专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07115341B2 Halftone phase shift mask blank, halftone phase shift mask, and method of producing the same 有权
公开(公告)号：US07115341B2
公开(公告)日：2006-10-03
申请号：US10370776
申请日：2003-02-24
申请人： Yuuki Shiota , Osamu Nozawa , Ryo Ohkubo , Hideaki Mitsui
发明人： Yuuki Shiota , Osamu Nozawa , Ryo Ohkubo , Hideaki Mitsui
IPC分类号： G01F9/00
CPC分类号： G03F1/32 , G03F1/80 , Y10T428/24331 , Y10T428/31616
摘要： A halftone phase shift mask blank for use in manufacturing a halftone phase shift mask comprises a transparent substrate, a light transmitting portion formed on the substrate for transmitting an exposure light beam, a phase shifter portion formed on the substrate for transmitting a part of the exposure light beam as a transmitted light beam and for shifting a phase of the transmitted light beam by a predetermined amount, and a phase shifter film for forming the phase shifter portion. The halftone phase shift mask has an optical characteristic such that light beams passing through the light transmitting portion and through the phase shifter portion cancel each other in the vicinity of a boundary portion therebetween, thereby maintaining and improving an excellent contrast at a boundary portion of an exposure pattern to be transferred onto the surface of an object to be exposed. The phase shifter film comprises a film containing silicon, oxygen, and nitrogen as main components and an etching stopper film formed between the film and transparent substrate.

2. 发明授权

US07632612B2 Halftone phase shift mask blank, halftone phase shift mask, and method of producing the same 有权
标题翻译：半色调相移掩模空白，半色调相移掩模及其制造方法
公开(公告)号：US07632612B2
公开(公告)日：2009-12-15
申请号：US11478687
申请日：2006-07-03
申请人： Yuuki Shiota , Osamu Nozawa , Ryo Ohkubo , Hideaki Mitsui
发明人： Yuuki Shiota , Osamu Nozawa , Ryo Ohkubo , Hideaki Mitsui
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/80 , Y10T428/24331 , Y10T428/31616
摘要： A halftone phase shift mask blank for use in manufacturing a halftone phase shift mask comprises a transparent substrate, a light transmitting portion formed on the substrate for transmitting an exposure light beam, a phase shifter portion formed on the substrate for transmitting a part of the exposure light beam as a transmitted light beam and for shifting a phase of the transmitted light beam by a predetermined amount, and a phase shifter film for forming the phase shifter portion. The halftone phase shift mask has an optical characteristic such that light beams passing through the light transmitting portion and through the phase shifter portion cancel each other in the vicinity of a boundary portion therebetween, thereby maintaining and improving an excellent contrast at a boundary portion of an exposure pattern to be transferred onto the surface of an object to be exposed. The phase shifter film comprises a film containing silicon, oxygen, and nitrogen as main components and an etching stopper film formed between the film and transparent substrate.
摘要翻译：用于制造半色调相移掩模的半色调相移掩模坯料包括透明基板，形成在用于透射曝光光束的基板上的透光部分，形成在基板上用于透射部分曝光的移相器部分光束作为透射光束并且将透射光束的相位移动预定量，以及用于形成移相器部分的移相器膜。半色调相移掩模具有使得通过透光部分和通过移相器部分的光束在它们之间的边界部分附近彼此抵消，从而保持和改善在边界部分处的优异的对比度曝光图案被转印到要曝光的物体的表面上。移相器膜包括以硅，氧和氮为主要成分的膜和形成在膜和透明基底之间的蚀刻阻挡膜。

