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1. 发明申请

US20110158277A1 GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND EPITAXIAL SUBSTRATE 审中-公开
标题翻译： III族氮化物半导体激光器件，制备III族氮化物半导体激光器器件的方法和外延衬底
公开(公告)号：US20110158277A1
公开(公告)日：2011-06-30
申请号：US12837847
申请日：2010-07-16
申请人： Yusuke YOSHIZUMI , Yohei ENYA , Takashi KYONO , Takamichi SUMITOMO , Nobuhiro SAGA , Masahiro ADACHI , Kazuhide SUMIYOSHI , Shinji TOKUYAMA , Shimpei TAKAGI , Takatoshi IKEGAMI , Masaki UENO , Koji KATAYAMA
发明人： Yusuke YOSHIZUMI , Yohei ENYA , Takashi KYONO , Takamichi SUMITOMO , Nobuhiro SAGA , Masahiro ADACHI , Kazuhide SUMIYOSHI , Shinji TOKUYAMA , Shimpei TAKAGI , Takatoshi IKEGAMI , Masaki UENO , Koji KATAYAMA
IPC分类号： H01S5/343 , H01L21/304 , H01L33/06
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/0207 , H01S5/2201 , H01S5/3202
摘要： A III-nitride semiconductor laser device is provided with a laser structure and an electrode. The laser structure includes a support base which comprises a hexagonal III-nitride semiconductor and has a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface. The electrode is provided on the semiconductor region. The semiconductor region includes a first cladding layer of a first conductivity type GaN-based semiconductor, a second cladding layer of a second conductivity type GaN-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer. The laser structure includes first and second fractured faces intersecting with an m-n plane defined by the m-axis of the hexagonal III-nitride semiconductor and an axis normal to the semipolar primary surface. A laser cavity of the III-nitride semiconductor laser device includes the first and second fractured faces. An angle ALPHA between the normal axis and the c-axis of the hexagonal III-nitride semiconductor is in the range of not less than 45 degrees and not more than 80 degrees or in the range of not less than 100 degrees and not more than 135 degrees. The laser structure includes a laser waveguide extending above the semipolar primary surface, and the laser waveguide extends in a direction of a waveguide vector directed from one to another of the first and second fractured faces. A c-axis vector indicating a direction of the c-axis of the hexagonal III-nitride semiconductor includes a projected component parallel to the semipolar primary surface and a vertical component parallel to the normal axis. An angle difference between the waveguide vector and the projected component is in the range of not less than −0.5 degrees and not more than +0.5 degrees.
摘要翻译： III族氮化物半导体激光器件具有激光结构和电极。激光器结构包括支撑基底，其包括六边形III族氮化物半导体并且具有半极性主表面，以及设置在半极性主表面上的半导体区域。电极设置在半导体区域上。半导体区域包括第一导电型GaN基半导体的第一包层，第二导电型GaN基半导体的第二包层和设置在第一包层和第二包层之间的有源层。激光结构包括与由六边形III族氮化物半导体的m轴和垂直于半极性主表面的轴定义的m-n平面相交的第一和第二断裂面。 III族氮化物半导体激光器件的激光腔包括第一和第二断裂面。六边形III族氮化物半导体的法线和c轴之间的角度ALPHA在不小于45度且不超过80度的范围内或在不小于100度且不超过135度的范围内度。激光器结构包括在半极性主表面上方延伸的激光波导，并且激光波导沿着从第一和第二断裂面的一个引导到另一个的波导矢量的方向延伸。指示六边形III族氮化物半导体的c轴方向的c轴向量包括平行于半极性主表面的投影分量和平行于法线轴的垂直分量。波导矢量和投射分量之间的角度差在不小于-0.5度且不超过+0.5度的范围内。

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