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1. 发明申请

US20090087963A1 METHOD FOR REDUCING PILLAR STRUCTURE DIMENSIONS OF A SEMICONDUCTOR DEVICE 有权
标题翻译：减少半导体器件的支柱结构尺寸的方法
公开(公告)号：US20090087963A1
公开(公告)日：2009-04-02
申请号：US11864205
申请日：2007-09-28
申请人： Yung-Tin Chen , Michael Chan , Paul Poon , Steven J. Radigan
发明人： Yung-Tin Chen , Michael Chan , Paul Poon , Steven J. Radigan
IPC分类号： H01L21/20
CPC分类号： H01L21/0274 , G03F7/40
摘要： A method creates pillar structures on a semiconductor wafer and includes the steps of providing a layer of semiconductor. A layer of photoresist is applied over the layer of semiconductor. The layer of photoresist is exposed with an initial pattern of light to effect the layer of photoresist. The photoresist layer is then etched away to provide a photoresist pattern to create the pillar structures. The photoresist pattern is processed in the layer of photoresist after the step of exposing the layer of photoresist and prior to the step of etching to reduce the dimensions of the photoresist pattern in the layer of photoresist.
摘要翻译：一种方法在半导体晶片上形成柱结构，并且包括提供半导体层的步骤。一层光致抗蚀剂被施加在半导体层上。光致抗蚀剂层用初始图案曝光以实现光致抗蚀剂层。然后蚀刻掉光致抗蚀剂层以提供光致抗蚀剂图案以产生柱结构。在曝光光致抗蚀剂层的步骤之前和蚀刻步骤之前，在光致抗蚀剂层中处理光致抗蚀剂图案，以减小光致抗蚀剂层中的光刻胶图案的尺寸。

2. 发明授权

US07682942B2 Method for reducing pillar structure dimensions of a semiconductor device 有权
标题翻译：减少半导体器件的柱结构尺寸的方法
公开(公告)号：US07682942B2
公开(公告)日：2010-03-23
申请号：US11864205
申请日：2007-09-28
申请人： Yung-Tin Chen , Michael Chan , Paul Poon , Steven J. Radigan
发明人： Yung-Tin Chen , Michael Chan , Paul Poon , Steven J. Radigan
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/0274 , G03F7/40
摘要： A method creates pillar structures on a semiconductor wafer and includes the steps of providing a layer of semiconductor. A layer of photoresist is applied over the layer of semiconductor. The layer of photoresist is exposed with an initial pattern of light to effect the layer of photoresist. The photoresist layer is then etched away to provide a photoresist pattern to create the pillar structures. The photoresist pattern is processed in the layer of photoresist after the step of exposing the layer of photoresist and prior to the step of etching to reduce the dimensions of the photoresist pattern in the layer of photoresist.
摘要翻译：一种方法在半导体晶片上形成柱结构，并且包括提供半导体层的步骤。一层光致抗蚀剂被施加在半导体层上。光致抗蚀剂层用初始图案曝光以实现光致抗蚀剂层。然后蚀刻掉光致抗蚀剂层以提供光致抗蚀剂图案以产生柱结构。在曝光光致抗蚀剂层的步骤之前和蚀刻步骤之前，在光致抗蚀剂层中处理光致抗蚀剂图案，以减小光致抗蚀剂层中的光刻胶图案的尺寸。

