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1. 发明申请

US20050173069A1 Plasma generating apparatus and plasma processing apparatus 审中-公开
标题翻译：等离子体发生装置和等离子体处理装置
公开(公告)号：US20050173069A1
公开(公告)日：2005-08-11
申请号：US10931132
申请日：2004-09-01
申请人： Yuri Tolmachev , Dong-joon Ma , Dae-il Kim , Sergiy Navala
发明人： Yuri Tolmachev , Dong-joon Ma , Dae-il Kim , Sergiy Navala
IPC分类号： H05H1/46 , C23C16/511 , C23F1/00 , H01J37/32 , H01L21/02 , H05H1/30
CPC分类号： H01J37/32247 , H01J37/32192
摘要： Provided is a microwave plasma generating apparatus using a multiple open-ended cavity resonator, and a plasma processing apparatus including the microwave plasma generating apparatus. The plasma processing apparatus includes a container for forming a process chamber, a support unit that supports a material to be processed in the process chamber, a dielectric window formed on an upper part of the process chamber, a gas supply unit that inject a process gas into the process chamber, and a microwave supply unit that includes a plurality of resonators for supplying microwaves through the dielectric window.
摘要翻译：提供了一种使用多开口腔谐振器的微波等离子体产生装置和包括微波等离子体产生装置的等离子体处理装置。等离子体处理装置包括用于形成处理室的容器，在处理室中支撑待处理材料的支撑单元，形成在处理室的上部的电介质窗口，注入处理气体的气体供给单元以及包括用于通过电介质窗提供微波的多个谐振器的微波提供单元。

2. 发明申请

US20050103623A1 Ionized physical vapor deposition apparatus using helical self-resonant coil 有权
标题翻译：电离物理气相沉积装置采用螺旋自谐振线圈
公开(公告)号：US20050103623A1
公开(公告)日：2005-05-19
申请号：US10932076
申请日：2004-09-02
申请人： Yuri Tolmachev , Dong-joon Ma , Sergiy Navala , Dae-il Kim
发明人： Yuri Tolmachev , Dong-joon Ma , Sergiy Navala , Dae-il Kim
IPC分类号： H01L21/203 , C23C14/35 , C23C14/44 , H01J37/32 , H01J37/34 , C23C14/34
CPC分类号： H01J37/321 , C23C14/358 , H01J37/3408
摘要： Provided is an ionized physical vapor deposition (IPVD) apparatus having a helical self-resonant coil. The IPVD apparatus comprises a process chamber having a substrate holder that supports a substrate to be processed, a deposition material source that supplies a material to be deposited on the substrate into the process chamber, facing the substrate holder, a gas injection unit to inject a process gas into the process chamber, a bias power source that applies a bias potential to the substrate holder, a helical self-resonant coil that produces plasma for ionization of the deposition material in the process chamber, one end of the helical self-resonant coil being grounded and the other end being electrically open, and an RF generator to supply an RF power to the helical self-resonant coil. The use of a helical self-resonant coil enables the IPVD apparatus to ignite and operate at very low chamber pressure such as approximately 0.1 mtorr, and to produce high density plasma with high efficiency compared to a conventional IPVD apparatus. Accordingly, a high efficiency of ionization of deposition material is achieved.
摘要翻译：提供了一种具有螺旋自谐振线圈的电离物理气相沉积（IPVD）装置。 IPVD装置包括具有支撑待处理基板的基板保持器的处理室，将要沉积在基板上的材料供给到面向基板保持器的处理室中的沉积材料源，注入单元将处理气体进入处理室，向衬底保持器施加偏置电位的偏压电源，产生用于离子化处理室中的沉积材料的等离子体的螺旋自谐振线圈，螺旋自谐振线圈的一端接地并且另一端电气打开，以及RF发生器，用于向螺旋自谐振线圈提供RF功率。螺旋自谐振线圈的使用使得IPVD装置能够在非常低的室压力（例如约0.1mtorr）下点燃和操作，并且与传统的IPVD装置相比，可以高效率地产生高密度等离子体。因此，实现了沉积材料的高效离子化。

