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1. 发明授权

US5585304A Method of making semiconductor device with multiple transparent layers 失效
标题翻译：制造具有多个透明层的半导体器件的方法
公开(公告)号：US5585304A
公开(公告)日：1996-12-17
申请号：US293415
申请日：1994-08-02
申请人： Yutaka Hayashi , Kunihiro Takahashi , Hiroaki Takasu , Yoshikazu Kojima , Hitoshi Niwa , Nobuyoshi Matsuyama , Yomoyuki Yoshino , Masaaki Kamiya
发明人： Yutaka Hayashi , Kunihiro Takahashi , Hiroaki Takasu , Yoshikazu Kojima , Hitoshi Niwa , Nobuyoshi Matsuyama , Yomoyuki Yoshino , Masaaki Kamiya
IPC分类号： H01L27/12 , H01L21/02 , H01L21/30 , H01L21/762 , H01L21/302
CPC分类号： H01L21/76251 , Y10S148/012 , Y10S148/135 , Y10S148/148 , Y10S438/977
摘要： A semiconductor wafer is comprised of a transparent layer interposed between a thin silicon layer and a thick silicon layer. Silicon islands are formed from the thin silicon layer on the transparent layer. Device elements are formed in the silicon islands. Thereafter, the thick silicon layer which is a support layer is etched away to form a transparent region on the wafer. The wafer is constructed to avoid elimination or destruction of the transparent layer during the course of formation of the silicon islands and during the course of etching of the rear thick silicon plate. The transparent layer is comprised of a silicon nitride film or a silicon carbide film. Alternatively, the transparent layer is comprised of a silicon oxide film covered by a silicon nitride film or a silicon carbide film on one or both of the upper and lower faces of the silicon oxide film.
摘要翻译：半导体晶片由介于薄硅层和厚硅层之间的透明层构成。硅岛由透明层上的薄硅层形成。器件元件形成在硅岛中。此后，作为支撑层的厚硅层被蚀刻掉以在晶片上形成透明区域。构造晶片以避免在形成硅岛的过程中和在后厚硅板的蚀刻过程中消除或破坏透明层。透明层由氮化硅膜或碳化硅膜构成。或者，透明层由在氧化硅膜的上表面和下表面的一个或两个上由氮化硅膜或碳化硅膜覆盖的氧化硅膜构成。

2. 发明授权

US06191476B1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06191476B1
公开(公告)日：2001-02-20
申请号：US08859571
申请日：1997-05-20
申请人： Kunihiro Takahashi , Mizuaki Suzuki , Tsuneo Yamazaki , Hiroaki Takasu , Kunio Nakajima , Atsushi Sakurai , Tadao Iwaki , Yoshikazu Kojima , Masaaki Kamiya
发明人： Kunihiro Takahashi , Mizuaki Suzuki , Tsuneo Yamazaki , Hiroaki Takasu , Kunio Nakajima , Atsushi Sakurai , Tadao Iwaki , Yoshikazu Kojima , Masaaki Kamiya
IPC分类号： H01L2310
CPC分类号： G02F1/13454 , G02F1/133512 , G02F2001/136281 , H01L23/36 , H01L23/367 , H01L27/12 , H01L27/1203 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： To provide a semiconductor substrate and a light-valve semiconductor substrate capable of preventing the threshold value of a MOS transistor on a single-crystal silicon device forming layer from increasing and forming a MOS integrated circuit with a high reliability even for a long-time operation. A semiconductor substrate and a light-valve semiconductor substrate comprising a single-crystal silicon thin-film device forming layer 5001 formed above an insulating substrate 5004 through an adhesive layer 5003 and an insulating layer 5002 formed on the single-crystal silicon thin-film device forming layer, wherein a heat conductive layers 5201 and 5202 made of a material with a high heat conductivity are arranged between the single-crystal silicon thin-film device forming layer and the adhesive layer and on the insulating layer.
摘要翻译：为了提供能够防止单晶硅器件形成层上的MOS晶体管的阈值的半导体衬底和光阀半导体衬底，即使对于长时间操作而增加并形成具有高可靠性的MOS集成电路。一种半导体衬底和一个光阀半导体衬底，它包括通过粘合剂层5003形成在绝缘衬底5004上的单晶硅薄膜器件形成层5001和形成在单晶硅薄膜器件上的绝缘层5002 形成层，其中在单晶硅薄膜器件形成层和粘合剂层之间以及绝缘层上布置由具有高导热性的材料制成的导热层5201和5202。

