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1. 发明授权

US5223080A Method for controlling thickness of single crystal thin-film layer in SOI substrate 失效
标题翻译：控制SOI衬底中单晶薄膜厚度的方法
公开(公告)号：US5223080A
公开(公告)日：1993-06-29
申请号：US799182
申请日：1991-11-27
申请人： Yutaka Ohta , Masatake Katayama , Takao Abe , Yasuaki Nakazato
发明人： Yutaka Ohta , Masatake Katayama , Takao Abe , Yasuaki Nakazato
IPC分类号： H01L21/66 , C30B33/00 , G01B11/06 , H01L21/20 , H01L21/302 , H01L21/3065 , H01L21/762 , H01L21/84
CPC分类号： C30B29/06 , C30B33/00 , G01B11/0683 , H01L21/3065 , H01L21/76251 , H01L22/12 , H01L22/20
摘要： A method for controlling the thickness of a single crystal thin-film silicon layer bonded on a dielectric substrate in a SOI substrate thereby effecting conversion of said single crystal silicon layer to a thin film is disclosed. To be more precise, said method comprises selectively and hypothetically dividing the entire surface of said single crystal silicon layer destined to undergo a chemical vapor-phase corrosion reaction for the sake of said conversion into necessary minute sections and, at the sametime, taking preparatory measurement of the thickness of said single crystal silicon layer in each of said minute sections, and effecting on each of said minute sections said conversion to a thin film by a chemical vapor-phase corrosion reaction adjusted in accordance with the measured thickness of layer. The conversion to a thin film is attained with the dispersion of thickness of the single crystal silicon layer controlled with high accuracy.

2. 发明授权

US5376215A Apparatus for production of extremely thin SOI film substrate 失效
标题翻译：用于生产极薄SOI薄膜基片的设备
公开(公告)号：US5376215A
公开(公告)日：1994-12-27
申请号：US151209
申请日：1993-11-12
申请人： Yutaka Ohta , Masatake Nakano , Masatake Katayama , Takao Abe
发明人： Yutaka Ohta , Masatake Nakano , Masatake Katayama , Takao Abe
IPC分类号： H01L21/302 , G01B11/06 , H01L21/3065 , H01L21/66 , H01L21/762 , H01L27/12 , B44C1/22 , C03C15/00 , H01L21/306
CPC分类号： H01L21/76251 , G01B11/0683 , H01L21/3065 , H01L22/12 , H01L22/20
摘要： A method and apparatus for uniformizing a bonded SOI (silicon on insulator) thin film layer by the reaction of chemical vapor-phase corrosion excited by the ultraviolet light, which effect the measurement of film thickness efficiently and conveniently and consequently attaining highly accurate control of the dispersion of thickness of the thin film layer without requiring the substrate to be removed from the reaction vessel for chemical vapor-phase corrosion on each occasion of the measurement or necessitating installation of a mechanism for alteration of the position of measurement inside or outside the reaction vessel are disclosed. The measurement of film thickness is carried out by keeping observation of interference fringes due to distribution of thickness of the film layer.
摘要翻译：通过由紫外光激发的化学气相腐蚀的反应使接合的SOI（绝缘体上硅）层均匀化的方法和装置，其有效和方便地实现膜厚度的测量，从而实现对在每次测量时，不需要从用于化学气相腐蚀的反应容器中除去衬底的薄膜层的厚度分散，或者需要安装用于改变反应容器内部或外部的测量位置的机构被披露。通过保持观察由于膜层的厚度分布引起的干涉条纹来进行膜厚度的测量。

