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1. 发明授权

US08303607B2 Medical device 失效
标题翻译：医疗装置
公开(公告)号：US08303607B2
公开(公告)日：2012-11-06
申请号：US12677025
申请日：2008-09-26
申请人： Yutaka Suzuki , Hideaki Matsunami , Yukihiko Sakaguchi , Masao Ikeda , Yasunori Kojo
发明人： Yutaka Suzuki , Hideaki Matsunami , Yukihiko Sakaguchi , Masao Ikeda , Yasunori Kojo
IPC分类号： A61B17/04
CPC分类号： A61B17/0482 , A61B17/0485 , A61B17/3403 , A61B17/3415 , A61B2017/06052 , A61B2017/3407 , A61B2017/3409 , A61B2090/061 , A61B2090/062
摘要： A medical device includes a main body elongated in a vertical direction. A guide section protrudes from a lower end of the main body in a direction crossing the vertical direction and includes first and second guide holes. A first unit includes a first puncture needle slidably supported by the main body near an upper end of the first puncture needle in the vertical direction and having a sharp lower end slidably inserted into the first guide hole from above. The first unit has a first holding plate integrally fixed to the first puncture needle. A second unit includes a second puncture needle slidably inserted into the second guide hole from above and a second holding plate integrally fixed to the second puncture needle. The second holding plate separably abuts on the first holding plate from above. A position of the second guide hole is selectable along the guide section.
摘要翻译：医疗装置包括沿垂直方向伸长的主体。引导部分从主体的下端沿垂直方向交叉的方向突出并包括第一和第二引导孔。第一单元包括第一穿刺针，所述第一穿刺针在垂直方向上靠近所述第一穿刺针的上端附近被所述主体可滑动地支撑，并且具有从上方可滑动地插入到所述第一引导孔中的尖锐的下端。第一单元具有与第一穿刺针一体地固定的第一保持板。第二单元包括从上方可滑动地插入第二引导孔的第二穿刺针和与第二穿刺针一体地固定的第二保持板。第二保持板从上方可分离地抵接在第一保持板上。第二引导孔的位置沿引导部可选择。

2. 发明授权

US08277463B2 Medical device and method of fixing internal organ 有权
标题翻译：内脏器官的医疗装置及方法
公开(公告)号：US08277463B2
公开(公告)日：2012-10-02
申请号：US12225209
申请日：2007-02-16
申请人： Yutaka Suzuki , Hideaki Matsunami , Yasunori Kojo , Yukihiko Sakaguchi , Masao Ikeda
发明人： Yutaka Suzuki , Hideaki Matsunami , Yasunori Kojo , Yukihiko Sakaguchi , Masao Ikeda
IPC分类号： A61B17/10
CPC分类号： A61B17/3403 , A61B17/0482 , A61B17/0483 , A61B2017/0472 , A61B2017/3405 , A61B2017/3407
摘要： A medical device (1) includes a main body (2); a first piercing needle (4) provided slidably with respect to the main body (2); a first holding plate (61) adapted to hold the first piercing needle (4) and provided slidably on the main body (2); and a second holding plate (62) adapted to hold a second piercing needle (3) and detachably and movably mounted on the first holding plate (61), wherein the second holding plate (62) is mounted so as to move to the first holding plate (61) in a predetermined direction.
摘要翻译：医疗器具（1）包括主体（2）; 相对于主体（2）可滑动地设置的第一穿刺针（4）; 第一保持板（61），其适于保持第一穿刺针（4）并且可滑动地设置在主体（2）上; 以及第二保持板（62），其适于保持第二穿刺针（3）并且可拆卸地且可移动地安装在所述第一保持板（61）上，其中所述第二保持板（62）被安装成移动到所述第一保持板（61）沿预定方向。

