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1. 发明授权

US08426970B2 Substrate processing including a masking layer 有权
公开(公告)号：US08426970B2
公开(公告)日：2013-04-23
申请号：US12979627
申请日：2010-12-28
申请人： Zachary Fresco , Chi-I Lang , Sandra G. Malhotra , Tony P. Chiang , Thomas R. Boussie , Nitin Kumar , Jinhong Tong , Anh Duong
发明人： Zachary Fresco , Chi-I Lang , Sandra G. Malhotra , Tony P. Chiang , Thomas R. Boussie , Nitin Kumar , Jinhong Tong , Anh Duong
IPC分类号： H01L23/52 , H01L23/532
CPC分类号： H01L21/288 , B82Y30/00 , H01L21/3105 , H01L21/31058 , H01L21/76834 , H01L21/76849 , H01L21/7685
摘要： Methods for substrate processing are described. The methods include forming a material layer on a substrate. The methods include selecting constituents of a molecular masking layer (MML) to remove an effect of variations in the material layer as a result of substrate processing. The methods include normalizing the surface characteristics of the material layer by selectively depositing the MML on the material layer.

2. 发明授权

US07879710B2 Substrate processing including a masking layer 有权
标题翻译：衬底处理包括掩模层
公开(公告)号：US07879710B2
公开(公告)日：2011-02-01
申请号：US11647882
申请日：2006-12-29
申请人： Zachary Fresco , Chi-I Lang , Sandra G. Malhotra , Tony P. Chiang , Thomas R. Boussie , Nitin Kumar , Jinhong Tong , Anh Duong
发明人： Zachary Fresco , Chi-I Lang , Sandra G. Malhotra , Tony P. Chiang , Thomas R. Boussie , Nitin Kumar , Jinhong Tong , Anh Duong
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , B82Y30/00 , H01L21/3105 , H01L21/31058 , H01L21/76834 , H01L21/76849 , H01L21/7685
摘要： Methods for substrate processing are described. The methods include forming a material layer on a substrate. The methods include selecting constituents of a molecular masking layer (MML) to remove an effect of variations in the material layer as a result of substrate processing. The methods include normalizing the surface characteristics of the material layer by selectively depositing the MML on the material layer.
摘要翻译：描述基板处理方法。所述方法包括在基底上形成材料层。所述方法包括选择分子屏蔽层（MML）的成分以消除作为衬底处理的结果的材料层中的变化的影响。所述方法包括通过在材料层上选择性地沉积MML来使材料层的表面特性归一化。

3. 发明申请

US20120001320A1 SUBSTRATE PROCESSING INCLUDING A MASKING LAYER 有权
标题翻译：基板处理包括掩蔽层
公开(公告)号：US20120001320A1
公开(公告)日：2012-01-05
申请号：US12979627
申请日：2010-12-28
申请人： Zachary Fresco , Chi-I Lang , Sandra G. Malhotra , Tony P. Chiang , Thomas R. Boussie , Nitin Kumar , Jinhong Tong , Anh Duong
发明人： Zachary Fresco , Chi-I Lang , Sandra G. Malhotra , Tony P. Chiang , Thomas R. Boussie , Nitin Kumar , Jinhong Tong , Anh Duong
IPC分类号： H01L23/48
CPC分类号： H01L21/288 , B82Y30/00 , H01L21/3105 , H01L21/31058 , H01L21/76834 , H01L21/76849 , H01L21/7685
摘要： Methods for substrate processing are described. The methods include forming a material layer on a substrate. The methods include selecting constituents of a molecular masking layer (MML) to remove an effect of variations in the material layer as a result of substrate processing. The methods include normalizing the surface characteristics of the material layer by selectively depositing the MML on the material layer.
摘要翻译：描述基板处理方法。所述方法包括在基底上形成材料层。所述方法包括选择分子屏蔽层（MML）的成分以消除作为衬底处理的结果的材料层中的变化的影响。所述方法包括通过在材料层上选择性地沉积MML来使材料层的表面特性归一化。

