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1. 发明授权

US08481247B2 Resist underlayer film forming composition containing liquid additive 有权
标题翻译：含有液体添加剂的抗蚀剂下层膜成膜组合物
公开(公告)号：US08481247B2
公开(公告)日：2013-07-09
申请号：US12310328
申请日：2007-08-20
申请人： Yusuke Horiguchi , Tetsuya Shinjo , Satoshi Takei
发明人： Yusuke Horiguchi , Tetsuya Shinjo , Satoshi Takei
IPC分类号： G03F7/11 , G03F7/20 , G03F7/004 , C08L71/00 , C09D5/32 , H01L21/027
CPC分类号： H01L21/31144 , G03F7/091 , H01L21/0271
摘要： To provide a resist underlayer film forming composition for lithography that is used in a lithography process for production of a semiconductor device. There is provided a resist underlayer film forming composition used in a lithography process for production of a semiconductor device, comprising a resin (A), a liquid additive (B) and a solvent (C). The liquid additive (B) may be an aliphatic polyether compound. The liquid additive (B) may be a polyether polyol, polyglycidyl ether or a combination thereof. Further, there is provided a method of manufacturing a semiconductor device, including the steps of forming a resist underlayer film by applying the resist underlayer film forming composition on a semiconductor substrate and by calcining the composition; forming a photoresist layer on the underlayer film; exposing the semiconductor substrate coated with the resist underlayer film and the photoresist layer to light; and developing the photoresist layer after the exposure to light.
摘要翻译：提供用于制造半导体器件的光刻工艺中的用于光刻的抗蚀剂下层膜成膜组合物。提供了用于生产半导体器件的光刻工艺中的抗蚀剂下层膜形成组合物，其包含树脂（A），液体添加剂（B）和溶剂（C）。液体添加剂（B）可以是脂肪族聚醚化合物。液体添加剂（B）可以是聚醚多元醇，聚缩水甘油醚或其组合。此外，提供了一种制造半导体器件的方法，包括以下步骤：通过将抗蚀剂下层膜形成组合物施加到半导体衬底上并通过煅烧该组合物来形成抗蚀剂下层膜; 在下层膜上形成光致抗蚀剂层; 将涂覆有抗蚀剂下层膜和光致抗蚀剂层的半导体基板曝光; 并在曝光后显影光致抗蚀剂层。

2. 发明申请

US20090311624A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING LIQUID ADDITIVE 有权
标题翻译：含有液体添加剂的耐下层膜成膜组合物
公开(公告)号：US20090311624A1
公开(公告)日：2009-12-17
申请号：US12310328
申请日：2007-08-20
申请人： Yusuke Horiguchi , Tetsuya Shinjo , Satoshi Takei
发明人： Yusuke Horiguchi , Tetsuya Shinjo , Satoshi Takei
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： H01L21/31144 , G03F7/091 , H01L21/0271
摘要： To provide a resist underlayer film forming composition for lithography that is used in a lithography process for production of a semiconductor device. There is provided a resist underlayer film forming composition used in a lithography process for production of a semiconductor device, comprising a resin (A), a liquid additive (B) and a solvent (C). The liquid additive (B) may be an aliphatic polyether compound. The liquid additive (B) may be a polyether polyol, polyglycidyl ether or a combination thereof. Further, there is provided a method of manufacturing a semiconductor device, including the steps of forming a resist underlayer film by applying the resist underlayer film forming composition on a semiconductor substrate and by calcining the composition; forming a photoresist layer on the underlayer film; exposing the semiconductor substrate coated with the resist underlayer film and the photoresist layer to light; and developing the photoresist layer after the exposure to light.
摘要翻译：提供用于制造半导体器件的光刻工艺中的用于光刻的抗蚀剂下层膜成膜组合物。提供了用于生产半导体器件的光刻工艺中的抗蚀剂下层膜形成组合物，其包含树脂（A），液体添加剂（B）和溶剂（C）。液体添加剂（B）可以是脂肪族聚醚化合物。液体添加剂（B）可以是聚醚多元醇，聚缩水甘油醚或其组合。此外，提供了一种制造半导体器件的方法，包括以下步骤：通过将抗蚀剂下层膜形成组合物施加到半导体衬底上并通过煅烧该组合物来形成抗蚀剂下层膜; 在下层膜上形成光致抗蚀剂层; 将涂覆有抗蚀剂下层膜和光致抗蚀剂层的半导体基板曝光; 并在曝光后显影光致抗蚀剂层。

