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1. 发明授权

US06498707B1 Giant magnetoresistive sensor with a CrMnPt pinning layer and a NiFeCr seed layer 有权
标题翻译：具有CrMnPt钉扎层和NiFeCr种子层的巨磁阻传感器
公开(公告)号：US06498707B1
公开(公告)日：2002-12-24
申请号：US09367952
申请日：1999-08-25
申请人： Zheng Gao , Song S. Xue , Sining Mao
发明人： Zheng Gao , Song S. Xue , Sining Mao
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996
摘要： A giant magnetoresistive stack (10) for use in a magnetic read head includes a NiFeCr seed layer (12), a ferromagnetic free layer (14), a nonmagnetic spacer layer (16), a ferromagnetic pinned layer (18), and a CrMnPt pinning layer (20). The ferromagnetic free layer (14) has a rotatable magnetic moment and is positioned adjacent to the NiFeCr seed layer (12). The ferromagnetic pinned layer (18) has a fixed magnetic moment and is positioned adjacent to the CrMnPt pinning layer (20). The nonmagnetic spacer layer (16) is positioned between the free layer (14) and the pinned layer (18). The combination of layers with their respective atomic percentage compositions and thicknesses results in a GMR ratio of at least 12%.
摘要翻译：用于磁读头的巨磁阻堆叠（10）包括NiFeCr晶种层（12），铁磁自由层（14），非磁性间隔层（16），铁磁性钉扎层（18）和CrMnPt 钉扎层（20）。铁磁自由层（14）具有可旋转的磁矩并且被定位成与NiFeCr晶种层（12）相邻。铁磁钉扎层（18）具有固定的磁矩并且邻近CrMnPt钉扎层（20）定位。非磁性间隔层（16）位于自由层（14）和被钉扎层（18）之间。层与其各自的原子百分比组成和厚度的组合导致GMR比至少为12％。

2. 发明授权

US07724469B2 High frequency field assisted write device 有权
标题翻译：高频场辅助写装置
公开(公告)号：US07724469B2
公开(公告)日：2010-05-25
申请号：US11634767
申请日：2006-12-06
申请人： Kaizhong Gao , Haiwen Xi , Yiming Shi , Sining Mao , Patrick J. Ryan , Song S. Xue , Shaoping Li
发明人： Kaizhong Gao , Haiwen Xi , Yiming Shi , Sining Mao , Patrick J. Ryan , Song S. Xue , Shaoping Li
IPC分类号： G11B5/127 , G11B5/187
CPC分类号： G11B5/1278 , G11B2005/001
摘要： A magnetic writer includes a write element and an oscillation device disposed adjacent to the write element. The first oscillation device includes a first magnetic layer, a second magnetic layer having a magnetization vector including a component perpendicular to a major plane of the first magnetic layer. The first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer. The first oscillation device generates a high-frequency oscillation field when a current is directed perpendicular to the major plane of the first magnetic layer.
摘要翻译：磁性写入器包括写入元件和邻近写入元件设置的振荡器件。第一振荡装置包括第一磁性层，具有包括垂直于第一磁性层的主平面的分量的磁化矢量的第二磁性层。设置在第一磁性层和第二磁性层之间的第一非磁性层。当电流垂直于第一磁性层的主平面时，第一振荡装置产生高频振荡场。

3. 发明授权

US07589928B2 Magnetic recording device including a thermal proximity sensor 有权
标题翻译：包括热接近传感器的磁记录装置
公开(公告)号：US07589928B2
公开(公告)日：2009-09-15
申请号：US11724739
申请日：2007-03-16
申请人： Mallika Roy , Kaizhong Gao , Insik Jin , William Bruce Fitzpatrick , Housan S. Dakroub , Sining Mao , Song S. Xue , Jeffrey Howard Lake , Dadi Setiadi
发明人： Mallika Roy , Kaizhong Gao , Insik Jin , William Bruce Fitzpatrick , Housan S. Dakroub , Sining Mao , Song S. Xue , Jeffrey Howard Lake , Dadi Setiadi
IPC分类号： G11B21/02
CPC分类号： G11B5/1278 , G11B5/3133 , G11B5/314 , G11B5/40 , G11B5/6064 , G11B5/607
摘要： A system includes a magnetic device for writing to and reading from a magnetic medium and a sensor disposed adjacent to the magnetic device and proximate to the magnetic medium. The sensor generates signals related to thermal variations in the sensor caused by changes in a distance between the magnetic device and the magnetic medium.
摘要翻译：一种系统包括用于写入和读取磁性介质的磁性装置和邻近磁性装置设置并靠近磁性介质的传感器。该传感器产生与由磁性装置和磁性介质之间的距离变化引起的传感器热变化相关的信号。

