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1. 发明申请

US20120257855A1 ARRAY-TYPE PHOTO MODULE 有权
标题翻译：阵列型照片模块
公开(公告)号：US20120257855A1
公开(公告)日：2012-10-11
申请号：US13410131
申请日：2012-03-01
申请人： Yuto Yamashita , Keiichi Sasaki , Etsuo Ogino , Yasuaki Tamura , Yuji Akahori , Yuichi Suzuki
发明人： Yuto Yamashita , Keiichi Sasaki , Etsuo Ogino , Yasuaki Tamura , Yuji Akahori , Yuichi Suzuki
IPC分类号： G02B6/32
CPC分类号： G02B6/425 , G02B6/4215
摘要： PROBLEMAn object of the present invention is to easily and inexpensively manufacture an array-type photo module and, in addition, coexist high-density array and low crosstalk.SOLUTIONThe present invention provides an array-type photo module M including a filter 31, which, in each channel, transmits therethrough a portion of emitting light from an incident optical fiber 11 on the opposite side of a gradient-index lens array 2 and reflects another portion of the emitting light from the incident optical fiber 11 toward the gradient-index lens array 2, and a light-shielding member 32 (33) which is arranged on the opposite side of the gradient-index lens array 2 of the filter 31 so as to be spaced from the filter 31 and, in each channel, has an opening 34 (35) passing therethrough transmitted light from the filter 31 on the opposite side of the filter 31.
摘要翻译：发明内容本发明的目的在于容易且廉价地制造阵列型照相模块，另外共存高密度阵列和低串扰。解决方案本发明提供一种阵列型光模块M，其包括滤光器31，滤光器31在每个通道中透过其中一部分发射光，该入射光纤11位于梯度折射率透镜阵列2的相对侧并反射来自入射光纤11的发光的另一部分朝向梯度折射率透镜阵列2，以及设置在滤光器31的梯度折射率透镜阵列2的相反侧的遮光部件32（33）与过滤器31隔开，并且在每个通道中具有穿过过滤器31的相反侧上的来自过滤器31的透射光的开口34（35）。

2. 发明授权

US08744223B2 Array-type photo module 有权
标题翻译：阵列型照片模块
公开(公告)号：US08744223B2
公开(公告)日：2014-06-03
申请号：US13410131
申请日：2012-03-01
申请人： Yuto Yamashita , Keiichi Sasaki , Etsuo Ogino , Yasuaki Tamura , Yuji Akahori , Yuichi Suzuki
发明人： Yuto Yamashita , Keiichi Sasaki , Etsuo Ogino , Yasuaki Tamura , Yuji Akahori , Yuichi Suzuki
IPC分类号： G02B6/32
CPC分类号： G02B6/425 , G02B6/4215
摘要： The present invention provides an array-type photo module including a filter, which, in each channel, transmits therethrough a portion of emitted light from an incident optical fiber on the opposite side of a gradient-index lens array and reflects another portion of the emitted light from the incident optical fiber toward the gradient-index lens array, and a light-shielding member which is arranged on the opposite side of the filter from the gradient-index lens array, so as to be spaced from the filter and, in each channel, has an opening passing therethrough transmitted light from the filter on the opposite side of the filter. The array-type photo module is easily and inexpensively manufactured, and may be used in a high-density array, with low crosstalk.
摘要翻译：本发明提供了一种阵列型照相模块，它包括一个滤光器，它在每个通道中透过其中一部分来自入射光纤的发射光，在入射光纤位于相反的一个梯度折射率透镜阵列上，从入射光纤到达梯度折射率透镜阵列的光;以及遮光构件，其设置在与滤光镜相反的一侧，与滤光镜相隔离，并且每个通道具有穿过过滤器相对侧上的来自过滤器的透射光的开口。阵列型光模块容易且廉价地制造，并且可以以低串扰的高密度阵列使用。