3. 发明申请

US20050093460A1 Helical resonator type plasma processing apparatus 审中-公开
标题翻译：螺旋谐振器型等离子体处理装置
公开(公告)号：US20050093460A1
公开(公告)日：2005-05-05
申请号：US10978391
申请日：2004-11-02
申请人： Dae-il Kim , Dong-joon Ma , Gook-yoon Kim , Sung-kyu Choi
发明人： Dae-il Kim , Dong-joon Ma , Gook-yoon Kim , Sung-kyu Choi
IPC分类号： H05H1/46 , H01J7/24 , H01J37/32 , H01L21/00 , H01L21/205 , H01L21/3065 , H05H1/00
CPC分类号： H01J37/32697 , H01J37/321 , H01J37/3211
摘要： Provided is helical resonator plasma processing apparatus. The plasma processing apparatus comprises a process chamber having a substrate holder for supporting a substrate, a dielectric tube disposed on the process chamber to communicate with the process chamber, a helix coil wounded around the dielectric tube, and an RF power source to supply RF power to the helix coil. The dielectric tube has a double tube shape and comprises an inner tube and an outer tube, and a plasma source gas inlet port to supply plasma source gas into a space between the inner tube and the outer tube is disposed in the outer tube. A control electrode to control plasma potential is disposed in the dielectric tube. This plasma processing apparatus provides a uniform plasma density distribution along a radial direction of a wafer, and easy control of the plasma potential in the process chamber.
摘要翻译：提供螺旋谐振器等离子体处理装置。等离子体处理装置包括具有用于支撑基板的基板保持器的处理室，设置在处理室上以与处理室连通的介电管，缠绕在介质管周围的螺旋线圈，以及RF电源，以提供RF功率到螺旋线圈。电介质管具有双管形状并且包括内管和外管，并且在外管中设置有用于将等离子体源气体供应到内管和外管之间的空间中的等离子体源气体入口。用于控制等离子体电位的控制电极设置在电介质管中。这种等离子体处理装置沿着晶片的径向方向提供均匀的等离子体密度分布，并且容易控制处理室中的等离子体电位。

4. 发明授权

US07404879B2 Ionized physical vapor deposition apparatus using helical self-resonant coil 有权
标题翻译：电离物理气相沉积装置采用螺旋自谐振线圈
公开(公告)号：US07404879B2
公开(公告)日：2008-07-29
申请号：US10932076
申请日：2004-09-02
申请人： Yuri Nikolaevich Tolmachev , Dong-joon Ma , Sergiy Yakovlevich Navala , Dae-il Kim
发明人： Yuri Nikolaevich Tolmachev , Dong-joon Ma , Sergiy Yakovlevich Navala , Dae-il Kim
IPC分类号： C23C14/04 , C23C14/34 , C23C14/36 , C23C14/42
CPC分类号： H01J37/321 , C23C14/358 , H01J37/3408
摘要： Provided is an ionized physical vapor deposition (IPVD) apparatus having a helical self-resonant coil. The IPVD apparatus comprises a process chamber having a substrate holder that supports a substrate to be processed, a deposition material source that supplies a material to be deposited on the substrate into the process chamber, facing the substrate holder, a gas injection unit to inject a process gas into the process chamber, a bias power source that applies a bias potential to the substrate holder, a helical self-resonant coil that produces plasma for ionization of the deposition material in the process chamber, one end of the helical self-resonant coil being grounded and the other end being electrically open, and an RF generator to supply an RF power to the helical self-resonant coil. The use of a helical self-resonant coil enables the IPVD apparatus to ignite and operate at very low chamber pressure such as approximately 0.1 mtorr, and to produce high density plasma with high efficiency compared to a conventional IPVD apparatus. Accordingly, a high efficiency of ionization of deposition material is achieved.
摘要翻译：提供了一种具有螺旋自谐振线圈的电离物理气相沉积（IPVD）装置。 IPVD装置包括具有支撑待处理基板的基板保持器的处理室，将要沉积在基板上的材料供给到面向基板保持器的处理室中的沉积材料源，注入单元将处理气体进入处理室，向衬底保持器施加偏置电位的偏压电源，产生用于离子化处理室中的沉积材料的等离子体的螺旋自谐振线圈，螺旋自谐振线圈的一端接地并且另一端电气打开，以及RF发生器，用于向螺旋自谐振线圈提供RF功率。螺旋自谐振线圈的使用使得IPVD装置能够在非常低的室压力（例如约0.1mtorr）下点燃和操作，并且与传统的IPVD装置相比，可以高效率地产生高密度等离子体。因此，实现了沉积材料的高效离子化。