4. 发明申请

US20080225426A1 Magnetic recording device including a thermal proximity sensor 有权
标题翻译：包括热接近传感器的磁记录装置
公开(公告)号：US20080225426A1
公开(公告)日：2008-09-18
申请号：US11724739
申请日：2007-03-16
申请人： Mallika Roy , Kaizhong Gao , Insik Jin , William Bruce Fitzpatrick , Housan S. Dakroub , Sining Mao , Song S. Xue , Jeffrey Howard Lake , Dadi Setiadi
发明人： Mallika Roy , Kaizhong Gao , Insik Jin , William Bruce Fitzpatrick , Housan S. Dakroub , Sining Mao , Song S. Xue , Jeffrey Howard Lake , Dadi Setiadi
IPC分类号： G11B27/36 , G11B21/04
CPC分类号： G11B5/1278 , G11B5/3133 , G11B5/314 , G11B5/40 , G11B5/6064 , G11B5/607
摘要： A system includes a magnetic device for writing to and reading from a magnetic medium and a sensor disposed adjacent to the magnetic device and proximate to the magnetic medium. The sensor generates signals related to thermal variations in the sensor caused by changes in a distance between the magnetic device and the magnetic medium.
摘要翻译：一种系统包括用于写入和读取磁性介质的磁性装置和邻近磁性装置设置并靠近磁性介质的传感器。该传感器产生与由磁性装置和磁性介质之间的距离变化引起的传感器热变化相关的信号。

5. 发明授权

US07151654B1 TMR head structure with conductive shunt 有权
标题翻译： TMR头结构具有导通分流
公开(公告)号：US07151654B1
公开(公告)日：2006-12-19
申请号：US10300412
申请日：2002-11-19
申请人： Sining Mao , Janusz Josef Nowak , Eric Shane Linville , Horng-Shiong Shawn Chen , Song S. Xue
发明人： Sining Mao , Janusz Josef Nowak , Eric Shane Linville , Horng-Shiong Shawn Chen , Song S. Xue
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , G11B5/3922 , G11B5/3932 , G11B2005/0016
摘要： The sensor of the present invention is a tunneling magnetoresistive read sensor that includes first and second electrodes, and a stack positioned between the electrodes. The stack includes at least one sense layer and a tunnel barrier. A shunt member is operatively coupled to the electrodes in parallel with the stack. The shunt member diverts current flowing from the first electrode to the second electrode when the sensor is operational so that current simultaneously flows through the stack and the shunt member to reduce the effective resistance of the sensor.
摘要翻译：本发明的传感器是隧道磁阻读取传感器，其包括第一和第二电极以及位于电极之间的堆叠。堆叠包括至少一个感测层和隧道屏障。分流构件与堆叠体平行地可操作地耦合到电极。当传感器可操作时，分流构件转移从第一电极流到第二电极的电流，使得电流同时流过堆叠和分流构件，以降低传感器的有效电阻。

6. 发明申请

US20080225584A1 Magnetic storage element responsive to spin polarized current 有权
标题翻译：响应于自旋极化电流的磁存储元件
公开(公告)号：US20080225584A1
公开(公告)日：2008-09-18
申请号：US11724740
申请日：2007-03-16
申请人： Kaizhong Gao , Haiwen Xi , Yiming Shi , Song S. Xue , Sining Mao
发明人： Kaizhong Gao , Haiwen Xi , Yiming Shi , Song S. Xue , Sining Mao
IPC分类号： G11C11/15
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673
摘要： The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.
摘要翻译：本发明涉及包括具有第一磁化方向的第一磁化的第一参考层和具有基本上垂直于第一磁化方向的第二磁化方向的第二磁化的第二参考层的存储单元。存储层设置在第一参考层和第二参考层之间，并且当存储单元处于第一数据状态时，具有从第一磁化方向大约45°的第三磁化方向和从第二磁化方向开始的大约135°的存储层，当存储单元处于第二数据状态时与第三磁化方向相反的第四磁化方向。

7. 发明申请

US20080137224A1 High frequency field assisted write device 有权
标题翻译：高频场辅助写装置
公开(公告)号：US20080137224A1
公开(公告)日：2008-06-12
申请号：US11634767
申请日：2006-12-06
申请人： Kaizhong Gao , Haiwen Xi , Yiming Shi , Sining Mao , Patrick J. Ryan , Song S. Xue , Shaoping Li
发明人： Kaizhong Gao , Haiwen Xi , Yiming Shi , Sining Mao , Patrick J. Ryan , Song S. Xue , Shaoping Li
IPC分类号： G11B5/02
CPC分类号： G11B5/1278 , G11B2005/001
摘要： A magnetic writer includes a write element and an oscillation device disposed adjacent to the write element. The first oscillation device includes a first magnetic layer, a second magnetic layer having a magnetization vector including a component perpendicular to a major plane of the first magnetic layer. The first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer. The first oscillation device generates a high-frequency oscillation field when a current is directed perpendicular to the major plane of the first magnetic layer.
摘要翻译：磁性写入器包括写入元件和邻近写入元件设置的振荡器件。第一振荡装置包括第一磁性层，具有包括垂直于第一磁性层的主平面的分量的磁化矢量的第二磁性层。设置在第一磁性层和第二磁性层之间的第一非磁性层。当电流垂直于第一磁性层的主平面时，第一振荡装置产生高频振荡场。