3. 发明授权

US08977083B2 Photo module 有权
标题翻译：照片模块
公开(公告)号：US08977083B2
公开(公告)日：2015-03-10
申请号：US14113828
申请日：2012-04-03
申请人： Yuto Yamashita , Etsuo Ogino , Keiichi Sasaki
发明人： Yuto Yamashita , Etsuo Ogino , Keiichi Sasaki
IPC分类号： G02B6/32 , G02B6/42
CPC分类号： G02B6/32 , G02B6/4206 , G02B6/425
摘要： The photo module is provided with an incident light fiber guiding light, a gradient index lens having an optical axis different from the incident light fiber, having a period length larger than a ¼ period length and smaller than a ½ period length with respect to the wavelength of the incident light, joined to the incident light fiber on a surface forming a finite angle with a surface vertical to the optical axis, and having, as a light exit surface of emitting light, a surface substantially vertical to the optical axis, and a light receiving element disposed at a position where the emitting light is collected and measuring the strength of the emitting light.
摘要翻译：光模块设置有入射光纤引导光，具有不同于入射光纤的光轴的梯度折射率透镜，其周期长度大于1/4周期长度并且小于相对于波长的1/2周期长度的入射光在与垂直于光轴的表面形成有限角度的表面上接合入射光纤，并且具有作为发光的光出射面，基本上垂直于光轴的表面，以及光接收元件设置在收集发光的位置并测量发光的强度。

4. 发明申请

US20140112620A1 PHOTO MODULE 有权
标题翻译：照片模组
公开(公告)号：US20140112620A1
公开(公告)日：2014-04-24
申请号：US14113828
申请日：2012-04-03
申请人： Yuto Yamshita , Etsuo Ogino , Keiichi Sasaki
发明人： Yuto Yamshita , Etsuo Ogino , Keiichi Sasaki
IPC分类号： G02B6/32
CPC分类号： G02B6/32 , G02B6/4206 , G02B6/425
摘要： A photo module which measures a signal strength in a transmission path, and this technique collects a signal light, guided to a photo module, on a light receiving element without increasing the number of manufacturing processes and the cost and, at the same time, prevents reflected light returned from the photo module from entering inside the transmission path again.The photo module is provided with an incident light fiber guiding incident light, a gradient index lens having an optical axis different from the incident light fiber, having a period length larger than a ¼ period length and smaller than a ½ period length with respect to the wavelength of the incident light, joined to the incident light fiber on a surface forming a finite angle with a surface vertical to the optical axis, and having, as a light exit surface of emitting light, a surface substantially vertical to the optical axis, and a light receiving element disposed at a position where the emitting light is collected and measuring the strength of the emitting light.
摘要翻译：测量传输路径中的信号强度的照片模块，并且该技术在不增加制造工艺数量和成本的情况下收集被引导到光接收元件上的照相模块的信号光，并且同时防止从照相模块返回的反射光再次进入传输路径内。光模块设置有引入入射光的入射光纤，具有不同于入射光纤的光轴的渐变折射率透镜，其周期长度大于1/4周期长度，并且小于相对于入射光的波长，在与光轴垂直的表面形成有限角度的表面上接合入射光纤，并且具有作为发光的光出射面，基本上垂直于光轴的表面，以及设置在收集发光的位置处的光接收元件，并测量发光的强度。

5. 发明申请

US20090073228A1 THROUGH-HOLE FORMING METHOD, INKJET HEAD, AND SILICON SUBSTRATE 失效
标题翻译：通孔形成方法，喷头和硅基板
公开(公告)号：US20090073228A1
公开(公告)日：2009-03-19
申请号：US12197499
申请日：2008-08-25
申请人： Keiichi Sasaki , Yukihiro Hayakawa
发明人： Keiichi Sasaki , Yukihiro Hayakawa
IPC分类号： B41J2/015 , H01L21/00 , H01L23/58
CPC分类号： H01L21/308 , B41J2/1603 , B41J2/1629 , B41J2/1631 , B41J2/1642 , B41J2202/13 , H01L29/06
摘要： A through-hole forming method includes steps of forming a first impurity region (102a) around a region where a through-hole is to be formed in the first surface of a silicon substrate (101), the first impurity region (102) being higher in impurity concentration than the silicon substrate (101), forming a second impurity region (102b) at a position adjacent to the first impurity region (102a) in the depth direction of the silicon substrate (101), the second impurity region (102b) being higher in impurity concentration than the first impurity region (102a), forming an etch stop layer (103) on the first surface, forming an etch mask layer (104) having an opening on the second surface of the silicon substrate (101) opposite to the first surface, and etching the silicon substrate (101) until at least the etch stop layer (103) is exposed via the opening.
摘要翻译：通孔形成方法包括以下步骤：在硅衬底（101）的第一表面中形成在要形成通孔的区域周围的第一杂质区域（102a），第一杂质区域（102）更高在所述硅衬底（101）的深度方向上与所述第一杂质区（102a）相邻的位置形成第二杂质区（102b），所述第二杂质区（102b）杂质浓度高于第一杂质区（102a），在第一表面上形成蚀刻停止层（103），形成在硅衬底（101）的第二表面上具有开口的蚀刻掩模层（104）并且蚀刻硅衬底（101），直到至少蚀刻停止层（103）经由开口露出。