5. 发明授权

US07210424B2 High-density plasma processing apparatus 失效
标题翻译：高密度等离子体处理装置
公开(公告)号：US07210424B2
公开(公告)日：2007-05-01
申请号：US10843430
申请日：2004-05-12
申请人： Yuri Nikolaevich Tolmachev , Sergiy Yakovlevich Navala , Dong-joon Ma , Dae-il Kim
发明人： Yuri Nikolaevich Tolmachev , Sergiy Yakovlevich Navala , Dong-joon Ma , Dae-il Kim
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32211 , H01J37/321
摘要： A high-density plasma processing apparatus includes a processing chamber, having a susceptor for supporting an object to be processed positioned therein and a dielectric window positioned on the processing chamber to form an upper surface of the processing chamber. A reaction gas injection device injects a reaction gas into an interior of the processing chamber. An inductively coupled plasma (ICP) antenna, which is installed on a center of the dielectric window, transfers radio frequency (RF) power from an RF power supply to the interior of the processing chamber. A waveguide guides a microwave generated by a microwave generator. A circular radiative tube, which is installed on the dielectric window around the ICP antenna and is connected to the waveguide, radiates a microwave toward the interior of the processing chamber via a plurality of slots formed through a bottom wall of the radiative tube.
摘要翻译：高密度等离子体处理设备包括处理室，其具有用于支撑待处理物体的基座，以及位于处理室上的介电窗口，以形成处理室的上表面。反应气体注入装置将反应气体注入到处理室的内部。安装在电介质窗口的中心的电感耦合等离子体（ICP）天线将射频（RF）功率从RF电源传送到处理室的内部。波导引导微波发生器产生的微波。安装在ICP天线周围的电介质窗口并连接到波导的圆形辐射管通过经由辐射管的底壁形成的多个狭槽向处理室的内部辐射微波。

6. 发明授权

US4996460A DC type plasma display panel 失效
标题翻译：直流型等离子体显示面板
公开(公告)号：US4996460A
公开(公告)日：1991-02-26
申请号：US398439
申请日：1989-08-25
申请人： Dae-il Kim , Woo-hyun Hwang
发明人： Dae-il Kim , Woo-hyun Hwang
IPC分类号： G09F9/313 , H01J17/49
CPC分类号： H01J17/492 , G09F9/313
摘要： An improved plasma display panel is disclosed, the improvement comprising: a resistance layer stacked on the surface of a trigger electrode in such a manner that the surface of the resistance layer should be exposed to a discharge space filled with discharge gas, characterized in that the trigger electrode is unitized into a single piece so that the whole surface of the resistance layer should be matched with the whole surface of the trigger electrode. The device of the present invention is easy to manufacture because the dielectric which is complicated and has fastidious conditions is removed, and low cost metals as the material of the electrodes can be adopted, thus making it also possible to save the manufacturing cost.
摘要翻译：公开了一种改进的等离子体显示面板，其改进包括：以触电电极的表面堆叠的电阻层，使得电阻层的表面应暴露于填充有放电气体的放电空间，其特征在于，触发电极单元化，使电阻层的整个表面与触发电极的整个表面相匹配。本发明的器件易于制造，因为去除了复杂且具有苛刻条件的电介质，并且可以采用作为电极材料的低成本金属，从而也可以节省制造成本。

7. 发明授权

US5747939A Plasma display panel with control resistance values for restricting current flow into the cathodes 失效
标题翻译：具有控制电阻值的等离子显示面板，用于限制电流流入阴极
公开(公告)号：US5747939A
公开(公告)日：1998-05-05
申请号：US767350
申请日：1996-12-18
申请人： Dae-il Kim , Nac-koo Kim , Kyung-min Kim , Dong-cheol Jeong
发明人： Dae-il Kim , Nac-koo Kim , Kyung-min Kim , Dong-cheol Jeong
IPC分类号： G09F9/313 , H01J17/06 , H01J17/36 , H01J17/49 , H01J17/34
CPC分类号： H01J17/36 , H01J17/492
摘要： A plasma display panel prevents mutual reaction between the cathode electrodes and resistance layers during the manufacturing process and reduces any decreasing of resistance values. Also, equal brightness on the entire surface of the screen and a high-resolution image is attained. And finally, the manufacturing process is made simple and there is optimization of the whole structure. Connect bars are inserted between the anodes and cathode electrodes in order to make equal, at every connecting discharge cell, the resistance values, and there is a reduction of contact resistance to such an extend that it can be discounted. Trigger electrodes and cathode bus lines, which emit auxiliary discharges, are formed parallel to each other on an identical plane. Branch electrodes that extend out from the trigger electrodes are arranged so as to extend out into the discharge cells.
摘要翻译：等离子体显示面板防止在制造过程中阴极和电阻层之间的相互反应，并且减小电阻值的任何降低。此外，获得了屏幕整个表面上的相同亮度和高分辨率图像。最后，制造过程简单，整体结构优化。连接棒插入在阳极和阴极之间，以便在每个连接放电单元处使电阻值相等，并且在这样一个扩展的情况下，可以降低接触电阻以使其被打折。发出辅助放电的触发电极和阴极母线在同一平面上彼此平行地形成。从触发电极延伸出的分支电极布置成延伸到放电单元中。

