上的检查区域。产生光子纳米喷墨，在电介质微球的阴影侧表面处引起的光强度图案。用光子纳米喷枪扫描检查区域。当光子纳米喷墨扫描检查区域时，获得来自电介质微球的回射光的测量。通过获得的回射光的测量来确定检查区域中的结构的存在。

3. 发明申请

US20080231863A1 Automated process control using optical metrology with a photonic nanojet 失效
标题翻译：使用光子纳米喷射技术进行光学测量的自动过程控制
公开(公告)号：US20080231863A1
公开(公告)日：2008-09-25
申请号：US11726076
申请日：2007-03-20
申请人： Zhigang Chen , Hanyou Chu , Shifang Li , Manuel Madriaga
发明人： Zhigang Chen , Hanyou Chu , Shifang Li , Manuel Madriaga
IPC分类号： G01B11/24 , G01N21/00
CPC分类号： G01B11/046 , B82Y15/00 , B82Y30/00 , G01B11/06 , G01N2201/0639
摘要： A fabrication cluster can be controlled using optical metrology. A fabrication process is performed on a wafer using a fabrication cluster. A photonic nanojet, an optical intensity pattern induced at a shadow-side surface of a dielectric microsphere, is generated. An inspection area on the wafer is scanned with the photonic nanojet. A measurement is obtained of the retroreflected light from the dielectric microsphere as the photonic nanojet scans the inspection area. The existence of a structure in the inspection area is determined with the obtained measurement of the retroreflected light. One or more process parameters of the fabrication cluster is adjusted based on the determination of the existence of the structure in the inspection area.
摘要翻译：可以使用光学计量来控制制造集群。使用制造集群在晶片上进行制造工艺。产生光电纳米喷墨，在电介质微球的阴影侧表面处诱导的光强度图案。使用光子纳米喷墨扫描晶片上的检查区域。当光子纳米喷墨扫描检查区域时，获得来自电介质微球的回射光的测量。通过获得的回射光的测量来确定检查区域中的结构的存在。基于检查区域中结构的存在的确定来调整制造簇的一个或多个处理参数。

4. 发明授权

US09625937B2 Computation efficiency by diffraction order truncation 有权
$Computation efficiency by diffraction order truncation$
公开(公告)号：US09625937B2
公开(公告)日：2017-04-18
申请号：US12193341
申请日：2008-08-18
申请人： Joerg Bischoff , Shifang Li , Weidong Yang , Hanyou Chu
发明人： Joerg Bischoff , Shifang Li , Weidong Yang , Hanyou Chu
IPC分类号： G06F7/60 , G06G7/48 , G06E1/00
CPC分类号： G06E1/00
摘要： A method for improving computation efficiency for diffraction signals in optical metrology is described. The method includes simulating a set of diffraction orders for a three-dimensional structure. The diffraction orders within the set of diffraction orders are then prioritized. The set of diffraction orders is truncated to provide a truncated set of diffraction orders based on the prioritizing. Finally, a simulated spectrum is provided based on the truncated set of diffraction orders.

5. 发明授权

US08069020B2 Generating simulated diffraction signal using a dispersion function relating process parameter to dispersion 有权
$Generating simulated diffraction signal using a dispersion function relating process parameter to dispersion$
标题翻译：使用将过程参数与色散相关联的色散函数生成模拟衍射信号
公开(公告)号：US08069020B2
公开(公告)日：2011-11-29
申请号：US11858058
申请日：2007-09-19
申请人： Shifang Li , Hanyou Chu
发明人： Shifang Li , Hanyou Chu
IPC分类号： G06G7/48
CPC分类号： G01N21/4788 , G01N21/211 , G01N21/9501 , G01N2021/8411 , G03F7/70625
摘要： A first wafer is fabricated using a first value for a process parameter specifying a process condition in fabricating the structure. A first value of a dispersion is measured from the first wafer. A second wafer is fabricated using a second value for the process parameter. A second value of the dispersion is measured from the second wafer. A third wafer is fabricated using a third value for the process parameter. The first, second, and third values for the process parameter are different from each other. A third value of the dispersion is measured from the third wafer. A dispersion function is defined to relate the process parameter to the dispersion using the first, second, and third values for the process parameter and the measured first, second, and third values of the dispersion. The simulated diffraction signal is generated using the defined dispersion function. The simulated diffraction signal is stored.
摘要翻译：使用用于指定制造结构中的工艺条件的工艺参数的第一值来制造第一晶片。从第一晶片测量分散体的第一值。使用用于工艺参数的第二值制造第二晶片。从第二晶片测量第二个色散值。使用工艺参数的第三值制造第三晶片。过程参数的第一，第二和第三个值彼此不同。从第三晶片测量分散体的第三值。定义了色散函数，以使用过程参数的第一，第二和第三值以及色散的测量的第一，第二和第三值将过程参数与色散相关联。使用定义的色散函数生成模拟衍射信号。存储模拟衍射信号。