4. 发明申请

US20080246150A1 FORMATION OF A MASKING LAYER ON A DIELECTRIC REGION TO FACILITATE FORMATION OF A CAPPING LAYER ON ELECTRICALLY CONDUCTIVE REGIONS SEPARATED BY THE DIELECTRIC REGION 有权
标题翻译：在电介质区域形成电介质层上的掩蔽层以形成电介质区分开的导电区域上的覆盖层
公开(公告)号：US20080246150A1
公开(公告)日：2008-10-09
申请号：US12124113
申请日：2008-05-20
申请人： David E. Lazovsky , Sandra G. Malhotra , Thomas R. Boussie
发明人： David E. Lazovsky , Sandra G. Malhotra , Thomas R. Boussie
IPC分类号： H01L23/538
CPC分类号： H01L21/7685 , B82Y30/00 , H01L21/02118 , H01L21/02167 , H01L21/0217 , H01L21/02203 , H01L21/288 , H01L21/31 , H01L21/76834
摘要： Devices are presented including: a substrate including a dielectric region and a conductive region; a molecular self-assembled layer selectively formed on the dielectric region; and a capping layer formed on the conductive region, where the capping layer is an electrically conductive material such as: an alloy of cobalt and boron material, an alloy of cobalt, tungsten, and phosphorous material, an alloy of nickel, molybdenum, and phosphorous. In some embodiments, devices are presented where the molecular self-assembled layer includes one or more of a polyelectrolyte, a dendrimer, a hyper-branched polymer, a polymer brush, a block co-polymer, and a silane-based material where the silane-based material includes one or more hydrolysable substituents of a general formula RnSiX4-n, where R is: an alkyl, a substituted alkyl, a fluoroalkyl, an aryl, a substituted aryl, and a fluoroaryl, and where X is: a halo, an alkoxy, an aryloxy, an amino, an octadecyltrichlorosilane, and an aminopropyltrimethoxysilane.
摘要翻译：本发明提供了包括：包括电介质区域和导电区域的衬底; 选择性地形成在电介质区域上的分子自组装层; 以及形成在导电区域上的覆盖层，其中覆盖层是导电材料，例如钴和硼材料的合金，钴，钨和磷材料的合金，镍，钼和磷的合金。在一些实施方案中，存在装置，其中分子自组装层包括聚电解质，树枝状聚合物，超支化聚合物，聚合物刷，嵌段共聚物和硅烷基材料中的一种或多种，其中硅烷基材料包括一个或多个通式为R x Si x 4-n N的可水解取代基，其中R是：烷基，取代的烷基，氟代烷基，芳基取代的芳基和氟代芳基，其中X为：卤素，烷氧基，芳氧基，氨基，十八烷基三氯硅烷和氨基丙基三甲氧基硅烷。

