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    • 7. 发明申请
    • Ultra-low power limiter
    • 超低功率限幅器
    • US20060198197A1
    • 2006-09-07
    • US11360615
    • 2006-02-24
    • Ja-nam KuChung-woul KimYoung-hoon MinIl-jong SongDong-hyun Lee
    • Ja-nam KuChung-woul KimYoung-hoon MinIl-jong SongDong-hyun Lee
    • G11C11/34G11C16/06
    • H03K19/00315H03K17/08128
    • An over-voltage protection circuit (i.e., a limiter), includes: a first switching block having a plurality of semiconductor elements, serially connected to each other and turned on in sequence according to the magnitude of an input voltage; and a plurality of second switching blocks, in which each of the second switching blocks includes a pair of serially connected semiconductor elements having different current properties. The second switching blocks are connected in parallel to the first switching block. By minimizing a leakage current when an input voltage is below a reference voltage and by maximizing a leakage current when the input voltage is above the reference voltage, the limiter prevents excessive current from flowing into the RF tag circuit when the input voltage is below the reference voltage, and ensures that a sufficient amount of current is supplied to a regulator when the input voltage is below the reference voltage.
    • 过电压保护电路(即限幅器)包括:具有多个半导体元件的第一开关块,它们彼此串联连接并根据输入电压的大小依次导通; 以及多个第二切换块,其中每个第二切换块包括具有不同电流特性的一对串联连接的半导体元件。 第二切换块与第一切换块并联连接。 当输入电压低于参考电压时,通过使漏电流最小化,并且当输入电压高于参考电压时使漏电流最大化,当输入电压低于参考电压时,限幅器可防止过大的电流流入RF标签电路 电压,并且确保当输入电压低于参考电压时,足够量的电流被提供给调节器。
    • 9. 发明授权
    • Ultra-low power limiter
    • 超低功率限幅器
    • US07688561B2
    • 2010-03-30
    • US11360615
    • 2006-02-24
    • Ja-nam KuChung-woul KimYoung-hoon MinIl-jong SongDong-hyun Lee
    • Ja-nam KuChung-woul KimYoung-hoon MinIl-jong SongDong-hyun Lee
    • H02H3/20H02H9/04
    • H03K19/00315H03K17/08128
    • An over-voltage protection circuit (i.e., a limiter), includes: a first switching block having a plurality of semiconductor elements, serially connected to each other and turned on in sequence according to the magnitude of an input voltage; and a plurality of second switching blocks, in which each of the second switching blocks includes a pair of serially connected semiconductor elements having different current properties. The second switching blocks are connected in parallel to the first switching block. By minimizing a leakage current when an input voltage is below a reference voltage and by maximizing a leakage current when the input voltage is above the reference voltage, the limiter prevents excessive current from flowing into the RF tag circuit when the input voltage is below the reference voltage, and ensures that a sufficient amount of current is supplied to a regulator when the input voltage is below the reference voltage.
    • 过压保护电路(即限幅器)包括:具有多个半导体元件的第一开关块,它们相互串联并根据输入电压的大小依次导通; 以及多个第二切换块,其中每个第二切换块包括具有不同电流特性的一对串联连接的半导体元件。 第二切换块与第一切换块并联连接。 当输入电压低于参考电压时,通过使漏电流最小化,并且当输入电压高于参考电压时使泄漏电流达到最大值,当输入电压低于参考电压时,限幅器可防止过大的电流流入RF标签电路 电压,并且确保当输入电压低于参考电压时,足够量的电流被提供给调节器。
    • 10. 发明授权
    • Structure for realizing integrated circuit having Schottky diode and method of fabricating the same
    • 用于实现具有肖特基二极管的集成电路的结构及其制造方法
    • US07625804B2
    • 2009-12-01
    • US11963354
    • 2007-12-21
    • Ja-nam KuSeong-hearn LeeIl-jong SongYoung-hoon MinSang-wook Kwon
    • Ja-nam KuSeong-hearn LeeIl-jong SongYoung-hoon MinSang-wook Kwon
    • H01L21/20
    • H01L29/872H01L27/0788
    • An integrated circuit structure in which a plurality of Schottky diodes and a capacitor are integrally formed. The integrated circuit structure includes a substrate including an N-type semiconductor doped with N-type impurities and a P-type semiconductor doped with P-type impurities; a first conductive layer laminated on the substrate so that the first conductive layer is electrically connected to the N-type semiconductor and the P-type semiconductor; a dielectric layer laminated on an upper surface of the first conductive layer; and a second conductive layer laminated on an upper surface of the dielectric layer so that the second conductive layer forms a capacitor together with the first conductive layer and the dielectric layer. Accordingly, when the integrated circuit structure is used in a rectification circuit, the size of an entire circuit can be reduced.
    • 一体形成多个肖特基二极管和电容器的集成电路结构。 集成电路结构包括:衬底,其包括掺杂有N型杂质的N型半导体和掺杂有P型杂质的P型半导体; 层叠在所述基板上的第一导电层,使得所述第一导电层与所述N型半导体和所述P型半导体电连接; 层压在所述第一导电层的上表面上的电介质层; 以及层叠在电介质层的上表面上的第二导电层,使得第二导电层与第一导电层和电介质层一起形成电容器。 因此,当在整流电路中使用集成电路结构时,可以减小整个电路的尺寸。