3. 发明授权

US08227172B2 Method of producing semiconductor device using resist underlayer film by photo-crosslinking curing 有权
标题翻译：通过光交联固化制备使用抗蚀剂下层膜的半导体器件的方法
公开(公告)号：US08227172B2
公开(公告)日：2012-07-24
申请号：US12311745
申请日：2007-10-10
申请人： Yusuke Horiguchi , Satoshi Takei , Tetsuya Shinjo
发明人： Yusuke Horiguchi , Satoshi Takei , Tetsuya Shinjo
IPC分类号： G03F7/00 , G03F7/004 , G03F7/11 , G03F7/26 , G03F7/40
CPC分类号： G03F7/09 , G03F7/091 , Y10S430/114 , Y10S430/128
摘要： There is provided a resist underlayer film forming composition used in a lithography process for producing semiconductor devices. A method of producing a semiconductor device comprising: forming a coating film by applying a resist underlayer film forming composition containing a polymer, a crosslinker and a photoacid generator on a semiconductor substrate; forming an underlayer film by irradiating light to the coating film; and forming a photoresist by applying a photoresist composition on the underlayer film and heating the resultant layer. The polymer polymer is a polymer having a benzene ring or a hetero ring in a main chain or a side chain bonded to the main chain, and the content rate of a benzene ring in the polymer is 30 to 70% by mass. The polymer may be a polymer containing a lactone structure.
摘要翻译：提供了用于制造半导体器件的光刻工艺中使用的抗蚀剂下层膜形成组合物。一种制造半导体器件的方法，包括：通过在半导体衬底上涂覆含有聚合物，交联剂和光致酸发生剂的抗蚀剂下层膜形成组合物，形成涂膜; 通过向涂膜照射光而形成下层膜; 以及通过在下层膜上施加光致抗蚀剂组合物并加热所得层而形成光致抗蚀剂。聚合物聚合物是在与主链结合的主链或侧链中具有苯环或杂环的聚合物，聚合物中苯环的含有率为30〜70质量％。聚合物可以是含有内酯结构的聚合物。

4. 发明申请

US20100022092A1 Method of producing semiconductor device using resist underlayer film by photo-crosslinking curing 有权
标题翻译：通过光交联固化制备使用抗蚀剂下层膜的半导体器件的方法
公开(公告)号：US20100022092A1
公开(公告)日：2010-01-28
申请号：US12311745
申请日：2007-10-10
申请人： Yusuke Horiguchi , Satoshi Takei , Tetsuya Shinjo
发明人： Yusuke Horiguchi , Satoshi Takei , Tetsuya Shinjo
IPC分类号： H01L21/308
CPC分类号： G03F7/09 , G03F7/091 , Y10S430/114 , Y10S430/128
摘要： There is provided a resist underlayer film forming composition used in a lithography process for producing semiconductor devices. A method of producing a semiconductor device comprising: forming a coating film by applying a resist underlayer film forming composition containing a polymer, a crosslinker and a photoacid generator on a semiconductor substrate; forming an underlayer film by irradiating light to the coating film; and forming a photoresist by applying a photoresist composition on the underlayer film and heating the resultant layer. The polymer polymer is a polymer having a benzene ring or a hetero ring in a main chain or a side chain bonded to the main chain, and the content rate of a benzene ring in the polymer is 30 to 70% by mass. The polymer may be a polymer containing a lactone structure.
摘要翻译：提供了用于制造半导体器件的光刻工艺中使用的抗蚀剂下层膜形成组合物。一种制造半导体器件的方法，包括：通过在半导体衬底上涂覆含有聚合物，交联剂和光致酸发生剂的抗蚀剂下层膜形成组合物，形成涂膜; 通过向涂膜照射光而形成下层膜; 以及通过在下层膜上施加光致抗蚀剂组合物并加热所得层而形成光致抗蚀剂。聚合物聚合物是在与主链结合的主链或侧链中具有苯环或杂环的聚合物，聚合物中苯环的含有率为30〜70质量％。聚合物可以是含有内酯结构的聚合物。

