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1. 发明申请

WO2017106650A1 INCREASED CONTACT ALIGNMENT TOLERANCE FOR DIRECT BONDING 审中-公开
标题翻译：增加接触对齐公差以直接结合
公开(公告)号：WO2017106650A1
公开(公告)日：2017-06-22
申请号：PCT/US2016/067182
申请日：2016-12-16
申请人： ZIPTRONIX, INC.
发明人： ENQUIST, Paul, M. , FOUNTAIN, Gaius, Gillman , DELACRUZ, Javier, A.
IPC分类号： H01L21/52 , H01L21/18 , H01L21/768 , H01L23/00
CPC分类号： H01L23/5283 , H01L21/76838 , H01L23/5226 , H01L24/02 , H01L25/0657 , H01L25/50 , H01L2224/16145 , H01L2224/80 , H01L2225/06513 , H01L2225/06555 , H01L2225/06593
摘要： A bonded device structure including a first substrate having a first set of conductive contact structures, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the contact structures on the first substrate, a second substrate having a second set of conductive contact structures, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the contact structures on the second substrate, and a contact-bonded interface between the first and second set of contact structures formed by contact bonding of the first non-metallic region to the second non- metallic region. The contact structures include elongated contact features, such as individual lines or lines connected in a grid, that are non-parallel on the two substrates, making contact at intersections. Alignment tolerances are thus improved while minimizing dishing and parasitic capacitance.
摘要翻译：包括具有第一组导电触点结构的第一衬底，所述第一组导电触点结构优选连接到器件或电路，并且具有与第一衬底上的触点结构相邻的第一非金属区域具有第二组导电触点结构的第二衬底，所述第二组导电触点结构优选连接到器件或电路，并具有与所述第二衬底上的所述触点结构相邻的第二非金属区域，以及所述第一和第二触点之间的接触键合界面通过第一非金属区与第二非金属区的接触结合形成的一组接触结构。接触结构包括细长的接触特征，诸如在网格中连接的单独的线或线，其在两个基板上不平行，在交叉点处进行接触。因此，对齐公差得到了改善，同时最大限度地减小了凹陷和寄生电容。

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