3. 发明授权

US5463238A CMOS structure with parasitic channel prevention 失效
标题翻译：具有寄生通道预防的CMOS结构
公开(公告)号：US5463238A
公开(公告)日：1995-10-31
申请号：US22369
申请日：1993-02-25
申请人： Kunihiro Takahashi , Masaaki Kamiya , Yoshikazu Kojima , Hiroaki Takasu
发明人： Kunihiro Takahashi , Masaaki Kamiya , Yoshikazu Kojima , Hiroaki Takasu
IPC分类号： H01L27/06 , H01L27/092 , H01L27/12 , H01L29/786 , H01L27/02 , H01L21/225 , H01L29/06
CPC分类号： H01L29/78609 , H01L27/0688 , H01L27/0921 , H01L27/0928 , H01L27/1203 , H01L29/78654
摘要： A semiconductor device comprises a complementary MOS transistor integrated circuit formed in a semiconductor single crystal silicon disposed on an electrically insulating layer. A thickness of the single crystal silicon in a region in which an N-type MOS transistor is formed is made thicker than the thickness in a region in which a P-type MOS transistor is formed. By this structure, the bottoms of the source region and the drain region of the N-type transistor are separated from the electrically insulating layer by a predetermined distance. The separation of the source region and the drain region from the electrically insulating layer is effective to prevent a parasitic channel from forming, thereby reducing leakage current and making the semiconductor device more efficient.
摘要翻译：半导体器件包括形成在设置在电绝缘层上的半导体单晶硅中的互补MOS晶体管集成电路。形成N型MOS晶体管的区域中的单晶硅的厚度比形成有P型MOS晶体管的区域的厚度厚。通过这种结构，N型晶体管的源极区域和漏极区域的底部与电绝缘层分离预定距离。源极区域和漏极区域与电绝缘层的分离对于防止形成寄生沟道是有效的，从而减少漏电流并使半导体器件更有效率。

4. 发明授权

US5759878A Method of fabricating semiconductor device having epitaxially grown semiconductor single crystal film 失效
标题翻译：制造具有外延生长的半导体单晶膜的半导体器件的方法
公开(公告)号：US5759878A
公开(公告)日：1998-06-02
申请号：US496540
申请日：1995-06-29
申请人： Yutaka Hayashi , Masaaki Kamiya , Yoshikazu Kojima , Hiroaki Takasu
发明人： Yutaka Hayashi , Masaaki Kamiya , Yoshikazu Kojima , Hiroaki Takasu
IPC分类号： G02F1/136 , G02F1/1335 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L21/86 , H01L27/12 , H01L29/78 , H01L29/786
CPC分类号： G02F1/13454 , G02F1/136209 , G02F1/1368 , H01L21/84 , H01L21/86 , H01L27/1203 , H01L27/1214 , H01L29/66772 , H01L29/78633 , H01L29/78645 , H01L29/78648 , H01L29/78654 , G02F1/133512 , G02F2001/13613 , G02F2202/105 , Y10S148/012 , Y10S148/15 , Y10S438/977
摘要： A method of fabricating a semiconductor device comprises the steps of preparing a transparent support substrate, forming a first gate electrode comprising semiconductor single crystal silicon by epitaxial growth on the transparent support substrate, forming an insulating film over the first gate electrode, forming a through-hole in the insulating film to expose a portion of the first gate electrode, laterally and epitaxially growing a semiconductor single crystal silicon thin film over the transparent substrate by epitaxial growth in the through-hole of the insulating film, forming a transistor element having a channel region formed in the semiconductor single crystal silicon thin film, and forming a second gate electrode over and electrically insulated from the channel region.
摘要翻译：制造半导体器件的方法包括以下步骤：制备透明支撑衬底，通过在透明支撑衬底上外延生长形成包含半导体单晶硅的第一栅电极，在第一栅电极上形成绝缘膜，形成通孔，在所述绝缘膜上露出以暴露所述第一栅电极的一部分，通过在所述绝缘膜的通孔中外延生长横向并外延生长所述透明基板上的半导体单晶硅薄膜，形成具有沟道的晶体管元件形成在所述半导体单晶硅薄膜中的区域，以及在所述沟道区域上形成第二栅电极并与所述沟道区域电绝缘。