6. 发明授权

US06933216B2 Fine particle film forming apparatus and method and semiconductor device and manufacturing method for the same 失效
公开(公告)号：US06933216B2
公开(公告)日：2005-08-23
申请号：US10314364
申请日：2002-12-09
申请人： Atsuko Sakata , Keiichi Sasaki , Nobuo Hayasaka , Katsuya Okumura , Hirotaka Nishino
发明人： Atsuko Sakata , Keiichi Sasaki , Nobuo Hayasaka , Katsuya Okumura , Hirotaka Nishino
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/60 , H01L23/485 , H01L21/20
CPC分类号： H01L24/03 , H01L23/481 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/742 , H01L2224/0401 , H01L2224/05022 , H01L2224/0557 , H01L2224/05571 , H01L2224/05624 , H01L2224/11001 , H01L2224/1131 , H01L2224/11334 , H01L2224/1147 , H01L2224/13022 , H01L2224/13025 , H01L2224/13099 , H01L2224/13144 , H01L2924/00011 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01022 , H01L2924/01028 , H01L2924/01033 , H01L2924/01039 , H01L2924/01046 , H01L2924/0105 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/05042 , H01L2924/12042 , H01L2924/13091 , H01L2924/14 , H01L2924/00014 , H01L2924/00 , H01L2224/05552 , H01L2224/81805
摘要： After a barrier film is formed on a pad electrode, Ni particles having a diameter of 2 μm or less are selectively deposited on the barrier film, thereby forming a Ni fine particle film. Then, a bump electrode made of a solder ball is provided on the pad electrode through the Ni fine particle film. Thereafter, the bump electrode is melted by a heat treatment to join the Ni fine particle film to the bump electrode. Thus, a bump electrode structure is finished.

7. 发明申请

US20050179744A1 Liquid discharge head and method of manufacturing the same 失效
标题翻译：液体排放头及其制造方法
公开(公告)号：US20050179744A1
公开(公告)日：2005-08-18
申请号：US11058164
申请日：2005-02-16
申请人： Keiichi Sasaki
发明人： Keiichi Sasaki
IPC分类号： B41J2/05 , B41J2/16 , C23F1/02 , C03C15/00 , B41J2/015 , B44C1/22 , C03C25/68 , C23F1/00 , G01D15/00 , G11B5/127 , H01B13/00
CPC分类号： B41J2/1628 , B41J2/1603 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1639 , B41J2/1642 , B41J2/1643 , B41J2/1646 , C23F1/02
摘要： A method of manufacturing a liquid discharge head, comprising the steps of forming a film of an inorganic material in the form of a liquid flow path pattern on a substrate having liquid discharge elements formed thereon, forming a liquid flow path member on the film of the inorganic material using one of silicon oxide, silicon carbide, and carbon doped silicon oxide (SiOC), forming liquid discharge openings in corresponding portions above the liquid discharge elements, and eluting the film of the inorganic material so as to form a liquid flow path.
摘要翻译：一种液体排出头的制造方法，包括以下步骤：在其上形成有液体排出元件的基板上形成液态流路图案形式的无机材料的膜，在其上形成液体流道部件使用氧化硅，碳化硅和碳掺杂氧化硅（SiOC）中的一种的无机材料，在液体排出元件上方的相应部分中形成液体排出口，并且洗脱无机材料的膜以形成液体流动路径。

8. 发明申请

US20050031996A1 Method for producing circuit substrate 失效
标题翻译：电路基板的制造方法
公开(公告)号：US20050031996A1
公开(公告)日：2005-02-10
申请号：US10910271
申请日：2004-08-04
申请人： Keiichi Sasaki , Masato Kamiichi , Yukihiro Hayakawa , Ershad Chowdhury
发明人： Keiichi Sasaki , Masato Kamiichi , Yukihiro Hayakawa , Ershad Chowdhury
IPC分类号： B41J2/14 , B41J2/16 , G03F7/00 , H05K1/09 , H05K1/16 , H05K3/02 , H05K3/06 , H05K3/28
CPC分类号： H05K1/167 , B41J2/14072 , B41J2/14129 , B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1642 , B41J2/1643 , B41J2/1646 , H05K1/09 , H05K3/06 , H05K3/067 , H05K2201/0317 , H05K2203/0361
摘要： In order to provide a circuit substrate with a satisfactory step coverage by the protective layer and the anti-cavitation film in an edge portion of wirings and a liquid discharge head utilizing such circuit substrate, the invention provides a method for producing a circuit substrate provided, on an insulating surface of a substrate, with a plurality of elements each including a resistive layer and a pair of electrodes formed with a predetermined spacing on said resistive layer, including a step of forming an aluminum electrode wiring layer on the resistive layer, a step of isolating the electrode wiring layer by dry etching into each element, and a step of forming the electrode wiring into a tapered cross section with an etching solution containing phosphoric acid, nitric acid and a chelating agent capable of forming a complex with the wiring metal.
摘要翻译：为了通过利用这种电路基板的布线边缘部分中的保护层和防空穴膜提供令人满意的阶梯覆盖的电路基板，本发明提供一种制造电路基板的方法，在基板的绝缘表面上，多个元件各自包括电阻层和在所述电阻层上以预定间隔形成的一对电极，包括在电阻层上形成铝电极布线层的步骤，步骤通过干蚀刻将电极配线层隔离成各元件，以及通过含有与配线金属形成络合物的磷酸，硝酸和螯合剂的蚀刻液将电极配线形成为锥形截面的工序。