8. 发明授权

US07177122B2 Biasing for tri-layer magnetoresistive sensors 有权
标题翻译：三层磁阻传感器的偏置
公开(公告)号：US07177122B2
公开(公告)日：2007-02-13
申请号：US10694483
申请日：2003-10-27
申请人： Chunhong Hou , Sining Mao , Eric S. Linville , Olle Heinonen , Xuefei Tang , Qing He , Eric W. Singleton , Song S. Xue
发明人： Chunhong Hou , Sining Mao , Eric S. Linville , Olle Heinonen , Xuefei Tang , Qing He , Eric W. Singleton , Song S. Xue
IPC分类号： G11B5/33
CPC分类号： G11B5/3932 , G11B5/3909 , G11B2005/0018 , G11B2005/3996
摘要： A biasing system for a tri-layer reader stack magnetoresistive sensor is disclosed. The tri-layer reader stack includes a first ferromagnetic free layer, a second ferromagnetic free layer, and a magnetoresistive layer between the first and second ferromagnetic free layers. The free layers are positioned in the tri-layer reader stack such that quiescent state magnetizations of the free layers are antiparallel. A biasing layer is positioned with regard to the tri-layer reader stack, typically separated from the tri-layer reader stack by a nonmagnetic spacer layer. A biasing means is positioned such that a magnetization of the biasing layer is perpendicular to the quiescent state magnetizations of the free layers. This biasing results in the free layers having biased magnetizations directed substantially orthogonal with respect to each other.
摘要翻译：公开了一种用于三层读取器堆叠磁阻传感器的偏置系统。三层读取器堆叠包括第一铁磁自由层，第二铁磁自由层和在第一和第二铁磁性自由层之间的磁阻层。自由层位于三层读取器堆叠中，使得自由层的静态状态磁化反平行。偏置层相对于三层读取器堆叠定位，通常通过非磁性间隔层与三层读取器堆叠分离。偏置装置被定位成使得偏置层的磁化垂直于自由层的静态状态磁化。该偏置导致自由层具有相对于彼此基本上正交的偏磁化。

9. 发明授权

US08243503B2 Magnetic storage element responsive to spin polarized current 有权
标题翻译：响应于自旋极化电流的磁存储元件
公开(公告)号：US08243503B2
公开(公告)日：2012-08-14
申请号：US12958106
申请日：2010-12-01
申请人： Kaizhong Gao , Haiwen Xi , Yiming Shi , Song S. Xue , Sining Mao
发明人： Kaizhong Gao , Haiwen Xi , Yiming Shi , Song S. Xue , Sining Mao
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673
摘要： The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.
摘要翻译：本发明涉及包括具有第一磁化方向的第一磁化的第一参考层和具有基本上垂直于第一磁化方向的第二磁化方向的第二磁化的第二参考层的存储单元。存储层设置在第一参考层和第二参考层之间，并且当存储单元处于第一数据状态时，具有从第一磁化方向大约45°的第三磁化方向和从第二磁化方向开始的大约135°的存储层，当存储单元处于第二数据状态时与第三磁化方向相反的第四磁化方向。

10. 发明申请

US20110069537A1 Magnetic Storage Element Responsive to Spin Polarized Current 有权
标题翻译：响应于旋转极化电流的磁存储元件
公开(公告)号：US20110069537A1
公开(公告)日：2011-03-24
申请号：US12958106
申请日：2010-12-01
申请人： Kaizhong Gao , Haiwen Xi , Yiming Shi , Song S. Xue , Sining Mao
发明人： Kaizhong Gao , Haiwen Xi , Yiming Shi , Song S. Xue , Sining Mao
IPC分类号： G11C11/16 , G11C11/15
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673
摘要： The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.
摘要翻译：本发明涉及包括具有第一磁化方向的第一磁化的第一参考层和具有基本上垂直于第一磁化方向的第二磁化方向的第二磁化的第二参考层的存储单元。存储层设置在第一参考层和第二参考层之间，并且当存储单元处于第一数据状态时，具有从第一磁化方向大约45°的第三磁化方向和从第二磁化方向开始的大约135°的存储层，当存储单元处于第二数据状态时与第三磁化方向相反的第四磁化方向。

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