3. 发明授权

US07968277B2 Imaging post structures using X and Y dipole optics and a single mask 有权
标题翻译：使用X和Y偶极光学元件和单个掩模的成像柱结构
公开(公告)号：US07968277B2
公开(公告)日：2011-06-28
申请号：US12796449
申请日：2010-06-08
申请人： Yung-Tin Chen , Steven J. Radigan , Paul Poon , Michael Konevecki
发明人： Yung-Tin Chen , Steven J. Radigan , Paul Poon , Michael Konevecki
IPC分类号： G03F7/26
CPC分类号： G03F7/70466 , G03F1/00 , G03F7/70425
摘要： A photolithographic method uses different exposure patterns. In one aspect, a photo-sensitive layer on a substrate is subject to a first exposure using optics having a first exposure pattern, such as an x-dipole pattern, followed by exposure using optics having a second exposure pattern, such as a y-dipole pattern, via the same mask, and with the photo-sensitive layer fixed relative to the mask. A 2-D post pattern with a pitch of approximately 70-150 nm may be formed in a layer beneath the photo-sensitive layer using 157-193 nm UV light, and hyper-numerical aperture optics, in one approach. In another aspect, hard baking is performed after both of the first and second exposures to erase a memory effect of photoresist after the first exposure. In another aspect, etching of a hard mask beneath the photo-sensitive layer is performed after both of the first and second exposures.
摘要翻译：光刻方法使用不同的曝光模式。在一个方面，使用具有第一曝光图案（例如x-偶极图案）的光学器件，然后使用具有第二曝光图案的光学元件例如y型曝光，使用基板上的感光层进行第一次曝光，偶极图案，通过相同的掩模，并且光敏层相对于掩模固定。在一种方法中，可以使用157-193nm UV光和超数值孔径光学器件在光敏层下方的层中形成具有约70-150nm间距的2-D柱状图案。另一方面，在第一曝光和第二次曝光之后进行硬烘烤，以擦除在第一次曝光之后光致抗蚀剂的记忆效应。在另一方面，在第一和第二次曝光之后进行光敏层下面的硬掩模的蚀刻。

4. 发明申请

US20100243602A1 IMAGING POST STRUCTURES USING X AND Y DIPOLE OPTICS AND A SINGLE MASK 有权
标题翻译：使用X和Y DIPOLE OPTICS和单个掩模成像后结构
公开(公告)号：US20100243602A1
公开(公告)日：2010-09-30
申请号：US12796449
申请日：2010-06-08
申请人： Yung-Tin Chen , Steven J. Radigan , Paul Poon , Michael W. Konevecki
发明人： Yung-Tin Chen , Steven J. Radigan , Paul Poon , Michael W. Konevecki
IPC分类号： C23F1/00
CPC分类号： G03F7/70466 , G03F1/00 , G03F7/70425
摘要： A photolithographic method uses different exposure patterns. In one aspect, a photo-sensitive layer on a substrate is subject to a first exposure using optics having a first exposure pattern, such as an x-dipole pattern, followed by exposure using optics having a second exposure pattern, such as a y-dipole pattern, via the same mask, and with the photo-sensitive layer fixed relative to the mask. A 2-D post pattern with a pitch of approximately 70-150 nm may be formed in a layer beneath the photo-sensitive layer using 157-193 nm UV light, and hyper-numerical aperture optics, in one approach. In another aspect, hard baking is performed after both of the first and second exposures to erase a memory effect of photoresist after the first exposure. In another aspect, etching of a hard mask beneath the photo-sensitive layer is performed after both of the first and second exposures.
摘要翻译：光刻方法使用不同的曝光模式。在一个方面，使用具有第一曝光图案（例如x-偶极图案）的光学器件，然后使用具有第二曝光图案的光学元件例如y型曝光，使用基板上的感光层进行第一次曝光，偶极图案，通过相同的掩模，并且光敏层相对于掩模固定。在一种方法中，可以使用157-193nm UV光和超数值孔径光学器件在光敏层下方的层中形成具有约70-150nm间距的2-D柱状图案。另一方面，在第一曝光和第二次曝光之后进行硬烘烤，以擦除在第一次曝光之后光致抗蚀剂的记忆效应。在另一方面，在第一和第二次曝光之后进行光敏层下面的硬掩模的蚀刻。

5. 发明申请

US20080160423A1 IMAGING POST STRUCTURES USING X AND Y DIPOLE OPTICS AND A SINGLE MASK 有权
标题翻译：使用X和Y DIPOLE OPTICS和单个掩模成像后结构
公开(公告)号：US20080160423A1
公开(公告)日：2008-07-03
申请号：US11618776
申请日：2006-12-30
申请人： Yung-Tin Chen , Steven J. Radigan , Paul Poon , Michael W. Konevecki
发明人： Yung-Tin Chen , Steven J. Radigan , Paul Poon , Michael W. Konevecki
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F7/70466 , G03F1/00 , G03F7/70425
摘要： A photolithographic method uses different exposure patterns. In one aspect, a photo-sensitive layer on a substrate is subject to a first exposure using optics having a first exposure pattern, such as an x-dipole pattern, followed by exposure using optics having a second exposure pattern, such as a y-dipole pattern, via the same mask, and with the photo-sensitive layer fixed relative to the mask. A 2-D post pattern with a pitch of approximately 70-150 nm may be formed in a layer beneath the photo-sensitive layer using 157-193 nm UV light, and hyper-numerical aperture optics, in one approach. In another aspect, hard baking is performed after both of the first and second exposures to erase a memory effect of photoresist after the first exposure. In another aspect, etching of a hard mask beneath the photo-sensitive layer is performed after both of the first and second exposures.
摘要翻译：光刻方法使用不同的曝光模式。在一个方面，使用具有第一曝光图案（例如x-偶极图案）的光学器件，然后使用具有第二曝光图案的光学元件例如y型曝光，使用基板上的感光层进行第一次曝光，偶极图案，通过相同的掩模，并且光敏层相对于掩模固定。在一种方法中，可以使用157-193nm UV光和超数值孔径光学器件在光敏层下方的层中形成具有约70-150nm间距的2-D柱状图案。另一方面，在第一曝光和第二次曝光之后进行硬烘烤，以擦除在第一次曝光之后光致抗蚀剂的记忆效应。在另一方面，在第一和第二次曝光之后进行光敏层下面的硬掩模的蚀刻。