9. 发明申请

US20050014311A1 Multichip semiconductor device, chip therefor and method of formation thereof 有权
标题翻译：多芯片半导体器件，芯片及其形成方法
公开(公告)号：US20050014311A1
公开(公告)日：2005-01-20
申请号：US10902391
申请日：2004-07-30
申请人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
发明人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
IPC分类号： H01L21/768 , H01L23/48 , H01L23/64 , H01L25/065 , H01L25/10 , H01L21/44 , H01L21/4763 , H01L21/48 , H01L29/40
CPC分类号： H01L23/642 , H01L21/76898 , H01L23/367 , H01L23/481 , H01L25/0655 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/13025 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06572 , H01L2225/06589 , H01L2225/1023 , H01L2225/1058 , H01L2924/01046 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/13091 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/1532 , H01L2924/15331 , H01L2924/00
摘要： A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.
摘要翻译：公开了一种多芯片半导体器件，其中堆叠芯片，每个芯片包括形成在顶部的半导体衬底和电路部件，以及形成在半导体衬底的顶部上的层间绝缘膜。至少一个芯片具有穿过半导体衬底和层间绝缘膜的通孔中形成的金属的连接插头。具有连接插头的芯片通过该连接插头与另一个芯片电连接。

10. 发明授权

US06376894B1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06376894B1
公开(公告)日：2002-04-23
申请号：US09525107
申请日：2000-03-14
申请人： Hiroshi Ikegami , Keiichi Sasaki , Nobuo Hayasaka
发明人： Hiroshi Ikegami , Keiichi Sasaki , Nobuo Hayasaka
IPC分类号： H01L2900
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： There is provided a semiconductor device in which redundancy fuses formed in an upper layer wiring region can be cut without damaging an underlying Si substrate or adjacent regions. The semiconductor device comprises a lower layer wiring formed within an interlayer insulating film on the Si substrate, and an upper layer metal wiring made of Al, Cu or the like, formed above the lower layer wiring and connected thereto through a via metal, wherein the redundancy fuses are formed in the same wiring layer as the upper layer metal wiring. For cutting a fuse by irradiating with a laser having a wavelength in a range of 1,000 to 1,100 nm and a beam diameter D (&mgr;m), the fuse may be designed to have a film thickness T (&mgr;m) and a width W (&mgr;m) which satisfy T≦(−0.15 (D+2&sgr;)+0.46) exp (2W), where &sgr; (&mgr;m) is an alignment accuracy of the center of the laser beam to the center of the fuse, with the result that the fuse formed in the same wiring layer as the upper layer metal wiring can be cut without damaging the Si substrate, an adjacent fuse and the upper layer metal wiring.
摘要翻译：提供了一种半导体器件，其中可以切割形成在上层布线区域中的冗余熔丝而不损坏下面的Si衬底或相邻区域。半导体器件包括形成在Si衬底上的层间绝缘膜内的下层布线和由Al，Cu等制成的上层金属布线，其形成在下层布线的上方并通过通孔金属连接，冗余熔丝形成在与上层金属布线相同的布线层中。为了通过用波长在1000至1100nm的波长和光束直径D（母体）的激光照射来切割熔丝，可以将熔丝设计成具有膜厚T（mum）和宽度W（mum）其满足T <=（ - 0.15（D + 2sigma）+0.46）exp（2W），其中σ（mum）是激光束的中心对熔丝的中心的对准精度，结果是熔丝形成在与上层金属布线相同的布线层中，不会损坏Si基板，相邻的熔丝和上层金属布线。

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