5. 发明授权

US07390739B2 Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region 有权
标题翻译：在电介质区域上形成掩模层，以便在由电介质区域分隔的导电区域上形成覆盖层
公开(公告)号：US07390739B2
公开(公告)日：2008-06-24
申请号：US11132817
申请日：2005-05-18
申请人： David E. Lazovsky , Sandra G. Malhotra , Thomas R. Boussie
发明人： David E. Lazovsky , Sandra G. Malhotra , Thomas R. Boussie
IPC分类号： H01L21/44
CPC分类号： H01L21/7685 , B82Y30/00 , H01L21/02118 , H01L21/02167 , H01L21/0217 , H01L21/02203 , H01L21/288 , H01L21/31 , H01L21/76834
摘要： A masking layer is formed on a dielectric region of an electronic device so that, during subsequent formation of a capping layer on electrically conductive regions of the electronic device that are separated by the dielectric region, the masking layer inhibits formation of capping layer material on or in the dielectric region. The capping layer can be formed selectively on the electrically conductive regions or non-selectively; in either case (particularly in the latter), capping layer material formed over the dielectric region can subsequently be removed, thus ensuring that capping layer material is formed only on the electrically conductive regions. Silane-based materials, such as silane-based SAMs, can be used to form the masking layer. The capping layer can be formed of an electrically conductive material (e.g., a cobalt alloy, a nickel alloy, tungsten, tantalum, tantalum nitride), a semiconductor material, or an electrically insulative material, and can be formed using any appropriate process, including conventional deposition processes such as electroless deposition, chemical vapor deposition, physical vapor deposition or atomic layer deposition.
摘要翻译：在电子器件的电介质区域上形成掩模层，使得在随后在由电介质区域分离的电子器件的导电区域上形成覆盖层时，掩模层阻止在其上形成覆盖层材料在电介质区域。可以选择性地在导电区域或非选择性地形成覆盖层; 在任一情况下（特别是在后者中），可以随后去除在电介质区域上形成的覆盖层材料，从而确保覆盖层材料仅在导电区域上形成。可以使用诸如硅烷基SAM之类的硅烷基材料来形成掩模层。覆盖层可以由导电材料（例如，钴合金，镍合金，钨，钽，氮化钽），半导体材料或电绝缘材料形成，并且可以使用任何适当的工艺形成，包括常规沉积工艺如无电沉积，化学气相沉积，物理气相沉积或原子层沉积。

6. 发明授权

US08193090B2 Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region 有权
标题翻译：在电介质区域上形成掩模层，以便在由电介质区域分隔的导电区域上形成覆盖层
公开(公告)号：US08193090B2
公开(公告)日：2012-06-05
申请号：US13192777
申请日：2011-07-28
申请人： David E. Lazovsky , Sandra G. Malhotra , Thomas R. Boussie
发明人： David E. Lazovsky , Sandra G. Malhotra , Thomas R. Boussie
IPC分类号： H01L21/44
CPC分类号： H01L21/7685 , B82Y30/00 , H01L21/02118 , H01L21/02167 , H01L21/0217 , H01L21/02203 , H01L21/288 , H01L21/31 , H01L21/76834
摘要： A masking layer is formed on a dielectric region of an electronic device so that, during subsequent formation of a capping layer on electrically conductive regions of the electronic device that are separated by the dielectric region, the masking layer inhibits formation of capping layer material on or in the dielectric region. The capping layer can be formed selectively on the electrically conductive regions or non-selectively; in either case (particularly in the latter), capping layer material formed over the dielectric region can subsequently be removed, thus ensuring that capping layer material is formed only on the electrically conductive regions. Silane-based materials, such as silane-based SAMs, can be used to form the masking layer. The capping layer can be formed of an electrically conductive material (e.g., a cobalt alloy, a nickel alloy, tungsten, tantalum, tantalum nitride), a semiconductor material, or an electrically insulative material, and can be formed using any appropriate process, including conventional deposition processes such as electroless deposition, chemical vapor deposition, physical vapor deposition or atomic layer deposition.
摘要翻译：在电子器件的电介质区域上形成掩模层，使得在随后在由电介质区域分离的电子器件的导电区域上形成覆盖层时，掩模层阻止在其上形成覆盖层材料在电介质区域。可以选择性地在导电区域或非选择性地形成覆盖层; 在任一情况下（特别是在后者中），可以随后去除在电介质区域上形成的覆盖层材料，从而确保覆盖层材料仅在导电区域上形成。可以使用诸如硅烷基SAM之类的硅烷基材料来形成掩模层。覆盖层可以由导电材料（例如，钴合金，镍合金，钨，钽，氮化钽），半导体材料或电绝缘材料形成，并且可以使用任何适当的工艺形成，包括常规沉积工艺如无电沉积，化学气相沉积，物理气相沉积或原子层沉积。