3. 发明授权

US5427052A Method and apparatus for production of extremely thin SOI film substrate 失效
标题翻译：生产极薄SOI薄膜基板的方法和装置
公开(公告)号：US5427052A
公开(公告)日：1995-06-27
申请号：US873751
申请日：1992-04-27
申请人： Yutaka Ohta , Masatake Nakano , Masatake Katayama , Takao Abe
发明人： Yutaka Ohta , Masatake Nakano , Masatake Katayama , Takao Abe
IPC分类号： H01L21/302 , G01B11/06 , H01L21/3065 , H01L21/66 , H01L21/762 , H01L27/12 , C30B25/16
CPC分类号： H01L21/76251 , G01B11/0683 , H01L21/3065 , H01L22/12 , H01L22/20
摘要： A method and apparatus for uniformizing a bonded SOI (silicon on insulator) thin film layer by the reaction of chemical vapor-phase corrosion excited by the ultraviolet light, which effect the measurement of film thickness efficiently and conveniently and consequently attaining highly accurate control of the dispersion of thickness of the thin film layer without requiring the substrate to be removed from the reaction vessel for chemical vapor-phase corrosion on each occasion of the measurement or necessitating installation of a mechanism for alteration of the position of measurement inside or outside the reaction vessel are disclosed. The measurement of film thickness is carried out by keeping observation of interference fringes due to distribution of thickness of the film layer.
摘要翻译：通过由紫外光激发的化学气相腐蚀的反应使接合的SOI（绝缘体上硅）层均匀化的方法和装置，其有效和方便地实现膜厚度的测量，从而实现对在每次测量时，不需要从用于化学气相腐蚀的反应容器中除去衬底的薄膜层的厚度分散，或者需要安装用于改变反应容器内部或外部的测量位置的机构被披露。通过保持观察由于膜层的厚度分布引起的干涉条纹来进行膜厚度的测量。

4. 发明授权

US5183783A Method for production of dielectric-separation substrate 失效
标题翻译：电介质分离基板的制造方法
公开(公告)号：US5183783A
公开(公告)日：1993-02-02
申请号：US811958
申请日：1991-12-23
申请人： Yutaka Ohta , Konomu Ohki , Masatake Katayama
发明人： Yutaka Ohta , Konomu Ohki , Masatake Katayama
IPC分类号： H01L21/762
CPC分类号： H01L21/76297 , Y10S438/928 , Y10S438/977
摘要： Single crystal silicon islands in a dielectric-separation substrate are separated completely and finished in a uniform thickness by preparatorily denuding a single crystal silicon substrate of a warpage suffered to occur therein.This dielectric-separation substrate is produced by a method which comprises forming a thermal oxide film on a single crystal silicon substrate having grooves incised in advance therein, then forming an irreversibly thermally shrinkable film on the rear surface of said single crystal silicon substrate prior to depositing a polycrystalline silicon thereon, then depositing a polycrystalline silicon on said single crystal silicon substrate, and thereafter grinding said single crystal silicon substrate in conjunction with said irreversibly thermally shrinkable film.

5. 发明授权

US5124274A Method for production of dielectric-separation substrate 失效
标题翻译：电介质分离基板的制造方法
公开(公告)号：US5124274A
公开(公告)日：1992-06-23
申请号：US791518
申请日：1991-11-14
申请人： Konomu Ohki , Yutaka Ohta , Masatake Katayama
发明人： Konomu Ohki , Yutaka Ohta , Masatake Katayama
IPC分类号： H01L21/3213 , H01L21/76 , H01L21/762 , H01L21/763
CPC分类号： H01L21/32136 , H01L21/76264 , H01L21/76297 , H01L21/763 , H01L21/76275 , H01L21/76286
摘要： After the separating grooves has been formed, the polycrystalline silicon deposited as bonded to the single crystal substrate as a supporting base, and the polycrystalline silicon layer ground and polished until the oxide film in the area other than the separating grooves is exposed, the present invention etches the polycrystalline silicon layer on the separating grooves with mixed acid composed of hydrofluoric acid and nitric acid until its thickness equals that of the separating oxide film and subsequently removes the oxide film in the area other than the separating grooves with hydrofluoric acid, As a result, the otherwise inevitable occurrence of projections of polycrystalline silicon can be precluded. When the dielectric-separation substrate obtained by the present invention is used in manufacturing a semiconductor device, therefore, the occurrence of particles due to the chipping of the projections of polycrystalline silicon and the breakage of distributed wires in the produced device can be prevented.

