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    • 1. 发明申请
    • METAL OR SEMICONDUCTOR MELT REFINEMENT METHOD, AND VACUUM REFINEMENT DEVICE
    • 金属或半导体熔融精炼方法和真空精炼装置
    • US20150082942A1
    • 2015-03-26
    • US14374941
    • 2012-02-06
    • Yutaka KishidaHitoshi DohnomaeJiro KondoKiyoshi GotoWataru Ohashi
    • Yutaka KishidaHitoshi DohnomaeJiro KondoKiyoshi GotoWataru Ohashi
    • F27B14/14C22B9/02B01D1/02F27B14/04F27B14/06C22B9/04F27D99/00
    • F27B14/14B01D1/02C01B33/037C22B9/02C22B9/04F27B14/04F27B14/06F27B2014/045F27D99/0006F27D2099/0008
    • An objective of the present invention is, in refining a metal or a semiconductor melt, without impairing refining efficiency, to alleviate wear and tear commensurate with unevenness in a crucible caused by instability in melt flow, and to allow safe operation over long periods of time such that leakages from the crucible do not occur. Provided is a metal or semiconductor melt refining method, in which, by using an AC resistance heating heater as a crucible heating method, the melt is heat retained and mixed by a rotating magnetic field which is generated by the resistance heating heater. The metal or semiconductor melt refinement method and a vacuum refinement device which is optimal for the refinement method are characterized in that, in order that a fluid instability does not occur in the boundary between the melt and the bottom face of the crucible when the melt is rotated by the rotating magnetic field, with a kinematic viscosity coefficient of the melt designated ν (m2/sec), the radius of the fluid surface of the melt designated R (m), and the rotational angular velocity of the melt designated Ω (rad/sec), the operation is carried out such that the value of a Reynolds number (Re) which is defined as Re=R×(Ω/ν)̂(1/2) does not exceed 600.
    • 本发明的目的是在不损害精炼效率的同时,在精炼金属或半导体熔体的同时,减轻由熔体流动不稳定引起的坩埚中的不均匀度的磨损和撕裂,并允许长时间的安全运行 从而不会发生坩埚的泄漏。 提供一种金属或半导体熔融精炼方法,其中通过使用交流电阻加热器作为坩埚加热方法,通过由电阻加热器产生的旋转磁场将熔体热保持并混合。 金属或半导体熔体精制方法和对精制方法最佳的真空精制装置的特征在于,为了在熔体与坩埚的底面之间的边界处不会发生流体不稳定性,当熔体是 通过旋转磁场旋转,熔体的运动粘度系数指定为ngr; (m2 / sec),指定为R(m)的熔体的流体表面的半径以及指定为&OHgr的熔体的旋转角速度; (rad / sec),进行操作,使得被定义为Re = R×(&OHgr; /&ngr;)(1/2)的雷诺数(Re)的值不超过600。
    • 2. 发明授权
    • Single crystal production method
    • 单晶生产方法
    • US06899759B2
    • 2005-05-31
    • US10283683
    • 2002-10-30
    • Yutaka KishidaTeruyuki TamakiSeiki TakebayashiWataru Ohashi
    • Yutaka KishidaTeruyuki TamakiSeiki TakebayashiWataru Ohashi
    • C30B29/06C30B15/00C30B15/20C30B15/30
    • C30B29/06C30B15/30Y10T117/1068Y10T117/1072
    • A single crystal production method based on the Czochralski method comprises controlling a number of crucible rotations and crystal rotations so that a number of vibrations for driving a melt, determined on the basis of the number of crucible and crystal rotations during a single crystal growing procedure, is outside a range from 95% to 105% of a number of sloshing resonance vibrations of the melt. In another embodiment, the method comprises controlling a number of rotations of a crystal and crucible, so that when a number of vibrations for driving a melt, determined by the number of crucible and crystal rotations during a single crystal growing procedure, is within a range from 95% to 105% of a number of sloshing resonance vibrations of the melt, the number of vibrations of the melt due to sloshing does not exceed 2000 times during a period when the number of vibrations is within that range.
    • 基于切克劳斯基法的单晶制造方法包括:控制多个坩埚旋转和晶体旋转,使得在单晶生长过程中,基于坩埚的数量和晶体旋转确定的用于驱动熔体的多个振动, 在熔融物的共振振动的数量的95%至105%的范围之外。 在另一个实施例中,该方法包括控制晶体和坩埚的旋转次数,使得当在单晶生长过程期间由坩埚的数量和晶体旋转确定的用于驱动熔体的多个振动在一定范围内 熔体共振振动数量的95%至105%时,在振动次数在该范围内的期间,由于晃动引起的熔体振动次数不超过2000次。