5. 再颁专利

USRE36836E Semiconductor device for driving a light valve 失效
标题翻译：用于驱动光阀的半导体装置
公开(公告)号：USRE36836E
公开(公告)日：2000-08-29
申请号：US510422
申请日：1995-08-02
申请人： Yutaka Hayashi , Masaaki Kamiya , Yoshikazu Kojima , Hiroaki Takasu
发明人： Yutaka Hayashi , Masaaki Kamiya , Yoshikazu Kojima , Hiroaki Takasu
IPC分类号： G02F1/136 , G02F1/1335 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L21/86 , H01L27/12 , H01L29/78 , H01L29/786 , H01L29/04 , H01L27/01
CPC分类号： G02F1/13454 , G02F1/136209 , G02F1/1368 , H01L21/84 , H01L21/86 , H01L27/1203 , H01L27/1214 , H01L29/66772 , H01L29/78633 , H01L29/78645 , H01L29/78648 , H01L29/78654 , G02F1/133512 , G02F2001/13613 , G02F2202/105 , Y10S148/012 , Y10S148/15 , Y10S438/977
摘要： The invention provides a semi-conductor light valve device and a process for fabricating the same. The device comprises a composite substrate having a supporte substrate, a light-shielding thin film formed on said supporte substrate and semiconductive thin film disposed on the light-shielding thin film with interposing an insulating thin film. A switching element made of a transistor and a transparent electrode for driving light valve are formed on the semiconductive thin film, and the switching element and the transparent electrode are connected electrically with each other. The transistor includes a channel region in the semiconductive thin film and a main gate electrode for controlling the conduction in the channel region, and the light-shielding thin film layer is so formed as to cover the channel region on the side opposite to said channel region, so as to prevent effectively a back channel and shut off the incident light.
摘要翻译：本发明提供一种半导体光阀装置及其制造方法。该装置包括具有支撑衬底的复合衬底，在所述支撑衬底上形成的遮光薄膜和设置在遮光薄膜上并具有绝缘薄膜的半导体薄膜。在半导体薄膜上形成由晶体管构成的开关元件和用于驱动光阀的透明电极，并且开关元件和透明电极彼此电连接。晶体管包括半导体薄膜中的沟道区域和用于控制沟道区域中的导通的主栅电极，并且遮光薄膜层形成为覆盖与所述沟道区域相对的一侧上的沟道区域，以便有效地防止背部通道并且切断入射光。

6. 发明授权

US5982461A Light valve device 失效
标题翻译：光阀装置
公开(公告)号：US5982461A
公开(公告)日：1999-11-09
申请号：US834288
申请日：1992-02-14
申请人： Yutaka Hayashi , Masaaki Kamiya , Yoshikazu Kojima , Hiroaki Takasu
发明人： Yutaka Hayashi , Masaaki Kamiya , Yoshikazu Kojima , Hiroaki Takasu
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , G09G3/20 , G09G3/36 , H01L27/12 , H01L29/78 , H01L29/786
CPC分类号： G02F1/13454 , G02F1/1362 , G02F2202/105
摘要： A light valve device has a drive substrate integrated with a drive electrode. A transistor is connected to the drive electrode and a driving circuit energizes the drive electrode through the transistor. An opposed substrate is provided opposed to the drive electrode, and an electrooptical material layer is disposed between the drive substrate and the opposed substrate. The drive substrate has a structure comprising a substrate layer and a semiconductor single crystal thin film layer. The semiconductor single crystal thin film layer is made by thinning a semiconductor single crystal wafer which has been bonded to the substrate layer. The light valve device has a small size and high pixel density and can be formed using miniaturization technology. The light valve can be used for a small size, high resolution video projector and a color matrix display device.
摘要翻译： PCT No.PCT / JP91 / 00580 Sec。 371日期：1992年2月14日 102（e）日期1992年2月14日PCT 1991年4月26日PCT PCT。 WO91 / 17471 PCT出版物日期1991年11月14日光阀装置具有与驱动电极集成的驱动基板。晶体管连接到驱动电极，驱动电路通过晶体管对驱动电极通电。相对的基板与驱动电极相对设置，电光材料层设置在驱动基板和相对的基板之间。驱动基板具有包括基板层和半导体单晶薄膜层的结构。半导体单晶薄膜层通过使已结合到基底层的半导体单晶晶片变薄来制造。光阀装置具有小尺寸和高像素密度，并且可以使用小型化技术形成。光阀可用于小尺寸，高分辨率的视频投影机和彩色矩阵显示设备。

