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1. 发明授权

US08518763B2 Thin-film transistor device manufacturing method, thin-film transistor device, and display device 有权
标题翻译：薄膜晶体管器件制造方法，薄膜晶体管器件和显示器件
公开(公告)号：US08518763B2
公开(公告)日：2013-08-27
申请号：US13453158
申请日：2012-04-23
申请人： Yuta Sugawara
发明人： Yuta Sugawara
IPC分类号： H01L21/00 , H01L21/36
CPC分类号： H01L29/66765 , H01L21/268
摘要： A thin-film transistor device manufacturing method of forming a crystalline silicon film of stable crystallinity using a laser of a wavelength in a visible region is provided. The thin-film transistor device manufacturing method forms a plurality of gate electrodes above a substrate. A gate insulation layer is formed on the plurality of gate electrodes. An amorphous silicon layer is formed on the gate insulation layer. The amorphous silicon layer is crystallized using predetermined laser light to produce a crystalline silicon layer. A source electrode and a drain electrode are formed on the crystalline silicon layer in a region that corresponds to each of the plurality of gate electrodes. A film thickness of the gate insulation layer and a film thickness of the amorphous silicon layer satisfy predetermined conditional expressions.
摘要翻译：提供了使用可见光区域的波长激光形成稳定结晶性的结晶硅膜的薄膜晶体管器件的制造方法。薄膜晶体管器件制造方法在衬底上形成多个栅电极。在多个栅电极上形成栅极绝缘层。在栅绝缘层上形成非晶硅层。使用预定的激光使非晶硅层结晶，生成晶体硅层。在对应于多个栅电极中的每一个的区域中，在晶体硅层上形成源电极和漏电极。栅极绝缘层的膜厚和非晶硅层的膜厚满足预定的条件表达式。

2. 发明授权

US08679907B2 Thin-film transistor array manufacturing method, thin-film transistor array, and display device 有权
标题翻译：薄膜晶体管阵列制造方法，薄膜晶体管阵列和显示装置
公开(公告)号：US08679907B2
公开(公告)日：2014-03-25
申请号：US13438954
申请日：2012-04-04
申请人： Yuta Sugawara
发明人： Yuta Sugawara
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/66765 , H01L21/02532 , H01L21/02675 , H01L27/1281 , H01L27/1285 , H01L29/42384 , H01L29/78678
摘要： A method of manufacturing a thin-film transistor array includes: forming a gate insulating layer on gate electrodes; forming an amorphous silicon layer on the gate insulating layer; generating a crystalline silicon layer by crystallizing the amorphous silicon layer; and forming source electrodes and drain electrodes. The thicknesses of the gate insulating layer on the gate electrode is within a range in which there is a positive correlation between light absorbances of the amorphous silicon layer above the gate electrodes for the laser light and equivalent oxide thicknesses of the gate insulating layer on the gate electrodes. The thicknesses of the amorphous silicon layer above the gate electrodes is within a range in which variation of the light absorbances according to variation of the thicknesses of the amorphous silicon layer is within a predetermined range from a first standard.
摘要翻译：制造薄膜晶体管阵列的方法包括：在栅电极上形成栅极绝缘层; 在所述栅绝缘层上形成非晶硅层; 通过使非晶硅层结晶而产生晶体硅层; 以及形成源电极和漏电极。栅极电极上的栅极绝缘层的厚度在激光的栅电极上方的非晶硅层的光吸收与栅极上的栅极绝缘层的等效氧化物厚度之间存在正相关的范围内电极。栅电极上方的非晶硅层的厚度在根据第一标准的预定范围内，根据非晶硅层的厚度变化而发生的光吸收变化的范围。

3. 发明授权

US08884296B2 Thin-film transistor device manufacturing method, thin-film transistor device, and display device 有权
标题翻译：薄膜晶体管器件制造方法，薄膜晶体管器件和显示器件
公开(公告)号：US08884296B2
公开(公告)日：2014-11-11
申请号：US13338816
申请日：2011-12-28
申请人： Yuta Sugawara
发明人： Yuta Sugawara
IPC分类号： H01L29/10 , H01L29/786 , H01L29/66 , H01L27/12 , H01L21/02
CPC分类号： H01L29/66765 , H01L21/02532 , H01L21/02675 , H01L21/02691 , H01L27/1285 , H01L29/78678
摘要： A thin-film transistor device manufacturing method for forming a crystalline silicon film of stable crystallinity using a visible wavelength laser includes: a process of forming a plurality of gate electrodes above a substrate; a process of forming a silicon nitride layer on the plurality of gate electrodes; a process of forming a silicon oxide layer on the silicon nitride layer; a process of forming an amorphous silicon layer on the silicon oxide layer; a process of crystallizing the amorphous silicon layer using predetermined laser light to produce a crystalline silicon layer; and a process of forming a source electrode and a drain electrode on the crystalline silicon layer in a region that corresponds to each of the plurality of gate electrodes. A film thickness of the silicon oxide layer, a film thickness of the silicon nitride layer, and a film thickness of the amorphous silicon layer satisfy predetermined conditional expressions.
摘要翻译：使用可见波长激光器形成具有稳定结晶度的晶体硅膜的薄膜晶体管器件制造方法包括：在衬底上形成多个栅电极的工艺; 在所述多个栅电极上形成氮化硅层的工序; 在氮化硅层上形成氧化硅层的工序; 在氧化硅层上形成非晶硅层的工艺; 使用预定的激光使非晶硅层结晶以产生晶体硅层的工艺; 以及在与所述多个栅电极中的每一个对应的区域中在所述晶体硅层上形成源电极和漏极的工艺。氧化硅层的膜厚，氮化硅层的膜厚以及非晶硅层的膜厚满足规定的条件式。