6. 发明授权

US5393370A Method of making a SOI film having a more uniform thickness in a SOI substrate 失效
标题翻译：在SOI衬底中制造具有更均匀厚度的SOI膜的方法
公开(公告)号：US5393370A
公开(公告)日：1995-02-28
申请号：US139849
申请日：1993-10-22
申请人： Yutaka Ohta , Masatake Katayama , Isao Moroga
发明人： Yutaka Ohta , Masatake Katayama , Isao Moroga
IPC分类号： H01L21/302 , G01B11/06 , H01L21/3065 , H01L21/66 , H01L21/762 , H01L27/12 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： G01B11/0683 , H01L21/3065 , H01L21/76251 , H01L22/12 , H01L22/20 , Y10S438/977
摘要： To provide a method of making a SOI film having a more uniform thickness in a SOI substrate which makes it possible to keep the variance at .+-.0.3 micrometers or less throughout the entire surface of the substrate, even for SOI substrates with a SOI film thickness between 1 micrometer and 10 micrometers. The surface of a SOI substrate is divided into a plurality of sections, then the SOI film thickness is measured for each section Wi (i=1-n) by means of the spectral interference method using an optical fiber cable, and, simultaneously, the SOI film is etched down to a prescribed thickness by a dry etching device, and thus a desired value and a variance (.+-.0.3 micrometers) of the SOI film thickness is obtained.
摘要翻译：为了提供在SOI衬底中制造具有更均匀厚度的SOI膜的方法，其使得可以在衬底的整个表面上将偏差保持在+/- 0.3微米或更小，即使对于具有SOI膜的SOI衬底厚度介于1微米至10微米之间。 SOI衬底的表面被分成多个部分，然后通过使用光纤电缆的光谱干涉法测量每个部分Wi（i = 1-n）的SOI膜厚度，同时，通过干蚀刻装置将SOI膜蚀刻到规定的厚度，从而获得SOI膜厚度的期望值和方差（+/- 0.3微米）。

7. 发明授权

US5336634A Dielectrically isolated substrate and a process for producing the same 失效
标题翻译：介电隔离基板及其制造方法
公开(公告)号：US5336634A
公开(公告)日：1994-08-09
申请号：US25256
申请日：1993-03-02
申请人： Masatake Katayama , Makoto Sato , Yutaka Ohta , Mitsuru Sugita , Konomu Ohki
发明人： Masatake Katayama , Makoto Sato , Yutaka Ohta , Mitsuru Sugita , Konomu Ohki
IPC分类号： H01L21/306 , H01L21/308 , H01L21/762 , H01L21/763 , H01L21/76
CPC分类号： H01L21/30608 , H01L21/3083 , H01L21/76264 , H01L21/763 , H01L21/76275 , H01L21/76286 , Y10S148/012 , Y10S148/05
摘要： A dielectrically isolated substrate is comprised of a single-crystal silicon substrate or bond substrate and a single-crystal silicon substrate or base substrate bonded together into a composite structure. The bond substrate has a (110) plane as a main crystal plane and is provided with vertically walled moats and substantially squared islands positioned adjacent to the moats. The moats and islands result from anisotropic etching using a specific mask pattern. Also disclosed is a process for producing the composite structure.
摘要翻译：介电隔离的衬底由单晶硅衬底或接合衬底和结合在一起的复合结构中的单晶硅衬底或基底衬底构成。接合衬底具有（110）面作为主晶面并且设置有垂直壁壁的护城河和邻近护城河定位的基本上平方的岛。使用特定掩模图案的各向异性蚀刻产生护城河和岛屿。还公开了一种复合结构的制造方法。

8. 发明授权

US5240883A Method of fabricating SOI substrate with uniform thin silicon film 失效
标题翻译：用均匀的薄膜制造SOI衬底的方法
公开(公告)号：US5240883A
公开(公告)日：1993-08-31
申请号：US841166
申请日：1992-02-25
申请人： Takao Abe , Masatake Katayama , Akio Kanai , Konomu Ohki , Masatake Nakano
发明人： Takao Abe , Masatake Katayama , Akio Kanai , Konomu Ohki , Masatake Nakano
IPC分类号： H01L21/02 , H01L21/20 , H01L21/304 , H01L21/3063 , H01L21/762 , H01L27/12
CPC分类号： H01L21/2007 , H01L21/3063 , H01L21/76251 , Y10S148/127 , Y10S148/135 , Y10S438/924
摘要： A thin Silicon film On Insulator (SOI) material fabricating method which is capable of providing a very high thickness uniformity of the silicon film, a process simplification and a considerable reduction of processing cost is disclosed, in which a silicon oxide film is formed on one or both of a p-type silicon bond wafer and a silicon base wafer, then the two wafers are bonded together through the silicon oxide film, subsequently a fixed positive charge is induced in the silicon oxide film to form a n-type inversion layer in the p-type silicon bond wafer adjacent to an interface between the p-type silicon bond wafer and the silicon oxide film layer, and thereafter a chemical etching is effected while applying a positive voltage to the p-type silicon bond wafer so that an etch-stop is made at an interface between a depletion layer including the n-type inversion layer and the p-type layer.

