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1. 发明申请

US20070033782A1 Electrode sandwich separation 审中-公开
标题翻译：电极三明治分离
公开(公告)号：US20070033782A1
公开(公告)日：2007-02-15
申请号：US11585646
申请日：2006-10-23
申请人： Zaza Taliashvili , Avto Tavkhelidze , Rochel Geller , Isaiah Cox , Leri Tsakadze
发明人： Zaza Taliashvili , Avto Tavkhelidze , Rochel Geller , Isaiah Cox , Leri Tsakadze
IPC分类号： H01L21/00
CPC分类号： H01J9/02 , H01J21/08 , H01L37/00 , Y10T29/49117 , Y10T29/49128 , Y10T29/49144 , Y10T29/49147 , Y10T29/49156
摘要： Materials bonded together are separated using electrical current, thermal stresses, mechanical force, any combination of the above methods, or any other application or removal of energy until the bonds disappear and the materials are separated. In one embodiment the original bonding was composed of two layers of material. In another embodiment, the sandwich was composed of three layers. In a further embodiment, the parts of the sandwich are firmly maintained in their respective positions during the application of current so as to be able to subsequently align the materials relative to one another.
摘要翻译：使用电流，热应力，机械力，上述方法的任何组合或任何其它应用或能量的去除分离粘合在一起的材料，直到键消失并且材料分离。在一个实施方案中，原始粘合由两层材料组成。在另一个实施方案中，三明治由三层组成。在另一实施例中，夹层的部分在施加电流期间被牢固地保持在它们各自的位置，以便能够随后使材料相对于彼此对齐。

2. 发明授权

US07140102B2 Electrode sandwich separation 失效
公开(公告)号：US07140102B2
公开(公告)日：2006-11-28
申请号：US10234498
申请日：2002-09-03
申请人： Zaza Taliashvili , Avto Tavkhelidze , Rochel Geller , Isaiah Watas Cox , Leri Tsakadze
发明人： Zaza Taliashvili , Avto Tavkhelidze , Rochel Geller , Isaiah Watas Cox , Leri Tsakadze
IPC分类号： H01R9/00
CPC分类号： H01J9/02 , H01J21/08 , H01L37/00 , Y10T29/413 , Y10T29/49117 , Y10T29/49128 , Y10T29/49144 , Y10T29/49147 , Y10T29/49156
摘要： Materials bonded together are separated using electrical current, thermal stresses, mechanical force, any combination of the above methods, or any other application or removal of energy until the bonds disappear and the materials are separated. In one embodiment the original bonding was composed of two layers of material. In another embodiment, the sandwich was composed of three layers. In a further embodiment, the parts of the sandwich are firmly maintained in their respective positions during the application of current so as to be able to subsequently align the materials relative to one another.

3. 发明申请

US20080061286A1 Liquid metal contact as possible element for thermotunneling 失效
标题翻译：液态金属接触作为热电偶的可能元件
公开(公告)号：US20080061286A1
公开(公告)日：2008-03-13
申请号：US11982286
申请日：2007-10-31
申请人： Avto Tavkhelidze , Leri Tsakadze , Zaza Taliashvili , Larissa Jangidze , Rodney Cox
发明人： Avto Tavkhelidze , Leri Tsakadze , Zaza Taliashvili , Larissa Jangidze , Rodney Cox
IPC分类号： H01L29/08 , H01L29/00
CPC分类号： H01L29/456 , H01L29/43
摘要： The use of liquid metal contacts for devices based on thermotunneling has been investigated. Electric and thermal characteristics of low wetting contact Hg/Si, and high wetting contacts Hg/Cu were determined and compared. Tunneling I-V characteristics for Hg/Si were obtained, whilst for Hg/Cu, I-V characteristics were ohmic. The tunneling I-V characteristic is explained by the presence of a nanogap between the contact materials. Heat conductance of high wetting and low wetting contacts were compared, using calorimeter measurements. Heat conductance of high wetting contact was 3-4 times more than of low wetting contact. Both electric and thermal characteristics of liquid metal contact indicated that it could be used for thermotunneling devices. To reduce the work function and make liquid metal more suitable for room temperature cooling, Cs was dissolved in liquid Hg. Work function as low as 2.6 eV was obtained.
摘要翻译：已经研究了使用液态金属触点作为基于热电穿孔的装置。确定并比较了低湿接触Hg / Si和高湿接触Hg / Cu的电热特性。获得了Hg / Si的隧道I-V特性，而对于Hg / Cu，I-V特性是欧姆的。隧道I-V特性由接触材料之间的纳米隙的存在来解释。使用量热仪测量比较了高润湿和低湿接触的导热性。高润湿接触的热传导是低湿接触的3-4倍。液态金属触点的电气和热特性均表明它可用于热电偶穿孔装置。为了降低功能，使液态金属更适合于室温冷却，Cs溶解在液态Hg中。工作功能低至2.6 eV。