4. 发明授权

US08865529B2 Thin-film transistor device manufacturing method, thin-film transistor device, and display device 有权
标题翻译：薄膜晶体管器件制造方法，薄膜晶体管器件和显示器件
公开(公告)号：US08865529B2
公开(公告)日：2014-10-21
申请号：US13495149
申请日：2012-06-13
申请人： Yuta Sugawara
发明人： Yuta Sugawara
IPC分类号： H01L21/00 , H01L21/84 , H01L21/331 , H01L29/04 , H01L29/66 , H01L21/02 , H01L29/786 , H01L27/12
CPC分类号： H01L29/6675 , H01L21/02532 , H01L21/02675 , H01L27/1281 , H01L27/1285 , H01L29/04 , H01L29/78696
摘要： A thin-film transistor device manufacturing method and others according to the present disclosure includes: forming a plurality of gate electrodes above a substrate; forming a gate insulating layer on the plurality of gate electrodes; forming an amorphous silicon layer on the gate insulating layer; forming a buffer layer and a light absorbing layer above the amorphous silicon layer; forming a crystalline silicon layer by crystallizing the amorphous silicon layer with heat generated by heating the light absorbing layer using a red or near infrared laser beam; and forming a source electrode and a drain electrode on the crystalline silicon layer in a region that corresponds to each of the plurality of gate electrodes, and film thicknesses of the gate insulating layer, the amorphous silicon layer, the buffer layer, and the light absorbing layer satisfy predetermined expressions.
摘要翻译：根据本公开的薄膜晶体管器件制造方法和其它方法包括：在衬底上形成多个栅电极; 在所述多个栅电极上形成栅极绝缘层; 在所述栅绝缘层上形成非晶硅层; 在所述非晶硅层之上形成缓冲层和光吸收层; 通过使用红色或近红外激光束加热光吸收层而产生的热量使非晶硅层结晶而形成晶体硅层; 以及在与所述多个栅电极中的每一个对应的区域中的所述晶体硅层上形成源电极和漏电极，以及所述栅极绝缘层，所述非晶硅层，所述缓冲层和所述光吸收的膜厚度层满足预定表达式。

5. 发明授权

US08530900B2 Method for selectively forming crystalline silicon layer regions above gate electrodes 有权
标题翻译：选择性地形成栅电极之上的晶体硅层区的方法
公开(公告)号：US08530900B2
公开(公告)日：2013-09-10
申请号：US13495387
申请日：2012-06-13
申请人： Mitsutaka Matsumoto , Yuta Sugawara
发明人： Mitsutaka Matsumoto , Yuta Sugawara
IPC分类号： H01L21/8234 , H01L27/088
CPC分类号： H01L21/02532 , H01L21/02675 , H01L27/1281 , H01L27/1285
摘要： Preparing a substrate; forming a plurality of gate electrodes above the substrate; forming a gate insulating layer above the gate electrodes; forming an amorphous silicon layer above the gate insulating layer; forming crystalline silicon layer regions by irradiating the amorphous silicon layer in regions above the gate electrodes with a laser beam having a wavelength from 473 nm to 561 nm so as to crystallize the amorphous silicon layer in the regions above the gate electrodes, and forming an amorphous silicon layer region in a region other than the regions above the gate electrodes; and forming source electrodes and drain electrodes above the crystalline silicon layer regions are included, and a thickness of the gate insulating layer and a thickness of the amorphous silicon layer satisfy predetermined expressions.
摘要翻译：制备底物; 在所述衬底上形成多个栅电极; 在栅电极上方形成栅极绝缘层; 在所述栅绝缘层上方形成非晶硅层; 通过用波长从473nm到561nm的激光束照射栅电极上方的区域中的非晶硅层，以便在栅电极上方的区域中的非晶硅层结晶，形成晶体硅层区域，在除栅电极上方的区域以外的区域中的硅层区域; 并且包括在晶体硅层区域上方形成源电极和漏电极，并且栅极绝缘层的厚度和非晶硅层的厚度满足预定的表达式。

6. 发明授权

US08778746B2 Thin-film transistor device manufacturing method, thin-film transistor, and display device 失效
标题翻译：薄膜晶体管器件制造方法，薄膜晶体管和显示器件
公开(公告)号：US08778746B2
公开(公告)日：2014-07-15
申请号：US13455375
申请日：2012-04-25
申请人： Yuta Sugawara
发明人： Yuta Sugawara
IPC分类号： H01L21/00 , H01L21/36
CPC分类号： H01L29/78696 , H01L21/268 , H01L29/4908 , H01L29/66765
摘要： A thin-film transistor device manufacturing method forms a plurality of gate electrodes above a substrate. A silicon nitride layer is formed on the plurality of gate electrodes. A silicon oxide layer is formed on the silicon nitride layer. An amorphous silicon layer is formed on the silicon oxide layer. The amorphous silicon layer is crystallized using predetermined laser light to produce a crystalline silicon layer. A source electrode and a drain electrode are formed on the crystalline silicon layer in a region that corresponds to each of the plurality of gate electrodes. A film thickness of the silicon oxide layer, a film thickness of the silicon nitride layer, and a film thickness of the amorphous silicon layer satisfy predetermined conditional expressions.
摘要翻译：薄膜晶体管器件制造方法在衬底上形成多个栅电极。在多个栅电极上形成氮化硅层。在氮化硅层上形成氧化硅层。在氧化硅层上形成非晶硅层。使用预定的激光使非晶硅层结晶，生成晶体硅层。在对应于多个栅电极中的每一个的区域中，在晶体硅层上形成源电极和漏电极。氧化硅层的膜厚，氮化硅层的膜厚以及非晶硅层的膜厚满足规定的条件式。

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