6. 发明授权

US07794921B2 Imaging post structures using x and y dipole optics and a single mask 有权
标题翻译：使用x和y偶极子光学元件和单个掩模的成像柱结构
公开(公告)号：US07794921B2
公开(公告)日：2010-09-14
申请号：US11618776
申请日：2006-12-30
申请人： Yung-Tin Chen , Steven J. Radigan , Paul Poon , Michael W. Konevecki
发明人： Yung-Tin Chen , Steven J. Radigan , Paul Poon , Michael W. Konevecki
IPC分类号： G03F7/20
CPC分类号： G03F7/70466 , G03F1/00 , G03F7/70425
摘要： A photolithographic method uses different exposure patterns. In one aspect, a photo-sensitive layer on a substrate is subject to a first exposure using optics having a first exposure pattern, such as an x-dipole pattern, followed by exposure using optics having a second exposure pattern, such as a y-dipole pattern, via the same mask, and with the photo-sensitive layer fixed relative to the mask. A 2-D post pattern with a pitch of approximately 70-150 nm may be formed in a layer beneath the photo-sensitive layer using 157-193 nm UV light, and hyper-numerical aperture optics, in one approach. In another aspect, hard baking is performed after both of the first and second exposures to erase a memory effect of photoresist after the first exposure. In another aspect, etching of a hard mask beneath the photo-sensitive layer is performed after both of the first and second exposures.
摘要翻译：光刻方法使用不同的曝光模式。在一个方面，使用具有第一曝光图案（例如x-偶极图案）的光学器件，然后使用具有第二曝光图案的光学元件例如y型曝光，使用基板上的感光层进行第一次曝光，偶极图案，通过相同的掩模，并且光敏层相对于掩模固定。在一种方法中，可以使用157-193nm UV光和超数值孔径光学器件在光敏层下方的层中形成具有约70-150nm间距的2-D柱状图案。另一方面，在第一曝光和第二次曝光之后进行硬烘烤，以擦除在第一次曝光之后光致抗蚀剂的记忆效应。在另一方面，在第一和第二次曝光之后进行光敏层下面的硬掩模的蚀刻。

7. 发明申请

US20120276744A1 Patterning Method for High Density Pillar Structures 有权
标题翻译：高密度柱结构图案化方法
公开(公告)号：US20120276744A1
公开(公告)日：2012-11-01
申请号：US13463260
申请日：2012-05-03
申请人： Natalie Nguyen , Paul Wai Kie Poon , Steven J. Radigan , Michael Konevecki , Yung-Tin Chen , Raghuveer Makala , Vance Dunton
发明人： Natalie Nguyen , Paul Wai Kie Poon , Steven J. Radigan , Michael Konevecki , Yung-Tin Chen , Raghuveer Makala , Vance Dunton
IPC分类号： H01L21/302
CPC分类号： H01L21/0274 , H01L21/0337 , H01L27/1021 , Y10S438/947 , Y10S438/948 , Y10S438/949
摘要： A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features.
摘要翻译：制造器件的方法包括在牺牲层上形成第一光致抗蚀剂层，图案化第一光致抗蚀剂层以形成第一光致抗蚀剂特征，使得第一光致抗蚀剂特征不溶于溶剂，在第一光致抗蚀剂特征上形成第二光致抗蚀剂层，第二光致抗蚀剂层以形成第二光致抗蚀剂特征，在第一和第二光致抗蚀剂特征上形成间隔层，蚀刻间隔层以形成间隔物特征并暴露第一和第二光致抗蚀剂特征，在间隔物特征之间形成第三光致抗蚀剂特征，去除间隔物特征，并且使用第一，第二和第三光致抗蚀剂特征作为掩模来图案化牺牲层以形成牺牲特征。