3. 发明申请

US20090062817A1 Medical Device and Method of Fixing Internal Organ 有权
标题翻译：医疗器械及内脏固定方法
公开(公告)号：US20090062817A1
公开(公告)日：2009-03-05
申请号：US12225209
申请日：2007-02-16
申请人： Yutaka Suzuki , Hideaki Matsunami , Yasunori Kojo , Yukihiko Sakaguchi , Masao Ikeda
发明人： Yutaka Suzuki , Hideaki Matsunami , Yasunori Kojo , Yukihiko Sakaguchi , Masao Ikeda
IPC分类号： A61B17/04
CPC分类号： A61B17/3403 , A61B17/0482 , A61B17/0483 , A61B2017/0472 , A61B2017/3405 , A61B2017/3407
摘要： A medical device (1) includes a main body (2); a first piercing needle (4) provided slidably with respect to the main body (2); a first holding plate (61) adapted to hold the first piercing needle (4) and provided slidably on the main body (2); and a second holding plate (62) adapted to hold a second piercing needle (3) and detachably and movably mounted on the first holding plate (61), wherein the second holding plate (62) is mounted so as to move to the first holding plate (61) in a predetermined direction.
摘要翻译：医疗器具（1）包括主体（2）; 相对于主体（2）可滑动地设置的第一穿刺针（4）; 第一保持板（61），其适于保持第一穿刺针（4）并且可滑动地设置在主体（2）上; 以及第二保持板（62），其适于保持第二穿刺针（3）并且可拆卸地且可移动地安装在所述第一保持板（61）上，其中所述第二保持板（62）被安装成移动到所述第一保持板（61）沿预定方向。

4. 发明申请

US20100312261A1 SHEATH FOR GASTROSTOMA, SHEATHED DILATOR, SHEATH FOR GASTROSTOMA WITH INSERTION AID, GASTROSTOMY CATHETER KIT, AND METHOD OF SPLITTING SHEATH FOR GASTROSTOMA 审中-公开
标题翻译：用于胃肠道，用于胃肠道，胃肠道用于胃肠道，胃肠道导管套件，以及用于胃肠道分割的方法
公开(公告)号：US20100312261A1
公开(公告)日：2010-12-09
申请号：US12745458
申请日：2008-12-01
申请人： Yutaka Suzuki , Hideaki Matsunami , Yukihiko Sakaguchi , Masao Ikeda , Tomokazu Nakayama , Keiji Kamata , Ryo Tanaka
发明人： Yutaka Suzuki , Hideaki Matsunami , Yukihiko Sakaguchi , Masao Ikeda , Tomokazu Nakayama , Keiji Kamata , Ryo Tanaka
IPC分类号： A61B17/11
CPC分类号： A61M25/0668 , A61B5/1076 , A61B5/42 , A61B17/3415 , A61J15/0007 , A61J15/0023 , A61J15/0026 , A61J15/003 , A61J15/0038 , A61J15/0065 , A61M25/0662 , A61M29/00 , A61M2025/0008 , A61M2025/0681
摘要： The present invention provides a sheath for gastrostoma (1), a sheathed dilator, a gastrostomy catheter kit and a method of splitting a sheath for gastrostoma. The sheath for gastrostoma (1) includes a sheath body (11) in which a gastrostomy catheter (2) is inserted and a handle (12). The sheath for gastrostoma (1) lowers the insertion resistance of a gastrostomy catheter when inserted in a fistula before insertion of the gastrostomy catheter in the fistula for replacement in the patient's body. According to the invention, a sheath for gastrostoma, a sheathed dilator, a sheath for gastrostoma with insertion aid, a gastrostomy catheter kit and a method of splitting a sheath for gastrostoma which can lower the insertion resistance during placement of a catheter in the patient's body, facilitate air supply control of an endoscope and stabilize endoscopic visual field during surgery are provided.
摘要翻译：本发明提供了胃瘘用鞘（1），护套扩张器，胃造口导管套件以及分割胃瘘用护套的方法。胃瘘用鞘（1）包括鞘体（11），其中插入有胃造口术导管（2）和手柄（12）。在将胃造口术导管插入瘘管中以在患者体内更换时，用于胃瘘（1）的护套（1）降低插入瘘管时胃造口术导管的插入阻力。根据本发明，胃瘘用护套，护套扩张器，带插入辅助器的胃瘘用鞘，胃造口导管套件以及分割胃瘘用护套的方法，能够降低将导管插入患者体内时的插入阻力提供内窥镜的供气控制，并且在手术期间稳定内窥镜视野。