7. 发明授权

US5672518A Method of fabricating semiconductor device having stacked layered substrate 失效
标题翻译：制造具有堆叠层叠基板的半导体器件的方法
公开(公告)号：US5672518A
公开(公告)日：1997-09-30
申请号：US60163
申请日：1993-05-07
申请人： Yutaka Hayashi , Masaaki Kamiya , Yoshikazu Kojima , Hiroaki Takasu
发明人： Yutaka Hayashi , Masaaki Kamiya , Yoshikazu Kojima , Hiroaki Takasu
IPC分类号： G02F1/136 , G02F1/1335 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L21/86 , H01L27/12 , H01L29/78 , H01L29/786 , H01L21/265 , H01L31/18
CPC分类号： G02F1/13454 , G02F1/136209 , G02F1/1368 , H01L21/84 , H01L21/86 , H01L27/1203 , H01L27/1214 , H01L29/66772 , H01L29/78633 , H01L29/78645 , H01L29/78648 , H01L29/78654 , G02F1/133512 , G02F2001/13613 , G02F2202/105 , Y10S148/012 , Y10S148/15 , Y10S438/977
摘要： The invention provides a semi-conductor light valve device and a process for fabricating the same. The device comprises a composite substrate having a supporte substrate, a light-shielding thin film formed on said supporte substrate and semiconductive thin film disposed on the light-shielding thin film with interposing an insulating thin film. A switching element made of a transistor and a transparent electrode for driving light valve are formed on the semiconductive thin film, and the switching element and the transparent electrode are connected electrically with each other. The transistor includes a channel region in the semiconductive thin film and a main gate electrode for controlling the conduction in the channel region, and the light-shielding thin film layer is so formed as to cover the channel region on the side opposite to said channel region, so as to prevent effectively a back channel and shut off the incident light.
摘要翻译：本发明提供一种半导体光阀装置及其制造方法。该装置包括具有支撑衬底的复合衬底，在所述支撑衬底上形成的遮光薄膜和设置在遮光薄膜上并具有绝缘薄膜的半导体薄膜。在半导体薄膜上形成由晶体管构成的开关元件和用于驱动光阀的透明电极，并且开关元件和透明电极彼此电连接。晶体管包括半导体薄膜中的沟道区域和用于控制沟道区域中的导通的主栅电极，并且遮光薄膜层形成为覆盖与所述沟道区域相对的一侧上的沟道区域，以便有效地防止背部通道并且切断入射光。

8. 发明授权

US6040200A Method of fabricating semiconductor device having stacked-layered substrate 失效
标题翻译：制造具有层叠基板的半导体器件的方法
公开(公告)号：US6040200A
公开(公告)日：2000-03-21
申请号：US834168
申请日：1997-04-14
申请人： Yutaka Hayashi , Masaaki Kamiya , Yoshikazu Kojima , Hiroaki Takasu
发明人： Yutaka Hayashi , Masaaki Kamiya , Yoshikazu Kojima , Hiroaki Takasu
IPC分类号： G02F1/136 , G02F1/1335 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L21/86 , H01L27/12 , H01L29/78 , H01L29/786
CPC分类号： G02F1/13454 , G02F1/136209 , G02F1/1368 , H01L21/84 , H01L21/86 , H01L27/1203 , H01L27/1214 , H01L29/66772 , H01L29/78633 , H01L29/78645 , H01L29/78648 , H01L29/78654 , G02F1/133512 , G02F2001/13613 , G02F2202/105 , Y10S148/012 , Y10S148/15 , Y10S438/977
摘要： A method of fabricating a light valve device comprises forming a substrate having stacked layers including a light-shielding thin film layer, an insulating film, and a single crystalline semiconductor thin film stacked in this order on a transparent support substrate. A light-shielding layer pattern is formed by selectively etching the stacked layers. Thereafter, a switching element is formed comprised of a transistor having a channel region formed in the single crystalline semiconductor thin film and a main gate electrode covering the channel region. The channel region is provided over the light-shielding pattern layer to prevent light incident from the transparent support substrate from illuminating the channel region to suppress a photo-induced leakage current in the channel region. A transparent electrode is formed and is electrically connected to the switching element. An opposing substrate is then provided over the substrate at the side of the single crystalline semiconductor thin film, and an electro-optical material layer is interposed between the substrate and the opposing substrate.
摘要翻译：一种制造光阀装置的方法包括在透明支撑基板上依次形成具有堆叠层的衬底，该层叠层包括遮光薄膜层，绝缘膜和单晶半导体薄膜。通过选择性地蚀刻层叠层来形成遮光层图案。此后，开关元件由具有在单晶半导体薄膜中形成的沟道区的晶体管和覆盖沟道区的主栅电极构成。沟道区域设置在遮光图案层上，以防止从透明支撑衬底入射的光照射沟道区域，以抑制沟道区域中的光致感应漏电流。形成透明电极并与开关元件电连接。然后在单晶半导体薄膜侧面的衬底上设置相对的衬底，并且在衬底和相对衬底之间插入电光材料层。