8. 发明授权

US08241969B2 Patterning method for high density pillar structures 有权
公开(公告)号：US08241969B2
公开(公告)日：2012-08-14
申请号：US13216688
申请日：2011-08-24
申请人： Natalie Nguyen , Paul Wai Kie Poon , Steven J. Radigan , Michael Konevecki , Yung-Tin Chen , Raghuveer Makala , Vance Dunton
发明人： Natalie Nguyen , Paul Wai Kie Poon , Steven J. Radigan , Michael Konevecki , Yung-Tin Chen , Raghuveer Makala , Vance Dunton
IPC分类号： H01L21/82
CPC分类号： H01L21/0274 , H01L21/0337 , H01L27/1021 , Y10S438/947 , Y10S438/948 , Y10S438/949
摘要： A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features.

9. 发明申请

US20120094478A1 RESIST FEATURE AND REMOVABLE SPACER PITCH DOUBLING PATTERNING METHOD FOR PILLAR STRUCTURES 有权
标题翻译：用于支柱结构的阻力特征和可拆卸间隔器双重方式
公开(公告)号：US20120094478A1
公开(公告)日：2012-04-19
申请号：US13331267
申请日：2011-12-20
申请人： Yung-Tin Chen , Steven J. Radigan
发明人： Yung-Tin Chen , Steven J. Radigan
IPC分类号： H01L21/28 , H01L21/311
CPC分类号： H01L45/1691 , H01L21/0337 , H01L21/0338 , H01L27/1021
摘要： A method of making a semiconductor device includes forming a layer over a substrate, forming a plurality of spaced apart features of imagable material over the layer, forming sidewall spacers on the plurality of features and filling a space between a first sidewall spacer on a first feature and a second sidewall spacer on a second feature with a filler feature. The method also includes removing the sidewall spacers to leave the first feature, the filler feature and the second feature spaced apart from each other, and etching the layer using the first feature, the filler feature and the second feature as a mask.
摘要翻译：制造半导体器件的方法包括在衬底上形成层，在该层上形成可成像材料的多个间隔特征，在多个特征上形成侧壁间隔物，并填充第一特征上的第一侧壁间隔物之间的空间以及具有填充特征的第二特征上的第二侧壁间隔物。该方法还包括去除侧壁间隔物以留下第一特征，填料特征和第二特征彼此间隔开，并且使用第一特征，填充物特征和第二特征作为掩模来蚀刻层。

10. 发明授权

US08084347B2 Resist feature and removable spacer pitch doubling patterning method for pillar structures 有权
标题翻译：支柱结构的抗蚀特征和可移除的间隔物间距倍增图案化方法
公开(公告)号：US08084347B2
公开(公告)日：2011-12-27
申请号：US12318609
申请日：2008-12-31
申请人： Yung-Tin Chen , Steven J. Radigan
发明人： Yung-Tin Chen , Steven J. Radigan
IPC分类号： H01L21/44
CPC分类号： H01L45/1691 , H01L21/0337 , H01L21/0338 , H01L27/1021
摘要： A method of making a semiconductor device includes forming at least one layer over a substrate, forming at least two spaced apart features of imagable material over the at least one layer, forming sidewall spacers on the at least two features and filling a space between a first sidewall spacer on a first feature and a second sidewall spacer on a second feature with a filler feature. The method also includes selectively removing the sidewall spacers to leave the first feature, the filler feature and the second feature spaced apart from each other, and etching the at least one layer using the first feature, the filler feature and the second feature as a mask.
摘要翻译：制造半导体器件的方法包括在衬底上形成至少一个层，在所述至少一个层上形成可成像材料的至少两个间隔的特征，在所述至少两个特征上形成侧壁间隔物，并填充第一第一特征上的侧壁间隔物和具有填充物特征的第二特征上的第二侧壁间隔物。该方法还包括选择性地去除侧壁间隔物以留下第一特征，填料特征和第二特征彼此间隔开，并且使用第一特征，填充物特征和第二特征作为掩模蚀刻至少一个层。

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