5. 发明申请

US20140033830A1 GRINDING ABNORMALITY MONITORING METHOD AND GRINDING ABNORMALITY MONITORING DEVICE 有权
标题翻译：研磨异常监测方法和研磨异常监测装置
公开(公告)号：US20140033830A1
公开(公告)日：2014-02-06
申请号：US13884777
申请日：2011-12-22
申请人： Tomoyuki Kasuga , Atsushi Saito , Takayuki Yoshimi , Masao Ikeda
发明人： Tomoyuki Kasuga , Atsushi Saito , Takayuki Yoshimi , Masao Ikeda
IPC分类号： B24B49/16 , G01L5/00
CPC分类号： G01L5/0076 , B24B5/04 , B24B19/06 , B24B49/003 , B24B49/105 , B24B49/14 , B24B49/16 , G01L5/12
摘要： A grinding abnormality monitoring method and device for grinding a plurality of works of the same type are proposed which can improve the accuracy of judgment whether an abnormality is generated or not by properly setting a threshold value. According to the method or the device, by setting at least one of upper and lower limit values of a trial grinding load detected at the trial grinding of at least one of the works, an occurrence of grinding abnormality is judged when an actual grinding load detected at the actual grinding of work exceeds at least one of the upper and lower limit values thereof which varies depending on the time elapsed from the start of the actual grinding or a position of work relative to a grinding wheel.
摘要翻译：提出了一种用于研磨相同类型的多个作业的研磨异常监测方法和装置，其可以通过适当地设定阈值来提高判断是否产生异常的判断精度。根据该方法或装置，通过设定在至少一个工件的试磨中检测到的试验研磨载荷的上限值和下限值中的至少一个，当检测到实际研磨载荷时，判断出磨削异常的发生在实际的工件磨削中，超过其上下限值中的至少一个，这些上限值和下限值根据实际磨削开始时所经过的时间或相对于砂轮的工作位置而变化。

6. 发明授权

US08442079B2 Mode-locked semiconductor laser device and driving method thereof 有权
标题翻译：锁模半导体激光器件及其驱动方法
公开(公告)号：US08442079B2
公开(公告)日：2013-05-14
申请号：US13035540
申请日：2011-02-25
申请人： Tomoyuki Oki , Masaru Kuramoto , Masao Ikeda , Takao Miyajima , Hideki Watanabe , Hiroyuki Yokoyama
发明人： Tomoyuki Oki , Masaru Kuramoto , Masao Ikeda , Takao Miyajima , Hideki Watanabe , Hiroyuki Yokoyama
IPC分类号： H01S3/098
摘要： Provided is a driving method of a mode-locked semiconductor laser device comprising a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer having an emission region and a second compound semiconductor layer are successively laminated, a second electrode, and a first electrode. The laminated structure is formed on a compound semiconductor substrate having polarity, the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer. The well layer has a depth of 1 nm or more and 10 nm or less. The barrier layer has an impurity doping density of 2×1018 cm−3 or more and 1×1020 cm−3 or less. An optical pulse is generated in the emission region by passing a current from the second electrode to the first electrode via the laminated structure.
摘要翻译：提供了一种锁模半导体激光器件的驱动方法，其包括层叠结构，其中第一化合物半导体层，具有发射区域的第三化合物半导体层和第二化合物半导体层被连续层压，第二电极和第一电极。层叠结构形成在具有极性的化合物半导体基板上，第三化合物半导体层包括具有阱层和阻挡层的量子阱结构。阱层的深度为1nm以上且10nm以下。势垒层的杂质掺杂密度为2×1018cm-3以上且1×1020cm-3以下。通过将电流从第二电极通过层压结构传递到第一电极，在发射区域中产生光脉冲。