3. 发明申请

US20070082278A1 Halftone phase shift mask blank, halftone phase shift mask, and method of producing the same 有权
标题翻译：半色调相移掩模空白，半色调相移掩模及其制造方法
公开(公告)号：US20070082278A1
公开(公告)日：2007-04-12
申请号：US11478687
申请日：2006-07-03
申请人： Yuuki Shiota , Osamu Nozawa , Ryo Ohkubo , Hideaki Mitsui
发明人： Yuuki Shiota , Osamu Nozawa , Ryo Ohkubo , Hideaki Mitsui
IPC分类号： B32B9/00 , B32B17/06 , G03C5/00 , G21K5/00 , B32B17/10 , G03F1/00
CPC分类号： G03F1/32 , G03F1/80 , Y10T428/24331 , Y10T428/31616
摘要： A halftone phase shift mask blank for use in manufacturing a halftone phase shift mask comprises a transparent substrate, a light transmitting portion formed on the substrate for transmitting an exposure light beam, a phase shifter portion formed on the substrate for transmitting a part of the exposure light beam as a transmitted light beam and for shifting a phase of the transmitted light beam by a predetermined amount, and a phase shifter film for forming the phase shifter portion. The halftone phase shift mask has an optical characteristic such that light beams passing through the light transmitting portion and through the phase shifter portion cancel each other in the vicinity of a boundary portion therebetween, thereby maintaining and improving an excellent contrast at a boundary portion of an exposure pattern to be transferred onto the surface of an object to be exposed. The phase shifter film comprises a film containing silicon, oxygen, and nitrogen as main components and an etching stopper film formed between the film and transparent substrate.
摘要翻译：用于制造半色调相移掩模的半色调相移掩模坯料包括透明基板，形成在用于透射曝光光束的基板上的透光部分，形成在基板上用于透射部分曝光的移相器部分光束作为透射光束并且将透射光束的相位移动预定量，以及用于形成移相器部分的移相器膜。半色调相移掩模具有使得通过透光部分和通过移相器部分的光束在它们之间的边界部分附近彼此抵消，从而保持和改善在边界部分处的优异的对比度曝光图案被转印到要曝光的物体的表面上。移相器膜包括以硅，氧和氮为主要成分的膜和形成在膜和透明基底之间的蚀刻阻挡膜。

4. 发明授权

US07592106B2 Halftone type phase shift mask blank and phase shift mask thereof 有权
标题翻译：半色调型相移掩模空白及其相移掩模
公开(公告)号：US07592106B2
公开(公告)日：2009-09-22
申请号：US11562217
申请日：2006-11-21
申请人： Yuuki Shiota , Osamu Nozawa , Hideaki Mitsui
发明人： Yuuki Shiota , Osamu Nozawa , Hideaki Mitsui
IPC分类号： G03F1/00 , G03C5/00
CPC分类号： G03F1/32 , G03F1/84
摘要： A halftone type phase shift mask blank including, on a transparent substrate, at least a phase shifter film having a predetermined transmittance for an exposed light and a predetermined phase difference for the transparent substrate, wherein the phase shifter film is formed by a multilayer film in which films including at least two layers having an upper layer formed on the most surface side and a lower layer formed thereunder are provided, and a thickness of the upper layer is adjusted in such a manner that a refractive index of the film to be the upper layer is smaller than that of the film to be the lower layer and a surface reflectance for the inspecting light of the phase shifter film is maximized and approximates to a maximum.
摘要翻译：一种半透明型相移掩模坯料，在透明基板上具有至少一透明基板具有预定透射率的移相膜和对于该透明基板的预定相位差，其中该移相膜由多层膜形成提供包括至少两层具有形成在最表面侧的上层和下面形成的下层的膜，并且以使膜的折射率成为上层的方式调节上层的厚度层比作为下层的膜小，并且移相膜的检查光的表面反射率最大化并近似为最大。

5. 发明申请

US20070092808A1 HALFTONE TYPE PHASE SHIFT MASK BLANK AND PHASE SHIFT MASK THEREOF 有权
标题翻译： HALFTONE类型相移屏蔽区和相位移屏蔽
公开(公告)号：US20070092808A1
公开(公告)日：2007-04-26
申请号：US11562217
申请日：2006-11-21
申请人： Yuuki Shiota , Osamu Nozawa , Hideaki Mitsui
发明人： Yuuki Shiota , Osamu Nozawa , Hideaki Mitsui
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/32 , G03F1/84
摘要： A halftone type phase shift mask blank including, on a transparent substrate, at least a phase shifter film having a predetermined transmittance for an exposed light and a predetermined phase difference for the transparent substrate, wherein the phase shifter film is formed by a multilayer film in which films including at least two layers having an upper layer formed on the most surface side and a lower layer formed thereunder are provided, and a thickness of the upper layer is adjusted in such a manner that a refractive index of the film to be the upper layer is smaller than that of the film to be the lower layer and a surface reflectance for the inspecting light of the phase shifter film is maximized and approximates to a maximum.
摘要翻译：一种半透明型相移掩模坯料，在透明基板上具有至少一透明基板具有预定透射率的移相膜和对于该透明基板的预定相位差，其中该移相膜由多层膜形成提供包括至少两层具有形成在最表面侧的上层和下面形成的下层的膜，并且以使膜的折射率成为上层的方式调节上层的厚度层比作为下层的膜小，并且移相膜的检查光的表面反射率最大化并近似为最大。