5. 发明授权

US07687223B2 Underlayer coating forming composition for lithography containing cyclodextrin compound 有权
标题翻译：用于含环糊精化合物的光刻用底层涂料组合物
公开(公告)号：US07687223B2
公开(公告)日：2010-03-30
申请号：US11666342
申请日：2005-10-25
申请人： Satoshi Takei , Tetsuya Shinjo , Keisuke Hashimoto
发明人： Satoshi Takei , Tetsuya Shinjo , Keisuke Hashimoto
IPC分类号： G03C1/825 , G03F7/09 , G03F7/20 , G03F7/30
CPC分类号： G03F7/091 , G03F7/094 , G03F7/11 , H01L21/0276 , H01L21/31144 , H01L21/312 , H01L21/76808 , Y10S430/111 , Y10S430/115
摘要： There is provided an underlayer coating forming composition for lithography for forming an underlayer coating having a high dry etching rate compared with photoresist, causing no intermixing with the photoresist, and excellent in property of filling hole on the semiconductor substrate, which is used in lithography process of manufacture of semiconductor device. The composition comprises a cyclodextrin compound that 10% to 90% of total number of hydroxy groups in cyclodextrin is converted into an ether or ester group, a crosslinking compound, a crosslinking catalyst and a solvent.
摘要翻译：提供了一种用于光刻的底层涂层形成组合物，用于形成与光致抗蚀剂相比具有高干蚀刻速率的下层涂层，不会与光致抗蚀剂混合，并且在光刻工艺中使用的半导体衬底上的填充孔性质优异的半导体器件的制造。该组合物包含环糊精中羟基总数的10〜90％转化为醚或酯基的环糊精化合物，交联化合物，交联催化剂和溶剂。

6. 发明授权

US07226721B2 Underlayer coating forming composition for lithography containing compound having protected carboxyl group 有权
标题翻译：含有保护羧基的化合物的光刻用底层涂料组合物
公开(公告)号：US07226721B2
公开(公告)日：2007-06-05
申请号：US10565968
申请日：2004-07-30
申请人： Satoshi Takei , Takahiro Kishioka , Yasushi Sakaida , Tetsuya Shinjo
发明人： Satoshi Takei , Takahiro Kishioka , Yasushi Sakaida , Tetsuya Shinjo
IPC分类号： G03F7/11 , G03C5/00
CPC分类号： G03F7/091 , Y10S430/106
摘要： There is provided an underlayer coating forming composition for lithography, and an underlayer coating having a high dry etching rate compared with photoresist, and causing no intermixing with the photoresist, which are used in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition comprising a compound having a protected carboxyl group, a compound having a group capable of reacting with a carboxyl group and a solvent, and an underlayer coating forming composition comprising a compound having a group capable of reacting with a carboxyl group and a protected carboxyl group and a solvent.
摘要翻译：提供了一种用于光刻的底层涂层形成组合物和与光致抗蚀剂相比具有高干蚀刻速率的下层涂层，并且不与用于制造半导体器件的光刻工艺中的光致抗蚀剂混合。具体地说，它是一种下层涂层形成组合物，它包括具有被保护的羧基的化合物，具有与羧基反应的基团的化合物和一种溶剂，以及一种下层涂层形成组合物，该组合物包含具有能够与羧基和保护的羧基和溶剂。

7. 发明授权

US10509320B2 Underlying coating forming composition for lithography containing compound having protected carboxyl group 有权
公开(公告)号：US10509320B2
公开(公告)日：2019-12-17
申请号：US11795520
申请日：2006-01-06
申请人： Satoshi Takei , Tetsuya Shinjo , Keisuke Hashimoto , Yasushi Sakaida
发明人： Satoshi Takei , Tetsuya Shinjo , Keisuke Hashimoto , Yasushi Sakaida
IPC分类号： G03F7/09 , G03F7/26 , G03F7/30
摘要： There is provided an underlayer coating forming composition for lithography that is used in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to photoresists, does not intermix with photoresists, and is capable of flattening the surface of a semi conductor substrate having holes of a high aspect ratio.The underlayer coating forming composition for lithography comprises, a compound having two or more protected carboxylic groups, a compound having two or more epoxy groups, and a solvent.