7. 发明授权

US08461044B2 Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region 有权
公开(公告)号：US08461044B2
公开(公告)日：2013-06-11
申请号：US13458754
申请日：2012-04-27
申请人： David E. Lazovsky , Sandra G. Malhotra , Thomas R. Boussie
发明人： David E. Lazovsky , Sandra G. Malhotra , Thomas R. Boussie
IPC分类号： H01L21/44
CPC分类号： H01L21/7685 , B82Y30/00 , H01L21/02118 , H01L21/02167 , H01L21/0217 , H01L21/02203 , H01L21/288 , H01L21/31 , H01L21/76834
摘要： A masking layer is formed on a dielectric region of an electronic device so that, during subsequent formation of a capping layer on electrically conductive regions of the electronic device that are separated by the dielectric region, the masking layer inhibits formation of capping layer material on or in the dielectric region. The capping layer can be formed selectively on the electrically conductive regions or non-selectively; in either case, capping layer material formed over the dielectric region can subsequently be removed, thus ensuring that capping layer material is formed only on the electrically conductive regions. Silane-based materials, can be used to form the masking layer. The capping layer can be formed of an conductive material, a semiconductor material, or an insulative material, and can be formed using any appropriate process, including conventional deposition processes such as electroless deposition, chemical vapor deposition, physical vapor deposition or atomic layer deposition.

8. 发明授权

US08343866B2 Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region 有权
标题翻译：在电介质区域上形成掩模层，以便在由电介质区域分隔的导电区域上形成覆盖层
公开(公告)号：US08343866B2
公开(公告)日：2013-01-01
申请号：US13251952
申请日：2011-10-03
申请人： David E. Lazovsky , Sandra G. Malhotra , Thomas R. Boussie
发明人： David E. Lazovsky , Sandra G. Malhotra , Thomas R. Boussie
IPC分类号： H01L21/44
CPC分类号： H01L21/76829 , B82Y30/00 , H01L21/02183 , H01L21/3148 , H01L21/31633 , H01L21/31695 , H01L21/3185 , H01L21/76826 , H01L21/76849
摘要： A masking layer is formed on a dielectric region of an electronic device so that, during subsequent formation of a capping layer on electrically conductive regions the masking layer inhibits formation of capping layer material on the dielectric region. The capping layer can be formed selectively on the electrically conductive regions or non-selectively; in either case, capping layer material formed over the dielectric region can subsequently be removed, thus ensuring that capping layer material is formed only on the electrically conductive regions. Silane-based materials, such as silane-based SAMs, can be used to form the masking layer. The capping layer can be formed of an electrically conductive, a semiconductor material, or an electrically insulative material, and can be formed using any appropriate process, including conventional deposition processes such as electroless deposition, chemical vapor deposition, physical vapor deposition or atomic layer deposition.
摘要翻译：在电子器件的电介质区域上形成掩模层，使得在导电区域之后形成覆盖层时，掩模层阻止在电介质区域上形成覆盖层材料。可以选择性地在导电区域或非选择性地形成覆盖层; 在任一种情况下，形成在电介质区域上的覆盖层材料随后可以被去除，从而确保覆盖层材料仅在导电区域上形成。可以使用诸如硅烷基SAM之类的硅烷基材料来形成掩模层。覆盖层可以由导电，半导体材料或电绝缘材料形成，并且可以使用任何适当的工艺形成，包括常规沉积工艺，例如无电沉积，化学气相沉积，物理气相沉积或原子层沉积。