6. 发明申请

US20100040961A1 HALFTONE TYPE PHASE SHIFT MASK BLANK AND PHASE SHIFT MASK THEREOF 有权
标题翻译： HALFTONE类型相移屏蔽区和相位移屏蔽
公开(公告)号：US20100040961A1
公开(公告)日：2010-02-18
申请号：US12542282
申请日：2009-08-17
申请人： Yuuki Shiota , Osamu Nozawa , Hideaki Mitsui
发明人： Yuuki Shiota , Osamu Nozawa , Hideaki Mitsui
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/84
摘要： A halftone type phase shift mask blank including, on a transparent substrate, at least a phase shifter film having a predetermined transmittance for an exposed light and a predetermined phase difference for the transparent substrate, wherein the phase shifter film is formed by a multilayer film in which films including at least two layers having an upper layer formed on the most surface side and a lower layer formed thereunder are provided, and a thickness of the upper layer is adjusted in such a manner that a refractive index of the film to be the upper layer is smaller than that of the film to be the lower layer and a surface reflectance for the inspecting light of the phase shifter film is maximized and approximates to a maximum.
摘要翻译：一种半透明型相移掩模坯料，在透明基板上具有至少一透明基板具有预定透射率的移相膜和对于该透明基板的预定相位差，其中该移相膜由多层膜形成提供包括至少两层具有形成在最表面侧的上层和下面形成的下层的膜，并且以使膜的折射率成为上层的方式调节上层的厚度层比作为下层的膜小，并且移相膜的检查光的表面反射率最大化并近似为最大。

7. 发明授权

US07862963B2 Halftone type phase shift mask blank and phase shift mask thereof 有权
标题翻译：半色调型相移掩模空白及其相移掩模
公开(公告)号：US07862963B2
公开(公告)日：2011-01-04
申请号：US12542282
申请日：2009-08-17
申请人： Yuuki Shiota , Osamu Nozawa , Hideaki Mitsui
发明人： Yuuki Shiota , Osamu Nozawa , Hideaki Mitsui
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/84
摘要： A halftone type phase shift mask blank including, on a transparent substrate, at least a phase shifter film having a predetermined transmittance for an exposed light and a predetermined phase difference for the transparent substrate, wherein the phase shifter film is formed by a multilayer film in which films including at least two layers having an upper layer formed on the most surface side and a lower layer formed thereunder are provided, and a thickness of the upper layer is adjusted in such a manner that a refractive index of the film to be the upper layer is smaller than that of the film to be the lower layer and a surface reflectance for the inspecting light of the phase shifter film is maximized and approximates to a maximum.
摘要翻译：一种半透明型相移掩模坯料，在透明基板上具有至少一透明基板具有预定透射率的移相膜和对于该透明基板的预定相位差，其中该移相膜由多层膜形成提供包括至少两层具有形成在最表面侧的上层和下面形成的下层的膜，并且以使膜的折射率成为上层的方式调节上层的厚度层比作为下层的膜小，并且移相膜的检查光的表面反射率最大化并近似为最大。