7. 发明授权

US08290005B2 Method of driving a laser diode 失效
公开(公告)号：US08290005B2
公开(公告)日：2012-10-16
申请号：US13212244
申请日：2011-08-18
申请人： Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
发明人： Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
IPC分类号： H01S3/13
CPC分类号： H01S5/06216 , H01S5/0428
摘要： An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.

8. 发明申请

US20120002690A1 METHOD OF DRIVING A LASER DIODE 失效
公开(公告)号：US20120002690A1
公开(公告)日：2012-01-05
申请号：US13212244
申请日：2011-08-18
申请人： Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
发明人： Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
IPC分类号： H01S3/13
CPC分类号： H01S5/06216 , H01S5/0428
摘要： An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.

9. 发明申请

US20120002271A1 SEMICONDUCTOR OPTICAL AMPLIFIER 有权
标题翻译：半导体光放大器
公开(公告)号：US20120002271A1
公开(公告)日：2012-01-05
申请号：US13166900
申请日：2011-06-23
申请人： Masaru Kuramoto , Masao Ikeda , Rintaro Koda , Tomoyuki Oki , Hideki Watanabe , Takao Miyajima , Hiroyuki Yokoyama
发明人： Masaru Kuramoto , Masao Ikeda , Rintaro Koda , Tomoyuki Oki , Hideki Watanabe , Takao Miyajima , Hiroyuki Yokoyama
IPC分类号： H01S3/00
CPC分类号： H01S5/1064 , H01S5/0425 , H01S5/0602 , H01S5/0657 , H01S5/16 , H01S5/22 , H01S5/32341 , H01S5/34333 , H01S5/50
摘要： A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively Wout, and Win, Wout>Win is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.
摘要翻译：半导体光放大器包括：依次包括由GaN化合物半导体构成的第一化合物半导体并具有第一导电类型的层压结构，具有由GaN化合物半导体构成的光放大区域的第三化合物半导体层和第二化合物半导体层由GaN化合物半导体构成并具有第二导电类型; 形成在第二化合物半导体层上的第二电极; 和与第一化合物半导体层电连接的第一电极。层叠结构具有脊形条纹结构。当光输出端面中的棱条结构的宽度和光入射端面中的脊条纹结构的宽度分别为Wout时，满足Win，Wout> Win。载体非注入区域沿着半导体光放大器的轴线从光输出端面设置在层叠结构的内部区域中。

10. 发明授权

US08008165B2 Nitride semiconductor wafer and method of processing nitride semiconductor wafer 失效
标题翻译：氮化物半导体晶片和氮化物半导体晶片的加工方法
公开(公告)号：US08008165B2
公开(公告)日：2011-08-30
申请号：US12836001
申请日：2010-07-14
申请人： Masahiro Nakayama , Naoki Matsumoto , Koshi Tamamura , Masao Ikeda
发明人： Masahiro Nakayama , Naoki Matsumoto , Koshi Tamamura , Masao Ikeda
IPC分类号： H01L21/30
CPC分类号： H01L21/02008 , B24B37/08 , H01L21/02024 , Y10S438/959
摘要： Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs.
摘要翻译：由氮化物和下衬底材料之间的失配导致的，由外延生长的氮化物膜在气相中的外来下衬衬底产生的氮化物半导体晶片具有很强的内部应力。通过在气相中在GaAs下衬底上堆叠GaN膜而消除GaAs下衬层而制成的GaN晶片由于内部应力而由于GaN和GaAs之间的晶格常数的失配而向上弯曲。

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