9. 发明授权

US5696034A Method for producing semiconductor substrate 失效
标题翻译：半导体衬底的制造方法
公开(公告)号：US5696034A
公开(公告)日：1997-12-09
申请号：US520189
申请日：1995-08-28
申请人： Masatake Katayama , Isao Moroga , Isao Shirai , Youichi Kumaki , Akio Kasahara
发明人： Masatake Katayama , Isao Moroga , Isao Shirai , Youichi Kumaki , Akio Kasahara
IPC分类号： H01L29/78 , H01L21/18 , H01L21/20 , H01L21/205 , H01L21/304 , H01L21/331 , H01L21/336 , H01L29/739 , H01L21/465
CPC分类号： H01L29/66333 , H01L21/187 , Y10S148/135
摘要： A method for producing a semiconductor substrate in which no autodoping occurs and slip dislocations in the substrate are reduced. The method involves forming a silicon nitride film on the backside of an n.sup.- -silicon substrate, epitaxially growing an n.sup.+ -buffer layer and a p.sup.+ -layer on the front side of the n.sup.- -silicon substrate, and decreasing the thickness of the n.sup.- -silicon substrate from the backside.
摘要翻译：不产生自动掺杂的半导体衬底的制造方法和衬底中的滑移位错减小。该方法包括在n - 硅衬底的背面上形成氮化硅膜，在n-硅衬底的正面外延生长n +缓冲层和p +层，并减小n 硅衬底从背面。

10. 发明授权

US6048793A Method and apparatus for thin film growth 失效
标题翻译：用于薄膜生长的方法和装置
公开(公告)号：US6048793A
公开(公告)日：2000-04-11
申请号：US546868
申请日：1995-10-23
申请人： Hitoshi Habuka , Masanori Mayuzumi , Naoto Tate , Masatake Katayama
发明人： Hitoshi Habuka , Masanori Mayuzumi , Naoto Tate , Masatake Katayama
IPC分类号： C23C16/24 , C23C16/02 , C23C16/44 , C23C16/455 , C23C16/48 , C30B25/10 , H01L21/205 , C23C16/01
CPC分类号： C23C16/481 , C23C16/0209 , C23C16/0236 , C23C16/4401 , C30B25/10
摘要： In a method and an appratus for a thin film growth on a semiconductor crystal substrate, impurities and contaminants absorbed on the inside wall of the reaction vessel are very harmful because these impurities and contaminants will deteriorate the quality of the thin film. A method and an apparatus by which the quantity of these impurities and contaminants absorbed on the inside wall of the reaction vessel can be restrained and removed easily are disclosed in this invention, wherein a semiconductor crystal substrate is mounted in the reaction vessel, and the wall of the reation vessel is cooled forcibly by a coolant while the substrate is under heating procedure to grow a thin film on the substrate by supplying the raw material gas into the reaction vessel. And the temperature of the wall of the reaction vessel during the procedure except the thin film growth is kept higher temperature than the temprature of the wall of the reaction vessel during the thin film growth procedure.
摘要翻译：在半导体晶体基板上的薄膜生长的方法和设备中，吸收在反应容器的内壁上的杂质和污染物是非常有害的，因为这些杂质和污染物将使薄膜的质量劣化。在本发明中公开了容易地抑制和去除反应容器的内壁上吸收的这些杂质和污染物的量的方法和装置，其中半导体晶体基板安装在反应容器中，壁的反应容器被冷却剂强制冷却，同时衬底处于加热过程中，以通过将原料气体供应到反应容器中而在衬底上生长薄膜。并且在薄膜生长过程中除了薄膜生长之外，反应容器的壁温度保持比反应容器壁温度高的温度。

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