8. 发明授权

US07169513B2 Halftone type phase shift mask blank and phase shift mask thereof 有权
标题翻译：半色调型相移掩模空白及其相移掩模
公开(公告)号：US07169513B2
公开(公告)日：2007-01-30
申请号：US10370713
申请日：2003-02-24
申请人： Yuuki Shiota , Osamu Nozawa , Hideaki Mitsui
发明人： Yuuki Shiota , Osamu Nozawa , Hideaki Mitsui
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/84
摘要： A halftone type phase shift mask blank including, on a transparent substrate, at least a phase shifter film having a predetermined transmittance for an exposed light and a predetermined phase difference for the transparent substrate, wherein the phase shifter film is formed by a multilayer film in which films including at least two layers having an upper layer formed on the most surface side and a lower layer formed thereunder are provided, and a thickness of the upper layer is adjusted in such a manner that a refractive index of the film to be the upper layer is smaller than that of the film to be the lower layer and a surface reflectance for the inspecting light of the phase shifter film is maximized and approximates to a maximum.
摘要翻译：一种半透明型相移掩模坯料，在透明基板上具有至少一透明基板具有预定透射率的移相膜和对于该透明基板的预定相位差，其中该移相膜由多层膜形成提供包括至少两层具有形成在最表面侧的上层和下面形成的下层的膜，并且以使膜的折射率成为上层的方式调节上层的厚度层比作为下层的膜小，并且移相膜的检查光的表面反射率最大化并近似为最大。

9. 发明授权

US07011910B2 Halftone-type phase-shift mask blank, and halftone-type phase-shift mask 有权
标题翻译：半色调型相移掩模空白和半色调型相移掩模
公开(公告)号：US07011910B2
公开(公告)日：2006-03-14
申请号：US10421944
申请日：2003-04-24
申请人： Yuki Shiota , Osamu Nozawa , Hideaki Mitsui , Ryo Ohkubo
发明人： Yuki Shiota , Osamu Nozawa , Hideaki Mitsui , Ryo Ohkubo
IPC分类号： G01F9/00
CPC分类号： G03F1/32 , G02B5/3083
摘要： In a halftone-type phase-shift mask blank having a phase shifter film 5, the phase shifter film 5 has a phase adjustment layer 4 for primarily controlling the phase of exposure light, and a transmissivity adjustment layer 3 which is formed between a transparent substrate 2 and the phase adjustment layer 4 and primarily controls the transmissivity of exposure light. The transmissivity adjustment layer 3 has a thickness of 90 angstroms or less.
摘要翻译：在具有移相膜5的半色调型移相掩模坯料中，移相膜5具有用于主要控制曝光光的相位的相位调整层4和形成在透明基板之间的透射率调节层3 2和相位调整层4，并主要控制曝光光的透射率。透射率调整层3的厚度为90埃以下。

10. 发明授权

US08012314B2 Manufacturing method and apparatus of phase shift mask blank 有权
标题翻译：相移掩模空白的制造方法和装置
公开(公告)号：US08012314B2
公开(公告)日：2011-09-06
申请号：US11688680
申请日：2007-03-20
申请人： Osamu Nozawa , Hideaki Mitsui
发明人： Osamu Nozawa , Hideaki Mitsui
IPC分类号： C23C14/34
CPC分类号： G03F1/32 , C23C14/0036 , C23C14/0641 , C23C14/225 , C23C14/505 , G03F1/26 , G03F1/68
摘要： There is disclosed a manufacturing method of a phase shift mask blank in which dispersions of phase angle and transmittance among blanks can be reduced as much as possible and yield is satisfactory. In the manufacturing method of the phase shift mask blank, a process of using a sputtering method to continuously form a thin film on a transparent substrate comprises: successively subjecting a plurality of substrates to a series of process of supplying the transparent substrate into a sputtering chamber, forming the thin film for forming a pattern in the sputtering chamber, and discharging the transparent substrate with the film formed thereon from the sputtering chamber; supplying and discharging the transparent substrate substantially at a constant interval; and setting a film formation time to be constant among a plurality of blanks.
摘要翻译：公开了一种相移掩模坯料的制造方法，其中可以尽可能地减少坯料之间的相位角和透射率的分散，并且产率令人满意。在相移掩模空白的制造方法中，使用溅射法在透明基板上连续地形成薄膜的工艺包括：依次对多个基板进行一系列将透明基板供应到溅射室在溅射室中形成用于形成图案的薄膜，并且从其上形成的膜从溅射室排出透明基板; 基本上以一定间隔供给和排出透明基板; 并且在多个坯料中将成膜时间设定为恒定。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式