6. 发明授权

US07639375B2 Determining transmittance of a photomask using optical metrology 失效
标题翻译：使用光学测量法确定光掩模的透射率
公开(公告)号：US07639375B2
公开(公告)日：2009-12-29
申请号：US11639974
申请日：2006-12-14
申请人： Sanjay Yedur , Shifang Li , Youxian Wen , Wei Liu , Hanyou Chu , Ying Ying Luo
发明人： Sanjay Yedur , Shifang Li , Youxian Wen , Wei Liu , Hanyou Chu , Ying Ying Luo
IPC分类号： G01B11/14
CPC分类号： G06T7/0004 , G03F1/84 , G03F7/70591 , G03F7/70941 , G06T2207/30148
摘要： Transmittance of a photomask is determined using optical metrology. In particular, reflectance of a portion of the photomask is determined by directing an incident beam of light at the portion of the photomask. The reflectance is determined by measuring light diffracted from the portion of the photomask. One or more geometric features of the portion of the photomask are determined using the measured light diffracted from the portion of the photomask. A wave coupling is determined using the determined one or more geometric features of the portion of the photomask. The transmittance of the photomask is determined using the determined wave coupling and the determined reflectance of the portion of the photomask.
摘要翻译：使用光学测量法确定光掩模的透射率。特别地，光掩模的一部分的反射率通过在光掩模的部分引导入射光束来确定。通过测量从光掩模的部分衍射的光来确定反射率。使用从光掩模的部分衍射的测量光来确定光掩模的该部分的一个或多个几何特征。使用所确定的光掩模部分的一个或多个几何特征来确定波耦合。使用确定的波耦合和所确定的光掩模的部分的反射率来确定光掩模的透射率。

7. 发明申请

US20080144919A1 Determining transmittance of a photomask using optical metrology 失效
标题翻译：使用光学测量法确定光掩模的透射率
公开(公告)号：US20080144919A1
公开(公告)日：2008-06-19
申请号：US11639974
申请日：2006-12-14
申请人： Sanjay Yedur , Shifang Li , Youxian Wen , Wei Liu , Hanyou Chu , Ying Ying Luo
发明人： Sanjay Yedur , Shifang Li , Youxian Wen , Wei Liu , Hanyou Chu , Ying Ying Luo
IPC分类号： G06K9/00
CPC分类号： G06T7/0004 , G03F1/84 , G03F7/70591 , G03F7/70941 , G06T2207/30148
摘要： Transmittance of a photomask is determined using optical metrology. In particular, reflectance of a portion of the photomask is determined by directing an incident beam of light at the portion of the photomask. The reflectance is determined by measuring light diffracted from the portion of the photomask. One or more geometric features of the portion of the photomask are determined using the measured light diffracted from the portion of the photomask. A wave coupling is determined using the determined one or more geometric features of the portion of the photomask. The transmittance of the photomask is determined using the determined wave coupling and the determined reflectance of the portion of the photomask.
摘要翻译：使用光学测量法确定光掩模的透射率。特别地，光掩模的一部分的反射率通过在光掩模的部分引导入射光束来确定。通过测量从光掩模的部分衍射的光来确定反射率。使用从光掩模的部分衍射的测量光来确定光掩模的该部分的一个或多个几何特征。使用所确定的光掩模部分的一个或多个几何特征来确定波耦合。使用确定的波耦合和所确定的光掩模的部分的反射率来确定光掩模的透射率。