4. 发明授权

US08575597B2 Liquid metal contact as possible element for thermotunneling 失效
标题翻译：液态金属接触作为热电偶的可能元件
公开(公告)号：US08575597B2
公开(公告)日：2013-11-05
申请号：US11982286
申请日：2007-10-31
申请人： Avto Tavkhelidze , Leri Tsakadze , Zaza Taliashvili , Larissa Jangidze , Rodney Thomas Cox
发明人： Avto Tavkhelidze , Leri Tsakadze , Zaza Taliashvili , Larissa Jangidze , Rodney Thomas Cox
IPC分类号： H01L29/08 , H01L29/00
CPC分类号： H01L29/456 , H01L29/43
摘要： The use of liquid metal contacts for devices based on thermotunneling has been investigated. Electric and thermal characteristics of low wetting contact Hg/Si, and high wetting contacts Hg/Cu were determined and compared. Tunneling I-V characteristics for Hg/Si were obtained, while for Hg/Cu, I-V characteristics were ohmic. The tunneling I-V characteristic is explained by the presence of a nanogap between the contact materials. Heat conductance of high wetting and low wetting contacts were compared, using calorimeter measurements. Heat conductance of high wetting contact was 3-4 times more than of low wetting contact. Both electric and thermal characteristics of liquid metal contact indicated that it could be used for thermotunneling devices. To reduce the work function and make liquid metal more suitable for room temperature cooling, Cs was dissolved in liquid Hg. Work function as low as 2.6 eV was obtained.
摘要翻译：已经研究了使用液态金属触点作为基于热电穿孔的装置。确定并比较了低湿接触Hg / Si和高湿接触Hg / Cu的电热特性。获得Hg / Si隧道I-V特性，而对于Hg / Cu，I-V特性为欧姆。隧道I-V特性由接触材料之间的纳米隙的存在来解释。使用量热仪测量比较了高润湿和低湿接触的导热性。高润湿接触的热传导是低湿接触的3-4倍。液态金属触点的电气和热特性均表明它可用于热电偶穿孔装置。为了降低功能，使液态金属更适合于室温冷却，Cs溶解在液态Hg中。工作功能低至2.6 eV。

5. 发明授权

US07323709B2 Method for increasing efficiency of thermotunnel devices 有权
标题翻译：提高热电偶装置效率的方法
公开(公告)号：US07323709B2
公开(公告)日：2008-01-29
申请号：US10534633
申请日：2003-11-27
申请人： Avto Tavkhelidze , Leri Tsakadze
发明人： Avto Tavkhelidze , Leri Tsakadze
IPC分类号： H01L29/06
CPC分类号： H01J45/00 , F25B21/00 , F25B2321/003 , H01J19/24 , H01J21/02 , Y02B30/66 , Y10S438/979
摘要： The present invention comprises a tunneling device in which the collector electrode is modified so that tunneling of higher energy electrons from the emitter electrode to the collector electrode is enhanced. In one embodiment, the collector electrode is contacted with an insulator layer, preferably aluminum oxide, disposed between the collector and emitter electrodes. The present invention additionally comprises a method for enhancing tunneling of higher energy electrons from an emitter electrode to a collector electrode, the method comprising the step of contacting the collector electrode with an insulator, preferably aluminum oxide, and placing the insulator between the collector electrode and the emitter electrode.
摘要翻译：本发明包括一种隧穿装置，其中集电极被修改，使得能量较高的电子从发射电极到集电极的隧道效应得到增强。在一个实施例中，集电极与设置在集电极和发射极之间的绝缘体层，优选氧化铝接触。本发明还包括一种用于增强高能电子从发射电极到集电极的隧穿的方法，所述方法包括使集电极与绝缘体（优选氧化铝）接触的步骤，并将绝缘体放置在集电极和发射电极。