9. 发明授权

US07749881B2 Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region 有权
标题翻译：在电介质区域上形成掩模层，以便在由电介质区域分隔的导电区域上形成覆盖层
公开(公告)号：US07749881B2
公开(公告)日：2010-07-06
申请号：US11132841
申请日：2005-05-18
申请人： David E. Lazovsky , Sandra G. Malhotra , Thomas R. Boussie
发明人： David E. Lazovsky , Sandra G. Malhotra , Thomas R. Boussie
IPC分类号： H01L21/44
CPC分类号： H01L21/76829 , B82Y30/00 , H01L21/02183 , H01L21/3148 , H01L21/31633 , H01L21/31695 , H01L21/3185 , H01L21/76826 , H01L21/76849
摘要： A masking layer is formed on a dielectric region of an electronic device so that, during subsequent formation of a capping layer on electrically conductive regions of the electronic device that are separated by the dielectric region, the masking layer inhibits formation of capping layer material on or in the dielectric region. The capping layer can be formed selectively on the electrically conductive regions or non-selectively; in either case (particularly in the latter), capping layer material formed over the dielectric region can subsequently be removed, thus ensuring that capping layer material is formed only on the electrically conductive regions. Silane-based materials, such as silane-based SAMs, can be used to form the masking layer. The capping layer can be formed of an electrically conductive material (e.g., a cobalt alloy, a nickel alloy, tungsten, tantalum, tantalum nitride), a semiconductor material, or an electrically insulative material, and can be formed using any appropriate process, including conventional deposition processes such as electroless deposition, chemical vapor deposition, physical vapor deposition or atomic layer deposition.
摘要翻译：在电子器件的电介质区域上形成掩模层，使得在随后在由电介质区域分离的电子器件的导电区域上形成覆盖层时，掩模层阻止在其上形成覆盖层材料在电介质区域。可以选择性地在导电区域或非选择性地形成覆盖层; 在任一情况下（特别是在后者中），可以随后去除在电介质区域上形成的覆盖层材料，从而确保覆盖层材料仅在导电区域上形成。可以使用诸如硅烷基SAM之类的硅烷基材料来形成掩模层。覆盖层可以由导电材料（例如，钴合金，镍合金，钨，钽，氮化钽），半导体材料或电绝缘材料形成，并且可以使用任何适当的工艺形成，包括常规沉积工艺如无电沉积，化学气相沉积，物理气相沉积或原子层沉积。

10. 发明授权

US08030772B2 Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region 有权
标题翻译：在电介质区域上形成掩模层，以便在由电介质区域分隔的导电区域上形成覆盖层
公开(公告)号：US08030772B2
公开(公告)日：2011-10-04
申请号：US12124113
申请日：2008-05-20
申请人： David E. Lazovsky , Sandra G. Malhotra , Thomas R. Boussie
发明人： David E. Lazovsky , Sandra G. Malhotra , Thomas R. Boussie
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/7685 , B82Y30/00 , H01L21/02118 , H01L21/02167 , H01L21/0217 , H01L21/02203 , H01L21/288 , H01L21/31 , H01L21/76834
摘要： Devices are presented including: a substrate including a dielectric region and a conductive region; a molecular self-assembled layer selectively formed on the dielectric region; and a capping layer formed on the conductive region, where the capping layer is an electrically conductive material such as: an alloy of cobalt and boron material, an alloy of cobalt, tungsten, and phosphorous material, an alloy of nickel, molybdenum, and phosphorous. In some embodiments, devices are presented where the molecular self-assembled layer includes one or more of a polyelectrolyte, a dendrimer, a hyper-branched polymer, a polymer brush, a block co-polymer, and a silane-based material where the silane-based material includes one or more hydrolysable substituents of a general formula RnSiX4-n, where R is: an alkyl, a substituted alkyl, a fluoroalkyl, an aryl, a substituted aryl, and a fluoroaryl, and where X is: a halo, an alkoxy, an aryloxy, an amino, an octadecyltrichlorosilane, and an aminopropyltrimethoxysilane.
摘要翻译：本发明提供了包括：包括电介质区域和导电区域的衬底; 选择性地形成在电介质区域上的分子自组装层; 以及形成在导电区域上的覆盖层，其中覆盖层是导电材料，例如钴和硼材料的合金，钴，钨和磷材料的合金，镍，钼和磷的合金。在一些实施方案中，存在装置，其中分子自组装层包括聚电解质，树枝状聚合物，超支化聚合物，聚合物刷，嵌段共聚物和硅烷基材料中的一种或多种，其中硅烷基团的材料包括一个或多个通式R n SiX 4-n的可水解取代基，其中R是：烷基，取代的烷基，氟代烷基，芳基，取代的芳基和氟代芳基，其中X是：卤素，烷氧基，芳氧基，氨基，十八烷基三氯硅烷和氨基丙基三甲氧基硅烷。

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