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    • 3. 发明授权
    • Dielectric ceramic composition for high frequencies and method for
preparation of the same
    • 高频介电陶瓷组合物及其制备方法
    • US5561090A
    • 1996-10-01
    • US501523
    • 1995-07-12
    • Yung ParkYoon H. Kim
    • Yung ParkYoon H. Kim
    • C04B35/106C04B35/49
    • C04B35/49
    • An improved dielectric ceramic composition for high frequencies and a method for preparation of the same, capable of being advantageously used for a dielectric resonator, a material of a substrate for an integrated circuit and the like in high frequency regions, which consists of a main component of ZrO.sub.2, TiO.sub.2, and SnO.sub.2 and a sintering aid component of ZnO, NiO, Nb.sub.2 O.sub.5, and Mn(NO.sub.3).sub.2 4H.sub.2. The main component consists of 38 to 58 wt % of ZrO.sub.2, 22 to 43 wt % of TiO.sub.2, and 9 to 26 wt % of SnO.sub.2. And the sintering aid component consists of, with respect to the total amount of the main component, less than 7 wt % of ZnO, less than 10 wt % of NiO, less than 7 wt % of Nb.sub.2 O.sub.5, and less than 4 wt %, of Mn(NO.sub.3).sub.2 4H.sub.2 O, calculated on the basis of the weight ratio of MnO.sub.2.
    • 一种用于高频率的改进的电介质陶瓷组合物及其制备方法,其能够有利地用于介电谐振器,用于高频区域的集成电路用基板的材料等,其主要成分 的ZrO2,TiO2和SnO2以及ZnO,NiO,Nb2O5和Mn(NO3)24H2的烧结助剂组分。 主要成分由38〜58重量%的ZrO 2,22〜43重量%的TiO 2和9〜26重量%的SnO 2构成。 烧结助剂组分相对于主要组分的总量为小于7重量%的ZnO,小于10重量%的NiO,小于7重量%的Nb 2 O 5和小于4重量% 的Mn(NO 3)2·4H 2 O,基于MnO 2的重量比计算。
    • 7. 发明申请
    • Liquid crystal display device and method of fabricating the same
    • 液晶显示装置及其制造方法
    • US20070103608A1
    • 2007-05-10
    • US11449378
    • 2006-06-08
    • Sook-Woo LeeYung Park
    • Sook-Woo LeeYung Park
    • G02F1/1343
    • H01L21/823814G02F1/13454G02F1/136213G02F1/136227G02F1/1368G02F2001/136218G02F2001/13629G02F2202/104
    • A liquid crystal display device includes a p-type driving thin film transistor and an n-type driving thin film transistor in a non-display region of a substrate. The p-type driving thin film transistor includes a first polycrystalline semiconductor pattern, a first gate electrode, a first source electrode and a first drain electrode. The n-type driving thin film transistor includes a second polycrystalline semiconductor pattern, a second gate electrode, a second source electrode and a second drain electrode. The liquid crystal display device further includes a gate line and a data line in a display region of the substrate and that cross each other to define a pixel region, and a pixel thin film transistor connected to the gate line and the data line. The pixel thin film transistor also includes a third polycrystalline semiconductor pattern, a third gate electrode, a third source electrode and a third drain electrode. The liquid crystal display device further comprises a pixel electrode that covers and directly contacts the third drain electrode, a shield pattern that covers and directly contacts each of the first source electrode and the first drain electrode and the second source electrode and the second drain electrode, and a shield line that covers and directly contacts the data lines and the third source electrode.
    • 液晶显示装置包括在基板的非显示区域中的p型驱动薄膜晶体管和n型驱动薄膜晶体管。 p型驱动薄膜晶体管包括第一多晶半导体图案,第一栅极电极,第一源极电极和第一漏极电极。 n型驱动薄膜晶体管包括第二多晶半导体图案,第二栅极电极,第二源极电极和第二漏极电极。 液晶显示装置还包括在基板的显示区域中的栅极线和数据线,并且彼此交叉以限定像素区域,以及连接到栅极线和数据线的像素薄膜晶体管。 像素薄膜晶体管还包括第三多晶半导体图案,第三栅极电极,第三源极电极和第三漏极电极。 液晶显示装置还包括覆盖并直接接触第三漏极的像素电极,覆盖并直接接触第一源极和第一漏电极以及第二源电极和第二漏电极中的每一个的屏蔽图案, 以及覆盖并直接接触数据线和第三源电极的屏蔽线。
    • 10. 发明授权
    • Microwave dielectric composition and method for preparing the same
    • 微波介电组合物及其制备方法
    • US6028021A
    • 2000-02-22
    • US107252
    • 1998-06-30
    • Ho Gi KimYung ParkTae Suk Chung
    • Ho Gi KimYung ParkTae Suk Chung
    • C04B35/486C04B35/48
    • C04B35/486
    • A microwave dielectric composition superior in all dielectric constant, product of resonant frequency by quality coefficient and temperature-dependent coefficient of resonant frequency, can be prepared by mixing a main oxide formulation consisting of lead oxide, calcium oxide, zirconium oxide and tin oxide with manganous nitrate (Mn(NO.sub.3).sub.2.4H.sub.2 O), calcining the mixture at a temperature of about 1,000 to 1,200.degree. C., pulverizing and molding the mixture, and sintering the molded body at a temperature of about 1,200 to 1,550.degree. C. in an oxygen atmosphere. It is 100 or greater in dielectric constant, 4,000 or greater in the product of resonant frequency by quality coefficient and .+-.3 mmp/.degree. C. or less in temperature-dependent coefficient of resonant frequency.
    • 通过将由氧化铅,氧化钙,氧化锆和氧化锡组成的主要氧化物配制物与二氧化锰混合,可以制备所有介电常数,谐振频率乘以质量系数和温度依赖共振频率系数的微波介电组合物 硝酸盐(Mn(NO 3)2·4H 2 O)),在约1000-1200℃的温度下煅烧混合物,粉碎和模塑该混合物,并在约1200至1550℃的温度下在氧气中烧结成型体 大气层。 谐振频率乘以质量系数乘积为4000以上,谐振频率的温度依赖系数为+/- 3mmp /℃以下的介电常数为100以上。