6. 发明申请

US20050263752A1 Thermoelectric material with integrated de broglie wave filter 审中-公开
标题翻译：具有集成德布勒格滤波器的热电材料
公开(公告)号：US20050263752A1
公开(公告)日：2005-12-01
申请号：US10531367
申请日：2003-10-20
申请人： Avto Tavkhelidze , Leri Tsakadze
发明人： Avto Tavkhelidze , Leri Tsakadze
IPC分类号： H01L35/00 , H01L35/30 , H01L29/06 , H01L31/072
CPC分类号： H01L35/30 , H01L35/00
摘要： In this invention we offer a method which blocks movement of low energy electrons through the thermoelectric material. We achieve this using filter which is more transparent for high energy electrons than for low energy ones. Tunnel barrier on the way of the electrons is used as filter. Filter works on the basis of the wave properties of the electrons. The geometry of the tunnel barrier is such that barrier becomes transparent for electrons having certain de Broglie wavelength. If the geometry of the barrier is such that its transparency wavelength matches the wavelength of high energy electrons it will be transparent for high energy electrons and will be blocking low energy ones by means of tunnel barrier.
摘要翻译：在本发明中，我们提供一种阻止低能电子通过热电材料运动的方法。我们实现这个使用对高能电子更透明的过滤器，而不是低能量电子。电子路上的隧道屏障被用作过滤器。滤波器基于电子的波特性工作。隧道势垒的几何形状使得对于具有特定德布罗意波长的电子，屏障变得透明。如果屏障的几何形状使得其透明度波长与高能电子的波长匹配，则对于高能电子将是透明的，并且将通过隧道势垒阻挡低能量电子的低能量电子。

7. 发明授权

US06869855B1 Method for making electrode pairs 失效
标题翻译：电极对的制作方法
公开(公告)号：US06869855B1
公开(公告)日：2005-03-22
申请号：US10639908
申请日：2003-08-12
申请人： Avto Tavkhelidze , Leri Tsakadze , Givi Skhiladze , Isaiah Watas Cox
发明人： Avto Tavkhelidze , Leri Tsakadze , Givi Skhiladze , Isaiah Watas Cox
IPC分类号： H01L21/20 , H01L37/00
CPC分类号： H01L37/00 , Y10S438/979
摘要： The present invention is a method for introducing a low work function material into a pair of matched electrodes. The method involves fabricating a composite of two electrodes and a low work function material, and treating the composite so that it splits to give a pair of matched electrodes.
摘要翻译：本发明是一种将低功函数材料引入一对匹配电极的方法。该方法包括制备两个电极和低功函数材料的复合材料，并处理复合材料，使其分裂以产生一对匹配的电极。