9. 发明授权

US5926699A Method of fabricating semiconductor device having stacked layer substrate 失效
标题翻译：制造具有堆叠层基板的半导体器件的方法
公开(公告)号：US5926699A
公开(公告)日：1999-07-20
申请号：US89465
申请日：1998-06-02
申请人： Yutaka Hayashi , Masaaki Kamiya , Yoshikazu Kojima , Hiroaki Takasu
发明人： Yutaka Hayashi , Masaaki Kamiya , Yoshikazu Kojima , Hiroaki Takasu
IPC分类号： G02F1/136 , G02F1/1335 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L21/86 , H01L27/12 , H01L29/78 , H01L29/786
CPC分类号： G02F1/13454 , G02F1/136209 , G02F1/1368 , H01L21/84 , H01L21/86 , H01L27/1203 , H01L27/1214 , H01L29/66772 , H01L29/78633 , H01L29/78645 , H01L29/78648 , H01L29/78654 , G02F1/133512 , G02F2001/13613 , G02F2202/105 , Y10S148/012 , Y10S148/15 , Y10S438/977
摘要： A method of fabricating a semiconductor device comprises the steps of sequentially forming a first gate electrode and an insulating film over a transparent support substrate, forming a through-hole in the insulating film, forming a semiconductor single crystal silicon thin film over the transparent support substrate by epitaxial growth in the through-hole of the insulating film, forming a transistor element having a channel region formed in the semiconductor single crystal silicon thin film, and forming a second gate electrode over and electrically insulated from the channel region of the transistor element.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在透明支撑衬底上依次形成第一栅电极和绝缘膜，在绝缘膜中形成通孔，在透明支撑衬底上形成半导体单晶硅薄膜通过在绝缘膜的通孔中进行外延生长，形成具有在半导体单晶硅薄膜中形成的沟道区的晶体管元件，并且在晶体管元件的沟道区上形成第二栅电极并将其电绝缘。

10. 发明授权

US5233211A Semiconductor device for driving a light valve 失效
标题翻译：用于驱动光阀的半导体器件
公开(公告)号：US5233211A
公开(公告)日：1993-08-03
申请号：US771756
申请日：1991-10-04
申请人： Yutaka Hayashi , Masaaki Kamiya , Yoshikazu Kojima , Hiroaki Takasu
发明人： Yutaka Hayashi , Masaaki Kamiya , Yoshikazu Kojima , Hiroaki Takasu
IPC分类号： G02F1/136 , G02F1/1335 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L21/86 , H01L27/12 , H01L29/78 , H01L29/786
CPC分类号： G02F1/13454 , G02F1/136209 , G02F1/1368 , H01L21/84 , H01L21/86 , H01L27/1203 , H01L27/1214 , H01L29/66772 , H01L29/78633 , H01L29/78645 , H01L29/78648 , H01L29/78654 , G02F1/133512 , G02F2001/13613 , G02F2202/105 , Y10S148/012 , Y10S148/15 , Y10S438/977
摘要： The invention provides a semi-conductor light valve device and a process for fabricating the same. The device comprises a composite substrate having a supporte substrate, a light-shielding thin film formed on said supporte substrate and semiconductive thin film disposed on the light-shielding thin film with interposing an insulating thin film. A switching element made of a transistor and a transparent electrode for driving light valve are formed on the semiconductive thin film, and the switching element and the transparent electrode are connected electrically with each other. The transistor includes a channel region in the semiconductive thin film and a main gate electrode for controlling the conduction in the channel region, and the light-shielding thin film layer is so formed as to cover the channel region on the side opposite to said channel region, so as to prevent effectively a back channel and shut off the incident light.

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