8. 发明申请

US20080102649A1 Underlayer Coating Forming Composition For Lythography Containing Compound Having Protected Carboxyl Group 审中-公开
标题翻译：含有保护性羧基的化合物的底图涂层组合物
公开(公告)号：US20080102649A1
公开(公告)日：2008-05-01
申请号：US11795520
申请日：2006-01-06
申请人： Satoshi Takei , Tetsuya Shinjo , Keisuke Hashimoto , Yasushi Sakaida
发明人： Satoshi Takei , Tetsuya Shinjo , Keisuke Hashimoto , Yasushi Sakaida
IPC分类号： H01L21/31 , C09D4/00
摘要： There is provided an underlayer coating forming composition for lithography that is used in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to photoresists, does not intermix with photoresists, and is capable of flattening the surface of a semi conductor substrate having holes of a high aspect ratio.The underlayer coating forming composition for lithography comprises, a compound having two or more protected carboxylic groups, a compound having two or more epoxy groups, and a solvent.
摘要翻译：提供了用于光刻的底层涂层形成组合物，其用于制造半导体器件的光刻工艺中，并且与光致抗蚀剂相比具有高的干蚀刻速率，不与光致抗蚀剂混合，并且能够使具有高纵横比的孔的半导体衬底。用于光刻的下层涂层形成组合物包括具有两个或更多个保护的羧基的化合物，具有两个或更多个环氧基的化合物和溶剂。

9. 发明授权

US08426111B2 Resist underlayer coating forming composition for forming photo-crosslinking cured resist underlayer coating 有权
标题翻译：用于形成光交联固化抗蚀剂下层涂层的抗蚀剂下层涂料形成组合物
公开(公告)号：US08426111B2
公开(公告)日：2013-04-23
申请号：US11918135
申请日：2006-04-11
申请人： Satoshi Takei , Tetsuya Shinjo , Motohiko Hidaka
发明人： Satoshi Takei , Tetsuya Shinjo , Motohiko Hidaka
IPC分类号： G03F7/11 , G03F7/20 , G03F7/004
CPC分类号： G03F7/091 , G03F7/11 , G03F7/161 , H01L21/0271
摘要： There is provided an underlayer coating that is used as an underlayer of photoresists in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to the photoresists, does not intermix with the photoresists, and is capable of flattening the surface of a semiconductor substrate having holes of a high aspect ratio; and an underlayer coating forming composition for forming the underlayer coating.The underlayer coating forming composition for forming by light irradiation an underlayer coating used as an underlayer of a photoresist in a lithography process of the manufacture of semiconductor devices, comprises a polymerizable substance and a photopolymerization initiator.
摘要翻译：提供了在半导体器件的制造的光刻工艺中用作光致抗蚀剂的底层的底层涂层，并且与光致抗蚀剂相比具有高的干蚀刻速率，不与光致抗蚀剂混合，并且能够使具有高纵横比的孔的半导体衬底的表面; 以及用于形成下层涂层的下层涂层形成组合物。在制造半导体器件的光刻工艺中，通过光照射形成用于光致抗蚀剂的底层的底层涂层组合物包含可聚合物质和光聚合引发剂。

10. 发明申请

US20090130594A1 Resist Underlayer Coating Forming Composition for Forming Photo-Crosslinking Cured Resist Underlayer Coating 有权
标题翻译：用于形成光交联固化抗蚀剂底层涂层的抗蚀剂底层涂料组合物
公开(公告)号：US20090130594A1
公开(公告)日：2009-05-21
申请号：US11918135
申请日：2006-04-11
申请人： Satoshi Takei , Tetsuya Shinjo , Motohiko Hidaka
发明人： Satoshi Takei , Tetsuya Shinjo , Motohiko Hidaka
IPC分类号： G03F7/20 , G03F7/004 , B05D3/06 , B32B37/02
CPC分类号： G03F7/091 , G03F7/11 , G03F7/161 , H01L21/0271
摘要： There is provided an underlayer coating that is used as an underlayer of photoresists in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to the photoresists, does not intermix with the photoresists, and is capable of flattening the surface of a semiconductor substrate having holes of a high aspect ratio; and an underlayer coating forming composition for forming the underlayer coating.The underlayer coating forming composition for forming by light irradiation an underlayer coating used as an underlayer of a photoresist in a lithography process of the manufacture of semiconductor devices, comprises a polymerizable substance and a photopolymerization initiator.
摘要翻译：提供了在半导体器件的制造的光刻工艺中用作光致抗蚀剂的底层的底层涂层，并且与光致抗蚀剂相比具有高的干蚀刻速率，不与光致抗蚀剂混合，并且能够使具有高纵横比的孔的半导体衬底的表面; 以及用于形成下层涂层的下层涂层形成组合物。在制造半导体器件的光刻工艺中，通过光照射形成用于光致抗蚀剂的底层的底层涂层组合物包含可聚合物质和光聚合引发剂。

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