8. 发明申请

US20100042388A1 COMPUTATION EFFICIENCY BY DIFFRACTION ORDER TRUNCATION 有权
标题翻译：通过衍生顺序交换计算效率
公开(公告)号：US20100042388A1
公开(公告)日：2010-02-18
申请号：US12193341
申请日：2008-08-18
申请人： Joerg Bischoff , Shifang Li , Weidong Yang , Hanyou Chu
发明人： Joerg Bischoff , Shifang Li , Weidong Yang , Hanyou Chu
IPC分类号： G06G7/62
CPC分类号： G06E1/00
摘要： A method for improving computation efficiency for diffraction signals in optical metrology is described. The method includes simulating a set of diffraction orders for a three-dimensional structure. The diffraction orders within the set of diffraction orders are then prioritized. The set of diffraction orders is truncated to provide a truncated set of diffraction orders based on the prioritizing. Finally, a simulated spectrum is provided based on the truncated set of diffraction orders.
摘要翻译：描述了一种提高光学测量中衍射信号的计算效率的方法。该方法包括模拟一组三维结构的衍射级数。然后优先考虑该组衍射级中的衍射级。衍射级的集合被截断以提供基于优先级的截断的衍射级集合。最后，基于截断的衍射级组提供了一个模拟光谱。

9. 发明授权

US07636649B2 Automated process control of a fabrication tool using a dispersion function relating process parameter to dispersion 失效
标题翻译：使用将过程参数与色散相关联的色散函数对制造工具进行自动化过程控制
公开(公告)号：US07636649B2
公开(公告)日：2009-12-22
申请号：US11859669
申请日：2007-09-21
申请人： Shifang Li , Hanyou Chu , Manuel Madriaga
发明人： Shifang Li , Hanyou Chu , Manuel Madriaga
IPC分类号： G05B17/00 , G06F19/00 , G06F17/40
CPC分类号： G01B11/0625 , H01L22/12
摘要： An optical metrology model for the structure is obtained. The optical metrology model comprising one or more profile parameters, one or more process parameters, and a dispersion. A dispersion function that relates the dispersion to at least one of the one or more process parameters is obtained. A simulated diffraction signal is generated using the optical metrology model and a value for the at least one of the process parameters and a value for the dispersion. The value for the dispersion is calculated using the value for the at least one of the process parameter and the dispersion function. A measured diffraction signal of the structure is obtained using an optical metrology tool. The measured diffraction signal is compared to the simulated diffraction signal to determine one or more profile parameters of the structure. The fabrication tool is controlled based on the determined one or more profile parameters of the structure.
摘要翻译：获得了该结构的光学计量学模型。光学测量模型包括一个或多个轮廓参数，一个或多个过程参数和分散体。获得将色散与一个或多个工艺参数中的至少一个相关联的色散函数。使用光学测量模型生成模拟衍射信号，并且生成至少一个工艺参数的值和色散值。使用过程参数和色散函数中的至少一个的值来计算色散的值。使用光学测量工具获得该结构的测量的衍射信号。将测量的衍射信号与模拟的衍射信号进行比较，以确定结构的一个或多个轮廓参数。基于确定的结构的一个或多个轮廓参数来控制制造工具。

10. 发明授权

US07912679B2 Determining profile parameters of a structure formed on a semiconductor wafer using a dispersion function relating process parameter to dispersion 有权
标题翻译：使用将工艺参数与分散相关的色散函数确定在半导体晶片上形成的结构的轮廓参数
公开(公告)号：US07912679B2
公开(公告)日：2011-03-22
申请号：US11858882
申请日：2007-09-20
申请人： Shifang Li , Hanyou Chu
发明人： Shifang Li , Hanyou Chu
IPC分类号： G06F19/00 , G06F17/40
CPC分类号： H01L22/12 , G03F7/705 , G03F7/70625
摘要： An optical metrology model is created for a structure formed on a semiconductor wafer. The optical metrology model comprises one or more profile parameters, one or more process parameters, and dispersion. A dispersion function is obtained that relates the dispersion to at least one of the one or more process parameters. A simulated diffraction signal is generated using the optical metrology model and a value for the at least one of the process parameters and a value for the dispersion. The value for the dispersion is calculated using the value for the at least one of the process parameter and the dispersion function. A measured diffraction signal of the structure is obtained. The measured diffraction signal is compared to the simulated diffraction signal. One or more profile parameters of the structure and one or more process parameters are determined based on the comparison of the measured diffraction signal to the simulated diffraction signal.
摘要翻译：为在半导体晶片上形成的结构创建光学计量模型。光学测量模型包括一个或多个轮廓参数，一个或多个过程参数和色散。获得将色散与一个或多个工艺参数中的至少一个相关联的色散函数。使用光学测量模型生成模拟衍射信号，并且生成至少一个工艺参数的值和色散值。使用过程参数和色散函数中的至少一个的值来计算色散的值。获得该结构的测量衍射信号。将测得的衍射信号与模拟衍射信号进行比较。基于测量的衍射信号与模拟衍射信号的比较来确定结构的一个或多个轮廓参数和一个或多个过程参数。

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