8. 发明授权

US07208021B1 Fabrication of close-spaced MEMS devices by method of precise adhesion regulation 有权
标题翻译：通过精密粘附调节方法制造紧密隔离的MEMS器件
公开(公告)号：US07208021B1
公开(公告)日：2007-04-24
申请号：US11058308
申请日：2005-02-14
申请人： Lasha Vardosanidze , Zaza Taliashvili , Avto Tavkhelidze , Rodney Thomas Cox
发明人： Lasha Vardosanidze , Zaza Taliashvili , Avto Tavkhelidze , Rodney Thomas Cox
IPC分类号： H01L21/00
CPC分类号： H01L21/187 , B81C1/0038 , B81C1/00484 , B81C2201/0191 , B81C2201/0192 , Y10T29/413 , Y10T29/49128 , Y10T29/49147
摘要： In one aspect, the present invention provides a method for fabricating two layers separated by a gap comprising the steps of: (a) providing a first material; (b) treating the first material to reduce the number of available bonding centers; (c) placing a second material over the first material and allowing bonds to form between the two materials to form a composite; and (d) separating the composite so formed along the boundary of the two materials. In a further aspect, subsequent layers of material may be introduced to the composite by repeating steps (b) and (c) under conditions where adhesion between the subsequent layers is greater, smaller or substantially the same as the adhesion between the first and second material.
摘要翻译：一方面，本发明提供一种用于制造由间隙分开的两层的方法，包括以下步骤：（a）提供第一材料; （b）处理第一材料以减少可用结合中心的数量; （c）将第二材料放置在第一材料上并允许在两种材料之间形成粘结以形成复合材料; 和（d）沿着两种材料的边界分离形成的复合材料。在另一方面，随后的材料层可以在条件下通过重复步骤（b）和（c）而被引入到复合材料中，其中后续层之间的粘合力比第一和第二材料之间的粘合力更大，或更小或基本相同。

9. 发明授权

US07253549B2 Thermionic vacuum diode device with adjustable electrodes 失效
标题翻译：具有可调电极的热电偶真空二极管器件
公开(公告)号：US07253549B2
公开(公告)日：2007-08-07
申请号：US11598919
申请日：2006-11-13
申请人： Avto Tavkhelidze , Zaza Taliashvili
发明人： Avto Tavkhelidze , Zaza Taliashvili
IPC分类号： H02N3/00 , H02N2/00
CPC分类号： H01L23/04 , H01J45/00 , H01L23/051 , H01L2924/0002 , H01L2924/00
摘要： In accordance with one embodiment of the present invention, a Gap Diode is disclosed in which a tubular actuating element serves as both a housing for a pair of electrodes and as a means for controlling the separation between the electrode pair. In a preferred embodiment, the tubular actuating element is a quartz piezo-electric tube. In accordance with another embodiment of the present invention, a Gap Diode is disclosed which is fabricated by micromachining techniques in which the separation of the electrodes is controlled by piezo-electric, electrostrictive or magnetostrictive actuators. Preferred embodiments of Gap Diodes include Cool Chips, Power Chips, and photoelectric converters.
摘要翻译：根据本发明的一个实施例，公开了间隙二极管，其中管状致动元件用作一对电极的壳体和用作控制电极对之间的间隔的装置。在优选实施例中，管状致动元件是石英压电管。根据本发明的另一实施例，公开了间隙二极管，其通过微加工技术制造，其中电极的分离由压电，电致伸缩或磁致伸缩致动器控制。间隙二极管的优选实施例包括酷芯片，功率芯片和光电转换器。

10. 发明申请

US20070056623A1 Thermionic vacuum diode device with adjustable electrodes 失效
公开(公告)号：US20070056623A1
公开(公告)日：2007-03-15
申请号：US11598919
申请日：2006-11-13
申请人： Avto Tavkhelidze , Zaza Taliashvili
发明人： Avto Tavkhelidze , Zaza Taliashvili
IPC分类号： H01L35/30 , H02N6/00
CPC分类号： H01L23/04 , H01J45/00 , H01L23/051 , H01L2924/0002 , H01L2924/00
摘要： In accordance with one embodiment of the present invention, a Gap Diode is disclosed in which a tubular actuating element serves as both a housing for a pair of electrodes and as a means for controlling the separation between the electrode pair. In a preferred embodiment, the tubular actuating element is a quartz piezo-electric tube. In accordance with another embodiment of the present invention, a Gap Diode is disclosed which is fabricated by micromachining techniques in which the separation of the electrodes is controlled by piezo-electric, electrostrictive or magnetostrictive actuators. Preferred embodiments of Gap Diodes include Cool Chips, Power Chips, and photoelectric converters.

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