8. 发明授权

US5384514A Plasma display device 失效
标题翻译：等离子显示装置
公开(公告)号：US5384514A
公开(公告)日：1995-01-24
申请号：US753045
申请日：1991-08-30
申请人： Dae-il Kim
发明人： Dae-il Kim
IPC分类号： G09F9/313 , H01J17/49
CPC分类号： H01J17/492 , G09F9/313
摘要： A direct current type plasma display device includes an auxiliary discharge cell which has barrier walls for preventing cross-talk. First and second barrier walls are provided on front and rear plates respectively. The first and second barrier walls are in contact with each other and skewed by a predetermined width. A third barrier wall is integrally formed with the first barrier wall in a perpendicular direction to the first barrier wall. Thus, practical application is easy, and the plasma display device can effectively improve cross-talk suppression as well as the degree of contrast. This device can be applied to both monochrome and color systems and is particularly useful in large scale image reproducing apparatus requiring a high degree of image quality.
摘要翻译：直流型等离子体显示装置包括具有用于防止串扰的阻挡壁的辅助放电单元。第一和第二阻挡壁分别设置在前板和后板上。第一和第二阻挡壁彼此接触并且倾斜预定的宽度。第一阻挡壁与第一阻挡壁在与第一阻挡壁垂直的方向上一体形成。因此，实际应用容易，等离子体显示装置可以有效地改善串扰抑制以及对比度。该装置可以应用于单色和彩色系统，并且在需要高度图像质量的大规模图像再现装置中特别有用。

9. 发明授权

US06266033B1 Plasma display device 有权
标题翻译：等离子显示装置
公开(公告)号：US06266033B1
公开(公告)日：2001-07-24
申请号：US09260057
申请日：1999-03-02
申请人： Dae-il Kim
发明人： Dae-il Kim
IPC分类号： G09G328
CPC分类号： H01J11/24 , G09G3/2986 , G09G2320/0209 , H01J11/12 , H01J11/28
摘要： A plasma display device includes a plurality of discharge cells each having substrates, and at least two electrodes formed on the substrates, for generating a discharge therebetween, and a shielding electrode formed between the electrodes respectively positioned in the neighboring cells, for shielding crosstalk generated between the electrodes of the neighboring cells.
摘要翻译：等离子体显示装置包括多个放电单元，每个放电单元均具有衬底，并且至少两个电极形成在衬底上，用于在其间产生放电，以及形成在分别位于相邻单元中的电极之间的屏蔽电极，用于屏蔽在相邻单元之间产生的串扰相邻电池的电极。

10. 发明授权

US5369338A Structure of a plasma display panel and a driving method thereof 失效
标题翻译：等离子体显示面板的结构及其驱动方法
公开(公告)号：US5369338A
公开(公告)日：1994-11-29
申请号：US970036
申请日：1992-11-02
申请人： Dae-il Kim
发明人： Dae-il Kim
IPC分类号： G09G3/282 , G09G3/20 , G09G3/2813 , G09G3/291 , G09G3/292 , G09G3/293 , G09G3/294 , H01J11/12 , H01J11/14 , H01J11/20 , H01J11/24 , H01J11/26 , H01J11/28 , H01J11/32 , H01J11/36 , H01J11/38 , H01J11/42 , H01J11/44 , G09G3/10
CPC分类号： H01J11/30 , G09G3/2986 , H01J11/12 , G09G3/291
摘要： A plasma display panel (PDP) is disclosed which includes a plurality of anodes formed on an upper plate, a plurality of first sustaining electrodes and a plurality of alternating second sustaining electrodes and cathodes formed on a lower plate, and a dielectric coated on the first and second sustaining electrodes and cathodes. A method for driving the PDP includes the steps of initiating a discharge by supplying a potential higher than the discharge firing voltage to the anodes and cathodes, generating a predetermined potential between the cathodes and first sustaining electrodes to increase the voltage generated from the discharge-initiating step, supplying a voltage higher than a discharge sustaining voltage between the first and second sustaining electrodes to maintain the discharge, and supplying a narrow pulse to the cathodes for erasing the discharge.
摘要翻译：公开了一种等离子体显示面板（PDP），其包括形成在上板上的多个阳极，形成在下板上的多个第一维持电极和多个交替的第二维持电极和阴极，以及涂覆在第一和第二维持电极和阴极。用于驱动PDP的方法包括以下步骤：通过向阳极和阴极提供高于放电点火电压的电位来开始放电，在阴极和第一维持电极之间产生预定电位以增加从放电引发产生的电压在第一和第二维持电极之间提供高于放电维持电压的电压以保持放电，并且向阴极提供窄脉冲以消除放电。

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